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61. 发明申请

US20090059443A1 Magnetoresistive element including insulating film touching periphery of spacer layer 有权
标题翻译：磁阻元件包括接触间隔层周边的绝缘膜
公开(公告)号：US20090059443A1
公开(公告)日：2009-03-05
申请号：US11892771
申请日：2007-08-27
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara , Daisuke Miyauchi , Takahiko Machita
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996
摘要： An MR element includes a stack of layers including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The stack of layers has an outer surface, and the spacer layer has a periphery located in the outer surface of the stack of layers. The magnetoresistive element further includes an insulating film that touches the periphery of the spacer layer. The spacer layer includes a layer made of an oxide semiconductor composed of an oxide of a first metal. The insulating film includes a contact film that touches the periphery of the spacer layer and that is made of an oxide of a second metal having a Pauling electronegativity lower than that of the first metal by 0.1 or more.
摘要翻译： MR元件包括一叠层，包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层。层叠层具有外表面，并且间隔层具有位于层叠层的外表面中的周边。磁阻元件还包括接触间隔层的周边的绝缘膜。间隔层包括由第一金属的氧化物构成的氧化物半导体层。绝缘膜包括接触间隔层的周边的接触膜，并且由具有低于第一金属的Pauling电负性的第二金属的氧化物制成的接触膜为0.1以上。

62. 发明申请

US20090002893A1 MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP STRUCTURE, AND MAGNETIC DISK SYSTEM 有权
标题翻译： CPP结构和磁盘系统的磁阻效应器件
公开(公告)号：US20090002893A1
公开(公告)日：2009-01-01
申请号：US11768435
申请日：2007-06-26
申请人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
发明人： Yoshihiro Tsuchiya , Tomohito Mizuno , Shinji Hara
IPC分类号： G11B5/33 , G11B5/147 , G11B5/48
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3967 , H01L43/10
摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the free layer functions such that the direction of magnetization changes depending on an external magnetic field, and the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of zinc oxide, tin oxide, indium oxide, and indium tin oxide (ITO), the first nonmagnetic metal layer is made of Cu, and the second nonmagnetic metal layer is substantially made of Zn. MR change rate and heat resistance are thus much more improved than ever before.
摘要翻译：本发明提供一种具有CPP（垂直于平面的电流）结构的巨型磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠，它们具有沿堆叠方向施加的感测电流，其中自由层起着使得磁化方向取决于外部磁场的作用，并且间隔层包括第一和第二非磁性金属层，每个非磁性金属层由非磁性金属材料和介于第一和第二非磁性金属层之间的半导体氧化物层，其中形成间隔层的一部分的半导体氧化物层由氧化锌，氧化锡，氧化铟和氧化铟锡（ITO ），第一非磁性金属层由Cu制成，第二非磁性金属层基本上由Zn制成。因此，MR变化率和耐热性比以前更加改善。

63. 发明申请

US20090274837A1 METHOD OF PRODUCING THE MAGNETORESISTIVE DEVICE OF THE CPP TYPE 审中-公开
标题翻译：生产CPP型磁性装置的方法
公开(公告)号：US20090274837A1
公开(公告)日：2009-11-05
申请号：US12112598
申请日：2008-04-30
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： B05D5/12
CPC分类号： G11B5/3163 , G01R33/098 , G11B5/3903 , H01L43/12
摘要： The invention provides a process for the formation of a sensor site of a magnetoresistive device in which the first ferromagnetic layer and a nonmagnetic intermediate layer are formed in order, then surface treatment is applied to the surface of the nonmagnetic intermediate layer, and thereafter the second ferromagnetic layer is formed on the thus treated surface of the nonmagnetic intermediate layer. The surface treatment is implemented by a method of letting a modification element hit right on the surface of the nonmagnetic intermediate layer using a vacuum. The nonmagnetic intermediate layer is composed mainly of an oxide or nitride, and the modification element is a low-melting element having a melting point of 500° C. or lower. It is thus possible to reduce spin scattering while reducing oxidization or nitriding of the surfaces of the ferromagnetic layers used for the sensor site, thereby achieving high MR change rates. There is also a limited dispersion of the MR change rate with extremely improved reliability.
摘要翻译：本发明提供一种用于形成磁阻器件的传感器位置的方法，其中依次形成第一铁磁层和非磁性中间层，然后对非磁性中间层的表面进行表面处理，之后将第二铁磁体层在非磁性中间层的如此处理的表面上形成铁磁层。表面处理通过使用真空使修饰元件在非磁性中间层的表面上正确敲击的方法来实现。非磁性中间层主要由氧化物或氮化物构成，改性元素为熔点为500℃以下的低熔点元素。因此，可以减少旋转散射，同时减少用于传感器部位的铁磁层的表面的氧化或氮化，由此实现高MR变化率。 MR变化率的有限分散也具有极高的可靠性。

