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61. 发明申请

US20110044573A1 Advanced Modulation Formats for Silicon-Based Optical Modulators 有权
标题翻译：基于硅的光学调制器的高级调制格式
公开(公告)号：US20110044573A1
公开(公告)日：2011-02-24
申请号：US12856144
申请日：2010-08-13
申请人： Mark Webster , Anujit Shastri , Kalpendu Shastri
发明人： Mark Webster , Anujit Shastri , Kalpendu Shastri
IPC分类号： G02F1/035
CPC分类号： G02F1/0121 , G02F1/2257 , G02F2001/0152 , H04B10/5051 , H04B10/5053 , H04B10/5055 , H04B10/516
摘要： A silicon-based optical modulator is configured as a multi-segment device that utilizes a modified electrical data input signal format to address phase modulation nonlinearity and attenuation problems associated with free-carrier dispersion-based modulation. The modulator is formed to include M separate segments and a digital signal encoder is utilized to convert an N bit input data signal into a plurality of M drive signals for the M modulator segments, where M≧2N/2. The lengths of the modulator segments may also be adjusted to address the nonlinearity and attenuation problems. Additional phase adjustments may be utilized at the output of the modulator (beyond the combining waveguide).
摘要翻译：硅基光调制器被配置为多段设备，其利用修改的电数据输入信号格式来解决与自由载波色散调制相关的相位调制非线性和衰减问题。调制器被形成为包括M个单独的段，并且使用数字信号编码器将N位输入数据信号转换成用于M个调制器段的多个M个驱动信号，其中M≥N2N / 2。调制器段的长度也可以被调整以解决非线性和衰减问题。可以在调制器的输出（超过组合波导）的情况下使用附加的相位调整。

62. 发明授权

US07483597B2 Optical modulator utilizing multi-level signaling 有权
标题翻译：采用多级信令的光调制器
公开(公告)号：US07483597B2
公开(公告)日：2009-01-27
申请号：US11975050
申请日：2007-10-17
申请人： Kalpendu Shastri , Bipin Dama
发明人： Kalpendu Shastri , Bipin Dama
IPC分类号： G02F1/00 , G02F1/01 , G02F1/03 , G02F1/035 , G02B26/00
CPC分类号： G02F1/2255 , G02F1/0123 , H04B10/541
摘要： An optical modulator is formed to include a plurality of separate electrodes disposed along one arm, the electrodes having different lengths and driven with different signals to provide for multi-level signaling (e.g., PAM-4 signaling). By using separate drivers to energize the different sections, the number of sections energized at a given point in time will define the net phase shift introduced to the optical signal. The total length of the combined modulator sections is associated with a π phase shift (180°). Each section is driven by either a digital “one” or “zero”, so as to create the multi-level modulation. An essentially equal change in power between adjacent transmitted symbols is accomplished by properly adjusting the lengths of each individual section.
摘要翻译：光学调制器被形成为包括沿着一个臂布置的多个单独的电极，电极具有不同的长度并用不同的信号驱动以提供多级信号（例如，PAM-4信令）。通过使用单独的驱动器来激励不同的部分，在给定时间点通电的部分的数量将定义引入光信号的净相移。组合调制器部分的总长度与pi相移（180°）相关联。每个部分由数字“一”或“零”驱动，以创建多级调制。通过适当调整每个单独部分的长度来实现相邻传输符号之间的功率基本上相等的变化。

