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61. 发明申请

US20090308054A1 METHOD FOR CONTROLLING NOx REDUCTION SYSTEM 有权
标题翻译：控制NOx还原系统的方法
公开(公告)号：US20090308054A1
公开(公告)日：2009-12-17
申请号：US12375315
申请日：2007-07-30
申请人： Naohiro Satoh , Osami Yamamoto , Koichi Inaba , Hiroshi Ohno
发明人： Naohiro Satoh , Osami Yamamoto , Koichi Inaba , Hiroshi Ohno
IPC分类号： F02D41/00 , F01N3/10
CPC分类号： B01D53/9422 , B01D2255/10 , B01D2255/2065 , B01D2255/20738 , B01D2255/9022 , B01J23/63 , B01J37/0244 , B01J37/0246 , F01N3/0814 , F01N3/0842 , F01N3/0864 , F01N3/2073 , F01N2240/25 , F01N2510/0684 , F01N2570/18 , F02B37/00 , Y02A50/2325 , Y02T10/22 , Y02T10/24
摘要： To provide a method for controlling a NOx reduction system which can remove NOx with a satisfactorily high efficiency even under low-temperature operating conditions as in diesel cars. The NOx reduction system comprises NOx treatment means disposed in an exhaust passage in an internal combustion engine, and air-fuel ratio control means for bringing the air-fuel ratio of an exhaust gas to a lean or rich state. The NOx treatment means comprises at least a first catalyst layer containing a solid acid catalyst capable of adsorbing ammonia and a second catalyst layer containing a noble metal and a cerium oxide material. The second catalyst layer and the first catalyst layer are stacked in that order on a carrier, and the first catalyst layer constitutes the uppermost layer. The air-fuel ratio control means controls so that the lean state and the rich state are repeated at predetermined intervals. According to the above constitution, NOx is passed through the first catalyst layer in the lean state and is temporarily stored in the second catalyst layer. Thereafter, in the rich state, NOx is converted to NH3 and is restored in the first catalyst layer. When the state is again returned to the lean state, NH3 is converted to nitrogen which is finally released from the first catalyst layer.
摘要翻译：提供一种用于控制NOx还原系统的方法，其可以在如柴油车辆中的低温操作条件下以令人满意的高效率除去NOx。 NOx还原系统包括设置在内燃机的排气通道中的NOx处理装置，以及用于使排气的空燃比变为稀薄或浓缩状态的空燃比控制装置。 NOx处理装置至少包括含有能够吸附氨的固体酸催化剂的第一催化剂层和含有贵金属和氧化铈材料的第二催化剂层。第二催化剂层和第一催化剂层依次层叠在载体上，第一催化剂层构成最上层。空燃比控制装置进行控制，使得以预定间隔重复稀薄状态和浓气状态。根据上述结构，NOx以贫态通过第一催化剂层，暂时保存在第二催化剂层中。此后，在富状态下，将NOx转化为NH 3并在第一催化剂层中恢复。当状态再次返回到贫态时，NH 3转化为最终从第一催化剂层释放的氮。

62. 发明授权

US07496718B2 Data transfer and access control between disk array systems 失效
标题翻译：磁盘阵列系统之间的数据传输和访问控制
公开(公告)号：US07496718B2
公开(公告)日：2009-02-24
申请号：US10992312
申请日：2004-11-17
申请人： Hiroshi Ohno , Kiichiro Urabe , Toshio Nakano , Hideo Tabuchi
发明人： Hiroshi Ohno , Kiichiro Urabe , Toshio Nakano , Hideo Tabuchi
IPC分类号： G06F12/00 , G06F12/16
CPC分类号： G06F3/065 , G06F3/061 , G06F3/0619 , G06F3/067 , G06F11/2058 , G06F11/2071 , Y10S707/99953 , Y10S707/99955
摘要： A method for copying information from a first storage subsystem to a second storage subsystem is disclosed. The first and second storage subsystems are provided in a data storage system. The method comprises transmitting first data block from the first storage subsystem to the second storage subsystem, the first storage subsystem being associated with a first host computer and the second storage subsystem being associated with a second host computer; and transmitting first attribute information from the first storage subsystem to the second storage subsystem without intervention from the first host computer.
摘要翻译：公开了一种将信息从第一存储子系统复制到第二存储子系统的方法。第一和第二存储子系统被提供在数据存储系统中。该方法包括将第一数据块从第一存储子系统发送到第二存储子系统，第一存储子系统与第一主计算机相关联，第二存储子系统与第二主计算机相关联; 以及在没有来自所述第一主计算机的介入的情况下将第一属性信息从所述第一存储子系统发送到所述第二存储子系统。

