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    • 65. 发明授权
    • Electric apparatus and residual electric charge discharging method
    • 电器和剩余电荷放电方法
    • US09329562B2
    • 2016-05-03
    • US14601303
    • 2015-01-21
    • Tatsuya Ishii
    • Tatsuya Ishii
    • G03G15/00
    • G03G15/80Y10T307/944
    • Example embodiments of the present invention include a power source; a load circuit; a relay provided between the power source and the load circuit; a rectifying circuit connected between an output terminal and an input terminal of the relay; a discharge circuit connected to the power source line on an input side of the relay and to perform, when turned on, discharging operation to discharge an electric charge that remains on each of the input side and an output side of the relay; and a discharge control circuit to turn on the discharge circuit to perform discharging operation when the relay is turned off to stop the power supply input to the load circuit.
    • 本发明的示例性实施例包括电源; 负载电路; 设置在电源和负载电路之间的继电器; 连接在继电器的输出端子和输入端子之间的整流电路; 连接到继电器的输入侧的电源线的放电电路,在接通时进行放电动作,放电剩余在继电器的输入侧和输出侧的电荷; 以及放电控制电路,用于在继电器断开时接通放电电路以执行放电操作,以停止对负载电路的电源输入。
    • 66. 发明授权
    • Image forming apparatus and communication control program product
    • 图像形成装置和通讯控制程序产品
    • US08743384B2
    • 2014-06-03
    • US13232246
    • 2011-09-14
    • Tatsuya IshiiYoshihisa Ashikawa
    • Tatsuya IshiiYoshihisa Ashikawa
    • G06K15/02
    • G03G15/5004G03G21/1652
    • An image forming apparatus is provided with a processing unit that performs a predetermined process, a power-supply shutting unit that shuts off power supply to the processing unit when a predetermined door is opened, a voltage detecting unit that detects a decrease in voltage at a point located posterior to the power-supply shutting unit, and a communication control unit that does not initiate communication with the processing unit if the decrease in voltage is detected by the voltage detecting unit before a start of the communication with the processing unit, and judges the just-ended communication as abnormal if the decrease in voltage is detected by the voltage detecting unit after the end of the communication with the processing unit.
    • 图像形成装置具有执行预定处理的处理单元,当预定门打开时切断对处理单元的电力供应的电源关闭单元,检测电压降低的电压检测单元 位于电源关闭单元后面的通信控制单元,以及通信控制单元,如果在与处理单元的通信开始之前由电压检测单元检测到电压降低,则不会启动与处理单元的通信,并判断 如果在与处理单元的通信结束之后电压检测单元检测到电压降低,刚刚通信就会异常。
    • 67. 发明授权
    • Electro-optical device and electronic apparatus
    • 电光装置和电子设备
    • US08247818B2
    • 2012-08-21
    • US13079277
    • 2011-04-04
    • Tatsuya Ishii
    • Tatsuya Ishii
    • H01L33/00
    • H01L29/78642G02F1/136227G02F2001/13685H01L27/1222
    • A semiconductor layer of a TFT is continuously formed from an inside of an open hole portion overlapping with an intersection up to an outside of the open hole portion and includes a first source/drain area electrically connected to a surface portion of the data line exposed to a bottom surface of the open hole portion, a channel area disposed on a side wall of the open hole portion, and a second source/drain area formed outside the open hole portion and electrically connected to the pixel electrode. The gate electrode of the TFT is formed inside the open hole portion so as to overlap with at least the channel area and is electrically connected to a scanning line.
    • TFT的半导体层从与开口部的交叉点重叠的开孔部的内部连续地形成,并且包括电连接到暴露于所述开口部的数据线的表面部的第一源极/漏极区域 露出孔部分的底面,设置在开孔部分的侧壁上的通道区域,以及形成在露出孔部分外部并电连接到像素电极的第二源极/漏极区域。 TFT的栅电极形成在开孔部内,以至少与沟道区重叠,并与扫描线电连接。
    • 68. 发明授权
    • Substrate for electro-optical device with light shielding section having various widths, electro-optical device, and electronic apparatus
    • 具有各种宽度的遮光部的电光装置的基板,电光装置和电子装置
    • US08168982B2
    • 2012-05-01
    • US12567268
    • 2009-09-25
    • Tatsuya Ishii
    • Tatsuya Ishii
    • H01L29/06
    • H01L29/78633G02F1/136209G02F1/136213H01L27/124H01L27/1255H01L29/42384H01L29/78621
    • Disclosed is a substrate for an electro-optical device including: a substrate; a plurality of data lines and a plurality of scanning lines which intersect with other on the substrate; a pixel electrode formed in each of a plurality of pixels which configure a display region on the substrate and are defined in correspondence with intersections between the plurality of data lines and the plurality of scanning lines; a transistor provided in each of non-opening regions which discriminate between opening regions of the plurality of pixels and including a semiconductor layer including a channel region having a channel length in one direction of the display region, a data line side source/drain region electrically connected to the data line, a pixel electrode side source/drain region electrically connected to the pixel electrode, a first junction region formed between the channel region and the data line side source/drain region, and a second junction region formed between the channel region and the pixel electrode side source/drain region; and a light-shielding section which is formed above each of the semiconductor layers, extends along the one direction, and includes a first portion which covers the first junction region and a second portion which covers the second junction region and has a width larger than that of the first portion in a direction intersecting the one direction.
