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61. 发明申请

US20130067141A1 DATA WRITING METHOD, AND MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS USING THE SAME 有权
标题翻译：数据写入方法，以及使用该存储器的存储器控制器和存储器存储装置
公开(公告)号：US20130067141A1
公开(公告)日：2013-03-14
申请号：US13323812
申请日：2011-12-12
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/1032 , G11C16/349 , G11C29/82
摘要： A data writing method for a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of lower physical pages and a plurality of upper physical pages respectively corresponding to the lower physical pages. The method includes determining whether a physical page is one of the upper physical pages before writing first data into the physical page; determining whether a backup area stores second data written into one of the lower physical pages corresponding to the physical page if the physical page is the upper physical page; reading the second data from the lower physical page corresponding to the physical page and backing up the second data into the backup area before writing the first data into the physical page when the backup area does not store the second data. Accordingly, the method may effectively prevent data loss due to a program failure.
摘要翻译：提供了一种用于可重写非易失性存储器模块的数据写入方法。可重写非易失性存储器模块具有分别对应于下部物理页面的多个下部物理页面和多个上部物理页面。该方法包括在将第一数据写入物理页之前确定物理页是物理页之一; 如果所述物理页面是所述物理页面，则确定备份区域是否存储写入与所述物理页面对应的所述下部物理页面之一的第二数据; 在备份区域不存储第二数据时，将第一数据写入物理页面之前，从与物理页面对应的物理页面读取第二数据并将第二数据备份到备份区域中。因此，该方法可以有效地防止由于程序故障导致的数据丢失。

62. 发明授权

US08386699B2 Method for giving program commands to flash memory for writing data according to a sequence, and controller and storage system using the same 有权
标题翻译：用于将程序命令给予用于根据序列写入数据的闪存的方法，以及使用其的控制器和存储系统
公开(公告)号：US08386699B2
公开(公告)日：2013-02-26
申请号：US12580062
申请日：2009-10-15
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F12/0246 , G06F3/0611 , G06F3/0659 , G06F3/0679 , G06F2212/7203
摘要： A method for giving program commands to a flash memory chip is provided, the method is suitable for writing data from a host system into the flash memory chip. In the present method, a plurality of host write commands and data corresponding to the host write commands are received from the host system by using a native command queuing (NCQ) protocol, and cache program commands are gived to the flash memory chip to write the data into the flash memory chip. Accordingly, the time for executing the host write commands is effectively shortened by writing the data through the cache program commands and the NCQ protocol.
摘要翻译：提供了向闪存芯片提供程序命令的方法，该方法适用于将数据从主机系统写入闪存芯片。在本方法中，通过使用本机命令排队（NCQ）协议从主机系统接收到与主机写入命令对应的多个主机写入命令和数据，并且向闪存芯片提供高速缓存程序命令以写入数据进入闪存芯片。因此，通过高速缓存程序命令和NCQ协议写入数据来有效地缩短执行主机写命令的时间。

63. 发明申请

US20130019049A1 BLOCK MANAGEMENT METHOD, MEMORY CONTROLLER AND MEMORY STOARGE APPARATUS 有权
标题翻译：块管理方法，存储控制器和存储器设备
公开(公告)号：US20130019049A1
公开(公告)日：2013-01-17
申请号：US13233034
申请日：2011-09-15
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246
摘要： A block management method for a rewritable non-volatile memory module having a plurality of physical blocks, and a memory controller and memory storage apparatus using the same are provided. The method includes logically grouping the physical blocks at least into a data area, a free area and a replacement area and configuring a plurality of logical blocks for mapping to the physical blocks of the data area. The method also includes assigning bad physical blocks into the data area and marking the logical blocks mapping to the bad physical blocks as bad logical addresses, thereby forbidding the access of the logical blocks mapping to the bad physical blocks. According, the method can effectively use the rewritable non-volatile memory module having too many bad physical blocks to store data.
摘要翻译：提供一种具有多个物理块的可重写非易失性存储器模块的块管理方法，以及使用该块管理方法的存储器控制器和存储器存储装置。所述方法包括将所述物理块至少逻辑地分组到数据区域，空闲区域和替换区域中，并且配置多个逻辑块以映射到数据区域的物理块。该方法还包括将不良物理块分配给数据区域，并将映射到不良物理块的逻辑块标记为不良逻辑地址，从而禁止映射到不良物理块的逻辑块的访问。该方法可以有效地使用具有太多不良物理块的可重写非易失性存储器模块来存储数据。

