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    • 64. 发明授权
    • MOSFET circuit with separate and common electrodes
    • MOSFET电路具有单独和公共电极
    • US5406104A
    • 1995-04-11
    • US181890
    • 1994-01-14
    • Masaki HirotaTeruyoshi Mihara
    • Masaki HirotaTeruyoshi Mihara
    • H01L29/78H01L29/06H01L29/08H01L29/417H01L29/10H01L27/01H01L27/02
    • H01L29/0696H01L29/0878H01L29/7816H01L29/41758
    • A transistor circuit such as an integrated circuit contains at least first and second MOS transistors having drain electrode pair and source electrode pair, one of which is a pair of electrodes connected together and integrated into a common drain or source electrode, and the other of which is a pair of separate electrodes. In a semiconductor substrate, there are formed at least one common region, such as a drain contact region or a source region, connected with the common electrode, and a plurality of first and second individual regions selectively connected with the separate electrodes. Around the common region or each common region, a predetermined number of the individual regions are arranged in such a manner as to improve the thermal balance of the substrate and enable the downsizing of the device.
    • 诸如集成电路的晶体管电路至少包含具有漏极电极对和源电极对的至少第一和第二MOS晶体管,其中一个是连接在一起并集成在公共漏极或源极中的一对电极,另一个 是一对单独的电极。 在半导体基板中,形成有与公共电极连接的至少一个公共区域,例如漏极接触区域或源极区域,以及与分离电极选择性地连接的多个第一和第二单独区域。 在公共区域或每个公共区域周围,预定数量的各个区域以这样的方式布置,以便改善衬底的热平衡并且能够实现器件的小型化。