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61. 发明授权

US07349019B2 Solid-state imaging device, camera, power supply device and method thereof 有权
标题翻译：固态成像装置，相机，电源装置及其方法
公开(公告)号：US07349019B2
公开(公告)日：2008-03-25
申请号：US10901120
申请日：2004-07-29
申请人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
发明人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
IPC分类号： H04N3/14
CPC分类号： H04N5/357 , H04N5/374
摘要： With the use of the MOS-type solid-state imaging device, it is possible, by extending the period during which the VDD voltage rises from Low level to High level, that the gate voltage of the resetting unit does not fluctuate to have a positive electric potential due to the coupling capacitance between the VDD power and the gate of the resetting unit, unlike the conventional case. Consequently, the electrons necessary for rendering the accumulation unit non-selectable do not flow from the accumulation unit to the VDD power. This prevents the level of the electric potential in the accumulation unit of non-selectable row from becoming positive. Also, the detecting unit is not switched on, which prevents the error of selecting a non-selectable row.
摘要翻译：通过使用MOS型固态成像装置，通过将VDD电压从低电平上升到高电平的期间，能够使复位部的栅极电压不发生波动，与传统情况不同，由于VDD功率与复位单元的栅极之间的耦合电容引起的电位。因此，使不可选择的累积单元所需的电子不会从累积单元流向VDD电力。这防止了非可选行的累积单元中的电位的电平变为正。此外，检测单元不被接通，这防止了选择不可选行的错误。

62. 发明申请

US20080061216A1 Solid-State Imaging Device 有权
标题翻译：固态成像装置
公开(公告)号：US20080061216A1
公开(公告)日：2008-03-13
申请号：US11571461
申请日：2005-07-04
申请人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata
发明人： Shigetaka Kasuga , Takumi Yamaguchi , Takahiko Murata
IPC分类号： H01L27/00
CPC分类号： H04N5/3598 , H01L27/14609 , H04N5/243 , H04N5/3575
摘要： In the case where a subject is captured with a high-luminance light, such as sunlight, for a background, a phenomenon that a portion of the high-luminance subject is detected as a no-signal level is prevented.The solid-state imaging device includes: a photoelectric transducer PD which converts incident light to charges; a voltage level detection circuit 50 in which pixel units 10an1 and 10bn1, each having a voltage conversion amplifying transistor Q13a which outputs a voltage by converting the charges accumulated in the photoelectric transducer PD, are arranged one-dimensionally or two-dimensionally, and which detects a pixel output voltage outputted from each of the pixel units to the common column signal line Ln; and a column signal processing circuit 80 which receives a logic output voltage of the voltage level detection circuit 50 and the pixel output voltage and which outputs a voltage to a horizontal output circuit 90. The column signal processing circuit 80 outputs either a voltage identical to the pixel output voltage or a fixed voltage, depending on the logic output voltage.
摘要翻译：在用诸如阳光的高亮度光拍摄被摄体背景的情况下，防止将高亮度被摄体的一部分检测为无信号电平的现象。固态成像装置包括：将入射光转换成电荷的光电转换器PD; 电压电平检测电路50，其中通过转换积累在光电变换器PD中的电荷来输出电压的每个具有电压转换放大晶体管Q13a的像素单元10,1和10bn1被一维或两个并且其检测从每个像素单元输出到公共列信号线Ln的像素输出电压; 以及列信号处理电路80，其接收电压电平检测电路50的逻辑输出电压和像素输出电压，并向水平输出电路90输出电压。列信号处理电路80根据逻辑输出电压输出与像素输出电压或固定电压相同的电压。

63. 发明申请

US20080036889A1 Solid-state imaging device and driving method for a solid-state imaging device 有权
标题翻译：固态成像装置及其固体成像装置的驱动方法
公开(公告)号：US20080036889A1
公开(公告)日：2008-02-14
申请号：US11889202
申请日：2007-08-09
申请人： Takayoshi Yamada , Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
发明人： Takayoshi Yamada , Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
IPC分类号： H04N5/335 , H04N3/14
CPC分类号： H04N5/35572 , H04N5/374 , H04N5/37452
摘要： A solid-state imaging device that enables more images to be photographed and a reading time to be shortened by effectively using storage cells is provided. By combining pieces of information which correspond to signal charges output from a photoelectric converter and are sequentially stored in storage cells, it is possible to store more pieces of information than the number of storage cells. Also, by reading the combined information stored in one storage cell, it is possible to read more pieces of information by a single reading operation.
摘要翻译：提供一种能够通过有效地使用存储单元来拍摄更多图像并缩短读取时间的固态成像装置。通过组合对应于从光电转换器输出的信号电荷的信息并且顺序地存储在存储单元中，可以存储比存储单元数更多的信息。此外，通过读取存储在一个存储单元中的组合信息，可以通过单次读取操作读取更多的信息。

