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61. 发明授权

US07389359B2 Method and system for intelligently forwarding multicast packets 有权
标题翻译：智能转发组播报文的方法和系统
公开(公告)号：US07389359B2
公开(公告)日：2008-06-17
申请号：US09982106
申请日：2001-10-19
申请人： Nitin Jain , Lee Chen , Earl Ferguson , Min Zhu
发明人： Nitin Jain , Lee Chen , Earl Ferguson , Min Zhu
IPC分类号： G06F15/173
CPC分类号： H04L12/1886
摘要： A routing system utilizes a layer 2 switch interconnecting several routers to intelligently forward multicast packets throughout an internet exchange carrying multicast content. The layer 2 switch performs protocol snooping to extract a lookup key that is based on network layer protocol information. The lookup key is uniquely formulated to support either shared or explicit source distribution trees. The lookup key is used to query a forwarding memory that returns an outgoing port index. The outgoing port index points to one or more outgoing ports that are eligible to receive the multicast packet. The outgoing ports are also connected to the neighboring device(s) that are designated to receive the multicast packet. The routing system also supports real time maintenance and updating of the forwarding memory based on the periodic exchange of control messages. The routing system is configured to support PIM routers operating in PIM SM or PIM SSM modes. However, the routing system can also support other multicast protocols and/or standards.
摘要翻译：路由系统利用互连多个路由器的层2交换机来在承载多播内容的互联网交换机中智能地转发多播分组。第二层交换机执行协议侦听，提取基于网络层协议信息的查找密钥。查找密钥是独一无二的，用于支持共享或明确的源分发树。查询键用于查询返回出站端口索引的转发内存。出站端口索引指向一个或多个有资格接收组播数据包的输出端口。输出端口也连接到被指定为接收多播分组的相邻设备。路由系统还支持基于控制消息的周期性交换的转发存储器的实时维护和更新。路由系统配置为支持以PIM SM或PIM SSM模式运行的PIM路由器。然而，路由系统还可以支持其他多播协议和/或标准。

62. 发明申请

US20080135518A1 METHOD AND SYSTEM FOR UNIFORMITY CONTROL IN BALLISTIC ELECTRON BEAM ENHANCED PLASMA PROCESSING SYSTEM 有权
标题翻译：弹丸电子束加强等离子体处理系统的均匀控制方法与系统
公开(公告)号：US20080135518A1
公开(公告)日：2008-06-12
申请号：US11608889
申请日：2006-12-11
申请人： Lee Chen , Hiromasa Mochiki
发明人： Lee Chen , Hiromasa Mochiki
IPC分类号： C03C25/68 , C23C16/00 , H01L21/3065
CPC分类号： H01J37/32642 , H01J37/32091 , H01J37/321 , H01J37/3233 , H01J37/32587
摘要： A method and system for adjusting and controlling the plasma uniformity in a plasma processing system is described. The plasma processing system includes an electron source electrode to which direct current (DC) power is coupled in order to generate a ballistic electron beam during the etching of the substrate. A ring electrode, provided about a periphery of the substrate and opposite the electron source electrode, is utilized to create a ring hollow cathode plasma to affect changes in the distribution of plasma density.
摘要翻译：描述了用于调整和控制等离子体处理系统中的等离子体均匀性的方法和系统。等离子体处理系统包括电子源电极，直流电（DC）功率被耦合到其中，以便在衬底的蚀刻期间产生弹道电子束。利用设置在基板的周边并且与电子源电极相对的环形电极来产生环空心阴极等离子体，以影响等离子体密度分布的变化。

