专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US6124190A Method of manufacturing semiconductor device with silicide layer without short circuit 失效
标题翻译：具有无短路的硅化物层的半导体器件的制造方法
公开(公告)号：US6124190A
公开(公告)日：2000-09-26
申请号：US988991
申请日：1997-12-11
申请人： Yoshiaki Yamamoto , Kazuo Aizawa
发明人： Yoshiaki Yamamoto , Kazuo Aizawa
IPC分类号： H01L21/28 , H01L21/285 , H01L21/336 , H01L29/78 , H01L21/3205 , H01L21/4763
CPC分类号： H01L29/665 , H01L21/28052 , H01L21/28518
摘要： In a method of manufacturing a semiconductor integrated circuit, a gate structure with sidewall insulating films and a field oxidation film are formed on a semiconductor substrate. Then, diffusion layers are formed for the gate structure with the sidewall insulating films. Subsequently, a surface layer is removed from each of the sidewall insulating films and the field oxidation film. Next, a silicide layer is formed in a surface layer of each of the diffusion layers in self-alignment with the gate structure with the sidewall insulating films and the field oxidation film.
摘要翻译：在制造半导体集成电路的方法中，在半导体衬底上形成具有侧壁绝缘膜和场氧化膜的栅极结构。然后，对于具有侧壁绝缘膜的栅极结构形成扩散层。随后，从每个侧壁绝缘膜和场氧化膜去除表面层。接下来，在与各侧壁绝缘膜和场氧化膜的栅极结构自对准的每个扩散层的表面层中形成硅化物层。

62. 发明授权

US5448891A Dehumidifier 失效
标题翻译：除湿机
公开(公告)号：US5448891A
公开(公告)日：1995-09-12
申请号：US201262
申请日：1994-02-24
申请人： Yasushi Nakagiri , Yoshiaki Yamamoto , Hisaaki Gyoten , Shoko Nakasuji
发明人： Yasushi Nakagiri , Yoshiaki Yamamoto , Hisaaki Gyoten , Shoko Nakasuji
IPC分类号： B01D53/26 , F24F1/00 , F24F5/00 , H01L37/04 , F25B21/02
CPC分类号： F25B21/02 , F24F5/0042 , H01L37/00
摘要： A dehumidifier of the present invention includes: a first frame; a second frame formed inside of the first frame, having a first opening and a second opening; and a unit for allowing air to flow from the first opening to the second opening, wherein the second frame has a hollow substrate, a thermoelectric element formed on a surface of the hollow substrate directly, a pair of electrodes, connected to the thermoelectric element, for supplying an electric current to the thermoelectric element, and the thermoelectric element causes a temperature difference between the outer surface and the inner surface of the second frame.
摘要翻译：本发明的除湿机包括：第一框架; 形成在第一框架内部的第二框架，具有第一开口和第二开口; 以及用于允许空气从第一开口流到第二开口的单元，其中第二框架具有中空基板，直接形成在中空基板的表面上的热电元件，连接到热电元件的一对电极，用于向所述热电元件供给电流，并且所述热电元件引起所述第二框架的外表面和内表面之间的温度差。

63. 发明授权

US08822255B2 Method of manufacturing a solar cell module and apparatus of manufacturing a solar cell module 有权
标题翻译：制造太阳能电池模块的方法和制造太阳能电池组件的装置
公开(公告)号：US08822255B2
公开(公告)日：2014-09-02
申请号：US13393654
申请日：2010-08-30
申请人： Yoshiaki Yamamoto , Hitoshi Ikeda , Tomoki Ohnishi , Kouichi Tamagawa
发明人： Yoshiaki Yamamoto , Hitoshi Ikeda , Tomoki Ohnishi , Kouichi Tamagawa
IPC分类号： H01L31/18
CPC分类号： B23K26/36 , B23K26/40 , B23K2103/172 , H01L31/046 , H01L31/0463 , H01L31/18 , Y02E10/50
摘要： A method of manufacturing a solar cell, which includes an edge deletion step using a laser beam, and a manufacturing apparatus which is used in such a method, the method and the apparatus being capable of preventing a shunt and cracks from being generated are provided. By radiating a first laser beam to a multilayer body, which includes a transparent electrode layer, a photoelectric conversion layer, and a back electrode layer sequentially formed on a transparent substrate, from a side of the transparent substrate, the photoelectric conversion layer and the back electrode layer in a first region are removed, and by radiating a second laser beam into the region such that the second laser beam is spaced from a peripheral rim of the region, the transparent electrode layer in a second region is removed.
摘要翻译：提供一种制造太阳能电池的方法，其包括使用激光束的边缘删除步骤以及在这种方法中使用的制造装置，能够防止分流和裂纹产生的方法和装置。通过将第一激光束照射到多层体，其包括从透明基板侧，光电转换层和背面的透明基板上依次形成的透明电极层，光电转换层和背面电极层去除第一区域中的电极层，并且通过将第二激光束照射到该区域中，使得第二激光束与该区域的外围边缘间隔开，从而去除第二区域中的透明电极层。