64. 发明申请

US20090174971A1 CPP-TYPE MAGNETO RESISTIVE EFFECT ELEMENT HAVING A PAIR OF MAGNETIC LAYERS 审中-公开
标题翻译：具有磁性层对的CPP型MAGNETO电阻效应元件
公开(公告)号：US20090174971A1
公开(公告)日：2009-07-09
申请号：US11968788
申请日：2008-01-03
申请人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
发明人： Yoshihiro Tsuchiya , Shinji Hara , Tomohito Mizuno , Satoshi Miura , Takumi Yanagisawa
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B5/3929 , G11B2005/3996
摘要： A magnetoresistance effect element comprises: a pair of magnetic layers whose magnetization directions form a relative angle therebetween that is variable depending on an external magnetic field; and a crystalline spacer layer sandwiched between the pair of magnetic layers; wherein sense current may flow in a direction that is perpendicular to a film plane of the pair of magnetic layers and the spacer layer. The spacer layer includes a crystalline oxide, and either or both magnetic layers whose magnetization direction is variable depending on the external magnetic field has a layer configuration in which a CoFeB layer is sandwiched between a CoFe layer and a NiFe layer and is positioned between the spacer layer and the NiFe layer.
摘要翻译：磁阻效应元件包括：一对磁性层，其磁化方向形成其间的相对角度，其可根据外部磁场而变化; 以及夹在所述一对磁性层之间的结晶间隔层; 其中感测电流可以在垂直于一对磁性层和间隔层的膜平面的方向上流动。间隔层包括结晶氧化物，并且其磁化方向根据外部磁场而变化的任一个或两个磁性层具有其中CoFeB层夹在CoFe层和NiFe层之间并位于间隔物之间的层构造层和NiFe层。

65. 发明申请

US20070230070A1 Magnetoresistive element including heusler alloy layer 有权
标题翻译：磁阻元件包括heusler合金层
公开(公告)号：US20070230070A1
公开(公告)日：2007-10-04
申请号：US11709148
申请日：2007-02-22
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/127
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3929 , G11B2005/3996
摘要： A pinned layer of an MR element includes an underlying magnetic layer made of a magnetic alloy layer having a body-centered cubic structure, and a Heusler alloy layer formed on the underlying magnetic layer. A free layer of the MR element includes an underlying magnetic layer made of a magnetic alloy layer having a body-centered cubic structure, and a Heusler alloy layer formed on the underlying magnetic layer. Each of these two Heusler alloy layers is made of a CoMnSi alloy having an Mn content higher than 25 atomic percent and lower than or equal to 40 atomic percent, and contains a principal component having a B2 structure in which Co atoms are placed at body-centered positions of unit cells and Mn atoms or Si atoms are randomly placed at vertexes of the unit cells.
摘要翻译： MR元件的被钉扎层包括由具有体心立方结构的磁性合金层制成的下层磁性层，以及形成在下面的磁性层上的Heusler合金层。 MR元件的自由层包括由具有体心立方结构的磁性合金层制成的下层磁性层和形成在下面的磁性层上的Heusler合金层。这两个Heusler合金层中的每一个由Mn含量高于25原子％且低于或等于40原子％的CoMnSi合金制成，并且包含具有其中Co原子被置于体态的B2结构的主要成分，单元电池的中心位置和Mn原子或Si原子随机放置在单位晶胞的顶点。

