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61. 发明申请

US20120147504A1 High resolution magnetic read head 有权
标题翻译：高分辨率磁读头
公开(公告)号：US20120147504A1
公开(公告)日：2012-06-14
申请号：US12928473
申请日：2010-12-13
申请人： Yuchen Zhou , Wenyu Chen , Joe Smyth
发明人： Yuchen Zhou , Wenyu Chen , Joe Smyth
IPC分类号： G11B5/127
CPC分类号： G11B5/3932 , G01R33/098 , G11B5/3909 , G11B2005/3996 , Y10T29/49044 , Y10T29/49048
摘要： A CPP MR read head and its method of fabrication includes a patterned CPP MR sensor stack having a SAF free layer structure that is longitudinally biased by the combination of an exchange biasing layer formed over the sensor stack and hard biasing layers that are formed adjacent to the patterned sides of the stack. The combination provides the stack with high resolution reading capabilities without the necessity for a narrow read gap formed by closely spaced top and bottom shields. Sixteen embodiments are described that provide different versions of the exchange biasing layer, different positions of the hard biasing layers and different patternings of the CPP MR sensor stack.
摘要翻译： CPP MR读取头及其制造方法包括具有SAF自由层结构的图案化CPP MR传感器堆叠，其通过在传感器堆叠上形成的交换偏置层与形成在传感器堆叠附近的硬偏置层的组合而被纵向偏置堆叠的图案侧。该组合提供了具有高分辨率读取能力的堆叠，而不需要由紧密间隔的顶部和底部屏蔽形成的窄读取间隙。描述了提供不同版本的交换偏置层，硬偏置层的不同位置和CPP MR传感器堆叠的不同图案的十六个实施例。

62. 发明授权

US08023231B2 Composite shield structure of PMR writer for high track density 有权
标题翻译：用于高轨道密度的PMR写入器的复合屏蔽结构
公开(公告)号：US08023231B2
公开(公告)日：2011-09-20
申请号：US12807173
申请日：2010-08-30
申请人： Lijie Guan , Moris Dovek , Joe Smyth , Yoshitaka Sasaki
发明人： Lijie Guan , Moris Dovek , Joe Smyth , Yoshitaka Sasaki
IPC分类号： G11B5/127
CPC分类号： G11B5/1278 , G11B5/11 , G11B5/3116 , G11B5/3146 , G11B5/315
摘要： Improved writability and a substantial reduction in adjacent track erasure are achieved by incorporating a composite shield structure in a PMR writer. There is a trailing shield formed a certain distance above the top surface of a write pole, a leading shield formed a certain distance below the bottom surface of the write pole, and a partial side shield having a side shield section formed on each side of the write pole. The partial side shield thickness is less than that of the write pole. Each partial side shield section has a side that is parallel to the nearest write pole side and a top surface that is offset from the write pole top surface by 0 to 0.15 microns. A plurality of magnetic connections between two or more shield elements is employed to ensure correct magnetic potential. The large write pole has a flare angle of 45 to 75 degrees.
摘要翻译：通过在PMR写入器中并入复合屏蔽结构来实现改进的可编写性和相邻轨迹擦除的实质性减少。在写入磁极的上表面之上形成一定距离的尾部屏蔽件，在写入磁极的底表面下方形成一定距离的前屏蔽件，以及形成在屏蔽件的每一侧上的侧面屏蔽部分写柱部分侧屏蔽厚度小于写入极的厚度。每个局部侧屏蔽部分具有平行于最近的写入极侧的一侧和从写入磁极顶部表面偏移0至0.15微米的顶部表面。采用两个或更多个屏蔽元件之间的多个磁连接来确保正确的磁势。大写字杆的喇叭角为45度至75度。

63. 发明授权

US08582240B1 Magnetic recording assisted by spin torque oscillator with a radio frequency current bias 有权
标题翻译：由具有射频电流偏置的自旋转矩振荡器辅助磁记录
公开(公告)号：US08582240B1
公开(公告)日：2013-11-12
申请号：US13597472
申请日：2012-08-29
申请人： Wenyu Chen , Joe Smyth
发明人： Wenyu Chen , Joe Smyth
IPC分类号： G11B5/127
CPC分类号： G11B5/399 , G11B5/1278 , G11B5/314 , G11B5/3146 , G11B2005/0024
摘要： A design is disclosed for a microwave assisted magnetic recording device wherein direct current and rf current are simultaneously injected from a bias tee into a spin transfer oscillator (STO) between a main pole and write shield to improve the assist process. The STO oscillation layer (OL) has a large angle magnetization oscillation frequency that is locked to a magnetic medium bit resonance frequency f0 when the rf current has a frequency f=f0 and a threshold current density is applied. Alternatively, the OL magnetization oscillation frequency may be adjusted closer to f0 to improve the assist process. A third advantage is lowering the threshold current density when both direct current and rf current are injected into the STO during a write process. The main pole is grounded when direct current and rf current are injected into a write shield.
摘要翻译：公开了一种用于微波辅助磁记录装置的设计，其中直流电流和射频电流同时从偏置三通管注入主极和写屏蔽之间的自旋转移振荡器（STO），以改善辅助过程。 STO振荡层（OL）具有大的角度磁化振荡频率，当rf电流具有频率f = f0并施加阈值电流密度时，其被锁定到磁介质位谐振频率f0。或者，可以将OL磁化振荡频率调整为更接近于f0，以改善辅助处理。第三个优点是在写入过程中将直流和直流电流都注入到STO中时降低阈值电流密度。当直流电流和rf电流注入写入屏蔽时，主极接地。

