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61. 发明授权

US08669628B2 Magnetoresistive element and magnetic memory using the same 有权
标题翻译：磁阻元件和使用其的磁存储器
公开(公告)号：US08669628B2
公开(公告)日：2014-03-11
申请号：US13424072
申请日：2012-03-19
申请人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
发明人： Koji Ueda , Katsuya Nishiyama , Toshihiko Nagase , Daisuke Watanabe , Eiji Kitagawa , Tadashi Kai
IPC分类号： H01L29/82
CPC分类号： H01L27/228 , G11C11/161 , H01L43/08
摘要： According to one embodiment, a magnetoresistive element includes the following configuration. First nonmagnetic layer is provided between the first magnetic layer (storage layer) and the second magnetic layer (reference layer). Third magnetic layer is formed on a surface of the storage layer, which is opposite to a surface on which the first nonmagnetic layer is formed. Fourth magnetic layer is formed on a surface of the reference layer, which is opposite to a surface on which the first nonmagnetic layer is formed. The third and fourth magnetic layers have a magnetization antiparallel to the magnetization of the storage layer. Second nonmagnetic layer is located between the storage and third magnetic layers. Third nonmagnetic layer is located between the reference and fourth magnetic layers. The thickness of the fourth magnetic layer is smaller than that of the third magnetic layer.
摘要翻译：根据一个实施例，磁阻元件包括以下构造。第一非磁性层设置在第一磁性层（存储层）和第二磁性层（参考层）之间。第三磁性层形成在存储层的与形成有第一非磁性层的表面相反的表面上。第四磁性层形成在与形成第一非磁性层的表面相反的参考层的表面上。第三和第四磁性层具有与存储层的磁化反平行的磁化。第二非磁性层位于存储和第三磁性层之间。第三非磁性层位于参考和第四磁性层之间。第四磁性层的厚度小于第三磁性层的厚度。

62. 发明申请

US20130249025A1 MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE RANDOM ACCESS MEMORY WITH THE SAME 审中-公开
标题翻译：磁性元件和磁阻随机存取存储器
公开(公告)号：US20130249025A1
公开(公告)日：2013-09-26
申请号：US13607700
申请日：2012-09-08
申请人： Katsuaki NATORI , Toshihiko Nagase , Eiji Kitagawa , Tadashi Kai
发明人： Katsuaki NATORI , Toshihiko Nagase , Eiji Kitagawa , Tadashi Kai
IPC分类号： H01L43/02 , H01L43/12
CPC分类号： H01L43/02 , H01L27/228 , H01L43/08 , H01L43/12
摘要： According to one embodiment, a magnetoresistive element includes a bottom electrode, a first magnetic layer with an magnetic axis substantially perpendicular to a film plane thereof, a first interface layer, an MgO insulating layer, a second interface layer, a second magnetic layer with an magnetic axis nearly perpendicular to a film plane thereof, and a top electrode. The magnetoresistive element has a diffusion barrier layer between the first magnetic layer and the first interface layer when the first magnetic layer contains Pt or Pd, and a diffusion barrier layer between the second magnetic layer and the second interface layer when the second magnetic layer contains Pt or Pd. The diffusion barrier layer is an Hf film of thickness 0.6 nm to 0.8 nm.
摘要翻译：根据一个实施例，磁阻元件包括底电极，具有基本上垂直于其膜平面的磁轴的第一磁性层，第一界面层，MgO绝缘层，第二界面层，具有几乎垂直于其膜平面的磁轴和顶部电极。当第一磁性层包含Pt或Pd时，磁阻元件在第一磁性层和第一界面层之间具有扩散阻挡层，当第二磁性层含有Pt时，第二磁性层和第二界面层之间具有扩散阻挡层或Pd。扩散阻挡层是厚度为0.6nm〜0.8nm的Hf膜。

63. 发明授权

US08349622B2 Magneto-resistive element 有权
公开(公告)号：US08349622B2
公开(公告)日：2013-01-08
申请号：US12361575
申请日：2009-01-29
申请人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
发明人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
IPC分类号： H01L29/72
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.

