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61. 发明授权

US06411543B1 Dynamic random access memory (RAM), semiconductor storage device, and semiconductor integrated circuit (IC) device 有权
公开(公告)号：US06411543B1
公开(公告)日：2002-06-25
申请号：US09755170
申请日：2001-01-08
申请人： Seiji Narui , Osamu Nagashima , Masatoshi Hasegawa , Hiroki Fujisawa , Shinichi Miyatake , Tsuyuki Suzuki , Yasunobu Aoki , Tsutom Takahashi , Kazuhiko Kajigaya
发明人： Seiji Narui , Osamu Nagashima , Masatoshi Hasegawa , Hiroki Fujisawa , Shinichi Miyatake , Tsuyuki Suzuki , Yasunobu Aoki , Tsutom Takahashi , Kazuhiko Kajigaya
IPC分类号： G11C1124
摘要： There is produced a first internal voltage having a difference relative to a power supply voltage, the difference being substantially equal to a threshold voltage of an address selection MOSFET of a dynamic memory cell. The first voltage is supplied to a sense amplifier as an operating voltage on a high-level side thereof. There is produced a second internal voltage having a predetermined difference relative to a circuit ground potential. The second voltage is supplied to the sense amplifier as an operating voltage on a low-level side thereof. A write signal having a high level corresponding to the first internal voltage and a low level corresponding to the second internal voltage is generated by a write amplifier to be transferred to a pair of complementary data lines connected to the dynamic memory cell. A high level, e.g., the power supply voltage representing a selection level and a low level, e.g., the circuit ground level indicating a non-selection level are supplied to a word line connected to the dynamic memory cell.

62. 发明授权

US06339344B1 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US06339344B1
公开(公告)日：2002-01-15
申请号：US09497280
申请日：2000-02-02
申请人： Takeshi Sakata , Hitoshi Tanaka , Osamu Nagashima , Masafumi Ohi , Sadayuki Morita
发明人： Takeshi Sakata , Hitoshi Tanaka , Osamu Nagashima , Masafumi Ohi , Sadayuki Morita
IPC分类号： H03K190175
CPC分类号： H03K19/018528
摘要： Differential amplifier circuits that receive input signals fed through external terminals are served with a first operation voltage and a second operation voltage through a first switching MOSFET and a second switching MOSFET, said first and second switching MOSFETs are turned on by a bias voltage-generating circuit when said input signal is near a central voltage of said first and second operation voltages, control voltages are formed to turn either said first switching MOSFET or said second switching MOSFET on and to turn the other one off to produce a corresponding output signal when the input signal continuously assumes said first voltage or said second voltage for a predetermined period of time, thereby to supply an input signal of a first amplitude corresponding to said first operation voltage and said second operation voltage as well as an input signal of a second amplitude corresponding to a predetermined intermediate voltage between said first operation voltage and said second operation voltage.
摘要翻译：接收通过外部端子馈送的输入信号的差分放大器电路通过第一开关MOSFET和第二开关MOSFET被提供第一工作电压和第二工作电压，所述第一和第二开关MOSFET由偏置电压产生电路当所述输入信号接近所述第一和第二操作电压的中心电压时，形成控制电压以使所述第一开关MOSFET或所述第二开关MOSFET导通，并将另一个断开以产生相应的输出信号，当输入信号连续地采取所述第一电压或所述第二电压预定的时间段，从而提供对应于所述第一操作电压和所述第二操作电压的第一幅度的输入信号以及对应于所述第一操作电压的第二幅度的输入信号所述第一操作电压和所述第二操作电压之间的预定中间电压工作电压。

