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    • 62. 发明授权
    • Toy ramp devices
    • 玩具斜坡装置
    • US07690964B2
    • 2010-04-06
    • US11744665
    • 2007-05-04
    • Michael NuttallHarold Garner
    • Michael NuttallHarold Garner
    • A63H18/00A63H29/08
    • A63H18/028A63H18/06
    • A toy ramp device for two or more moveable objects is disclosed. In some embodiments, the toy ramp device may include a base; a ramp configured to support at least a first of the two or more moveable objects and including a first ramp end portion and a second ramp end portion, the ramp being movably connected to the base and configured to move among a plurality of positions relative to the base; and a holder mechanism attached to the ramp and configured to support at least one of the two or more moveable objects adjacent to the ramp when the ramp is in the first position, and to allow the at least one of the two or more moveable objects to move onto the ramp and move along the ramp toward the second ramp end portion when the ramp is in the second position.
    • 公开了一种用于两个或多个可移动物体的玩具斜坡装置。 在一些实施例中,玩具斜坡装置可以包括底座; 斜坡,其被配置为支撑所述两个或更多个可移动物体中的至少一个,并且包括第一斜坡端部和第二斜坡端部,所述斜坡可移动地连接到所述基座并且构造成在相对于所述第二倾斜端部的多个位置之间移动 基础; 以及保持器机构,其附接到斜坡并且被配置为当斜坡处于第一位置时支撑与斜坡相邻的两个或更多个可移动物体中的至少一个,并且允许两个或更多个可移动物体中的至少一个 当斜坡处于第二位置时,移动到斜坡上并沿着斜坡移动到第二斜坡端部。
    • 67. 发明申请
    • TOY RAMP DEVICES
    • US20080009219A1
    • 2008-01-10
    • US11744665
    • 2007-05-04
    • Michael NuttallHarold Garner
    • Michael NuttallHarold Garner
    • A63H18/06
    • A63H18/028A63H18/06
    • A toy ramp device for two or more moveable objects is disclosed. In some embodiments, the toy ramp device may include a base; a ramp configured to support at least a first of the two or more moveable objects and including a first ramp end portion and a second ramp end portion, the ramp being movably connected to the base and configured to move among a plurality of positions relative to the base; and a holder mechanism attached to the ramp and configured to support at least one of the two or more moveable objects adjacent to the ramp when the ramp is in the first position, and to allow the at least one of the two or more moveable objects to move onto the ramp and move along the ramp toward the second ramp end portion when the ramp is in the second position.
    • 公开了一种用于两个或多个可移动物体的玩具斜坡装置。 在一些实施例中,玩具斜坡装置可以包括底座; 斜坡,其被配置为支撑所述两个或更多个可移动物体中的至少一个,并且包括第一斜坡端部和第二斜坡端部,所述斜坡可移动地连接到所述基座并且构造成在相对于所述第二倾斜端部的多个位置之间移动 基础; 以及保持器机构,其附接到斜坡并且被配置为当斜坡处于第一位置时支撑与斜坡相邻的两个或更多个可移动物体中的至少一个,并且允许两个或更多个可移动物体中的至少一个 当斜坡处于第二位置时,移动到斜坡上并沿着斜坡移动到第二斜坡端部。
    • 70. 发明授权
    • Method for enhancing vertical growth during the selective formation of silicon, and structures formed using same
    • 在硅的选择性形成期间增强垂直生长的方法以及使用其形成的结构
    • US06680229B2
    • 2004-01-20
    • US09770909
    • 2001-01-26
    • Michael NuttallGarry Anthony Mercaldi
    • Michael NuttallGarry Anthony Mercaldi
    • H01L218242
    • H01L21/02532H01L21/0262H01L21/02636H01L21/28525H01L29/66628
    • A method of selectively forming contact regions on a substrate having a plurality of exposed regions includes selectively forming a contact region on each of the exposed regions of the substrate. During formation, each contact region has a first growth rate in a first direction and a second growth rate in a second direction. While each contact region is being selectively formed on the respective exposed region, the contact region is heated to increase the first growth rate of the contact region in the first direction relative to the second growth rate of the contact region in the second direction. The first growth rate may be a vertical growth rate and the second growth rate may be a lateral growth rate. The contact may be heated by applying electromagnetic radiation to an upper surface of the substrate and not applying the radiation to the vertical portions of the contact region to thereby increase the vertical growth rate relative to the lateral growth rate. The electromagnetic radiation may be collimated light such as that generated by a scanning laser beam, and the substrate and formed contact regions may be silicon or other suitable materials. This method may be used during the fabrication of MOS transistors in memory devices and other integrated circuits.
    • 在具有多个暴露区域的衬底上选择性地形成接触区域的方法包括在衬底的每个暴露区域上选择性地形成接触区域。 在形成期间,每个接触区域在第一方向上具有第一生长速率,在第二方向上具有第二生长速率。 虽然每个接触区域被选择性地形成在相应的暴露区域上,但是接触区域被加热以增加接触区域在第一方向上相对于接触区域在第二方向上的第二增长速率的第一生长速率。 第一增长率可能是垂直增长率,第二增长率可能是横向增长率。 可以通过向基板的上表面施加电磁辐射来加热接触,并且不将辐射施加到接触区域的垂直部分,从而相对于横向生长速率增加垂直生长速率。 电磁辐射可以是诸如由扫描激光束产生的光的准直光,并且基板和形成的接触区域可以是硅或其它合适的材料。 该方法可以在存储器件和其它集成电路中的MOS晶体管的制造期间使用。