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61. 发明授权

US08248819B2 Chip card holder for portable electronic device 失效
标题翻译：便携式电子设备的芯片卡座
公开(公告)号：US08248819B2
公开(公告)日：2012-08-21
申请号：US12768699
申请日：2010-04-27
申请人： You Wang
发明人： You Wang
IPC分类号： H05K7/14 , H05K7/18
CPC分类号： H04B1/3818 , H04B1/3816 , H05K7/1408
摘要： A chip card holder includes a main housing and a retaining cover. The main housing includes a chip card receiving portion for receiving a chip card. The main housing defines a slot adjacent to the chip card receiving portion. A locking portion is formed adjacent to the slot. The retaining cover is rotatably attached the main housing. The retaining cover includes a latching portion. The latching portion includes an angled bottom. The retaining cover is locked to the main housing by engagement of the locking portion and the latching portion, and the angled bottom of the latching portion is received in the slot.
摘要翻译：芯片卡座包括主壳体和保持盖。主壳体包括用于接收芯片卡的芯片卡接收部分。主壳体限定与芯片卡接收部分相邻的槽。锁定部分邻近狭槽形成。保持盖可旋转地安装在主壳体上。保持盖包括闩锁部分。闩锁部分包括成角度的底部。通过锁定部分和闩锁部分的接合将保持盖锁定到主壳体，并且闩锁部分的倾斜的底部被容纳在狭槽中。

62. 发明申请

US20090120799A1 MULTIPLE-STEP ELECTRODEPOSITION PROCESS FOR DIRECT COPPER PLATING ON BARRIER METALS 审中-公开
标题翻译：用于直接镀铜的多级电沉积工艺
公开(公告)号：US20090120799A1
公开(公告)日：2009-05-14
申请号：US12332882
申请日：2008-12-11
申请人： Zhi-Wen Sun , Renren He , You Wang , Michael X. Yang
发明人： Zhi-Wen Sun , Renren He , You Wang , Michael X. Yang
IPC分类号： C25D3/38 , C25D5/50
CPC分类号： H01L21/76864 , C25D3/38 , C25D5/10 , C25D7/123 , H01L21/2885 , H01L21/76868 , H01L21/76873 , H01L21/76877
摘要： Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.
摘要翻译：本发明的实施方案教导了一种将铜籽晶层沉积到基底表面的方法，通常为阻挡层。该方法包括将基板表面放置在铜溶液中，其中铜溶液包括络合的铜离子。在衬底表面上施加电流或偏压，还原络合的铜离子以将铜籽晶层沉积到阻挡层上。

63. 发明申请

US20080273564A1 Semiconductor Laser Element and Semiconductor Laser Element Array 审中-公开
标题翻译：半导体激光元件和半导体激光元件阵列
公开(公告)号：US20080273564A1
公开(公告)日：2008-11-06
申请号：US11662600
申请日：2005-09-13
申请人： You Wang , Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
发明人： You Wang , Hirofumi Miyajima , Akiyoshi Watanabe , Hirofumi Kan
IPC分类号： H01S5/026
CPC分类号： H01S5/10 , H01S5/0655 , H01S5/101 , H01S5/1085 , H01S5/4031
摘要： A semiconductor laser device 3 includes an n-type clad layer 13, an active layer 15, and a p-type clad layer 17. The p-type clad layer 17 has a ridge portion 9 that forms a waveguide 4 in the active layer 15. The waveguide 4 extends along a central axial line B that is curved at a substantially constant curvature (curvature radius R). In such a waveguide 4, of the light components that resonate inside the waveguide 4, light components of higher spatial transverse mode order are greater in loss. Laser oscillations of high-order transverse modes can thus be suppressed while maintaining laser oscillations of low-order transverse modes. A semiconductor laser device and a semiconductor laser device array, which can emit laser light of comparatively high intensity and with which high-order transverse modes can be suppressed, are thereby realized.
摘要翻译：半导体激光器件3包括n型覆盖层13，有源层15和p型覆盖层17。 p型覆盖层17具有在有源层15中形成波导4的脊部9。波导4沿着基本上恒定曲率（曲率半径R）弯曲的中心轴线B延伸。在这样的波导管4中，在波导4内谐振的光分量中，空间横向模式次序的光分量的损耗更大。因此可以抑制高阶横模的激光振荡，同时保持低阶横模的激光振荡。由此，可以实现能够发出较高强度的高光束和可以抑制高阶横模的半导体激光器件和半导体激光器件阵列。