63. 发明授权

US06212110B1 Semiconductor memory device 有权
标题翻译：半导体存储器件
公开(公告)号：US06212110B1
公开(公告)日：2001-04-03
申请号：US09471504
申请日：1999-12-23
申请人： Tatsuya Sakamoto , Osamu Nagashima , Riichiro Takemura
发明人： Tatsuya Sakamoto , Osamu Nagashima , Riichiro Takemura
IPC分类号： G11C700
CPC分类号： G11C11/4097 , G11C7/06 , G11C7/18 , G11C11/4091
摘要： Switch MOSFETS are interposed between a sense amplifier disposed in a dynamic RAM and complementary bit lines. After signal voltages were read out by the selecting operations of the word lines from a plurality of dynamic memory cells selected, to the plurality of pairs of complementary bit lines in accordance with their individual storage informations, the switch control signal of the switch MOSFETs is changed from a select level to a predetermined intermediate level. The switch MOSFETs, supplied with the intermediate potential at their gates, are turned ON as a result that sense nodes are set to one level in accordance with the amplifying operations of the sense amplifier. An amplification signal generated by the amplifying operation is transmitted through the column select circuit to input/output lines in response to the column select signal, and the switch control signal is returned from the intermediate potential level to the select level in response to the selecting operation of the column select circuit.
摘要翻译：开关MOSFETS插入设置在动态RAM中的读出放大器和互补位线之间。通过根据所选择的多个动态存储单元的字线的选择操作读出信号电压后，根据其各自的存储信息到多对互补位线，开关MOSFET的开关控制信号被改变从选择级别到预定中间级别。在其栅极处提供有中间电位的开关MOSFET被导通，结果是根据读出放大器的放大操作将感测节点设置为一个电平。通过放大运算产生的放大信号响应于列选择信号而通过列选择电路发送到输入/输出线，并且响应于选择操作将开关控制信号从中间电位电平返回到选择电平的列选择电路。

64. 发明授权

US5726930A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US5726930A
公开(公告)日：1998-03-10
申请号：US653236
申请日：1996-05-24
申请人： Masatoshi Hasegawa , Kazuhiko Kajigaya , Kan Takeuchi , Katsumi Matsuno , Osamu Nagashima
发明人： Masatoshi Hasegawa , Kazuhiko Kajigaya , Kan Takeuchi , Katsumi Matsuno , Osamu Nagashima
IPC分类号： G11C14/00 , G11C11/22 , G11C11/401 , G11C11/404 , H01L21/8242 , H01L27/10 , H01L27/108
CPC分类号： G11C11/22 , G11C11/404
摘要： A semiconductor memory device capable of simultaneously providing volatile and non-volatile portions is disclosed having a plurality of memory mats, and a plurality of plate electrodes and a plurality of memory mats each provided in one-to-one correspondence with the memory maps. The memory mats each include a plurality of word lines, a plurality of bit lines and a plurality of memory cells provided at the intersections of the word lines and the bit lines. The memory cells each include an information storage capacitor having a ferroelectric film, and an address selection MOSFET. The information storage capacitor has a pair of electrodes, one of which is connected to the plate electrode that corresponds to the memory mat in which the information storage capacitor is included. A first voltage or a second voltage is selectively applied to each of the plate electrodes according to data held in the memory circuit corresponding to the plate electrode. When the first voltage is applied to the plate electrode, the information storage capacitors connected to the plate electrode are made incapable of polarization reversal irrespective of a binary write signal given to the bit lines. When the second voltage is applied to the plate electrode, the information storage capacitors connected to the plate electrode are made capable of polarization inversion in response to a binary write signal given to the bit lines.
摘要翻译：公开了能够同时提供易失性和非易失性部分的半导体存储器件，其具有多个存储器垫，以及多个板电极和多个存储器垫，每个存储垫与存储器映射图一一对应地提供。存储器垫每个都包括多个字线，多个位线和设置在字线和位线的交点处的多个存储单元。存储单元各自包括具有铁电膜的信息存储电容器和地址选择MOSFET。信息存储电容器具有一对电极，其中一个电极连接到对应于包括信息存储电容器的存储器垫的平板电极。根据与平板电极相对应的存储电路中保存的数据，选择性地向每个平板电极施加第一电压或第二电压。当第一电压施加到平板电极时，连接到平板电极的信息存储电容器不会产生极化反转，而与给定位线的二进制写入信号无关。当第二电压施加到平板电极时，连接到平板电极的信息存储电容器响应于给定位线的二进制写入信号而能够进行极化反转。