63. 发明申请

US20080216466A1 Sulfur Purge Control Device For An Internal Combustion Engine 有权
标题翻译：内燃机用硫吹扫控制装置
公开(公告)号：US20080216466A1
公开(公告)日：2008-09-11
申请号：US12044582
申请日：2008-03-07
申请人： Tomoko Morita , Norio Suzuki , Hiroshi Ohno
发明人： Tomoko Morita , Norio Suzuki , Hiroshi Ohno
IPC分类号： F01N9/00
CPC分类号： F02D41/028 , F01N3/035 , F01N3/0885 , F01N13/009 , F01N13/0097 , F01N2560/025 , F01N2560/026 , F01N2560/06 , F01N2560/14 , F02D41/0275 , F02D41/1439 , F02D41/1441 , F02D41/1445 , F02D2200/0806 , F02D2200/0818 , Y02T10/20
摘要： In a control device for an internal combustion engine provided with a NOx catalytic converter in an exhaust passage thereof, the progress of an undesired substance removal process is computed from the consumption of the reducing agent contained in the exhaust gas in the NOx catalytic converter. The undesired substance may include sulfur contents and NOx captured in the NOx catalytic converter. This computation may be based on the air fuel ratio of the exhaust gas upstream of the NOx catalytic converter and the estimated consumption of the reducing agent contained in the exhaust gas or on the difference between the air fuel ratios of the exhaust gas upstream and downstream of the NOx catalytic converter. In either case, the accuracy can be improved by taking into account the space velocity of the exhaust gas.
摘要翻译：在用于其排气通道中具有NOx催化转化器的内燃机的控制装置中，根据NOx催化转化器中的排气中所含的还原剂的消耗量计算出不需要的物质去除过程的进展。不期望的物质可以包括在NOx催化转化器中捕获的硫含量和NOx。该计算可以基于NOx催化转化器上游的废气的空燃比和废气中包含的还原剂的估计消耗量，或者废气上游和下游的排气的空燃比 NOx催化转化器。在这两种情况下，通过考虑废气的空间速度可以提高精度。

64. 发明授权

US07412543B2 Method for controlling storage system, and storage control apparatus 有权
标题翻译：控制存储系统的方法和存储控制装置
公开(公告)号：US07412543B2
公开(公告)日：2008-08-12
申请号：US11338797
申请日：2006-01-25
申请人： Hiroshi Ohno , Kouji Arai , Toshio Nakano , Hideo Tabuchi , Akinobu Shimada , Ai Satoyama , Yasutomo Yamamoto , Yoshiaki Eguchi
发明人： Hiroshi Ohno , Kouji Arai , Toshio Nakano , Hideo Tabuchi , Akinobu Shimada , Ai Satoyama , Yasutomo Yamamoto , Yoshiaki Eguchi
IPC分类号： G06F3/00
CPC分类号： G06F3/061 , G06F3/0607 , G06F3/0635 , G06F3/064 , G06F3/0659 , G06F3/0665 , G06F3/067 , G06F3/0689 , G06F12/0866 , G06F2212/312
摘要： A method for controlling a storage system including a host computer, and a first and a second storage control apparatuses each receiving a data input/output request from the host computer and executing a data input/output process for a storage device in response to the request, comprises connecting a first communication path between the host computer and the first apparatus; connecting a second communication path between the first apparatus and the second apparatus; receiving by the first apparatus a first data input/output request from the host computer through the first path; when the first apparatus has judged that the first request is not for the first apparatus, transmitting by the first apparatus a second data input/output request corresponding to the first request, to the second apparatus through the second path; and by the second apparatus, receiving the second request and executing a data input/output process corresponding to the second request received.
摘要翻译：一种用于控制包括主计算机和第一和第二存储控制装置的存储系统的方法，每个存储控制装置接收来自主计算机的数据输入/输出请求，并响应于该请求执行存储装置的数据输入/输出处理包括连接主计算机和第一装置之间的第一通信路径; 连接第一设备和第二设备之间的第二通信路径; 由第一装置接收通过第一路径从主机计算的第一数据输入/输出请求; 当第一装置判断第一请求不是针对第一装置时，由第一装置发送与第一请求相对应的第二数据输入/输出请求，通过第二路径发送给第二装置; 并且由第二装置接收第二请求并执行与接收到的第二请求对应的数据输入/输出处理。