64. 发明申请

US20120317346A1 DATA STORING METHOD, AND MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS USING THE SAME 有权
标题翻译：数据存储方法，以及使用其的存储器控制器和存储器存储装置
公开(公告)号：US20120317346A1
公开(公告)日：2012-12-13
申请号：US13587923
申请日：2012-08-17
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F2212/7202
摘要： A data storing method for a rewritable non-volatile memory module is provided. The method includes receiving page data to be stored in a first logical address. The method also includes determining whether a storage status of the rewritable non-volatile memory module is a predetermined status; if yes, using a first writing mode to write the page data into the rewritable non-volatile memory module; if no, using a second writing mode to write the page data into the rewritable non-volatile memory module. In the first writing mode, lower physical program units of the rewritable non-volatile memory module are applied for writing data, and upper physical program units of the rewritable non-volatile memory module are not applied for writing data; in the second writing mode, the upper physical program units and the lower physical program units are applied for writing data.
摘要翻译：提供了一种用于可重写非易失性存储器模块的数据存储方法。该方法包括接收要存储在第一逻辑地址中的页面数据。该方法还包括确定可重写非易失性存储器模块的存储状态是否是预定状态; 如果是，使用第一写入模式将页面数据写入可重写非易失性存储器模块; 如果否，则使用第二写入模式将页面数据写入可重写非易失性存储器模块。在第一写入模式中，应用可重写非易失性存储器模块的较低物理程序单元来写入数据，并且不将可重写非易失性存储器模块的较高物理程序单元应用于写入数据; 在第二写入模式中，应用上层物理程序单元和下部物理程序单元来写入数据。

65. 发明申请

US20120278535A1 DATA WRITING METHOD, MEMORY CONTROLLER, AND MEMORY STORAGE APPARATUS 有权
标题翻译：数据写入方法，存储器控制器和存储器存储器
公开(公告)号：US20120278535A1
公开(公告)日：2012-11-01
申请号：US13183470
申请日：2011-07-15
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F11/1435 , G06F11/2094 , G06F2212/1032 , G06F2212/7202 , G06F2212/7209
摘要： A data writing method for writing data belonging to a logical page into a rewritable non-volatile memory module is provided. In the data writing method, a mark count value is set for each logical page. Whether the mark count value corresponding to the logical page is greater than a predetermined threshold is determined If the mark count value corresponding to the logical page is not greater than the predetermined threshold, the mark count value corresponding to the logical page is counted, and the data and the mark count value corresponding to the logical page are written into a first storage area or a second storage area. Otherwise, the data and the mark count value corresponding to the logical page are written into the second storage area. Thereby, data stored in the rewritable non-volatile memory module can be effectively identified and data loss caused by power failure can be avoided.
摘要翻译：提供一种将属于逻辑页面的数据写入可重写非易失性存储器模块的数据写入方法。在数据写入方法中，为每个逻辑页面设置标记计数值。确定与逻辑页对应的标记计数值是否大于预定阈值如果与逻辑页对应的标记计数值不大于预定阈值，则对与逻辑页对应的标记计数值进行计数，对应于逻辑页面的数据和标记计数值被写入第一存储区域或第二存储区域。否则，将对应于逻辑页面的数据和标记计数值写入第二存储区域。从而，可以有效地识别存储在可重写非易失性存储器模块中的数据，并且可以避免由电源故障引起的数据丢失。