63. 发明申请

US20070187813A1 UV blocking and crack protecting passivation layer 有权
标题翻译： UV阻挡和裂纹保护钝化层
公开(公告)号：US20070187813A1
公开(公告)日：2007-08-16
申请号：US11352169
申请日：2006-02-10
申请人： Lee Chen , Shing Luo , Chin Su
发明人： Lee Chen , Shing Luo , Chin Su
IPC分类号： H01L23/053 , H01L23/12
CPC分类号： H01L23/3192 , H01L23/552 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprises a substrate, a patterned metal conductor layer over the substrate, and a passivation layer. The passivation layer may comprise a UV blocking, protection layer, over at least a portion of the substrate and patterned metal conductor layers, and a separation layer between the patterned metal conductor layer and the UV protection layer. The passivation layer may also comprise a gap-filling, hydrogen-blocking layer over the substrate, the patterned metal conductor layer and any UV protection layer.
摘要翻译：半导体器件包括衬底，衬底上的图案化金属导体层和钝化层。钝化层可以包括基底和图案化的金属导体层的至少一部分上的UV阻挡保护层，以及图案化的金属导体层和UV保护层之间的分离层。钝化层还可以包括在衬底上的间隙填充，阻氢层，图案化的金属导体层和任何UV保护层。

64. 发明申请

US20070155181A1 Method and system for etching high-k dielectric materials 有权
公开(公告)号：US20070155181A1
公开(公告)日：2007-07-05
申请号：US11713617
申请日：2007-03-05
申请人： Lee Chen , Audunn Ludviksson
发明人： Lee Chen , Audunn Ludviksson
IPC分类号： H01L21/465
CPC分类号： H01L21/28185 , H01L21/31116 , H01L21/31122 , H01L21/67069 , H01L21/67253 , H01L29/51 , H01L29/517
摘要： A system and a method to remove a layer of high-k dielectric material during the manufacturing of an integrated circuit. In one embodiment of the invention, an etch reactant is employed to form volatile etch products when reacted with high-k layers. Alternately, high-k layers can be anisotropically etched of in accordance with a patterned photoresist or hard mask, where a hyperthermal beam of neutral atoms is used to aid in the reaction of an etch reactant with a high-k layer. Alternately, a hyperthermal beam of neutral atoms or a plasma treatment can used to modify a high-k layer, and subsequently etch the modified high-k layer utilizing an etch reactant that reacts with the modified high-k layer. In still another embodiment of the invention, the hyperthermal beam of neutral atoms is used to etch a high-k layer through physical bombardment of the high-k layer.

65. 发明授权

US07214327B2 Anisotropic dry etching of Cu-containing layers 失效
标题翻译：含Cu层的各向异性干蚀刻
公开(公告)号：US07214327B2
公开(公告)日：2007-05-08
申请号：US10517764
申请日：2003-06-27
申请人： Lee Chen , Audunn Ludviksson
发明人： Lee Chen , Audunn Ludviksson
IPC分类号： C23F1/02
CPC分类号： C23F1/12 , B81C1/00492 , B81C2201/0143 , C23F4/00 , H01L21/32135 , H01L21/32136 , H01L21/76838
摘要： A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that react with the oxidized Cu (360) to form volatile Cu-containing etch products (390). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist (230, 330).
摘要翻译：用于干蚀刻用于制造集成电路的纯Cu和Cu层（220,310）的方法和装置。本发明使用具有高动能（340）的O原子的定向光束氧化含Cu和Cu的层，以及与氧化的Cu（360）反应形成挥发性含Cu蚀刻产物的蚀刻试剂（370）（390）。本发明允许根据图案化的硬掩模或光致抗蚀剂（230,330）对纯Cu和Cu层进行低温，各向异性蚀刻。

66. 发明申请

US20070069118A1 Hyperthermal neutral beam source and method of operating 有权
标题翻译：超热中性束源及其操作方法
公开(公告)号：US20070069118A1
公开(公告)日：2007-03-29
申请号：US11238191
申请日：2005-09-29
申请人： Demetre Economou , Lee Chen , Vincent Donnelly
发明人： Demetre Economou , Lee Chen , Vincent Donnelly
IPC分类号： H05H3/02
CPC分类号： H05H3/02 , H01J37/32357 , H01J37/32422 , H01J37/3244 , H01J37/32449 , H01J37/32834
摘要： Method and system for pumping a hyperthermal neutral beam source is described. The pumping system enables use of the hyperthermal neutral beam source for semiconductor processing applications, such as etching processes. An embodiment is described having a neutral beam source coupled to a processing chamber through a neutralizing grid. Control is provided by separately pumping the neutral beam source and the processing chamber.
摘要翻译：描述了用于泵送超热中性束源的方法和系统。泵送系统能够使用超热中性束源用于半导体处理应用，例如蚀刻工艺。描述了具有通过中和网格耦合到处理室的中性束源的实施例。通过分别泵送中性束源和处理室来提供控制。

