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    • 61. 发明授权
    • Heterostructure semiconductor device having a top layer etched to form a
groove to enable electrical contact with the lower layer
    • 异质结构半导体器件具有被蚀刻以形成凹槽的顶层以能够与下层电接触
    • US4255755A
    • 1981-03-10
    • US968924
    • 1978-12-13
    • Kunio ItohMorio Inoue
    • Kunio ItohMorio Inoue
    • H01L21/00H01L23/485H01L29/00H01L29/872H01L33/00H01L29/06H01L29/80
    • H01L29/00H01L21/00H01L23/485H01L29/872H01L33/00H01L2924/0002
    • A semiconductor laser is made by sequential liquid-phase epitaxial growths on an n-type GaAs substrate, thereby sequentially forminga first layer of n-type GaAlAs,a second layer of n-type or p-type GaAs as active region,a third layer of p-type GaAlAs,said first to third layers forming a doublehetero structure,a fourth layer of p.sup.+ -type GaAs, anda fifth layer of n-type GaAlAs,by chemically etching the fifth layer, to form a groove or narrow window therein so as to expose a part of said fourth layer at the bottom of the groove, andby providing a metal electrode embedded in said groove.In the laser of the abovementioned construction, the fifth layer, instead of the conventional oxide film, serves as an isolation layer. However, the fifth layer, being an epitaxially grown GaAlAs layer, has better thermal conductivity than an oxide film. Therefore, when a suitable heat-sink means or heat-radiation means is provided thereon, a laser of good heat radiation characteristics is obtainable, enabling production of higher power continuous wave laser.The etching for forming the groove is easily made by chemically etching the desired layer by utilizing the difference in etching speed for different layers of hetero structure.
    • 半导体激光器通过在n型GaAs衬底上的顺序的液相外延生长制成,从而顺序地形成第一层n型GaAlAs,第二层n型或p型GaAs作为有源区,第三层 p型GaAlAs层,所述第一至第三层形成双重结构,第四层p +型GaAs和第五层n型GaAlAs,通过化学蚀刻第五层以形成凹槽或窄窗口 以便在槽的底部露出所述第四层的一部分,并且通过设置嵌入在所述槽中的金属电极。 在上述结构的激光器中,代替常规氧化膜的第五层用作隔离层。 然而,作为外延生长的GaAlAs层的第五层比氧化膜具有更好的热导率。 因此,当在其上设置合适的散热装置或热辐射装置时,可以获得具有良好散热特性的激光器,从而能够生产更高功率的连续波激光器。 通过利用异质结构的不同层的蚀刻速度的差异,通过化学蚀刻所需层来容易地形成用于形成凹槽的蚀刻。
    • 62. 发明授权
    • Silicon-containing polybutadiene derivatives and method for the
preparation thereof
    • 含硅聚丁二烯衍生物及其制备方法
    • US4230815A
    • 1980-10-28
    • US926298
    • 1978-07-20
    • Kunio ItohKimitaka Kumagae
    • Kunio ItohKimitaka Kumagae
    • C08F8/00C08C19/25C08F8/42
    • C08C19/25
    • Novel silicon-containing derivatives of polybutadiene or copolymers of butadiene with other copolymerizable monomer or monomers in which organosilicon-containing groups are bonded to the carbon atoms in the main chain of the butadiene polymers through the carbon-silicon linkages. These derivatives of butadiene polymers are produced by the addition reaction of an organosilicon compound having one hydrogen atom directly bonded to the silicon atom in the molecule to the double bonds in the butadiene polymers. They have a good fluidity, a small temperature dependency of viscosity, an excellent thermal stability and a high anti-oxidation resistance, as well as a good compatibility with siliceous fillers which are added to give improved workability and transparency to the compositions. The compositions to which a crosslinking agent and a curing catalyst are added can be cured into a rubber-like elastomer having excellent properties suitable for applications in various fields.