63. 发明授权

US07358585B2 Silicon-based Schottky barrier infrared optical detector 有权
标题翻译：硅基肖特基势垒红外光检测器
公开(公告)号：US07358585B2
公开(公告)日：2008-04-15
申请号：US10990725
申请日：2004-11-17
申请人： Vipulkumar Patel , Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery , Soham Pathak , David Piede , Kalpendu Shastri , Katherine A. Yanushefski
发明人： Vipulkumar Patel , Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery , Soham Pathak , David Piede , Kalpendu Shastri , Katherine A. Yanushefski
IPC分类号： G02B6/10 , H01L31/0224
CPC分类号： H01L31/108 , G02B6/12004 , G02B6/1228 , H01L31/022408 , H01L31/0232 , H01L31/03921 , H01L31/153 , Y02E10/50
摘要： A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., “planar SOI layer”) of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.
摘要翻译：通过将金属条（优选硅化物）放置在形成在平面硅表面层内的光波导的一部分（即，“平面SOI”）上，在绝缘体上硅（SOI）结构中形成硅基红外光电检测器层“），平面SOI层包括小于1微米的厚度。由于与基于SOI的结构相关联的相对较低的暗电流和使用相对小的表面积硅化物带收集光电流的能力，光电检测器的室温操作是完成的。可以掺杂平面SOI层，并且根据需要可以修改硅化物带的几何形状，以实现相对于现有技术的硅基光电探测器的改进的结果。

64. 发明申请

US20070292075A1 Silicon modulator offset tuning arrangement 有权
标题翻译：硅调制器偏移调谐布置
公开(公告)号：US20070292075A1
公开(公告)日：2007-12-20
申请号：US11810591
申请日：2007-06-06
申请人： Robert Keith Montgomery , Margaret Ghiron , Prakash Gothoskar , Paulius Mindaugas Mosinskis , Vipulkumar Patel , Kalpendu Shastri , Mark Webster
发明人： Robert Keith Montgomery , Margaret Ghiron , Prakash Gothoskar , Paulius Mindaugas Mosinskis , Vipulkumar Patel , Kalpendu Shastri , Mark Webster
IPC分类号： G02B6/12
CPC分类号： G02F1/025 , G02F1/0147 , G02F1/225 , G02F2201/126
摘要： A silicon-based optical modulator structure includes one or more separate localized heating elements for changing the refractive index of an associated portion of the structure and thereby providing corrective adjustments to address unwanted variations in device performance. Heating is provided by thermo-optic devices such as, for example, silicon-based resistors, silicide resistors, forward-biased PN junctions, and the like, where any of these structures may easily be incorporated with a silicon-based optical modulator. The application of a DC voltage to any of these structures will generate heat, which then transfers into the waveguiding area. The increase in local temperature of the waveguiding area will, in turn, increase the refractive index of the waveguiding in the area. Control of the applied DC voltage results in controlling the refractive index
摘要翻译：基于硅的光学调制器结构包括一个或多个单独的局部加热元件，用于改变结构的相关部分的折射率，从而提供校正调整以解决器件性能的不期望的变化。加热由诸如硅基电阻器，硅化物电阻器，正向偏置PN结等的热光器件提供，其中这些结构中的任何一种可以容易地与硅基光学调制器结合。对这些结构中的任何一个施加直流电压将产生热量，然后传递到波导区域。波导区域的局部温度的增加又将增加该区域中波导的折射率。施加的直流电压的控制导致控制折射率