64. 发明授权

US08546210B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08546210B2
公开(公告)日：2013-10-01
申请号：US12794120
申请日：2010-06-04
申请人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
发明人： Yoshiaki Yamamoto , Koichiro Tanaka , Atsuo Isobe , Daisuke Ohgarane , Shunpei Yamazaki
IPC分类号： H01L21/336
CPC分类号： H01L21/6835 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L21/84 , H01L23/544 , H01L24/29 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L27/12 , H01L29/78603 , H01L29/78648 , H01L2221/6835 , H01L2223/5442 , H01L2223/54426 , H01L2223/6677 , H01L2224/16 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/32225 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2224/83191 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01076 , H01L2924/01077 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/04941 , H01L2924/04953 , H01L2924/0665 , H01L2924/0781 , H01L2924/10253 , H01L2924/12044 , H01L2924/14 , H01L2924/15788 , H01L2924/19043 , H01L2924/30105 , H01Q1/38 , H01Q9/285 , H01Q23/00 , Y10S438/982 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light.
摘要翻译：本发明的目的是提供一种通过与专利文献1中公开的方法不同的方法从衬底分离薄膜晶体管和包括薄膜晶体管的电路或半导体器件的方法，并且将薄膜晶体管，以及电路或半导体器件到具有柔性的衬底。根据本发明，在绝缘膜上形成大的开口或多个开口，在开口处形成连接到薄膜晶体管的导电膜，并且去除剥离层，然后，将具有薄的薄膜晶体管转置到具有导电膜等的基板上。根据本发明的薄膜晶体管具有通过激光照射而结晶的半导体膜，并且防止剥离层在不被激光照射的激光照射下曝光。

65. 发明授权

US08202825B2 Solid lubricant and sliding member 有权
标题翻译：固体润滑剂和滑动构件
公开(公告)号：US08202825B2
公开(公告)日：2012-06-19
申请号：US12439858
申请日：2007-09-04
申请人： Yoshiaki Yamamoto
发明人： Yoshiaki Yamamoto
IPC分类号： C10M111/00 , C10M169/00
CPC分类号： C10M169/04 , C10M133/42 , C10M2201/053 , C10M2201/085 , C10M2205/022 , C10M2205/0225 , C10M2205/14 , C10M2205/16 , C10M2205/163 , C10M2207/125 , C10M2207/281 , C10M2209/084 , C10M2213/02 , C10M2213/062 , C10M2215/04 , C10M2215/08 , C10M2215/2203 , C10M2217/041 , C10M2217/0415 , C10M2217/042 , C10M2217/044 , C10M2217/0443 , C10M2217/045 , C10M2223/04 , C10N2210/01 , C10N2230/06 , C10N2240/02 , C10N2250/08 , C10N2250/14 , C10N2250/18 , F16C33/201 , F16C33/24 , C10N2210/04
摘要： There are provided a solid lubricant having an island-and-sea structure, which, with the sea phase strengthened, remains free of troubles such as chipping even in use under high load conditions, and a sliding member having the solid lubricant embedded therein. The solid lubricant comprises 1 to 10% by volume of a polyethylene resin, 20 to 60% by volume of a hydrocarbon-based wax, 10 to 60% by volume of melamine cyanurate, 5 to 15% by volume of a polyamide resin, and 2 to 10% by volume of a modified polyethylene resin. The sliding member has the solid lubricant embedded in pores or grooves formed in a sliding surface of the sliding member body.
摘要翻译：提供了一种具有岛海结构的固体润滑剂，即使在高负载条件下使用时，海相强化也保持无切屑等问题，并且内嵌有固体润滑剂的滑动部件。固体润滑剂包含1至10体积％的聚乙烯树脂，20至60体积％的烃类蜡，10至60体积％的三聚氰胺氰尿酸酯，5至15体积％的聚酰胺树脂，和 2〜10体积％的改性聚乙烯树脂。滑动构件具有嵌入在滑动构件主体的滑动表面中形成的孔或槽中的固体润滑剂。