67. 发明申请

US20070024146A1 Single-phase motor and stator winding method thereof 审中-公开
标题翻译：单相电动机和定子绕组方法
公开(公告)号：US20070024146A1
公开(公告)日：2007-02-01
申请号：US11489597
申请日：2006-07-20
申请人： Shih Huang , Kun Lee , Lee Chen , Wen-Shi Huang
发明人： Shih Huang , Kun Lee , Lee Chen , Wen-Shi Huang
IPC分类号： H02K1/00 , H02K23/02 , H02K15/00
CPC分类号： H02K3/28 , H02K15/095 , Y10T29/49009 , Y10T29/49073
摘要： A winding method of a motor stator comprises the steps of serially winding a wire on a plurality of odd poles along a first direction; pulling out a common terminal from the wire to serve as a first power terminal; serially winding the wire on a plurality of even poles along a second direction; and knotting a start and an end of the wire to form a second power terminal. A single-phase motor comprises a stator and a rotor. The stator has a plurality of poles and a wire, and the rotor cooperates with the stator. The wire serially winds odd poles of the plurality of poles along a first direction and then serially winds even poles of the plurality of poles along a second direction.
摘要翻译：电动机定子的绕线方法包括沿着第一方向将线串联地缠绕在多个奇数极上的步骤; 从电线拔出公共端子作为第一个电源端子; 沿着第二方向将线串联缠绕在多个偶极上; 并打结线的开始和结束以形成第二电源终端。单相电动机包括定子和转子。定子具有多个极和线，并且转子与定子配合。线沿着第一方向串联地缠绕多个极的奇数极，然后沿着第二方向串联多个极的偶极。

68. 发明申请

US20050224456A1 Anisotropic dry etching of cu-containing layers 失效
标题翻译：含Cu层的各向异性干蚀刻
公开(公告)号：US20050224456A1
公开(公告)日：2005-10-13
申请号：US10517764
申请日：2003-06-27
申请人： Lee Chen , Audunn Ludviksson
发明人： Lee Chen , Audunn Ludviksson
IPC分类号： B44C1/22 , B81C1/00 , C23F1/00 , C23F1/12 , C23F4/00 , H01L21/3213 , H01L21/768
CPC分类号： C23F1/12 , B81C1/00492 , B81C2201/0143 , C23F4/00 , H01L21/32135 , H01L21/32136 , H01L21/76838
摘要： A method and apparatus for dry etching pure Cu and Cu-containing layers (220, 310) for manufacturing integrated circuits. The invention uses a directional beam of O-atoms with high kinetic energy (340) to oxidize the Cu and Cu-containing layers, and etching reagents (370) that react with the oxidized Cu (360) to form volatile Cu-containing etch products (390). The invention allows for low-temperature, anisotropic etching of pure Cu and Cu-containing layers in accordance with a patterned hard mask or photoresist (230, 330).
摘要翻译：用于干蚀刻用于制造集成电路的纯Cu和Cu层（220,310）的方法和装置。本发明使用具有高动能（340）的O原子的定向光束氧化含Cu和Cu的层，以及与氧化的Cu（360）反应形成挥发性含Cu蚀刻产物的蚀刻试剂（370）（390）。本发明允许根据图案化的硬掩模或光致抗蚀剂（230,330）对纯Cu和Cu层进行低温，各向异性蚀刻。