65. 发明授权

US08755020B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US08755020B2
公开(公告)日：2014-06-17
申请号：US13556259
申请日：2012-07-24
申请人： Osamu Nagashima
发明人： Osamu Nagashima
IPC分类号： G02F1/1339
CPC分类号： G02F1/13394 , G02F1/1337 , G02F2001/133388 , G02F2001/13396
摘要： A region of the first substrate and the second substrate enclosed by a sealant is a rectangle. The rectangle includes a central region, a pair of first regions between which the central region is interposed in a major-axis direction of the rectangle, a pair of second regions between which the central region is interposed in a minor-axis direction of the rectangle, and a peripheral region that surrounds the central region, the pair of first regions, and the pair of second regions. The spacers are disposed in the central region and the peripheral region except the pair of first regions and the pair of second regions. In the peripheral region, a width from each of the first regions to one long side of the rectangle in an outward direction is larger than a width from one of the second regions to the one long side in the outward direction.
摘要翻译：由密封剂包围的第一基板和第二基板的区域是矩形。矩形包括中心区域，一对第一区域，中心区域在矩形的长轴方向插入中间区域，一对第二区域，中心区域在矩形的短轴方向上插入以及围绕中心区域，一对第一区域和一对第二区域的周边区域。间隔物设置在中心区域和除一对第一区域和一对第二区域之外的周边区域。在周边区域中，沿着向外方向的矩形的每个第一区域到一个长边的宽度大于从向外方向的第二区域中的一个到一个长边侧的宽度。

66. 发明授权

US08709633B2 Battery loading and unloading mechanism 有权
标题翻译：电池装卸机构
公开(公告)号：US08709633B2
公开(公告)日：2014-04-29
申请号：US11722917
申请日：2005-12-22
申请人： Takayoshi Yamasaki , Hiroaki Sato , Toshiaki Ueda , Tomonori Watanabe , Yoichi Miyajima , Osamu Nagashima , Mieko Hara
发明人： Takayoshi Yamasaki , Hiroaki Sato , Toshiaki Ueda , Tomonori Watanabe , Yoichi Miyajima , Osamu Nagashima , Mieko Hara
IPC分类号： H01M2/10 , H01M2/00
CPC分类号： H01M2/1066 , H01M2/1022 , H01M2/1061 , H01M2/342 , H01M10/4221 , H01M2220/30
摘要： In a battery loading and unloading mechanism, a battery formed in a flat rectangular parallelepiped and having an almost square main surface is loaded and unloaded to and from a device. The battery is formed with projecting portions at longitudinal both ends of a back surface thereof and along the back surface, whereby the battery can be prevented from being erroneously inserted into the device. The projecting portion has an inclined surface acutely inclined with respect to the back surface, and when the battery is unloaded from the device, unloading of the battery from the device is accelerated by the inclined surface undergoing contact pressure of the retaining means. The device is formed with a notched portion which is adapted to expose the other projecting portion of the battery when the battery is loaded, therebyfacilitating unloading of the battery.
摘要翻译：在电池装载和卸载机构中，形成为平坦的长方体并且具有几乎正方形的主表面的电池被装载和卸载到设备上。电池在其后表面的纵向两端并且沿着后表面形成有突出部分，由此可以防止电池错误地插入到装置中。突出部具有相对于后表面急剧倾斜的倾斜表面，并且当电池从装置卸载时，通过保持装置的接触压力的倾斜表面加速电池从装置的卸载。该装置形成有凹槽部分，该凹口部分在电池装载时适于露出电池的另一个突出部分，从而有助于电池的卸载。

67. 发明授权

US08451409B2 Liquid crystal display device and manufacturing method for same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08451409B2
公开(公告)日：2013-05-28
申请号：US13592973
申请日：2012-08-23
申请人： Hideyuki Shintani , Shinichi Soto , Hiroshi Saeki , Osamu Nagashima , Tomokazu Ishikawa
发明人： Hideyuki Shintani , Shinichi Soto , Hiroshi Saeki , Osamu Nagashima , Tomokazu Ishikawa
IPC分类号： G02F1/1337 , G02F1/1339 , G02F1/1345 , G02F1/13
CPC分类号： G02F1/133784 , G02F2201/121 , G02F2201/122
摘要： A liquid crystal display device includes a first substrate, a second substrate, liquid crystal disposed between the first substrate and the second substrate, an electrode formed over the first substrate, and an alignment film disposed between the electrode and the liquid crystal. The electrode has a pad portion that protrudes from at least part of a side of the electrode and electrically leads out onto the first substrate through a conductive material that is located between the second substrate and the first substrate, and a direction in which at least one side of the pad portion which protrudes from the electrode is set to angle of 15° or more and 35° or less relative to a side of the first substrate which crosses the extended line of the at least one side of the pad portion.
摘要翻译：液晶显示装置包括第一基板，第二基板，设置在第一基板和第二基板之间的液晶，形成在第一基板上的电极以及设置在电极和液晶之间的取向膜。电极具有从电极的至少一部分突出的焊盘部分，并且通过位于第二基板和第一基板之间的导电材料电导出到第一基板上，并且至少一个从电极突出的焊盘部的侧面相对于与焊盘部的至少一侧的延伸线交叉的第一基板的一侧被设定为15°以上且35°以下的角度。