64. 发明授权

US07262404B2 Photodetector manufacturable by semiconductor processes 有权
标题翻译：光电探测器可通过半导体工艺制造
公开(公告)号：US07262404B2
公开(公告)日：2007-08-28
申请号：US10990679
申请日：2004-11-18
申请人： Takumi Yamaguchi , Shigetaka Kasuga , Takahiko Murata
发明人： Takumi Yamaguchi , Shigetaka Kasuga , Takahiko Murata
IPC分类号： H01L31/00 , H01L31/0232
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L31/02327
摘要： A photodetector includes a semiconductor substrate having photo-cells (1a, 1b, 1c). Each photo-cell is provided with a filter layer 20 that transmits light in a wavelength range predetermined for the photo-cell, and a photoelectric converter 17 that generates a signal charge according to an intensity of the light transmitted through the filter layer 20. Thickness (ta, tb, tc) of the filter layers 20 are corresponding to the wavelength ranges predetermined for respective photo-cells. By such a structure, it is possible to provide cost effective photodetectors that can be manufactured without managing materials for pigments and dyestuff for different colors when making color filters.
摘要翻译：光检测器包括具有光电池（1a，1b，1c）的半导体衬底。每个光电池设置有透射对于光电池预定的波长范围的光的滤光层20以及根据透过滤光层20的光的强度产生信号电荷的光电转换器17。滤光层20的厚度（ta，tb，tc）对应于各光电池的波长范围。通过这样的结构，可以提供成本有效的光电检测器，其可以在制造滤色器时不管理颜料和用于不同颜色的染料的材料来制造。

65. 发明申请

US20070122935A1 Manufacturing method of solid-state imaging device, solid-state imaging device, and camera 审中-公开
标题翻译：固态成像装置，固态成像装置和相机的制造方法
公开(公告)号：US20070122935A1
公开(公告)日：2007-05-31
申请号：US11602179
申请日：2006-11-21
申请人： Masahiro Kasano , Yuichi Inaba , Keisuke Tanaka , Takumi Yamaguchi
发明人： Masahiro Kasano , Yuichi Inaba , Keisuke Tanaka , Takumi Yamaguchi
IPC分类号： H01L21/00
CPC分类号： H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14685 , H01L27/14687
摘要： A manufacturing method of a solid-state imaging device prevents generation of a space due to insufficient filling of a conductive material. Materials constituting a multilayer film 41 are sequentially deposited on a semiconductor substrate, and portions respectively included in a plug formation intended region and a surrounding region that surrounds the plug formation intended region are removed from the deposited multilayer film 41. Next, the plug formation intended region and the surrounding region from which the portions have been removed is refilled with a single insulating material, and a hole is formed on the plug formation intended region by etching. Then, the formed hole is filled with a conductive material to therefore form a plug.
摘要翻译：固态成像装置的制造方法防止由于导电材料的填充不充分而产生空间。构成多层膜41的材料依次沉积在半导体衬底上，并且从沉积的多层膜41中去除分别包含在插塞形成预期区域中的部分和围绕插塞形成区域的周围区域。接下来，使用单个绝缘材料重新填充已经去除了部分的插塞形成预期区域和周围区域，并且通过蚀刻在插塞形成预期区域上形成孔。然后，形成的孔填充有导电材料，从而形成插头。

66. 发明申请

US20060268133A1 Noise reduction circuit 审中-公开
标题翻译：降噪电路
公开(公告)号：US20060268133A1
公开(公告)日：2006-11-30
申请号：US11378392
申请日：2006-03-20
申请人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga
发明人： Takahiko Murata , Takumi Yamaguchi , Shigetaka Kasuga
IPC分类号： H04N5/217
CPC分类号： H04N5/365 , H04N5/347
摘要： A noise reduction circuit includes a plurality of electric charge accumulating sections and a plurality of switching sections. In the noise reduction circuit, electric charge in an amount corresponding to a signal containing a noise is accumulated in each of the electric charge accumulating sections, and thereafter the switching sections are turned on to connect the electric charge accumulating sections in parallel or in series with each other, thereby outputting a signal corresponding to the average of, or the sum total of, the amounts of electric charge accumulated in the respective electric charge accumulating sections.
摘要翻译：噪声降低电路包括多个电荷累积部分和多个切换部分。在降噪电路中，在每个电荷累积部分中累积与包含噪声的信号相对应的量的电荷，此后开关部分被接通以将电荷累积部分并联或串联连接从而输出与累积在各个电荷累积部分中的电荷量的平均值或总和相对应的信号。