64. 发明申请

US20070153453A1 Fully conductive pad for electrochemical mechanical processing 审中-公开
标题翻译：全导电垫用于电化学机械加工
公开(公告)号：US20070153453A1
公开(公告)日：2007-07-05
申请号：US11327527
申请日：2006-01-05
申请人： You Wang , Renhe Jia , Stan Tsai , Yongqi Hu , Zhihong Wang , Jie Diao , Gerald Alonzo
发明人： You Wang , Renhe Jia , Stan Tsai , Yongqi Hu , Zhihong Wang , Jie Diao , Gerald Alonzo
IPC分类号： H05K5/00 , H05K3/10
CPC分类号： C25F7/00 , B23H5/08 , B24B37/20 , Y10T29/49155 , Y10T29/49156
摘要： Embodiments of a pad assembly for processing a substrate are provided. The pad assembly includes a plurality of discrete members and a plurality of apertures. Each of the plurality of discrete members include a first conductive layer and a second conductive layer, with an isolation layer therebetween, and a recess for byproduct accumulation. The second conductive layer comprises a plurality of reaction surfaces that are orthogonal to the upper and lower surfaces of the pad assembly.
摘要翻译：提供了用于处理基板的垫组件的实施例。垫组件包括多个分立构件和多个孔。多个离散构件中的每一个包括第一导电层和第二导电层，其间具有隔离层，以及用于副产物积累的凹部。第二导电层包括与焊盘组件的上表面和下表面正交的多个反应表面。

65. 发明申请

US20070079936A1 Bonded multi-layer RF window 审中-公开
标题翻译：保税多层射频窗口
公开(公告)号：US20070079936A1
公开(公告)日：2007-04-12
申请号：US11445559
申请日：2006-06-02
申请人： Maocheng Li , John Holland , Patrick Leahey , Xueyu Qian , Michael Barnes , Jon Clinton , You Wang , Nianci Han
发明人： Maocheng Li , John Holland , Patrick Leahey , Xueyu Qian , Michael Barnes , Jon Clinton , You Wang , Nianci Han
IPC分类号： B31B1/60 , C23F1/00 , C23C16/00
CPC分类号： H01P1/08 , B32B2315/02 , C04B35/63452 , C04B37/003 , C04B37/005 , C04B37/008 , C04B2237/10 , C04B2237/34 , C04B2237/341 , C04B2237/343 , C04B2237/708 , H01J37/32082 , Y10T156/10
摘要： A bonded multi-layer RF window may include an external layer of dielectric material having desired thermal properties, an internal layer of dielectric material exposed to plasma inside a reaction chamber, and an intermediate layer of bonding material between the external layer and the internal layer. Heat produced by the chemical reaction inside the chamber and by the transmission of RF energy through the window may be conducted from the internal layer to the external layer, which may be cooled during a semiconductor wafer manufacturing process. A bonded multi-layer RF window may include cooling conduits for circulating coolant to facilitate cooling of the internal layer; additionally or alternatively, gas distribution conduits and gas injection apertures may be included for delivering one or more process gases into a reaction chamber. A system including a plasma reaction chamber may employ the inventive bonded multi-layer RF window.
摘要翻译：键合的多层RF窗可以包括具有期望的热性质的外部介电材料层，暴露于反应室内的等离子体的介电材料的内部层，以及外层和内层之间的接合材料的中间层。通过室内的化学反应和通过窗口的RF能量传递产生的热量可以从内层传导到外层，其可在半导体晶片制造过程中被冷却。粘合的多层RF窗可以包括用于循环冷却剂以便于冷却内层的冷却管道; 另外或替代地，可以包括气体分配管道和气体注入孔，用于将一个或多个处理气体输送到反应室中。包括等离子体反应室的系统可以采用本发明的结合的多层RF窗口。