65. 发明申请

US20080173506A1 Opening and closing mechanism with damper 审中-公开
标题翻译：带阻尼器的开闭机构
公开(公告)号：US20080173506A1
公开(公告)日：2008-07-24
申请号：US12007549
申请日：2008-01-11
申请人： Hiroshi Ohno , Nobutaka Yajima
发明人： Hiroshi Ohno , Nobutaka Yajima
IPC分类号： F16F9/14
CPC分类号： F16F9/145 , E05F5/00 , E05F5/10 , E05Y2201/21 , E05Y2201/256 , E05Y2201/266
摘要： An opening and closing member with a rotary damper for use in a western style stool or piano and the like which facilitates easy control of the rotary damper and easy assembly. Hinge members corresponding to an opening and closing member side are adjacently disposed at the same side of respective hinge members on a side of a proper member. The rotary damper having a particular directivity is disposed between hinge members facing each other. The opening and closing member is swivellably journalled on the proper member about an axis of rotation of the rotary dampers, and the damping power of the rotary damper is applied to the swiveling motion as the opening and closing member swivels with the rotary damper on its axis.
摘要翻译：具有用于西式凳子或钢琴等的旋转阻尼器的开闭构件，其易于控制旋转阻尼器并容易组装。对应于打开和关闭构件侧的铰链构件相邻地设置在适当构件侧的相应铰链构件的同一侧。具有特定方向性的旋转阻尼器设置在彼此面对的铰链构件之间。打开和关闭构件围绕旋转阻尼器的旋转轴线可旋转地安装在适当的构件上，并且当打开和关闭构件在旋转阻尼器的轴线上旋转时，旋转阻尼器的阻尼力被施加到旋转运动。

66. 发明授权

US07177991B2 Installation method of new storage system into a computer system 有权
标题翻译：将新存储系统安装到计算机系统中
公开(公告)号：US07177991B2
公开(公告)日：2007-02-13
申请号：US10636758
申请日：2003-08-08
申请人： Yasutomo Yamamoto , Yoshiaki Eguchi , Ai Satoyama , Hiroshi Ohno
发明人： Yasutomo Yamamoto , Yoshiaki Eguchi , Ai Satoyama , Hiroshi Ohno
IPC分类号： G06F12/00
CPC分类号： G06F3/0607 , G06F3/0604 , G06F3/0631 , G06F3/0632 , G06F3/0637 , G06F3/0647 , G06F3/067
摘要： A new storage unit is installed such that installation costs are suppressed and functions of the new storage unit can be utilized sufficiently. An access right is changed such that the new storage unit (second storage unit) can access an existing first storage unit (S502). A logical device relating to a storage device of the first storage unit is assigned to a logical device of the second storage unit (S503). Path definition and device recognition in a host computer are performed such that the host computer can access the assigned logical device of the second storage unit (S504, 505). Input-output setting of the host computer is changed such that processing of an input-output from the host computer to the device of the first storage unit is requested to the second storage unit (S506). Seleted figure: FIG. 5.
摘要翻译：安装新的存储单元，从而可以抑制安装成本，并且可以充分利用新的存储单元的功能。改变访问权限，使得新存储单元（第二存储单元）可以访问现有的第一存储单元（S 502）。与第一存储单元的存储装置相关的逻辑设备被分配给第二存储单元的逻辑设备（S 503）。执行主计算机中的路径定义和设备识别，使得主计算机可以访问第二存储单元的分配的逻辑设备（S 504,505）。更改主计算机的输入输出设置，使得向第二存储单元请求从主计算机到第一存储单元的设备的输入输出的处理（S 506）。分离图： 5 。

67. 发明授权

US07148149B2 Method for fabricating nitride-based compound semiconductor element 有权
标题翻译：氮化物系化合物半导体元件的制造方法
公开(公告)号：US07148149B2
公开(公告)日：2006-12-12
申请号：US11017681
申请日：2004-12-22
申请人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
发明人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/3081 , H01L21/30612 , H01L21/30621 , H01L21/30635 , H01L33/0075
摘要： A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer 13 on a base substrate 11; forming, on part of the upper surface of the nitride semiconductor layer 13, a conductive film 14 made of an electron emitting layer 14b and a dry etching mask layer 14a from bottom to top; performing dry etching on the nitride semiconductor layer 13; and performing wet etching on the nitride semiconductor layer 13 by emitting electrons from the nitride semiconductor layer 13 through the conductive film 14 to the outside.
摘要翻译：根据本发明的制造氮化物半导体元件的方法包括以下步骤：在基底基板11上形成氮化物半导体层13; 在氮化物半导体层13的上表面的一部分上形成从底部到顶部由电子发射层14b和干蚀刻掩模层14a形成的导电膜14; 在氮化物半导体层13上进行干蚀刻; 以及通过从氮化物半导体层13通过导电膜14向外部发射电子而在氮化物半导体层13上进行湿式蚀刻。

