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    • 67. 发明授权
    • Semiconductor manufacturing method
    • 半导体制造方法
    • US08211781B2
    • 2012-07-03
    • US12615277
    • 2009-11-10
    • Tatsuma SaitoShinichi TanakaYusuke Yokobayashi
    • Tatsuma SaitoShinichi TanakaYusuke Yokobayashi
    • H01L21/461
    • H01L33/0095B23K26/0604B23K26/364B23K26/40B23K2103/172Y10S438/977
    • A manufacturing method for semiconductor devices having a metal support is provided. The method in one aspect includes growing a semiconductor film on a growth substrate; forming a metal support on a surface of said semiconductor film opposite to the growth substrate; thereafter removing said growth substrate from said semiconductor film; forming a street groove reaching said metal support in the said semiconductor film; radiating a first laser beam onto said metal support to form a first dividing groove having a substantially flat bottom in said metal support; and radiating a second laser beam onto said metal support to form a second dividing groove that penetrates through a portion of said metal support that remains where the first dividing groove is formed.
    • 提供了具有金属支撑件的半导体器件的制造方法。 一方面的方法包括在生长衬底上生长半导体膜; 在与所述生长基板相对的所述半导体膜的表面上形成金属载体; 然后从所述半导体膜去除所述生长衬底; 在所述半导体膜中形成到达所述金属支撑件的街道槽; 将第一激光束辐射到所述金属支撑件上以形成在所述金属支撑件中具有基本平坦的底部的第一分隔槽; 并且将第二激光束辐射到所述金属支撑件上以形成第二分隔槽,该第二分隔槽穿过保留在形成第一分隔槽的部分所述金属支撑件。