66. 发明授权

US07760475B2 Magneto-resistance effect element having free layer including magnetostriction reduction layer and thin-film magnetic head 有权
标题翻译：具有自由层的磁阻效应元件包括磁致伸缩还原层和薄膜磁头
公开(公告)号：US07760475B2
公开(公告)日：2010-07-20
申请号：US11685043
申请日：2007-03-12
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Kei Hirata
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Kei Hirata
IPC分类号： G11B5/127
CPC分类号： H01F10/1936 , B82Y25/00 , G01R33/093 , G01R33/18 , G11B5/3906 , H01F10/3272 , H01F10/3295 , Y10T428/1107
摘要： A magnetoresistance effect element includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction variable depending on an external magnetic field, and a nonmagnetic spacer layer disposed between the pinned layer and the free layer. The free layer includes a Heusler alloy layer and a magnetostriction reduction layer made of a 4th group element, a 5th group element, or a 6th group element.
摘要翻译：磁阻效应元件包括具有固定磁化方向的固定层，具有取决于外部磁场的磁化方向可变的自由层和设置在被钉扎层和自由层之间的非磁性间隔层。自由层包括Heusler合金层和由第4族元素，第5族元素或第6族元素构成的磁致伸缩层。

67. 发明申请

US20080112096A1 MAGNETO-RESISTIVE EFFECT DEVICE, THIN-FILM MAGNETIC HEAD, HEAD GIMBAL ASSEMBLY, AND HARD DISK SYSTEM 有权
标题翻译：磁阻效应器件，薄膜磁头，头盖组件和硬盘系统
公开(公告)号：US20080112096A1
公开(公告)日：2008-05-15
申请号：US11934979
申请日：2007-11-05
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Kei Hirata
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Kei Hirata
IPC分类号： G11B5/33
CPC分类号： G11B5/39 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3993 , H01F10/3254 , H01L43/10
摘要： The thickness of the semiconductor layer forming a part of the spacer layer is set in the thickness range for a transitional area showing conduction performance halfway between ohmic conduction and semi-conductive conduction in relation to the junction of the semiconductor layer with the first nonmagnetic metal layer and the second nonmagnetic metal layer. This permits the specific resistance of the spacer layer to be greater than that of an ohomic conduction area, so that spin scattering and diffusion depending on a magnetized state increases, resulting in an increase in the MR ratio. The CPP-GMR device can also have a suitable area resistivity (AR) value.If the device can have a suitable area resistivity and a high MR ratio, it is then possible to obtain more stable output power in low current operation than ever before, and extend the service life of the device as well. The device is also lower in resistance than a TMR device, so that significant noise reductions are achievable.
摘要翻译：形成间隔层的一部分的半导体层的厚度设定在相对于半导体层与第一非磁性金属层的接合部的表现为欧姆导通和半导电传导之间的导通性能的过渡区域的厚度范围和第二非磁性金属层。这允许间隔层的比电阻大于欧姆导电面积的电阻，使得依赖于磁化状态的自旋散射和扩散增加，导致MR比的增加。 CPP-GMR装置也可以具有合适的面积电阻率（AR）值。如果器件可以具有合适的面积电阻率和高的MR比，那么在低电流操作中可以获得比以往更稳定的输出功率，并且延长器件的使用寿命。该器件的电阻也比TMR器件低，从而可以实现显着的降噪。

68. 发明授权

US08203808B2 Magneto-resistance effect element including free layer having multilayer constitution including magnetic body mixed with element having 4F electrons 有权
标题翻译：磁阻效应元件包括具有多层结构的自由层，包括与4F电子元素混合的磁体
公开(公告)号：US08203808B2
公开(公告)日：2012-06-19
申请号：US11927486
申请日：2007-10-29
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01L43/10
摘要： In an MR element constituted in such a manner that a pinned layer whose magnetization direction is fixed, a nonmagnetic spacer layer, and a free layer whose magnetization direction is changed according to an external magnetic field, are laminated in this order; the free layer has a multilayer constitution including a magnetic body mixed with an element having 4f electrons at a certain ratio. Specifically, the first layer in contact with the spacer layer, the third layer, the fifth layer, and the seventh layer of the free layer are formed by mixing Nd, Sm, Gd, or Tb into CoFe. The second layer and the sixth layer of the free layer are formed by mixing Nd, Sm, Gd, or Tb into NiFe. The third layer of the free layer is Cu. A damping constant of the free layer is greater than 0.018.
摘要翻译：在以使得其磁化方向固定的钉扎层，非磁性间隔层和其磁化方向根据外部磁场而变化的自由层的方式构成的MR元件依次层叠; 自由层具有包含以与特定比例的4f电子元素混合的磁体的多层结构。具体地，通过将Nd，Sm，Gd或Tb混合到CoFe中，形成与间隔层，第三层，第五层和第七层自由层接触的第一层。通过将Nd，Sm，Gd或Tb混合到NiFe中而形成自由层的第二层和第六层。自由层的第三层是Cu。自由层的阻尼常数大于0.018。

