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    • 62. 发明申请
    • Method for Forming Thin Film Heat Dissipater
    • 薄膜散热器的形成方法
    • US20110151609A1
    • 2011-06-23
    • US13037361
    • 2011-03-01
    • Kuo-Ching CHIANG
    • Kuo-Ching CHIANG
    • H01L21/02
    • H01L35/32F25B21/04H01L35/34
    • The present invention discloses a method of forming Peltier diodes comprising providing a substrate and forming a conductive pattern over the substrate. An isolation layer is formed over the conductive pattern; followed by forming cavities in the isolation layer and refilling a semiconductor layer into the cavities, thereby forming a first and a second semiconductors, wherein the first and second semiconductors are formed by silicon or III-V group material; A Peltier junction is formed on the isolation layer to connect the first and the second semiconductors, thereby forming the Peltier diodes, wherein electricity is applied to the Peltier diodes for transferring heat.
    • 本发明公开了一种形成珀耳帖二极管的方法,包括提供衬底并在衬底上形成导电图案。 在导电图案之上形成隔离层; 随后在隔离层中形成空腔并将半导体层再填充到空腔中,从而形成第一和第二半导体,其中第一和第二半导体由硅或III-V族材料形成; 在隔离层上形成珀尔帖接头以连接第一和第二半导体,从而形成珀尔帖二极管,其中向珀尔帖二极管施加电力以传递热量。