66. 发明申请

US20120254511A1 MEMORY STORAGE DEVICE, MEMORY CONTROLLER, AND DATA WRITING METHOD 有权
标题翻译：内存存储设备，存储控制器和数据写入方法
公开(公告)号：US20120254511A1
公开(公告)日：2012-10-04
申请号：US13111959
申请日：2011-05-20
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F11/073 , G06F11/0766 , G06F11/1048 , G06F11/1435 , G06F11/2094 , G06F2212/7201
摘要： A memory storage device, a memory controller, and a data writing method are provided. The memory storage device has a rewritable non-volatile memory chip including a plurality of physical units, and each of the physical units has a plurality of physical pages. The data writing method includes configuring a plurality of logical units to be mapped to a portion of the physical units, and each of the logical unit has a plurality of logical pages. The data writing method also includes receiving a first write data from a host system and writing the first write data into the ith physical page in a substitute physical unit selected from the physical units. The data writing method further includes writing a first address access information corresponding to the first write data and a second address access information into the ith physical page. Herein i is a positive integer.
摘要翻译：提供了存储器存储设备，存储器控制器和数据写入方法。存储器存储装置具有包括多个物理单元的可重写非易失性存储器芯片，并且每个物理单元具有多个物理页面。数据写入方法包括配置要映射到物理单元的一部分的多个逻辑单元，并且每个逻辑单元具有多个逻辑页。数据写入方法还包括从主机系统接收第一写入数据并将第一写入数据写入从物理单元中选择的替代物理单元中的第i个物理页。数据写入方法还包括将与第一写入数据相对应的第一地址访问信息和第二地址访问信息写入第i个物理页面。这里我是一个正整数。

67. 发明授权

US08250286B2 Block management method, and storage system and controller using the same 有权
标题翻译：块管理方法，以及存储系统和控制器的使用方法
公开(公告)号：US08250286B2
公开(公告)日：2012-08-21
申请号：US12259829
申请日：2008-10-28
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/08
CPC分类号： G06F12/0246 , G06F2212/7202 , G11C2211/5641
摘要： A block management method for managing a multi level cell (MLC) NAND flash memory is provided, wherein the MLC NAND flash memory has a plurality of physical blocks grouped into at least a data area and a spare area, each of the physical blocks has a plurality of pages divided into a plurality of upper pages, and a plurality of lower pages with a writing speed thereof being greater than that of the upper pages. The block management method includes configuring a plurality of logical blocks for being accessed by a host, recording the logical block belonging to a frequently accessed block and executing a special mode to use the lower pages of at least two physical blocks of the MLC NAND flash memory for storing data of one logical block belonging to the frequently accessed block. Accordingly, it is possible to increase the access speed of a storage system.
摘要翻译：提供了一种用于管理多级单元（MLC）NAND闪速存储器的块管理方法，其中MLC NAND闪速存储器具有分组为至少数据区域和备用区域的多个物理块，每个物理块具有被分成多个上部页的多个页面以及其写入速度大于上部页面的多个下部页面。块管理方法包括配置由主机访问的多个逻辑块，记录属于频繁访问块的逻辑块，并执行特殊模式以使用MLC NAND闪速存储器的至少两个物理块的下页用于存储属于经常访问的块的一个逻辑块的数据。因此，可以提高存储系统的访问速度。

68. 发明申请

US20120131263A1 MEMORY STORAGE DEVICE, MEMORY CONTROLLER THEREOF, AND METHOD FOR RESPONDING HOST COMMAND 有权
标题翻译：存储器存储器，其存储器控制器以及用于响应主机命令的方法
公开(公告)号：US20120131263A1
公开(公告)日：2012-05-24
申请号：US12976989
申请日：2010-12-22
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/7203
摘要： A memory storage device, a memory controller thereof, and a method for responding host commands are provided. The memory storage device has a flash memory chip and a buffer memory. The present method includes receiving a write command issued by a host system and determining whether the write command causes the memory storage device to trigger a data moving procedure. If the write command does not cause the memory storage device to trigger the data moving procedure, the present method further includes sending an acknowledgement message corresponding to the write command to the host system after data corresponding to the write command is completely transferred to the buffer memory.
摘要翻译：提供了存储器存储设备，其存储器控制器以及用于响应主机命令的方法。存储器存储装置具有闪存芯片和缓冲存储器。本方法包括接收由主机系统发出的写入命令，并确定写入命令是否使存储器存储设备触发数据移动过程。如果写入命令不使存储器存储设备触发数据移动过程，则本方法还包括在对应于写入命令的数据被完全传送到缓冲存储器之后，向主机系统发送与写入命令相对应的确认消息。