64. 发明申请

US20130049747A1 MR sensor with back edge flux guide 有权
标题翻译：具有后缘磁通导向器的MR传感器
公开(公告)号：US20130049747A1
公开(公告)日：2013-02-28
申请号：US13199183
申请日：2011-08-22
申请人： Yuchen Zhou , Joe Smyth , Min Li , Glen Garfunkel
发明人： Yuchen Zhou , Joe Smyth , Min Li , Glen Garfunkel
IPC分类号： G01R33/09 , B32B37/14 , B32B38/08 , B32B38/10 , B32B38/00
CPC分类号： G01R33/098 , B32B37/02 , B32B38/10 , B32B2307/212 , B32B2309/105 , B32B2457/08 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An MR sensor, and a method for making it, is described. Part of the MR stack, from the free layer on up, is removed and then replaced by a flux guide. Additional stabilizing means for this flux guide are provided, either as hard bias or through exchange coupling.
摘要翻译：描述MR传感器及其制造方法。去除自由层上的MR堆叠的一部分，然后用助焊剂代替。提供用于该磁通引导件的附加稳定装置，作为硬偏置或通过交换耦合。

65. 发明授权

US08105705B2 External field robustness of read/write head shields 有权
标题翻译：读/写头屏蔽的外部场强鲁棒性
公开(公告)号：US08105705B2
公开(公告)日：2012-01-31
申请号：US12589598
申请日：2009-10-26
申请人： Zhigang Bai , Yuchen Zhou , Joe Smyth , Moris Dovek , Yan Wu
发明人： Zhigang Bai , Yuchen Zhou , Joe Smyth , Moris Dovek , Yan Wu
IPC分类号： G11B5/127 , G11B5/858
CPC分类号： G11B5/1278 , G11B5/315 , G11B5/6011 , Y10T428/1171
摘要： An improved magnetic shield for a perpendicular magnetic write head is disclosed. Its main feature is a pair of tabs at the shield's bottom corners. Said tabs are significantly wider at their point of attachment to the shield than further away from the shield. The end portions of each tab slope upwards (away from the ABS) at an angle of about ten degrees. A process for manufacturing the shield is also disclosed.
摘要翻译：公开了用于垂直磁写头的改进的磁屏蔽。它的主要特征是盾牌底角上的一对标签。所述突片在其远离屏蔽件的位置处与屏蔽件的连接点明显更宽。每个翼片的端部以大约十度的角度向上（远离ABS）倾斜。还公开了一种用于制造屏蔽的工艺。

66. 发明申请

US20100328816A1 Composite shield structure of PMR writer for high track density 有权
标题翻译：用于高轨道密度的PMR写入器的复合屏蔽结构
公开(公告)号：US20100328816A1
公开(公告)日：2010-12-30
申请号：US12807173
申请日：2010-08-30
申请人： Lijie Guan , Moris Dovek , Joe Smyth , Yoshitaka Sasaki
发明人： Lijie Guan , Moris Dovek , Joe Smyth , Yoshitaka Sasaki
IPC分类号： G11B5/17
CPC分类号： G11B5/1278 , G11B5/11 , G11B5/3116 , G11B5/3146 , G11B5/315
摘要： Improved writability and a substantial reduction in adjacent track erasure are achieved by incorporating a composite shield structure in a PMR writer. There is a trailing shield formed a certain distance above the top surface of a write pole, a leading shield formed a certain distance below the bottom surface of the write pole, and a partial side shield having a side shield section formed on each side of the write pole. The partial side shield thickness is less than that of the write pole. Each partial side shield section has a side that is parallel to the nearest write pole side and a top surface that is offset from the write pole top surface by 0 to 0.15 microns. A plurality of magnetic connections between two or more shield elements is employed to ensure correct magnetic potential. The large write pole has a flare angle of 45 to 75 degrees.
摘要翻译：通过在PMR写入器中并入复合屏蔽结构来实现改进的可编写性和相邻轨迹擦除的实质性减少。在写入磁极的上表面之上形成一定距离的尾部屏蔽件，在写入磁极的底表面下方形成一定距离的前屏蔽件，以及形成在屏蔽件的每一侧上的侧面屏蔽部分写柱部分侧屏蔽厚度小于写入极的厚度。每个局部侧屏蔽部分具有平行于最近的写入极侧的一侧和从写入磁极顶部表面偏移0至0.15微米的顶部表面。采用两个或更多个屏蔽元件之间的多个磁连接来确保正确的磁势。大写字杆的喇叭角为45度至75度。