68. 发明申请

US20060168369A1 Method for controlling storage system, and storage control apparatus 有权
公开(公告)号：US20060168369A1
公开(公告)日：2006-07-27
申请号：US11338796
申请日：2006-01-25
申请人： Hiroshi Ohno , Kouji Arai , Toshio Nakano , Hideo Tabuchi , Akinobu Shimada , Ai Satoyama , Yasutomo Yamamoto , Yoshiaki Eguchi
发明人： Hiroshi Ohno , Kouji Arai , Toshio Nakano , Hideo Tabuchi , Akinobu Shimada , Ai Satoyama , Yasutomo Yamamoto , Yoshiaki Eguchi
IPC分类号： G06F3/06
CPC分类号： G06F3/061 , G06F3/0607 , G06F3/0635 , G06F3/064 , G06F3/0659 , G06F3/0665 , G06F3/067 , G06F3/0689 , G06F12/0866 , G06F2212/312
摘要： A method for controlling a storage system including a host computer, and a first and a second storage control apparatuses each receiving a data input/output request from the host computer and executing a data input/output process for a storage device in response to the request, comprises connecting a first communication path between the host computer and the first apparatus; connecting a second communication path between the first apparatus and the second apparatus; receiving by the first apparatus a first data input/output request from the host computer through the first path; when the first apparatus has judged that the first request is not for the first apparatus, transmitting by the first apparatus a second data input/output request corresponding to the first request, to the second apparatus through the second path; and by the second apparatus, receiving the second request and executing a data input/output process corresponding to the second request received.

69. 发明申请

US20060081429A1 Opening and closing mechanism with damper 审中-公开
标题翻译：带阻尼器的开闭机构
公开(公告)号：US20060081429A1
公开(公告)日：2006-04-20
申请号：US11237914
申请日：2005-09-29
申请人： Hiroshi Ohno , Nobutaka Yajima
发明人： Hiroshi Ohno , Nobutaka Yajima
IPC分类号： F16D57/00
CPC分类号： F16F9/145 , E05F5/00 , E05F5/10 , E05Y2201/21 , E05Y2201/256 , E05Y2201/266
摘要： An object of the present invention is to provide an opening and closing member with damper for use in Western style stool or piano and the like which facilitates an easy control of the rotary damper and easy execution of assembling work, and the hinge members corresponding to the opening and closing member side are adjacently disposed at the same side of the two pieces of the hinge members at the side of the proper member. The rotary damper having a directivity is disposed between the hinge members that face each other, and the mounting member at one side of the rotary damper is tied to the mounting member provided at the hinge member of the proper member, and the mounting member of the other side is tied to the mounting member provided at the hinge member of the opening and closing member. With this arrangement, the opening and closing member is swivellably journalled on the proper member with the rotary damper on its axis of rotation, and the damping power of the rotary damper is applied to the swivelling motion as the opening and closing member swivells with the rotary damper on its axis.
摘要翻译：本发明的目的是提供一种用于西式凳子或钢琴等的阻尼器的开闭构件，其易于控制旋转阻尼器并且容易执行组装作业，并且铰链构件对应于打开和关闭构件侧相邻地设置在两个铰链构件在适当构件侧的同一侧。具有指向性的旋转阻尼器设置在彼此相对的铰链构件之间，并且旋转阻尼器一侧的安装构件被连接到设置在适当构件的铰链构件上的安装构件，并且安装构件另一侧被连接到设置在开闭构件的铰链构件处的安装构件。利用这种布置，打开和关闭构件可旋转地安装在适当的构件上，其中旋转阻尼器在其旋转轴线上，并且当打开和关闭构件与旋转体一起旋转时，旋转阻尼器的阻尼力被施加到旋转运动阻尼器在其轴上。

70. 发明申请

US20050159000A1 Method for fabricating nitride-based compound semiconductor element 有权
标题翻译：氮化物系化合物半导体元件的制造方法
公开(公告)号：US20050159000A1
公开(公告)日：2005-07-21
申请号：US11017681
申请日：2004-12-22
申请人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
发明人： Hiroshi Ohno , Satoshi Tamura , Tetsuzo Ueda
IPC分类号： H01L21/306 , H01L21/3063 , H01L21/3065 , H01L21/308 , H01L33/00 , H01L21/302 , H01L21/461
CPC分类号： H01L21/3081 , H01L21/30612 , H01L21/30621 , H01L21/30635 , H01L33/0075
摘要： A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer 13 on a base substrate 11; forming, on part of the upper surface of the nitride semiconductor layer 13, a conductive film 14 made of an electron emitting layer 14b and a dry etching mask layer 14a from bottom to top; performing dry etching on the nitride semiconductor layer 13; and performing wet etching on the nitride semiconductor layer 13 by emitting electrons from the nitride semiconductor layer 13 through the conductive film 14 to the outside.
摘要翻译：根据本发明的制造氮化物半导体元件的方法包括以下步骤：在基底基板11上形成氮化物半导体层13; 在氮化物半导体层13的上表面的一部分上形成从底部到顶部由电子发射层14b和干蚀刻掩模层14a形成的导电膜14; 在氮化物半导体层13上进行干蚀刻; 以及通过从氮化物半导体层13通过导电膜14向外部发射电子而在氮化物半导体层13上进行湿式蚀刻。

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