69. 发明申请

US20120110300A1 DATA MANAGEMENT METHOD, MEMORY CONTROLLER AND MEMORY STORAGE APPARATUS 有权
标题翻译：数据管理方法，存储器控制器和存储器存储器
公开(公告)号：US20120110300A1
公开(公告)日：2012-05-03
申请号：US13030147
申请日：2011-02-18
申请人： Chih-Kang Yeh
发明人： Chih-Kang Yeh
IPC分类号： G06F12/06
CPC分类号： G06F12/0246
摘要： A data management method, a memory controller and a memory storage apparatus are provided. The method includes grouping physical units of a rewritable non-volatile memory module into at least a data area and a free area. The method also includes configuring logical units for mapping to the physical units of the data area and writing update data belonging to the logical pages of the logical units orderly into the physical pages of physical units gotten from the free area. The method further includes configuring root units for the logical pages, configuring an entry chain for each of the root units and building entries on the entry chains for recording update information of the updated logical pages, wherein each of the logical pages corresponds to a root unit. Accordingly, the table size for storing the update information is effectively reduced and the time for searching valid data is effectively shortened.
摘要翻译：提供了数据管理方法，存储器控制器和存储器存储装置。该方法包括将可重写非易失性存储器模块的物理单元分组成至少数据区域和自由区域。该方法还包括配置用于映射到数据区的物理单元的逻辑单元，并将属于逻辑单元的逻辑单元的更新数据有序地写入从空闲区域获得的物理单元的物理页面。该方法还包括配置逻辑页面的根单元，为每个根单元配置入口链，并在入口链上建立条目以记录更新的逻辑页的更新信息，其中每个逻辑页对应于根单元。因此，有效地减少用于存储更新信息的表格大小，有效缩短搜索有效数据的时间。

70. 发明授权

US07954019B2 Flash storage device and method and system for testing the same 有权
标题翻译： Flash存储设备及其测试方法和系统
公开(公告)号：US07954019B2
公开(公告)日：2011-05-31
申请号：US12369284
申请日：2009-02-11
申请人： Ban-Hui Chen , Chih-Kang Yeh
发明人： Ban-Hui Chen , Chih-Kang Yeh
IPC分类号： G11C29/00 , G11C16/04
CPC分类号： G11C29/48 , G11C16/04 , G11C29/02 , G11C29/022 , G11C29/1201 , G11C2029/0401
摘要： A flash storage device and a testing method and a testing system for the flash storage device are provided. The testing system includes a testing apparatus and the flash storage device. The flash storage device includes a controller, a flash memory module, a plurality of peripheral pins and at least one test pin. The flash storage device receives an enable signal transmitted from the testing apparatus through the test pin. Subsequently, the controller outputs a signal to the testing apparatus through each peripheral pin based to the enable signal. Finally, the testing apparatus verifies the signal outputted by each peripheral pin.
摘要翻译：提供闪存存储装置以及用于闪存存储装置的测试方法和测试系统。测试系统包括测试设备和闪存设备。闪存存储设备包括控制器，闪存模块，多个外设引脚和至少一个测试引脚。闪存存储装置通过测试引脚接收从测试装置发送的使能信号。随后，控制器根据使能信号通过每个外设引脚向测试装置输出一个信号。最后，测试装置验证每个外设引脚输出的信号。

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