67. 发明申请

US20090116145A1 Perpendicular shield pole writer with tapered main pole and tapered non-magnetic top shaping layer 有权
标题翻译：垂直屏蔽极写入器，带锥形主极和锥形非磁性顶部成型层
公开(公告)号：US20090116145A1
公开(公告)日：2009-05-07
申请号：US11982597
申请日：2007-11-02
申请人： Liejie Guan , Joe Smyth , Moris Dovek , Yoshitaka Sasaki , Cherng-Chyi Han
发明人： Liejie Guan , Joe Smyth , Moris Dovek , Yoshitaka Sasaki , Cherng-Chyi Han
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/23 , G11B5/3163
摘要： A PMR writer with a tapered main pole layer and tapered non-magnetic top-shaping layer is disclosed that minimizes trailing shield saturation. A second non-magnetic top shaping layer may be employed to reduce the effective TH size while the bulk of the trailing shield is thicker to allow a larger process window for back end processing. A sloped surface with one end at the ABS and a second end 0.05 to 0.3 microns from the ABS is formed at a 10 to 80 degree angle to the ABS and includes a sloped surface on the upper portion of the main pole layer and on the non-magnetic top shaping layer. An end is formed on the second non-magnetic top shaping layer at the second end of the sloped surface followed by forming a conformal write gap layer and then depositing the trailing shield on the write gap layer and along the ABS.
摘要翻译：公开了一种具有锥形主极层和锥形非磁性顶部成形层的PMR写入器，其使拖尾屏蔽饱和度最小化。可以采用第二非磁性顶部成形层来减小有效的TH尺寸，同时尾部屏蔽的大部分较厚以允许用于后端处理的较大的工艺窗口。在ABS处具有一端的倾斜表面和距离ABS的0.05至0.3微米的第二端与ABS形成10至80度的角度，并且包括在主极层的上部上的非倾斜表面，磁顶成型层。在倾斜表面的第二端处在第二非磁性顶部成形层上形成端部，随后形成共形写入间隙层，然后将后部屏蔽层沉积在写入间隙层上并沿着ABS。

68. 发明申请

US20080273277A1 Composite shield structure of PMR writer for high track density 有权
标题翻译：用于高轨道密度的PMR写入器的复合屏蔽结构
公开(公告)号：US20080273277A1
公开(公告)日：2008-11-06
申请号：US11787016
申请日：2007-04-13
申请人： Lijie Guan , Moris Dovek , Joe Smyth , Yoshitaka Sasaki
发明人： Lijie Guan , Moris Dovek , Joe Smyth , Yoshitaka Sasaki
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11B5/1278 , G11B5/11 , G11B5/3116 , G11B5/3146 , G11B5/315
摘要： Improved writability and a substantial reduction in adjacent track erasure are achieved by incorporating a composite shield structure in a PMR writer. There is a trailing shield formed a certain distance above the top surface of a write pole, a leading shield formed a certain distance below the bottom surface of the write pole, and a partial side shield having a section formed on each side of the write pole. The partial side shield thickness is less than that of the write pole. Each partial side shield section has a side that is parallel to the nearest write pole side and a top surface that is offset from the write pole top surface by 0 to 0.15 microns. A plurality of magnetic connections between two or more shield elements is employed to ensure correct magnetic potential. The large write pole has a flare angle of 45 to 75 degrees.
摘要翻译：通过在PMR写入器中并入复合屏蔽结构来实现改进的可编写性和相邻轨迹擦除的实质性减少。在写极的上表面之上形成一定距离的后屏蔽，在写极的底表面下方形成一定距离的前屏蔽，以及形成在写柱的每一侧上的部分的局部侧屏蔽。部分侧屏蔽厚度小于写入极的厚度。每个局部侧屏蔽部分具有平行于最近的写入极侧的一侧和从写入磁极顶部表面偏移0至0.15微米的顶部表面。采用两个或更多个屏蔽元件之间的多个磁连接来确保正确的磁势。大写字杆的喇叭角为45度至75度。

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