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    • 66. 发明申请
    • Method for Manufacturing Molten Metal Plated Steel Strip
    • 熔融金属镀层钢带的制造方法
    • US20090159233A1
    • 2009-06-25
    • US12227206
    • 2007-04-27
    • Gentaro TakedaHideyuki Takahashi
    • Gentaro TakedaHideyuki Takahashi
    • B22D11/12
    • C23C2/20
    • To stably manufacture a high-quality molten metal plated steel strip while splashes caused in use of a gas wiping nozzle for controlling the plating amount is prevented. A gas wiping nozzle is used which includes a primary nozzle portion and at least one secondary nozzle portion provided either or both above and below the primary nozzle portion. The secondary nozzle portion jets a gas in a direction tilted from the direction in which the primary nozzle portion jets the gas, and the secondary nozzle portion jets the gas at a lower flow rate than the primary nozzle portion. The gas wiping nozzle has a tip whose lower surface forms an angle of 60° or more with the steel strip. By jetting a gas from the secondary nozzle portion at predetermined conditions, the gas jet can scrape molten metal effectively. By controlling the angle between the lower surface of the gas wiping nozzle and the steel strip, the plating can be scraped more effectively. Thus, the molten metal can be appropriately scraped without excessively increasing the gas pressure. Consequently, splashes can be reduced. Furthermore, the gas jetting port of the secondary nozzle portion is displaced in the direction opposite to the steel strip at least 5 mm apart from the gas jetting port of the primary nozzle portion, and the secondary nozzle portion jets the gas so that the flow rate of the secondary gas jet comes to 10 m/s or more at the confluence with the primary gas jet from the primary nozzle portion.
    • 为了稳定地制造高品质的镀有熔融金属的钢带,防止了在使用用于控制电镀量的气体擦拭喷嘴引起的飞溅时。 使用气体擦拭喷嘴,其包括主喷嘴部分和设置在主喷嘴部分上方和下方的至少一个副喷嘴部分。 二次喷嘴部沿从主喷嘴部喷射气体的方向倾斜的方向喷射气体,二次喷嘴部以比主喷嘴部低的流量喷射气体。 气体擦拭喷嘴的下表面与钢带形成60°以上的角度。 通过在预定条件下从二次喷嘴部喷射气体,气体射流可以有效地刮擦熔融金属。 通过控制气体擦拭喷嘴的下表面和钢带之间的角度,可以更有效地刮削电镀。 因此,可以适当地刮擦熔融金属,而不会过度增加气体压力。 因此,可以减少飞溅。 此外,二次喷嘴部的气体喷射口与主喷嘴部的气体喷射口相距至少5mm的方向相对于钢带的方向位移,二次喷嘴部喷射气体,使得流量 的二次气体射流在与主喷嘴部分的主气体射流的汇合处达到10m / s以上。
    • 69. 发明授权
    • Reception device and reception method
    • 接收设备和接收方式
    • US07324494B2
    • 2008-01-29
    • US10515111
    • 2003-05-19
    • Akihiko NishioHideyuki Takahashi
    • Akihiko NishioHideyuki Takahashi
    • H04B7/216H04B1/00
    • H04B1/70752H04B1/7113H04B1/712H04B2201/70709
    • A spreading code determining section (107) determines which spreading code is multiplexed in a received signal that has been received by an antenna (101) and has gone through a radio receiver (102), a correlation processing section (103), a delay profile generator (104), a midamble shift determining section (105), and a path selector (106). When determining that it is during DTX, from the output of the spreading code determining section (107), a DTX determining section (110) reports this to the radio receiver (102), the path selector (106), a JD operation section (108), and a despreading/RAKE-combination section (109) to make them stop processing. Thus, despreading, RAKE combination, and JD demodulation of the received signal are suspended during DTX, so that power consumption can be suppressed.
    • 扩展码确定部分(107)确定在由天线(101)接收并已经经过无线电接收机(102)的接收信号中复用哪个扩展码,相关处理部分(103),延迟分布 发生器(104),中置码移位确定部分(105)和路径选择器(106)。 当DTX判定为DTX时,DTX决定部(110)从无线接收装置(102),路径选择器(106),JD操作部(106) 108)和解扩/ RAKE组合部分(109),以使它们停止处理。 因此,在DTX期间暂停接收信号的解扩,RAKE组合和JD解调,从而可以抑制功耗。
    • 70. 发明申请
    • Sb-Te Alloy Sintered Compact Sputtering Target
    • Sb-Te合金烧结紧凑型溅射靶
    • US20070297938A1
    • 2007-12-27
    • US11719967
    • 2005-09-30
    • Hideyuki Takahashi
    • Hideyuki Takahashi
    • C22C12/00
    • C22C12/00B22F2003/247B22F2998/10B22F2999/00C22C28/00C23C14/3414G11B7/266B22F9/082B22F3/10B22F3/24B22F2201/11
    • Provided is an Sb—Te alloy sintered compact sputtering target having at least Sb or Te as its primary component, wherein surface roughness Ra is 0.4 μm or less, purity excluding gas components is 4N or more, content of gas components as impurities is 1500 ppm or less, and average crystal grain size is 50 μm or less. With this Sb—Te alloy sintered compact sputtering target, the density of defects having a maximum length of 10 μm or greater arising in a surface finish by machining is 80 or less in an 800 μm square. Thus, the Sb—Te alloy sputtering target structure can be uniformalized and refined, generation of cracks in the sintered target can be inhibited, and generation of arcing during sputtering can be inhibited. Further, surface ruggedness caused by sputter erosion can be reduced in order to obtain a high quality Sb—Te alloy sputtering target.
    • 提供一种Sb-Te合金烧结体型溅射靶,其具有Sb或Te为主要成分,表面粗糙度Ra为0.4μm以下,除气体成分以外的纯度为4N以上,作为杂质的气体成分含量为1500ppm 以下,平均结晶粒径为50μm以下。 对于该Sb-Te合金烧结体型溅射靶,通过机械加工而产生的最大长度为10μm以上的缺陷的密度为800μm以下,为80以下。 因此,Sb-Te合金溅射靶结构可以均匀化和精制,可以抑制烧结靶中的裂纹的产生,并且可以抑制溅射期间的电弧放电。 此外,为了获得高品质的Sb-Te合金溅射靶,可以减少由溅射侵蚀引起的表面粗糙度。