    • 公开了一种电光装置用基板,具有:基板; 多个数据线和与该基板上的另一条相交的多个扫描线; 形成在多个像素中的每一个中的像素电极,其构成所述衬底上的显示区域并且与所述多条数据线与所述多条扫描线之间的交点对应地定义; 设置在每个非开放区域中的晶体管,其区分多个像素的开口区域,并且包括半导体层,所述半导体层包括在显示区域的一个方向上具有沟道长度的沟道区域,电子数据线侧源极/漏极区域 与像素电极电连接的像素电极侧源极/漏极区域,形成在沟道区域和数据线侧源极/漏极区域之间的第一结区域和形成在沟道区域之间的第二接合区域 和像素电极侧源极/漏极区域; 并且形成在每个所述半导体层之上的遮光部分沿着所述一个方向延伸,并且包括覆盖所述第一接合区域的第一部分和覆盖所述第二接合区域的宽度大于所述第二接合区域的宽度的第二部分。 的第一部分在与该一个方向相交的方向上。
    • 69. 发明申请
    • NONVOLATILE MEMORY
    • 非易失性存储器
    • US20110283054A1
    • 2011-11-17
    • US13086383
    • 2011-04-13
    • KENJI KOZAKAITakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • KENJI KOZAKAITakeshi NakamuraTatsuya IshiiMotoyasu TsunodaShinya IguchiJunichi Maruyama
    • G06F12/02
    • G06F12/0246G06F11/1068G06F12/06G06F2212/1036G11C16/04G11C16/10G11C16/349G11C29/44G11C29/76G11C2029/0409
    • For a nonvolatile memory permitting electrical writing and erasing of information to be stored, such as a flash memory, the load on the system developer is to be reduced, and it is to be made possible to avoid, even if such important data for the system as management and address translation information are damaged, an abnormal state in which the system becomes unable to operate. The nonvolatile memory is provided with a replacing function to replace a group of memory cells including defective memory cells which are incapable of normal writing or erasion with a group of memory cells including no defective memory cell, a numbers of rewrites averaging function to grasp the number of data rewrites in each group of memory cells and to so perform replacement of memory cell groups that there may arise no substantial difference in the number of rewrites among a plurality of memory cell groups, and an error correcting function to detect and correct any error in data stored in the memory array, wherein first address translation information deriving from the replacing function and second address translation information deriving from the numbers of rewrites averaging function are stored in respectively prescribed areas in the memory array, and the first address translation information and second address translation information concerning the same memory cell group are stored in a plurality of sets in a time series.
    • 对于允许电子写入和擦除要存储的信息(例如闪存)的非易失性存储器,系统开发者的负载将被减少,并且即使这样的系统的重要数据也可以避免 由于管理和地址转换信息被破坏,系统无法运行的异常状态。 非易失性存储器设置有替换功能,以替换包括不能正常写入或擦除的缺陷存储器单元的存储器单元组,所述存储器单元不包括不存在缺陷存储器单元的存储单元组,重写次数用于掌握数量 的每个存储器单元组中的数据重写,并且因此执行存储单元组的替换,使得多个存储单元组之间的重写次数可能没有显着差异,以及用于检测和校正任何错误的错误校正功能 存储在存储器阵列中的数据,其中从替换功能导出的第一地址转换信息和从重写平均函数导出的第二地址转换信息被存储在存储器阵列中的分别规定的区域中,并且第一地址转换信息和第二地址 关于相同存储单元组的翻译信息是sto 以时间序列的多个集合中的红色。