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61. 发明授权

US06790696B1 Providing an organic vertical cavity laser array device with etched region in dielectric stack 失效
标题翻译：在电介质堆叠中提供具有蚀刻区域的有机垂直腔激光器阵列器件
公开(公告)号：US06790696B1
公开(公告)日：2004-09-14
申请号：US10609922
申请日：2003-06-30
申请人： Keith B. Kahen
发明人： Keith B. Kahen
IPC分类号： H01L2100
CPC分类号： H01S5/183 , H01S5/0201 , H01S5/36 , H01S5/423
摘要： A method of making an organic vertical cavity laser array device includes providing a substrate and a first portion of a bottom dielectric stack reflective to light over a predetermined range of wavelengths and being disposed over the substrate; forming an etched region in the top surface of the first portion of the bottom dielectric stack to define an array of spaced laser pixels which have higher reflectance than the interpixel regions so that the array emits laser light; and forming a second portion of the bottom dielectric stack over the etched first portion. The method also includes forming an active region over the second portion of the bottom dielectric stack for producing laser light, and forming a top dielectric stack over the active region and spaced from the bottom dielectric stack and reflective to light over a predetermined range of wavelengths.
摘要翻译：一种制造有机垂直腔激光器阵列器件的方法包括提供反射到预定波长范围上的光的衬底和底部电介质叠层的第一部分，并设置在衬底上; 在所述底部电介质堆叠的所述第一部分的顶表面中形成蚀刻区域以限定具有比所述像素间区域更高的反射率的间隔开的激光像素的阵列，使得所述阵列发射激光; 以及在所述蚀刻的第一部分上形成所述底部电介质叠层的第二部分。该方法还包括在底部电介质堆叠的第二部分上形成有源区域，用于产生激光，以及在有源区域上形成顶部电介质堆叠并与底部电介质叠层隔开并在预定波长范围内反射。

62. 发明授权

US06545409B2 Organic light-emitting diode with high contrast ratio 有权
公开(公告)号：US06545409B2
公开(公告)日：2003-04-08
申请号：US09853023
申请日：2001-05-10
申请人： Keith B. Kahen
发明人： Keith B. Kahen
IPC分类号： H01J162
CPC分类号： H01L51/5284 , H01L51/005 , H01L51/0059 , H01L51/0081 , H01L51/5231
摘要： An organic light-emitting diode includes a transparent substrate, a transparent anode layer disposed over the substrate, and a hole-transport layer disposed over the anode layer. The diode also includes a light-emitting layer disposed over the hole-transport layer, an electron-transport layer disposed over the light-emitting layer, a cathode disposed over the electron-transport layer and having a thickness selected so that light can pass through such cathode, and a light-absorbing layer disposed over the cathode. A dielectric spacer layer disposed over the light-absorbing layer and a conductive layer disposed over the spacer layer and electrically connected to the cathode so that when a voltage is applied between the transparent anode and the cathode, the light-emitting layer produces light which passes directly through the hole-transport layer and the transparent anode and substrate.

63. 发明授权

US5212703A Surface emitting lasers with low resistance bragg reflectors 失效
标题翻译：具有低电阻布拉格反射器的表面发射激光器
公开(公告)号：US5212703A
公开(公告)日：1993-05-18
申请号：US836569
申请日：1992-02-18
申请人： Keith B. Kahen
发明人： Keith B. Kahen
IPC分类号： H01S5/00 , H01S5/183 , H01S5/223
CPC分类号： H01S5/18361 , H01S5/18305 , H01S5/3211
摘要： A vertical cavity surface emitting laser is disclosed including a lower cladding layer of a particular conductivity type deposited on the semiconductor substrate, having multiple periods of semiconductor layers of varying index cf refraction so deposited as to form a .lambda./2 Bragg reflector; and an upper cladding layer of opposite conductivity type having multiple periods of semiconductor layers of varying index of refraction so deposited as to form a multilayer reflector.