65. 发明授权

US07113676B2 Planar waveguide optical isolator in thin silicon-on-isolator (SOI) structure 失效
标题翻译：薄硅隔离器（SOI）结构中的平面波导光隔离器
公开(公告)号：US07113676B2
公开(公告)日：2006-09-26
申请号：US11005286
申请日：2004-12-06
申请人： David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine A. Yanushefski , Harvey Wagner
发明人： David Piede , Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , Katherine A. Yanushefski , Harvey Wagner
IPC分类号： G02B6/26 , G02B6/42
CPC分类号： G02B6/1228 , G02B6/125 , G02B6/4207
摘要： A planar optical isolator is formed within the silicon surface layer of an SOI structure. A forward-directed signal is applied to an input waveguiding section of the isolator and thereafter propagates through a non-reciprocal waveguide coupling region into an output waveguide section. A rearward-directed signal enters via the output waveguide section and is thereafter coupled into the non-reciprocal waveguide structure, where the geometry of the structure functions to couple only a small amount of the reflected signal into the input waveguide section. In one embodiment, the non-reciprocal structure comprises an N-way directional coupler (with one output waveguide, one input waveguide and N−1 isolating waveguides). In another embodiment, the non-reciprocal structure comprises a waveguide expansion region including a tapered, mode-matching portion coupled to the output waveguide and an enlarged, non-mode matching portion coupled to the input waveguide such that a majority of a reflected signal will be mismatched with respect to the input waveguide section. By cascading a number of such planar SOI-based structures, increased isolation can be achieved—advantageously within a monolithic arrangement.
摘要翻译：在SOI结构的硅表面层内形成平面光隔离器。正向信号被施加到隔离器的输入波导部分，然后通过非互易波导耦合区域传播到输出波导部分中。后向信号经由输出波导部分进入，然后耦合到不可逆波导结构中，其中结构的几何结构仅将少量的反射信号耦合到输入波导部分中。在一个实施例中，非互易结构包括N路定向耦合器（具有一个输出波导，一个输入波导和N-1个隔离波导）。在另一个实施例中，不可逆结构包括波导扩展区域，其包括耦合到输出波导的锥形模式匹配部分和耦合到输入波导的放大的非模式匹配部分，使得反射信号的大部分将相对于输入波导部分不匹配。通过级联多个这种平面的基于SOI的结构，可以实现增加的隔离 - 有利地在单片布置中。

66. 发明授权

US07109739B2 Wafer-level opto-electronic testing apparatus and method 有权
标题翻译：晶圆级光电测试仪器及方法
公开(公告)号：US07109739B2
公开(公告)日：2006-09-19
申请号：US11075430
申请日：2005-03-08
申请人： Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , David Piede , Katherine A. Yanushefski
发明人： Prakash Gothoskar , Margaret Ghiron , Robert Keith Montgomery , Vipulkumar Patel , Kalpendu Shastri , Soham Pathak , David Piede , Katherine A. Yanushefski
IPC分类号： G01R31/26 , G01R31/00
CPC分类号： G02B6/30 , G02B6/34 , G02B2006/12107
摘要： A wafer-level testing arrangement for opto-electronic devices formed in a silicon-on-insulator (SOI) wafer structure utilizes a single opto-electronic testing element to perform both optical and electrical testing. Beam steering optics may be formed on the testing element and used to facilitate the coupling between optical probe signals and optical coupling elements (e.g., prism couplers, gratings) formed on the top surface of the SOI structure. The optical test signals are thereafter directed into optical waveguides formed in the top layer of the SOI structure. The opto-electronic testing element also comprises a plurality of electrical test pins that are positioned to contact a plurality of bondpad test sites on the opto-electronic device and perform electrical testing operations. The optical test signal results may be converted into electrical representations within the SOI structure and thus returned to the testing element as electrical signals.
摘要翻译：用于在绝缘体上硅（SOI）晶片结构中形成的光电器件的晶片级测试装置利用单个光电测试元件执行光学和电学测试。光束转向光学元件可以形成在测试元件上，并且用于促进光学探针信号与形成在SOI结构的顶表面上的光耦合元件（例如，棱镜耦合器，光栅）之间的耦合。此后，光学测试信号被引导到形成在SOI结构的顶层中的光波导中。光电测试元件还包括多个电测试引脚，其被定位成接触光电器件上的多个接合焊盘测试点并执行电测试操作。光学测试信号结果可以转换为SOI结构内的电气表示，并因此作为电信号返回到测试元件。