66. 发明授权

US07929154B2 Laser irradiation apparatus and laser irradiation method and method for manufacturing semiconductor device 有权
标题翻译：激光照射装置及激光照射方法及半导体装置的制造方法
公开(公告)号：US07929154B2
公开(公告)日：2011-04-19
申请号：US11640394
申请日：2006-12-18
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： G01B11/14
CPC分类号： B23K26/0853 , B23K26/04 , B23K26/0738 , G03F9/7088 , H01L21/02675 , H01L21/2026
摘要： The present invention provides a laser irradiation apparatus and a laser irradiation method which can conduct irradiation of a laser beam accurately by correcting misalignment of an irradiation position of the laser beam from the predetermined position due to temperature change. A laser irradiation apparatus includes a laser oscillator emitting a laser beam; an XY stage provided with an irradiation object; an optical system which shapes the laser beam into a linear beam on a surface of the irradiation object provided on the XY stage; an illumination device which emits light to the surface of the irradiation object; and a camera for imaging reflected light of the light on the surface of the irradiation object, in which misalignment of an irradiation position of the linear beam detected from the reflected light imaged by the camera is corrected.
摘要翻译：本发明提供一种激光照射装置和激光照射方法，该激光照射装置和激光照射方法能够通过校正由于温度变化导致的来自预定位置的激光束的照射位置的偏移而精确地进行激光束的照射。激光照射装置包括发射激光束的激光振荡器; 设置有照射物体的XY台阶; 光学系统，其将激光束成形为设置在XY台上的照射物体的表面上的线性光束; 向照射物体的表面发光的照明装置; 以及用于对照射物体的表面上的光的反射光进行成像的相机，其中从由照相机成像的反射光检测到的线性光束的照射位置的未对准被校正。

67. 发明授权

US07790533B2 Laser irradiation method, laser irradiation apparatus, and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07790533B2
公开(公告)日：2010-09-07
申请号：US10582614
申请日：2005-06-15
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/02675 , B23K26/0604 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , H01L21/02678 , H01L21/2026 , H01L21/268 , H01L27/12 , H01L27/1285 , H01L29/78675 , H01S3/2383
摘要： The present invention is to provide a technique that can increase productivity with high output power by combining a plurality of laser beams on an irradiation surface without any difficulties in optical alignment. According to this technique, laser beams having different wavelengths are combined using a plurality of laser oscillators and a dichroic mirror, or additionally a polarizer. For example, a first laser beam emitted from a first laser oscillator is combined with a second laser beam emitted from a second laser oscillator having different wavelength from the first laser beam in such a way that the first laser beam passes through a dichroic mirror and the second laser beam is reflected on the dichroic mirror, and the combined laser beam is projected to an irradiation surface.
摘要翻译：本发明是提供一种通过在照射面上组合多个激光束而能够以高输出功率提高生产率的技术，而不会使光取向困难。根据该技术，使用多个激光振荡器和分色镜或另外的偏振器来组合具有不同波长的激光束。例如，从第一激光振荡器发射的第一激光束与从第一激光束具有不同波长的第二激光振荡器发射的第二激光束组合，使得第一激光束通过二向色镜，并且第二激光束在分色镜上反射，并且将组合的激光束投射到照射表面。

68. 发明授权

US07704765B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07704765B2
公开(公告)日：2010-04-27
申请号：US11889110
申请日：2007-08-09
申请人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
发明人： Junya Maruyama , Atsuo Isobe , Susumu Okazaki , Koichiro Tanaka , Yoshiaki Yamamoto , Koji Dairiki , Tomoko Tamura
IPC分类号： H01L21/00 , H01L21/76
CPC分类号： H01L27/1266 , H01L21/6835 , H01L24/83 , H01L27/1214 , H01L27/1218 , H01L2221/6835 , H01L2221/68368 , H01L2224/83 , H01L2924/01029 , H01L2924/12041 , H01L2924/12042 , H01L2924/12044 , H01L2924/14 , H01L2924/15787 , H01L2924/19041 , H01L2924/3025 , H01L2924/3512 , H01L2924/00
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device, capable of keeping a peeling layer from being peeled from a substrate in the phase before the completion of a semiconductor element and peeling a semiconductor element rapidly. It is considered that a peeling layer tends to be peeled from a substrate because the stress is applied to a peeling layer due to the difference in thermal expansion coefficient between a substrate and a peeling layer, or because the volume of a peeling layer is reduced and thus the stress is applied thereto by crystallization of the peeling layer due to heat treatment. Therefore, according to one feature of the invention, the adhesion of a substrate and a peeling layer is enhanced by forming an insulating film (buffer film) for relieving the stress on the peeling layer between the substrate and the peeling layer before forming the peeling layer over the substrate.
摘要翻译：本发明的目的是提供一种制造半导体器件的方法，该半导体器件的制造方法能够在半导体元件完成之前相位保持剥离层从基板剥离并快速剥离半导体元件。由于衬底和剥离层之间的热膨胀系数的差异，或者由于剥离层的体积减小，由于将剥离层施加到剥离层上，因此认为剥离层倾向于剥离，因此通过热处理使剥离层结晶而施加应力。因此，根据本发明的一个特征，通过在形成剥离层之前形成用于缓解基板和剥离层之间的剥离层上的应力的绝缘膜（缓冲膜），增强了基板和剥离层的粘附性在基板上。