67. 发明申请

US20060152611A1 Image pickup device 审中-公开
标题翻译：图像拾取装置
公开(公告)号：US20060152611A1
公开(公告)日：2006-07-13
申请号：US10534892
申请日：2003-11-17
申请人： Koujirou Yoneda , Toshiya Fujii , Takahiro Iwasawa , Takumi Yamaguchi
发明人： Koujirou Yoneda , Toshiya Fujii , Takahiro Iwasawa , Takumi Yamaguchi
IPC分类号： H04N5/335
CPC分类号： H04N5/3741 , H04N5/359
摘要： An imaging element includes a photoelectric conversion element, a readout transistor, an accumulated element, a detection transistor, and a reset transistor. The readout transistor reads a signal charge when a gate potential to be supplied to the gate terminal is changed from a first state to a second state. The detection transistor detects a voltage signal after the gate potential to be supplied to the gate terminal of the readout transistor is changed from the second state to the first state. A reset potential supplied from the reset transistor to the accumulated element has an intermediate potential between the gate potential in the first state that is supplied to the gate terminal of the readout transistor and a predetermined VDD potential.
摘要翻译：成像元件包括光电转换元件，读出晶体管，累积元件，检测晶体管和复位晶体管。当提供给栅极端子的栅极电位从第一状态改变到第二状态时，读出晶体管读取信号电荷。在提供给读出晶体管的栅极端子的栅极电位从第二状态变为第一状态之后，检测晶体管检测电压信号。从复位晶体管向累积元件提供的复位电位在提供给读出晶体管的栅极端子的第一状态下的栅极电位与预定的VDD电位之间具有中间电位。

68. 发明申请

US20050024525A1 Solid-state imaging device, camera, power supply device and method thereof 有权
标题翻译：固态成像装置，相机，电源装置及其方法
公开(公告)号：US20050024525A1
公开(公告)日：2005-02-03
申请号：US10901120
申请日：2004-07-29
申请人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
发明人： Takumi Yamaguchi , Takahiko Murata , Shigetaka Kasuga
IPC分类号： H04N5/225 , H04N5/357 , H04N5/374 , H04N5/63
CPC分类号： H04N5/357 , H04N5/374
摘要： With the use of the MOS-type solid-state imaging device, it is possible, by extending the period during which the VDD voltage rises from Low level to High level, that the gate voltage of the resetting unit does not fluctuate to have a positive electric potential due to the coupling capacitance between the VDD power and the gate of the resetting unit, unlike the conventional case. Consequently, the electrons necessary for rendering the accumulation unit non-selectable do not flow from the accumulation unit to the VDD power. This prevents the level of the electric potential in the accumulation unit of non-selectable row from becoming positive. Also, the detecting unit is not switched on, which prevents the error of selecting a non-selectable row.
摘要翻译：通过使用MOS型固态成像装置，通过将VDD电压从低电平上升到高电平的期间，能够使复位部的栅极电压不发生波动，与传统情况不同，由于VDD功率与复位单元的栅极之间的耦合电容引起的电位。因此，使不可选择的累积单元所需的电子不会从累积单元流向VDD电力。这防止了非可选行的累积单元中的电位的电平变为正。此外，检测单元不被接通，这防止了选择不可选行的错误。

69. 发明授权

US06498103B2 Method for manufacturing solid-state imaging device 失效
公开(公告)号：US06498103B2
公开(公告)日：2002-12-24
申请号：US09903411
申请日：2001-07-11
申请人： Rieko Nishio , Takumi Yamaguchi , Toshihiro Kuriyama , Hiroyuki Senda
发明人： Rieko Nishio , Takumi Yamaguchi , Toshihiro Kuriyama , Hiroyuki Senda
IPC分类号： H01L21311
CPC分类号： H01L27/14692
摘要： A method for manufacturing a solid-state imaging device includes forming a transfer channel portion and a light-receiving portion in a silicon substrate; forming a silicon oxide film on the silicon substrate; forming a silicon nitride film on the silicon oxide film, the silicon nitride film acting as a gate insulating film together with the silicon oxide film above the transfer channel portion and acting as an anti-reflection film above the light-receiving portion; forming a protection film on the silicon nitride film; forming a polysilicon film above the silicon nitride film via the protection film at least above the light-receiving portion; and etching the polysilicon film so as to form a transfer electrode above the transfer channel portion. The etching of the polysilicon film is carried out so that the polysilicon film is removed above the light-receiving portion while the protection portion remains.

70. 发明授权

US08208054B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US08208054B2
公开(公告)日：2012-06-26
申请号：US12595229
申请日：2008-04-16
申请人： Takumi Yamaguchi , Sougo Ohta
发明人： Takumi Yamaguchi , Sougo Ohta
IPC分类号： H04N5/335
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14641 , H04N5/37457 , H04N9/045
摘要： A solid state imaging device includes shared amplification transistors and reset transistors arranged, for example, in a checkered pattern so that centroid of photo diodes 2 of the same colors are arranged substantially at an identical pitch. As a result, the resolution of the solid state imaging device can be maintained without considering irregularities of the incident light for each unit pixel.
摘要翻译：固态成像装置包括以例如方格图案布置的共享放大晶体管和复位晶体管，使得相同颜色的光电二极管2的质心基本上以相同的间距排列。结果，可以保持固态成像装置的分辨率，而不考虑每个单位像素的入射光的不规则性。

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