    • 聚丁二烯的新型含硅衍生物或丁二烯与其它可共聚单体或单体的共聚物,其中含有机硅的基团通过碳 - 硅键连接到丁二烯聚合物主链中的碳原子上。 丁二烯聚合物的这些衍生物通过具有一个与分子中的硅原子直接键合的氢原子的有机硅化合物与丁二烯聚合物中的双键进行加成反应来制备。 它们具有良好的流动性,较小的粘度温度依赖性,优异的热稳定性和高的抗氧化性,以及与添加以提供组合物改进的可加工性和透明度的硅质填料的良好相容性。 加入交联剂和固化催化剂的组合物可以固化成具有优异性能的橡胶状弹性体,适用于各种领域。
    • 64. 发明授权
    • Solidstate light-emitting device
    • 固态发光装置
    • US4149175A
    • 1979-04-10
    • US873522
    • 1978-01-30
    • Morio InoueKunio ItohKunihiko Asahi
    • Morio InoueKunio ItohKunihiko Asahi
    • H01L33/14H01S5/223H01L33/00H01S3/19
    • H01S5/2232H01L33/145Y10S148/084
    • A mesa region of a stripe geometry is formed by mesa-etching a surface of a GaAs crystal substrate, forming a crystal layer of higher resistivity than the abovementioned crystal substrate so as to fill the abovementioned mesa-etched recesses in a manner that the stripe shaped mesa region is buried in the higher resistivity regions making top faces of the mesa region and the higher resistivity regions flush with each other, then forming, on the abovementioned flush surface, several epitaxial growth regions of semiconductor crystal including a light emitting region, for instance, an active region for lasing, subsequently forming contact isolation region having an opening of the stripe geometry corresponding to and above said mesa region. The current flow in the active region is confined in a narrow stripe region.
    • 通过对GaAs晶体基板的表面进行台面蚀刻来形成条纹几何形状的台面区域,形成比上述晶体基板更高的电阻率的晶体层,以便填充上述台面蚀刻的凹部,使得条状 台面区域被埋在较高电阻率区域中,使得台面区域的顶面和较高电阻率区域彼此齐平,然后在上述冲洗表面上形成包括发光区域的半导体晶体的几个外延生长区域,例如 ,用于激光的有源区,随后形成具有对应于所述台面区域和之上的条纹几何形状的开口的接触隔离区域。 有源区域中的电流限制在窄条纹区域中。
    • 67. 发明授权
    • Semiconductor device and optical pickup device
    • 半导体器件和光学拾取器件
    • US06810057B1
    • 2004-10-26
    • US09718568
    • 2000-11-22
    • Kunio ItohNobuyuki UemuraMasaaki Yuri
    • Kunio ItohNobuyuki UemuraMasaaki Yuri
    • H01S500
    • G11B7/1362G11B7/123G11B7/22G11B2007/0006H01S5/02236H01S5/02248H01S5/02292H01S5/4012
    • A semiconductor device having a plurality of semiconductor laser elements is provided, which is capable of reducing an interval of emission points between the semiconductor laser elements and also capable of preventing heat generated by a semiconductor laser element from affecting other semiconductor elements. A concave portion is formed on a silicon substrate, and a protrusion of a quadrangular truncated pyramidal shape consisting of slanted faces of a (1 1 1) plane, a (1 {overscore (1)} 1) plane, a ({overscore (1)} {overscore (1)} 1) plane and a ({overscore (1)} 1 1) plane is formed near the center of the concave portion by using the silicon process. Among these slanted faces, a (1 1 1) outer face and a (1 1 1) inner face are determined to be reflecting mirror surfaces. The semiconductor laser elements respectively are fixed on small protrusions formed on the concave portion, and a photodetector for receiving light beams L1′ and L2′ returning from an optical disc is disposed on a top face of the protrusion.
    • 提供具有多个半导体激光元件的半导体器件,其能够减小半导体激光元件之间的发射点的间隔,并且还能够防止由半导体激光元件产生的热量影响其他半导体元件。 在硅衬底上形成凹部,并且由(111)面,((过(1)面),((超(1)面) 通过使用硅工艺在凹部的中心附近形成超芯(11)面和(超(11)面),在这些倾斜面中,(1111)外表面和(11 1)内表面被确定为反射镜表面,半导体激光元件分别固定在形成在凹部上的小突起上,并且用于接收从光盘返回的光束L1'和L2'的光电检测器设置在顶部 突起面。