66. 发明申请

US20070062815A1 METHOD FOR STABILIZED POLISHING PROCESS 审中-公开
标题翻译：用于稳定抛光过程的方法
公开(公告)号：US20070062815A1
公开(公告)日：2007-03-22
申请号：US11532258
申请日：2006-09-15
申请人： Renhe Jia , Jie Diao , Stan Tsai , You Wang , Laksh Karuppiah
发明人： Renhe Jia , Jie Diao , Stan Tsai , You Wang , Laksh Karuppiah
IPC分类号： C25C1/22
CPC分类号： B23H5/08 , C25D5/18 , C25F3/00 , C25F3/02 , C25F7/00 , H01L21/32125
摘要： A method for electrochemically processing a substrate is provided. In one embodiment, a method for electrochemically processing a substrate includes processing a substrate using a multi-step routine that includes a first processing period performed using a varying voltage to achieve a target removal current followed by a second processing period performed using a constant voltage.
摘要翻译：提供了一种用于电化学处理衬底的方法。在一个实施例中，用于电化学处理衬底的方法包括使用包括使用变化电压执行的第一处理周期的多步骤例程来处理衬底，以实现目标去除电流，接着是使用恒定电压执行的第二处理周期。

67. 发明申请

US20050284751A1 Electrochemical plating cell with a counter electrode in an isolated anolyte compartment 审中-公开
标题翻译：在隔离的阳极电解液室中具有对电极的电化学电镀槽
公开(公告)号：US20050284751A1
公开(公告)日：2005-12-29
申请号：US10880103
申请日：2004-06-28
申请人： Nicolay Kovarsky , Anzhong Chang , Saravjeet Singh , You Wang , John Dukovic
发明人： Nicolay Kovarsky , Anzhong Chang , Saravjeet Singh , You Wang , John Dukovic
IPC分类号： C25B9/08 , C25D7/12 , C25D17/00 , H01L21/288 , H01L21/768
CPC分类号： H01L21/2885 , C25D7/123 , C25D17/001 , C25D17/002 , C25D21/22 , H01L21/76843 , H01L21/76873 , H01L21/76877
摘要： A fluid processing cell for depositing a conductive layer onto a substrate is provided. The cell includes a catholyte solution fluid volume positioned to receive a substrate for plating, a first anolyte solution fluid volume at least partially ionically separated from the catholyte solution fluid volume, an anode assembly positioned in the first anolyte solution fluid volume, a second anolyte solution fluid volume, the second anolyte solution fluid volume being electrically isolated from the first anode solution fluid volume and at least partially in ionic communication with the cathode solution fluid volume, and a cathode counter electrode positioned in the second anolyte solution volume.
摘要翻译：提供了一种用于将导电层沉积到基底上的流体处理池。电池包括定位成接收用于电镀的衬底的阴极电解液溶液体积，至少部分与阴极电解液溶液体积离子地分离的第一阳极电解液溶液体积，位于第一阳极电解液溶液体积中的阳极组件，第二阳极电解液流体体积，第二阳极电解液溶液体积与第一阳极溶液流体体积电隔离并且至少部分地与阴极溶液流体体积离子连通，以及位于第二阳极电解液体积中的阴极对电极。

68. 发明申请

US20050006245A1 Multiple-step electrodeposition process for direct copper plating on barrier metals 审中-公开
标题翻译：用于在阻挡金属上直接镀铜的多步电沉积工艺
公开(公告)号：US20050006245A1
公开(公告)日：2005-01-13
申请号：US10616097
申请日：2003-07-08
申请人： Zhi-Wen Sun , Renren He , You Wang , Michael Yang
发明人： Zhi-Wen Sun , Renren He , You Wang , Michael Yang
IPC分类号： C25D3/38 , C25D5/10 , C25D7/12 , H01L21/288 , H01L21/768 , C25D5/02
CPC分类号： H01L21/76864 , C25D3/38 , C25D5/10 , C25D7/123 , H01L21/2885 , H01L21/76868 , H01L21/76873 , H01L21/76877
摘要： Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.
摘要翻译：本发明的实施方案教导了一种将铜籽晶层沉积到基底表面的方法，通常为阻挡层。该方法包括将基板表面放置在铜溶液中，其中铜溶液包括络合的铜离子。在衬底表面上施加电流或偏压，还原络合的铜离子以将铜籽晶层沉积到阻挡层上。

