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    • 61. 发明授权
    • Method and system for tailoring core and periphery cells in a nonvolatile memory
    • 用于定制非易失性存储器中的核心和外围单元的方法和系统
    • US06808992B1
    • 2004-10-26
    • US10150240
    • 2002-05-15
    • Kelwin KoShenqing FangAngela T. HuiHiroyuki KinoshitaWenmei LiYu SunHiroyuki Ogawa
    • Kelwin KoShenqing FangAngela T. HuiHiroyuki KinoshitaWenmei LiYu SunHiroyuki Ogawa
    • H01L21336
    • H01L27/11526H01L27/105H01L27/11536H01L29/6656
    • A method and system for providing a semiconductor device are described. The semiconductor device includes a substrate, a core and a periphery. The core includes a plurality of core gate stacks having a first plurality of edges, while the periphery a plurality of periphery gate stacks having a second plurality of edges. The method and system include providing a plurality of core spacers, a plurality of periphery spacers, a plurality of core sources and a plurality of conductive regions. The core spacers reside at the first plurality of edges and have a thickness. The periphery spacers reside at the second plurality of edges and have a second thickness greater than the first thickness. The core sources reside between the plurality of core gate stacks. The conductive regions are on the plurality of core sources. This method allows different thicknesses of the spacers to be formed in the core and the periphery so that the spacers can be tailored to the different requirements of the core and periphery.
    • 描述了一种用于提供半导体器件的方法和系统。 半导体器件包括衬底,芯和周边。 芯包括具有第一多个边缘的多个核心栅极叠层,而周边具有多个具有第二多个边缘的外围栅极堆叠。 该方法和系统包括提供多个芯间隔件,多个外围间隔件,多个芯源和多个导电区域。 芯间隔件位于第一多个边缘处并且具有厚度。 外围间隔件位于第二多个边缘处并且具有大于第一厚度的第二厚度。 核心源位于多个核心门堆栈之间。 导电区域在多个核心源上。 该方法允许不同厚度的间隔件形成在芯部和周边中,使得间隔件可以根据芯部和周边的不同要求进行调整。
    • 62. 发明授权
    • Emulsion ink for stencil printing and its use
    • 用于模版印刷的乳液油墨及其用途
    • US06663701B2
    • 2003-12-16
    • US10042238
    • 2002-01-11
    • Hiroyuki OgawaHideaki Takayama
    • Hiroyuki OgawaHideaki Takayama
    • C09D1100
    • C09D11/0235
    • An emulsion ink for stencil printing comprises 20 to 50 wt. % of an oil phase and 50 to 80 wt. % of a water phase, and contains at least one kind of a vegetable oil with an iodine number ranging from 110 to 150 in the oil phase at least in an amount indicated by the following formula in wt. %, and an antioxidant in an amount ranging from 1 to 10 wt. % based on the content of the vegetable oil: Minimum amount of vegetable oil in wt. %=amount of water in ink in wt. %×(100/iodine number)×0.09. The ink causes no clogging or offset when a printer is not in operation and the ink is left in a printing drum of the printer for a long period of time. Disclosed is also a printed matter printed by the emulsion ink of the present invention.
    • 用于模版印刷的乳液油墨包含20至50wt。 %的油相和50〜80wt。 %的水相,并且在油相中含有至少一种碘值为110-150的植物油,至少以下式表示的量为wt。 %,抗氧化剂的量为1〜10重量%。 基于植物油含量的%:最低植物油重量。 %=墨水中的水重量。 %x(100 /碘值)x0.09.当打印机不工作时,墨水不会堵塞或偏移,墨水长时间留在打印机的打印鼓中。 由本发明的乳液油墨印刷的物质。
    • 64. 发明授权
    • Method for fabricating semiconductor device
    • 制造半导体器件的方法
    • US06235558B1
    • 2001-05-22
    • US09540218
    • 2000-03-31
    • Akihiro OdaSumio KatoHiroyuki Ogawa
    • Akihiro OdaSumio KatoHiroyuki Ogawa
    • H01L21335
    • H01L29/66757H01L29/78621H01L29/78627
    • There is provided a method for stably fabricating a TFT having a GOLD structure capable of ensuring sufficiently high ON-state current and sufficiently low OFF-state current at the same time and superior in hot carrier resistance. The method includes forming a semiconductor layer of a specified configuration and then forming a gate insulator film on the semiconductor layer, forming a lightly doped region by doping the semiconductor layer with dopants at low concentration by using as a mask a dopant blocking film formed on the gate insulator film. The method further includes forming a gate electrode having a length reaching the lightly doped region after removing the dopant blocking film, forming an anodic oxide layer on each side face of the gate electrode by anodically oxidizing the gate electrode, forming a heavily doped region by doping the semiconductor layer with dopants by using as a mask the gate electrode and the anodic oxide layer, and removing the anodic oxide layer.
    • 提供了一种用于稳定地制造具有能够同时确保足够高的导通状态电流和充分低的截止状态电流的GOLD结构的TFT并且具有优异的热载流子电阻的方法。 该方法包括形成具有特定构造的半导体层,然后在半导体层上形成栅极绝缘膜,通过使用形成在该半导体层上的掺杂剂阻挡膜作为掩模,以低浓度掺杂半导体层,掺杂半导体层,形成轻掺杂区域 栅极绝缘膜。 该方法还包括在除去掺杂物阻挡膜之后形成长度达到轻掺杂区的栅电极,通过阳极氧化栅电极在栅电极的每个侧面上形成阳极氧化层,通过掺杂形成重掺杂区 通过使用栅电极和阳极氧化层作为掩模,并且去除阳极氧化物层来形成具有掺杂剂的半导体层。
    • 69. 发明授权
    • Power transmission device
    • 动力传动装置
    • US08992376B2
    • 2015-03-31
    • US13580561
    • 2010-02-22
    • Hiroyuki OgawaAkira MurakamiDaisuke TomomatsuTakahiro Shiina
    • Hiroyuki OgawaAkira MurakamiDaisuke TomomatsuTakahiro Shiina
    • F16H15/52
    • F16H15/52
    • A power transmission device includes first and second rings arranged opposite each other, having a common rotation center axis, and rotatable relative to each other; a plurality of planetary balls having rotation center axes parallel to the rotation center axis, and radially arranged between the first and second rings and around the rotation center axis; a transmission control unit configured to change a rotation ratio between the first and second rings by changing the respective contact points of the first and second rings and each of the planetary balls through tilting motion of each of the planetary balls; and a rotation restricting unit disposed between the planetary balls adjacent to each other.
    • 动力传递装置包括彼此相对布置的第一和第二环,具有共同的旋转中心轴线并且可相对于彼此旋转; 多个行星球,其旋转中心轴与旋转中心轴平行,并且径向配置在第一和第二环之间并且围绕旋转中心轴线; 变速器控制单元,其被配置为通过通过每个所述行星球的倾斜运动来改变所述第一和第二环和每个所述行星球的各个接触点来改变所述第一和第二环之间的旋转比; 以及设置在彼此相邻的行星球之间的旋转限制单元。