67. 发明申请

US20060126993A1 SOI-based optical interconnect arrangement 审中-公开
标题翻译：基于SOI的光学互连装置
公开(公告)号：US20060126993A1
公开(公告)日：2006-06-15
申请号：US11287114
申请日：2005-11-25
申请人： David Piede , Bipin Dama , Kalpendu Shastri , John Fangman , Harvey Wagner , Margaret Ghiron
发明人： David Piede , Bipin Dama , Kalpendu Shastri , John Fangman , Harvey Wagner , Margaret Ghiron
IPC分类号： G02B6/12
CPC分类号： H04B10/801 , G02B6/43
摘要： An SOI-based optical interconnection arrangement is provided that significantly reduces the size, complexity and power consumption requires of conventional high density electrical interconnections. In particular, a group of optical modulators and wavelength division multiplexers/demultiplexers are used in association with traditional electrical signal paths to “concentrate” a large number of the electrical-pinouts onto one optical waveguide (e.g., fiber). By utilizing a number of such SOI-based signal concentration structures, an optical backplane can be formed that couples all of these concentration structures through one optical substrate and then onto a separate number of output/receiving boards. Additionally, optical gain material may be embedded within the backplane element to further enhance the optical signal quality. The ability to integrate the electrical and optical components within a monolithic SOI-based structure provides for the significant reduction in the overall size of the connection arrangement and, further, reduces the power consumption by about an order of magnitude.
摘要翻译：提供了一种基于SOI的光互连装置，其显着地减小了常规高密度电互连所需的尺寸，复杂性和功耗。特别地，一组光调制器和波分复用器/解复用器与传统的电信号路径相关联地使用，以将大量的电插座“集中”到一个光波导（例如，光纤）上。通过利用多个这样的基于SOI的信号浓度结构，可以形成光背板，其通过一个光学基板将所有这些浓度结构耦合到另一数目的输出/接收板上。此外，光增益材料可以嵌入在背板元件内以进一步增强光信号质量。将电和光学部件集成在基于单片SOI的结构内的能力提供了连接装置的整体尺寸的显着降低，并且进一步将功耗降低约一个数量级。

68. 发明授权

US07058261B2 Interfacing multiple wavelength sources to thin optical waveguides utilizing evanescent coupling 有权
标题翻译：使用ev逝耦合将多个波长源连接到薄光波导上
公开(公告)号：US07058261B2
公开(公告)日：2006-06-06
申请号：US10935146
申请日：2004-09-07
申请人： Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine A. Yanushefski
发明人： Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine A. Yanushefski
IPC分类号： G02B6/34
CPC分类号： G02B6/12007 , G02B6/124 , G02B6/34
摘要： An arrangement for achieving and maintaining high efficiency coupling of light between a multi-wavelength optical signal and a relatively thin (e.g., sub-micron) silicon optical waveguide uses a prism coupler in association with an evanescent coupling layer. A grating structure having a period less than the wavelengths of transmission is formed in the coupling region (either formed in the silicon waveguide, evanescent coupling layer, prism coupler, or any combination thereof) so as to increase the effective refractive index “seen” by the multi-wavelength optical signal in the area where the beam exiting/entering the prism coupler intercepts the waveguide surface (referred to as the “prism coupling surface”). The period and/or duty cycle of the grating can be controlled to modify the effective refractive index profile in the direction away from the coupling region so as to reduce the effective refractive index from the relatively high value useful in multi-wavelength coupling to the lower value associated with maintaining confinement of the optical signals within the surface waveguide structure, thus reducing reflections along the transition region.
摘要翻译：用于实现和维持多波长光信号和较薄（例如亚微米）硅光波导之间的高效率耦合的布置使用与渐逝耦合层相关联的棱镜耦合器。在耦合区域（形成在硅波导，ev逝耦合层，棱镜耦合器或其任何组合中）形成具有小于透射波长的周期的光栅结构，以便通过“看到”来提高有效折射率离开/进入棱镜耦合器的光束截取波导表面（称为“棱镜耦合表面”）的区域中的多波长光信号。可以控制光栅的周期和/或占空比以在远离耦合区域的方向上改变有效折射率分布，以便将有效折射率从在多波长耦合中的有用折射率降低到较低的值与保持表面波导结构内的光信号的限制相关联的值，从而减少沿着过渡区域的反射。