69. 发明授权

US06723674B2 Multi-component ceramic compositions and method of manufacture thereof 失效
标题翻译：多组分陶瓷组合物及其制造方法
公开(公告)号：US06723674B2
公开(公告)日：2004-04-20
申请号：US09960219
申请日：2001-09-21
申请人： Donald M. Wang , You Wang , Tongsan D. Xiao
发明人： Donald M. Wang , You Wang , Tongsan D. Xiao
IPC分类号： C04B35106
CPC分类号： C04B35/117 , B82Y30/00 , C04B35/12 , C04B35/6264 , C04B35/62645 , C04B35/62655 , C04B2235/3217 , C04B2235/3229 , C04B2235/3232 , C04B2235/3241 , C04B2235/3246 , C04B2235/528 , C04B2235/5445 , C04B2235/5454 , C04B2235/549 , C23C4/11 , C23C30/00 , Y02T50/67
摘要： A microstructured or nanostructured multi-component ceramic comprises (a) a major ceramic phase comprising a ceramic oxide composite; (b) a ceramic oxide additive; and (c) a rare earth ceramic oxide additive, wherein the total of the additives (b) and (c) comprise from about 0.1 weight percent to less than 50 weight percent based on the total weight the multi-component ceramic composite. In another embodiment, a microstructured or nanostructured multi-component ceramic comprises (a) a major ceramic oxide phase comprising a ceramic oxide composite; and either (b) a ceramic oxide additive or (c) a rare earth ceramic oxide additive, wherein amount of the additive (b) or (c) comprises from about 0.1 weight percent to less than 50 weight percent based on the total weight the multi-component ceramic composite. Such ceramics are useful as bulk materials or as feedstocks for thermal spray.
摘要翻译：微结构或纳米结构的多组分陶瓷包括（a）包含陶瓷氧化物复合材料的主要陶瓷相; （b）陶瓷氧化物添加剂; 和（c）稀土类陶瓷氧化物添加剂，其中所述添加剂（b）和（c）的总量占所述多组分陶瓷复合材料的总重量的约0.1重量％至小于50重量％。在另一个实施方案中，微结构或纳米结构的多组分陶瓷包括（a）包含陶瓷氧化物复合材料的主要陶瓷氧化物相; 和（b）陶瓷氧化物添加剂或（c）稀土陶瓷氧化物添加剂，其中添加剂（b）或（c）的量占总重量的约0.1重量％至小于50重量％多组分陶瓷复合材料。这种陶瓷作为散装材料或用于热喷涂的原料是有用的。

70. 发明授权

US06652991B1 Ductile NiAl intermetallic compositions 失效
标题翻译：延性NiAl金属间化合物
公开(公告)号：US06652991B1
公开(公告)日：2003-11-25
申请号：US10267261
申请日：2002-10-09
申请人： You Wang , Weixing Chen
发明人： You Wang , Weixing Chen
IPC分类号： B32B1501
CPC分类号： C22C30/00 , B32B15/012 , B32B15/013 , Y10S428/926 , Y10S428/935 , Y10S428/937 , Y10S428/938 , Y10S428/94 , Y10T428/1275 , Y10T428/12757 , Y10T428/12931 , Y10T428/12937 , Y10T428/12944 , Y10T428/12951 , Y10T428/12958 , Y10T428/12979
摘要： The addition of small amounts of CeO2 and Cr to intermetallic compositions of NiAl and FeAl improves ductility, thermal stability, thermal shock resistance, and resistance to oxidation, sulphidization and carburization.
摘要翻译：对NiAl和FeAl的金属间化合物添加少量的CeO 2和Cr可以提高延展性，热稳定性，耐热冲击性，耐氧化，硫化和渗碳。

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