64. 发明申请

US20090166322A1 MAGNETO-RESISTIVE ELEMENT 有权
标题翻译：磁电元件
公开(公告)号：US20090166322A1
公开(公告)日：2009-07-02
申请号：US12361575
申请日：2009-01-29
申请人： Sumio IKEGAWA , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
发明人： Sumio IKEGAWA , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
IPC分类号： B44C1/22
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.
摘要翻译：根据本发明的一个方面的磁阻元件包括磁化状态改变的自由层和固定磁化状态的固定层。自由层包括第一和第二铁磁层和布置在第一和第二铁磁层之间的非磁性层。第一和第二铁磁层之间的交换耦合强度被设定为使得硬轴方向上的星形曲线打开。

65. 发明授权

US07518906B2 Magneto-resistive element 有权
标题翻译：磁阻元件
公开(公告)号：US07518906B2
公开(公告)日：2009-04-14
申请号：US11378351
申请日：2006-03-20
申请人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
发明人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
IPC分类号： G11C11/00
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.
摘要翻译：根据本发明的一个方面的磁阻元件包括磁化状态改变的自由层和固定磁化状态的固定层。自由层包括第一和第二铁磁层和布置在第一和第二铁磁层之间的非磁性层。第一和第二铁磁层之间的交换耦合强度被设定为使得硬轴方向上的星形曲线打开。

66. 发明授权

US08530887B2 Magnetoresistive element, method of manufacturing the same, and magnetic memory 有权
标题翻译：磁阻元件，其制造方法和磁存储器
公开(公告)号：US08530887B2
公开(公告)日：2013-09-10
申请号：US13050692
申请日：2011-03-17
申请人： Eiji Kitagawa , Tadashi Kai , Tadaomi Daibou , Yutaka Hashimoto , Hiroaki Yoda
发明人： Eiji Kitagawa , Tadashi Kai , Tadaomi Daibou , Yutaka Hashimoto , Hiroaki Yoda
IPC分类号： H01L27/15
CPC分类号： H01L43/08 , H01L27/228 , H01L43/12
摘要： A magnetoresistive element according to an embodiment includes: a first magnetic layer; a tunnel barrier layer on the first magnetic layer; a second magnetic layer placed on the tunnel barrier layer and containing CoFe; and a nonmagnetic layer placed on the second magnetic layer, and containing nitrogen and at least one element selected from the group consisting of B, Ta, Zr, Al, and Ce.
摘要翻译：根据实施例的磁阻元件包括：第一磁性层; 在第一磁性层上的隧道阻挡层; 放置在隧道势垒层上并含有CoFe的第二磁性层; 以及放置在第二磁性层上的非磁性层，并含有氮和选自B，Ta，Zr，Al和Ce中的至少一种元素。

67. 发明申请

US20070070689A1 Magneto-resistive element 有权
标题翻译：磁阻元件
公开(公告)号：US20070070689A1
公开(公告)日：2007-03-29
申请号：US11378351
申请日：2006-03-20
申请人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
发明人： Sumio Ikegawa , Masahiko Nakayama , Tadashi Kai , Eiji Kitagawa , Hiroaki Yoda
IPC分类号： G11C11/14
CPC分类号： G11C11/1657 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675
摘要： A magneto-resistive element according to an aspect of the present invention includes a free layer whose magnetized state changes and a pinned layer whose magnetized state is fixed. The free layer comprises first and second ferromagnetic layers and a non-magnetic layer which is arranged between the first and second ferromagnetic layers. An intensity of exchange coupling between the first and second ferromagnetic layers is set so that an astroid curve in a hard axis direction opens.
摘要翻译：根据本发明的一个方面的磁阻元件包括磁化状态改变的自由层和固定磁化状态的固定层。自由层包括第一和第二铁磁层和布置在第一和第二铁磁层之间的非磁性层。第一和第二铁磁层之间的交换耦合强度被设定为使得硬轴方向上的星形曲线打开。

68. 发明授权

US08879307B2 Magnetoresistive device and nonvolatile memory with the same 有权
标题翻译：磁阻器件与非易失性存储器相同
公开(公告)号：US08879307B2
公开(公告)日：2014-11-04
申请号：US13424769
申请日：2012-03-20
申请人： Eiji Kitagawa , Naoharu Shimomura , Hiroaki Yoda , Junichi Ito , Minoru Amano , Chikayoshi Kamata , Keiko Abe
发明人： Eiji Kitagawa , Naoharu Shimomura , Hiroaki Yoda , Junichi Ito , Minoru Amano , Chikayoshi Kamata , Keiko Abe
IPC分类号： G11C11/00 , G11C11/16 , G11C19/08
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808
摘要： A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.
摘要翻译：实施例的磁阻装置包括：第一和第二装置，每个包括：具有垂直于膜平面的可变磁化的第一磁性层，具有固定和垂直磁化的第二磁性层，以及介于第一和第二磁化层之间的非磁性层磁性层，所述第一和第二装置平行布置在互连层的第一面上; 以及包括具有垂直磁各向异性并且具有可变磁化的第三磁性层的TMR器件，具有与膜平面平行的固定磁化强度的第四磁性层和介于第三和第四磁性层之间的隧道势垒层，TMR器件布置在所述互连层的第二面上，并且所述第三磁性层被静磁耦合到所述第一和第二器件的第一磁性层。