69. 发明授权

US07615424B2 Laser irradiation apparatus and method for manufacturing semiconductor device using the laser irradiation apparatus 有权
标题翻译：激光照射装置及使用该激光照射装置的半导体装置的制造方法
公开(公告)号：US07615424B2
公开(公告)日：2009-11-10
申请号：US11087843
申请日：2005-03-24
申请人： Koichiro Tanaka , Yoshiaki Yamamoto , Nami Kosaka
发明人： Koichiro Tanaka , Yoshiaki Yamamoto , Nami Kosaka
IPC分类号： H01L21/00 , H01L21/84 , H01L31/036
CPC分类号： B23K26/04 , B23K26/0736 , B23K26/0853 , G02B27/0944 , H01L27/3244
摘要： An object of the present invention is to provide a laser irradiation method being able to control the irradiation position of the laser beam accurately compared with the conventional irradiation method. Another object of the present invention is to provide a method for manufacturing a semiconductor device with the use of the laser irradiation method being able to irradiate a large substrate accurately with the laser beam.The irradiation position of the laser beam is controlled by using a laser oscillator emitting a laser beam, an optical system for shaping the laser beam into rectangular on the irradiation object, means for moving the irradiation object relative to the laser beam in the long-side direction and the short-side direction of the beam spot, means for moving the irradiation object more slowly in the long-side direction than in the short-side direction, and a laser positioning mechanism.
摘要翻译：本发明的目的是提供一种能够与传统的照射方法相比准确地控制激光束的照射位置的激光照射方法。本发明的另一个目的是提供一种使用激光照射方法制造半导体器件的方法，该方法能够用激光束精确地照射大的衬底。激光束的照射位置通过使用发射激光束的激光振荡器，用于将激光束成形为照射对象上的矩形的光学系统来控制，用于使照射对象相对于激光束在长边移动的装置光束点的方向和短边方向，用于使照射物体在长边方向上比在短边方向上更慢地移动的装置，以及激光定位机构。

70. 发明授权

US07585791B2 Laser irradiation method, laser irradiation apparatus and method for manufacturing semiconductor device 有权
标题翻译：激光照射方法，激光照射装置以及半导体装置的制造方法
公开(公告)号：US07585791B2
公开(公告)日：2009-09-08
申请号：US10584729
申请日：2005-10-18
申请人： Koichiro Tanaka , Yoshiaki Yamamoto
发明人： Koichiro Tanaka , Yoshiaki Yamamoto
IPC分类号： H01L21/00 , C30B13/00
CPC分类号： H01L21/02683 , B23K26/0736 , B23K26/0738 , B23K26/0853 , H01L21/02422 , H01L21/02532 , H01L21/02686 , H01L21/2026 , H01L21/268 , H01L27/1255 , H01L27/1266 , H01L27/1285 , H01L27/1296 , H01L29/78621 , H01L29/78648 , Y10T117/1076
摘要： In conducting laser annealing using a CW laser or a quasi-CW laser, productivity is not high as compared with an excimer laser and thus, it is necessary to further enhance productivity. According to the present invention, a fundamental wave is used without putting laser light into a non linear optical element, and laser annealing is conducted by irradiating a semiconductor thin film with pulsed laser light having a high repetition rate. A laser oscillator having a high output power can be used for laser annealing, since a non linear optical element is not used and thus light is not converted to a harmonic. Therefore, the width of a region having large grain crystals that is formed by scanning once can be increased, and thus the productivity can be enhanced dramatically.
摘要翻译：在使用CW激光或准CW激光进行激光退火时，与准分子激光相比，生产率不高，因此有必要进一步提高生产率。根据本发明，使用基波而不将激光投射到非线性光学元件中，并且通过用具有高重复率的脉冲激光照射半导体薄膜来进行激光退火。具有高输出功率的激光振荡器可用于激光退火，因为不使用非线性光学元件，因此光不转换成谐波。因此，可以增加通过扫描一次形成的具有大晶粒的区域的宽度，从而可以显着提高生产率。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式