64. 发明授权

US5007063A Laser diode 失效
标题翻译：激光二极管
公开(公告)号：US5007063A
公开(公告)日：1991-04-09
申请号：US478856
申请日：1990-02-12
申请人： Keith B. Kahen
发明人： Keith B. Kahen
IPC分类号： H01S5/06 , H01S5/062 , H01S5/20 , H01S5/34 , H01S5/343
CPC分类号： B82Y20/00 , H01S5/0601 , H01S5/20 , H01S5/34 , H01S5/06236 , H01S5/2059 , H01S5/3432
摘要： The present invention relates to a laser diode which comprises a substantially rectangular body of a semiconductor material on the surface of a semiconductor substrate. The body has a pair of opposed end surfaces and side surfaces extending between the end surfaces. The body comprises a multiple quantum well active layer between cladding layers. An electrically insulating (separation) region extends through one of the cladding layers and through the active region to divide the body into a laser diode in which light is generated in the active layer by the recombination of oppositely charged carriers, and an absorber which can shift the generated light between the TE and TM modes when a small voltage is applied thereacross. A capping layer of an insulating semiconductor material is over the outermost cladding layer and conductive regions extend through the capping layer to the cladding layer in each of the laser diode and the absorber.
摘要翻译：本发明涉及一种激光二极管，其包括在半导体衬底的表面上的半导体材料的基本矩形的主体。主体具有一对相对的端面和在端面之间延伸的侧表面。主体包括在包层之间的多量子阱活性层。电绝缘（分离）区域延伸穿过包层中的一个并且穿过有源区域，以将主体分成激光二极管，其中通过相反电荷的载流子的复合在有源层中产生光，并且能够移位的吸收体当施加小电压时，在TE和TM模式之间产生的光。绝缘半导体材料的覆盖层在最外层包层之上，并且导电区域延伸穿过覆盖层到激光二极管和吸收体中的每一个中的包覆层。

65. 发明授权

US4995049A Optoelectronic integrated circuit 失效
标题翻译：光电集成电路
公开(公告)号：US4995049A
公开(公告)日：1991-02-19
申请号：US529830
申请日：1990-05-29
申请人： Keith B. Kahen , Gopalan Rajeswaran
发明人： Keith B. Kahen , Gopalan Rajeswaran
IPC分类号： H01L27/15 , H01S5/026
CPC分类号： H01L27/15 , H01S5/0264
摘要： The present invention relates to an optoelectronic integrated circuit which includes a body of a group III-V semiconductor material containing a laser diode, a photodiode and/or field effect transistors. The body includes isolation regions extending partially therethrough which electrically isolate the laser diode from the photodiode and the field effect transistors. However, the isolation regions are at least partially transparent to light so as to allow some of the light generated by the laser diode to reach the photodiode. The laser diode, photodiode and/or field effect transistors are electrically connected by conductive patterns on the body so as to form a desired circuit for controlling the laser diode. The body defines a laser diode having a multiple quantum well active layer sandwiched between two cladding layers. The photodiode may also be formed by the active layer and cladding layers or can be formed by filling a trench in the body with a semiconductor material. The field effect transistor is formed in an insulated cap layer of undoped gallium arsenide on one of the cladding layers.
摘要翻译：本发明涉及一种光电子集成电路，其包括含有激光二极管的III-V族半导体材料的主体，光电二极管和/或场效应晶体管。主体包括部分延伸穿过其中的隔离区域，其将激光二极管与光电二极管和场效应晶体管电隔离。然而，隔离区域对于光至少部分透明，以便允许由激光二极管产生的一些光到达光电二极管。激光二极管，光电二极管和/或场效应晶体管通过主体上的导电图案电连接，以形成用于控制激光二极管的期望电路。本体定义了一个夹在两个包层之间的具有多量子阱活性层的激光二极管。光电二极管也可以由有源层和包层形成，或者可以通过用半导体材料填充主体中的沟槽来形成。场效应晶体管形成在一个包覆层上的未掺杂砷化镓的绝缘盖层中。

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