69. 发明申请

US20050120960A1 Substrate holder for plasma processing 审中-公开
标题翻译：用于等离子体处理的基板支架
公开(公告)号：US20050120960A1
公开(公告)日：2005-06-09
申请号：US10506237
申请日：2003-03-11
申请人： Lee Chen
发明人： Lee Chen
IPC分类号： H05H1/46 , C23C16/00 , H01J37/20 , H01L21/00 , H01L21/3065 , H01L21/31 , H01L21/683 , H01L21/687
CPC分类号： H01L21/67248 , H01J37/20 , H01J37/32522 , H01J37/32642 , H01J2237/2001 , H01L21/67069 , H01L21/6831 , H01L21/68735
摘要： An improved substrate holder comprises an electrode supporting a focus ring and a substrate, an insulating member surrounding the electrode and focus ring, a ground member surrounding the insulating member, and a focus ring surrounding the substrate. The focus ring provides a RF impedance substantially equivalent to a RF impedance of the substrate. A method of processing a substrate utilizing the improved substrate holder reduces arcing between the edge of the substrate and the focus ring. The method comprises the steps of placing the focus ring on the electrode, placing the substrate on the electrode and processing the substrate. Additionally, a method of controlling a focus ring temperature and a substrate temperature utilizing the improved substrate holder comprises the steps of placing the focus ring on the electrode, placing the substrate on the electrode, clamping the focus ring and the substrate to the electrode using an electrostatic clamp, supplying heat transfer gas(es) to the space residing between the focus ring and the electrode, and the space between the substrate and the electrode, and controlling the temperature of the electrode.
摘要翻译：改进的衬底保持器包括支撑聚焦环和衬底的电极，围绕电极和聚焦环的绝缘构件，围绕绝缘构件的接地构件和围绕衬底的聚焦环。聚焦环提供基本上等于衬底的RF阻抗的RF阻抗。利用改进的基板保持器处理基板的方法减少了基板的边缘和聚焦环之间的电弧。该方法包括以下步骤：将聚焦环放置在电极上，将衬底放置在电极上并处理衬底。此外，利用改进的衬底保持器来控制聚焦环温度和衬底温度的方法包括以下步骤：将聚焦环放置在电极上，将衬底放置在电极上，将聚焦环和衬底夹持到电极上，使用将静电夹持器，向聚焦环和电极之间的空间供给传热气体，以及衬底和电极之间的空间，以及控制电极的温度。

70. 发明申请

US20050118353A1 Method and system for etching a high-k dielectric material 审中-公开
标题翻译：蚀刻高k电介质材料的方法和系统
公开(公告)号：US20050118353A1
公开(公告)日：2005-06-02
申请号：US10853026
申请日：2004-05-25
申请人： Lee Chen , Hiromitsu Kambara , Nobuhiro Iwama
发明人： Lee Chen , Hiromitsu Kambara , Nobuhiro Iwama
IPC分类号： H01L21/00 , H01L21/311 , H01L21/324 , H01L21/336 , H01L21/461 , H05H1/24
CPC分类号： H01L21/31122
摘要： A method for heating a substrate between a first process and a second process using a plasma is described. The heating method comprises thermally isolating the substrate on the substrate holder by removing the backside supply of a heat transfer gas and removing the clamping force. Furthermore, an inert gas, such as a Noble gas, is introduced to the plasma processing system and a plasma is ignited. The substrate is exposed to the inert plasma for a period of time sufficient to elevate the temperature of the substrate from a first temperature (i.e., typically less than 100° C.) to a second temperature (i.e., typically of order 400° C.).
摘要翻译：描述了使用等离子体在第一工艺和第二工艺之间加热衬底的方法。加热方法包括通过去除传热气体的背面供应并去除夹紧力来热隔离衬底保持器上的衬底。此外，诸如Noble气体的惰性气体被引入到等离子体处理系统中，并且等离子体被点燃。将衬底暴露于惰性等离子体一段足以将衬底的温度从第一温度（即通常小于100℃）提升至第二温度的时间（即典型地为400℃））。

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