68. 发明申请

US20110287306A1 BATTERY LOADING AND UNLOADING MECHANISM 有权
标题翻译：电池负载和卸载机制
公开(公告)号：US20110287306A1
公开(公告)日：2011-11-24
申请号：US13116916
申请日：2011-05-26
申请人： Takayoshi Yamasaki , Hiroaki Sato , Toshiaki Ueda , Tomonori Watanabe , Yoichi Miyajima , Osamu Nagashima , Mieko Hara
发明人： Takayoshi Yamasaki , Hiroaki Sato , Toshiaki Ueda , Tomonori Watanabe , Yoichi Miyajima , Osamu Nagashima , Mieko Hara
IPC分类号： H01M2/02
CPC分类号： H01M2/1066 , H01M2/1022 , H01M2/1061 , H01M2/342 , H01M10/4221 , H01M2220/30
摘要： In a battery loading and unloading mechanism, a battery formed in a flat rectangular parallelepiped and having an almost square main surface is loaded and unloaded to and from a device. The battery is formed with projecting portions at longitudinal both ends of a back surface thereof and along the back surface, whereby the battery can be prevented from being erroneously inserted into the device. The projecting portion has an inclined surface acutely inclined with respect to the back surface, and when the battery is unloaded from the device, unloading of the battery from the device is accelerated by the inclined surface undergoing contact pressure of the retaining means. The device is formed with a notched portion which is adapted to expose the other projecting portion of the battery when the battery is loaded, thereby facilitating unloading of the battery.
摘要翻译：在电池装载和卸载机构中，形成为平坦的长方体并且具有几乎正方形的主表面的电池被装载和卸载到设备上。电池在其后表面的纵向两端并且沿着后表面形成有突出部分，由此可以防止电池错误地插入到装置中。突出部具有相对于后表面急剧倾斜的倾斜表面，并且当电池从装置卸载时，通过保持装置的接触压力的倾斜表面加速电池从装置的卸载。该装置形成有凹槽部分，该凹口部分在电池装载时适于露出电池的另一个突出部分，从而有助于电池的卸载。

69. 外观设计

USD646222S1 Battery 有权
公开(公告)号：USD646222S1
公开(公告)日：2011-10-04
申请号：US29371527
申请日：2011-04-04
申请人： Shouji Tatehata , Atsuhiro Kumagai , Osamu Nagashima
设计人： Shouji Tatehata , Atsuhiro Kumagai , Osamu Nagashima

70. 发明申请

US20110163726A1 BATTERY PACK, CHARGING APPARATUS, AND CHARGING SYSTEM 审中-公开
标题翻译：电池组，充电装置和充电系统
公开(公告)号：US20110163726A1
公开(公告)日：2011-07-07
申请号：US12977168
申请日：2010-12-23
申请人： Osamu Nagashima , Yoichi Miyajima , Shoichi Shintani , Jiro Moriya
发明人： Osamu Nagashima , Yoichi Miyajima , Shoichi Shintani , Jiro Moriya
IPC分类号： H02J7/04 , G01R31/36
CPC分类号： H02J7/0004 , H02J7/008
摘要： A battery pack includes a battery cell, a charge calculator that calculates an amount of charge of the battery cell, a charge setting that sets multiple amounts of charge with different upper limits, a charge selecting switch that selects one of the amounts of charge, and a battery controller having a communication function that sends, to the charging apparatus, charge information about the battery cell and charging command information that instructs charging to be continued to an upper limit for the selected amount of charge.
摘要翻译：电池组包括电池单元，计算电池单元的充电量的充电计算器，设定具有不同上限的多个电荷的充电设置，选择充电量之一的充电选择开关，以及具有通信功能的电池控制器，其向充电装置发送关于电池单元的充电信息，以及指示充电的充电命令信息继续到所选择的充电量的上限。

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