69. 发明授权

US08930173B2 Vehicle behavior estimation device 有权
标题翻译：车辆行为估计装置
公开(公告)号：US08930173B2
公开(公告)日：2015-01-06
申请号：US13158630
申请日：2011-06-13
申请人： Takuro Ikeda , Eiji Kitagawa
发明人： Takuro Ikeda , Eiji Kitagawa
IPC分类号： G06G7/48 , G05B17/02 , G08G1/01
CPC分类号： G05B17/02 , G08G1/01
摘要： A vehicle behavior estimation device includes: a storage unit configured to store a restriction condition at a point of a vehicle for which behavior is estimated; vehicle state data that includes position information and speed information of the vehicle; behavior parameters that include speed information and acceleration information of the vehicle; and physical restriction conditions that include an upper limit and a lower limit of the acceleration information; and a processor configured to obtain the vehicle state data by using the restriction condition at the point; calculate behavior parameters of a vehicle model that satisfy a physical restriction condition from the vehicle state data and the restriction condition at the point; update the vehicle state data of the vehicle model based on the behavior parameters; and repeat processing to calculate behavior parameters by using the updated vehicle state data and to update the vehicle state data.
摘要翻译：车辆行为估计装置包括：存储单元，被配置为在估计行为的车辆的某一点处存储限制条件; 车辆状态数据，其包括车辆的位置信息和速度信息; 包括车辆的速度信息和加速度信息的行为参数; 以及包括加速度信息的上限和下限的物理限制条件; 以及处理器，被配置为通过使用该点处的限制条件来获得车辆状态数据; 从车辆状态数据和该点的限制条件计算满足物理限制条件的车辆模型的行为参数; 基于行为参数来更新车辆模型的车辆状态数据; 并且通过使用更新的车辆状态数据来重复处理以计算行为参数并更新车辆状态数据。

70. 发明申请

US20110313740A1 VEHICLE BEHAVIOR ESTIMATION DEVICE 有权
标题翻译：车辆行为估计装置
公开(公告)号：US20110313740A1
公开(公告)日：2011-12-22
申请号：US13158630
申请日：2011-06-13
申请人： Takuro IKEDA , Eiji Kitagawa
发明人： Takuro IKEDA , Eiji Kitagawa
IPC分类号： G06G7/70 , G06F17/10
CPC分类号： G05B17/02 , G08G1/01
摘要： A vehicle behavior estimation device includes: a storage unit configured to store a restriction condition at a point of a vehicle for which behavior is estimated; vehicle state data that includes position information and speed information of the vehicle; behavior parameters that include speed information and acceleration information of the vehicle; and physical restriction conditions that include an upper limit and a lower limit of the acceleration information; and a processor configured to obtain the vehicle state data by using the restriction condition at the point; calculate behavior parameters of a vehicle model that satisfy a physical restriction condition from the vehicle state data and the restriction condition at the point; update the vehicle state data of the vehicle model based on the behavior parameters; and repeat processing to calculate behavior parameters by using the updated vehicle state data and to update the vehicle state data.
摘要翻译：车辆行为估计装置包括：存储单元，被配置为在估计行为的车辆的某一点处存储限制条件; 车辆状态数据，其包括车辆的位置信息和速度信息; 包括车辆的速度信息和加速度信息的行为参数; 以及包括加速度信息的上限和下限的物理限制条件; 以及处理器，被配置为通过使用该点处的限制条件来获得车辆状态数据; 从车辆状态数据和该点的限制条件计算满足物理限制条件的车辆模型的行为参数; 基于行为参数来更新车辆模型的车辆状态数据; 并且通过使用更新的车辆状态数据来重复处理以计算行为参数并更新车辆状态数据。

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