69. 发明授权

US08000066B2 Hard disk system incorporating a current perpendicular to plane magneto-resistive effect device with a spacer layer in the thickness range showing conduction performance halfway between OHMIC conduction and semi-conductive conduction 有权
标题翻译：包含垂直于平面磁阻效应器件的电流的硬盘系统，其厚度范围内的间隔层表现出OHMIC传导和半导电传导之间的传导性能
公开(公告)号：US08000066B2
公开(公告)日：2011-08-16
申请号：US11934979
申请日：2007-11-05
申请人： Tomohito Mizuno , Yoshihiro Tsuchiya , Kei Hirata
发明人： Tomohito Mizuno , Yoshihiro Tsuchiya , Kei Hirata
IPC分类号： G11B5/39
CPC分类号： G11B5/39 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/3993 , H01F10/3254 , H01L43/10
摘要： The thickness of the semiconductor layer forming a part of the spacer layer is set in the thickness range for a transitional area showing conduction performance halfway between ohmic conduction and semi-conductive conduction in relation to the junction of the semiconductor layer with the first nonmagnetic metal layer and the second nonmagnetic metal layer. This permits the specific resistance of the spacer layer to be greater than that of an ohmic conduction area, so that spin scattering and diffusion depending on a magnetized state increases, resulting in an increase in the MR ratio. The CPP-GMR device can also have a suitable area resistivity (AR) value. If the device can have a suitable area resistivity and a high MR ratio, it is then possible to obtain more stable output power in low current operation. The device is also lower in resistance than a TMR device, so that significant noise reductions are achievable.
摘要翻译：形成间隔层的一部分的半导体层的厚度设定在相对于半导体层与第一非磁性金属层的接合部的表现为欧姆导通和半导电传导之间的导通性能的过渡区域的厚度范围和第二非磁性金属层。这允许间隔层的比电阻大于欧姆导电区域的电阻率，使得依赖于磁化状态的自旋散射和扩散增加，导致MR比的增加。 CPP-GMR装置也可以具有合适的面积电阻率（AR）值。如果器件可以具有合适的面积电阻率和高的MR比，则可以在低电流操作中获得更稳定的输出功率。该器件的电阻也比TMR器件低，从而可以实现显着的降噪。

70. 发明授权

US07859798B2 Magnetic thin film having non-magnetic spacer layer that is provided with SnO2 layer 有权
标题翻译：具有设置有SnO 2层的非磁性间隔层的磁性薄膜
公开(公告)号：US07859798B2
公开(公告)日：2010-12-28
申请号：US11676969
申请日：2007-02-20
申请人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
发明人： Shinji Hara , Yoshihiro Tsuchiya , Tomohito Mizuno
IPC分类号： G11B5/39
CPC分类号： G11B5/3906 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A magnetic thin film has: a pinned layer whose magnetization direction is fixed with respect to an external magnetic field; a free layer whose magnetization direction is changed in accordance with the external magnetic field; and a non-magnetic spacer layer that is sandwiched between said the pinned layer and the free layer, wherein sense current is configured to flow in a direction that is perpendicular to film surfaces of the pinned layer, the non-magnetic spacer layer, and the free layer. The non-magnetic spacer layer has a first layer which includes SnO2, and a pair of second layers which are provided to sandwich the first layer, the second layers being made of a material which exhibits a higher corrosion potential than Sn.
摘要翻译：磁性薄膜具有：磁化方向相对于外部磁场固定的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及夹在所述被钉扎层和所述自由层之间的非磁性间隔层，其中，感测电流被配置为沿着与所述被钉扎层，所述非磁性间隔层的膜表面垂直的方向流动，层。非磁性间隔层具有包括SnO 2的第一层和设置成夹持第一层的一对第二层，第二层由表现出比Sn更高的腐蚀电位的材料制成。

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