69. 发明授权

US06968110B2 CMOS-compatible integration of silicon-based optical devices with electronic devices 有权
标题翻译：硅基光学器件与电子器件的CMOS兼容集成
公开(公告)号：US06968110B2
公开(公告)日：2005-11-22
申请号：US10828898
申请日：2004-04-21
申请人： Vipulkumar Patel , Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery , Kalpendu Shastri , Soham Pathak , Katherine A. Yanushefski
发明人： Vipulkumar Patel , Margaret Ghiron , Prakash Gothoskar , Robert Keith Montgomery , Kalpendu Shastri , Soham Pathak , Katherine A. Yanushefski
IPC分类号： G02B6/12 , G02F1/025 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L27/146 , H01L31/12 , G02B6/10
CPC分类号： H01L27/14689 , G02B6/12004 , G02F1/025 , H01L21/84 , H01L27/1203 , H01L27/13 , H01L27/14636 , H01L27/14643 , H01L31/12
摘要： A conventional CMOS fabrication technique is used to integrate the formation of passive optical devices and active electro-optic devices with standard CMOS electrical devices on a common SOI structure. The electrical devices and optical devices share the same surface SOI layer (a relatively thin, single crystal silicon layer), with various required semiconductor layers then formed over the SOI layer. In some instances, a set of process steps may be used to simultaneously form regions in both electrical and optical devices. Advantageously, the same metallization process is used to provide electrical connections to the electrical devices and the active electro-optic devices.
摘要翻译：传统的CMOS制造技术被用于将无源光学器件和有源电光器件与标准CMOS电气器件的形成集成在公共SOI结构上。电子器件和光学器件共享相同的表面SOI层（相对薄的单晶硅层），然后在SOI层上形成各种所需的半导体层。在一些情况下，可以使用一组处理步骤来同时形成电和光学装置中的区域。有利地，使用相同的金属化工艺来提供到电气装置和主动电光装置的电连接。

70. 发明申请

US20050213873A1 Optical Crossover in thin silicon 审中-公开
标题翻译：光纤交叉在薄硅
公开(公告)号：US20050213873A1
公开(公告)日：2005-09-29
申请号：US11089478
申请日：2005-03-24
申请人： David Piede , Prakash Gothoskar , Margaret Ghiron , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
发明人： David Piede , Prakash Gothoskar , Margaret Ghiron , Robert Montgomery , Vipulkumar Patel , Soham Pathak , Kalpendu Shastri , Katherine Yanushefski
IPC分类号： G02B6/12 , G02B6/125
CPC分类号： G02B6/12004 , G02B6/125 , G02B2006/12061 , G02B2006/12097 , G02B2006/12104 , G02B2006/12176 , G02B2006/12195
摘要： An arrangement for providing optical crossovers between waveguides formed in an SOI-based structure utilize a patterned geometry in the SOI structure that is selected to reduce the effects of crosstalk in the area where the signals overlap. Preferably, the optical signals are fixed to propagate along orthogonal directions (or are of different wavelengths) to minimize the effects of crosstalk. The geometry of the SOI structure is patterned to include predetermined tapers and/or reflecting surfaces to direct/shape the propagating optical signals. The patterned waveguide regions within the optical crossover region may be formed to include overlying polysilicon segments to further shape the propagating beams and improve the coupling efficiency of the crossover arrangement.
摘要翻译：用于在基于SOI的结构中形成的波导之间提供光学交叉的装置利用SOI结构中的图案化几何形状，其被选择以减少信号重叠的区域中串扰的影响。优选地，光信号被固定以沿着正交方向（或不同波长）传播，以最小化串扰的影响。 SOI结构的几何形状被图案化以包括预定的锥形和/或反射表面以引导/形成传播的光学信号。光学交叉区域内的图案化波导区域可以形成为包括覆盖多晶硅段，以进一步使传播波束成形，并提高交叉布置的耦合效率。

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