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    • 62. 发明授权
    • Electrophotographic toner composition comprising polymers having
specified molecular weights
    • 包含具有特定分子量的聚合物的电子照相调色剂组合物
    • US4917984A
    • 1990-04-17
    • US230530
    • 1988-08-10
    • Jun Saito
    • Jun Saito
    • G03G9/087G03G9/08
    • G03G9/08711G03G9/08795Y10S430/105
    • An electrophotographic toner composition consisting essentially of a binder resin and a dye or pigment, said binder resin being a polymer synthesized from a vinylic monomer and satisfying the conditions represented by the following expressions10.sup.3 .ltoreq.Mp.ltoreq.2.times.10.sup.4,andS.sub.1 :S.sub.2 :S.sub.3 :S.sub.4 =(0.3.about.0.8):1:(0.5.about.1):(0.7.about.1.2)in which the symbols have the following meanings in the molecular weight distribution of the polymer measured by gel permeation chromatography,Mp is a molecular weight of the polymer which shows a peak value in the chromatogram,S.sub.1 is a weight fraction of molecules having a molecular weight of from 0 to 3,000,S.sub.2 is a weight fraction of molecules having a molecular weight of from more than 3,000 to 13,000,S.sub.3 is a weight fraction of molecules having a molecular weight of from more than 13,000 to 50,000, andS.sub.4 is a weight fraction of molecules having a molecular weight of more than 50,000.
    • 一种基本上由粘合剂树脂和染料或颜料组成的电子照相调色剂组合物,所述粘合剂树脂是由乙烯基单体合成并满足下列表达式103表示的条件:Mp = 2x104,S1:S2 :S3:S4 =(0.3差异0.8):1:(0.5差1):( 0.7差异1.2)其中符号在通过凝胶渗透色谱法测定的聚合物的分子量分布中具有以下含义,Mp是分子 在色谱图中显示峰值的聚合物的重量,S1是分子量为0至3,000的分子的重量分数,S2是分子量大于3,000至13,000的分子的重量分数,S3 是分子量超过13,000至50,000的分子的重量分数,S4是分子量大于50,000的分子的重量分数。
    • 63. 发明授权
    • Insulated-gate bipolar transistor
    • 绝缘栅双极晶体管
    • US09425271B2
    • 2016-08-23
    • US14002752
    • 2012-03-07
    • Jun SaitoSatoru Machida
    • Jun SaitoSatoru Machida
    • H01L29/423H01L29/739H01L29/10H01L29/06H01L29/08
    • H01L29/423H01L29/0619H01L29/0623H01L29/0696H01L29/0847H01L29/1095H01L29/4238H01L29/7395H01L29/7397
    • In an IGBT, a trench extending in a bent shape to have a corner is formed in an upper surface of a semiconductor substrate. The inside of the trench is covered with an insulating film. A gate is placed inside the trench. An emitter and a collector are formed on an upper surface and a lower surface of the semiconductor substrate, respectively. An emitter region, a body region, a drift region, and a collector region are formed in the semiconductor substrate. The emitter region is formed of an n-type semiconductor, is in contact with the insulating film, and is in ohmic contact with the emitter electrode. The body region is formed of a p-type semiconductor, is in contact with the insulating film below the emitter region, is in contact with the insulating film of an inner corner portion of the trench, and is in ohmic contact with the emitter electrode.
    • 在IGBT中,在半导体基板的上表面形成有以弯曲形状延伸成具有角部的沟槽。 沟槽的内部覆盖有绝缘膜。 一个门被放置在沟槽内。 分别在半导体衬底的上表面和下表面上形成发射极和集电极。 在半导体衬底中形成发射极区域,体区域,漂移区域和集电极区域。 发射极区由n型半导体形成,与绝缘膜接触,与发射电极欧姆接触。 体区域由p型半导体形成,与发射极区域下方的绝缘膜接触,与沟槽的内角部分的绝缘膜接触,并与发射极电极欧姆接触。
    • 64. 发明授权
    • Semiconductor device
    • 半导体器件
    • US09100000B2
    • 2015-08-04
    • US13560194
    • 2012-07-27
    • Jun SaitoMasuhisa Hirose
    • Jun SaitoMasuhisa Hirose
    • H03K17/00H01L29/40H01L29/739H01L29/861H01L29/06H01L29/10
    • H03K17/00H01L29/0615H01L29/063H01L29/0638H01L29/0692H01L29/1095H01L29/402H01L29/404H01L29/7397H01L29/8611
    • A semiconductor device may be provided with a semiconductor substrate, an insulating film disposed on a surface of the semiconductor substrate, at least one electrode disposed on a surface of the insulating film, and a voltage applying circuit configured to apply a first voltage to the at least one electrode. The semiconductor substrate may be provided with a cell region and a non-cell region adjacent to the cell region. The cell region is provided with a semiconductor element, and the non-cell region is provided with a withstand voltage structure. The insulating film may be disposed on a surface of the non-cell region. The at least one electrode may be electrically insulated from the semiconductor substrate. The voltage applying circuit may apply the first voltage to the electrode during at least a part of a first period in which a second voltage is not applied to the semiconductor element.
    • 半导体器件可以设置有半导体衬底,设置在半导体衬底的表面上的绝缘膜,设置在绝缘膜的表面上的至少一个电极,以及施加电压的电压施加电路, 至少一个电极。 半导体衬底可以设置有与单元区域相邻的单元区域和非单元区域。 电池区域设置有半导体元件,并且非电池区域设置有耐压结构。 绝缘膜可以设置在非电池区域的表面上。 所述至少一个电极可以与半导体衬底电绝缘。 电压施加电路可以在不向半导体元件施加第二电压的第一周期的至少一部分期间将电压施加到电极。
    • 67. 发明授权
    • Image forming apparatus having less decrease in primary transfer efficiency of toner image
    • 图像形成装置具有较少的调色剂图像的一次转印效率的降低
    • US08285181B2
    • 2012-10-09
    • US12726090
    • 2010-03-17
    • Jun Saito
    • Jun Saito
    • G03G15/01
    • G03G15/161G03G15/1605G03G2215/0132
    • The decrease of the transfer efficiency of transferring a toner image from a photosensitive drum onto an intermediate transfer belt is suppressed by the structure of an image forming apparatus including: a photosensitive drum holding member that pivotally supports the photosensitive drum at both ends thereof; a transfer roller holding member that pivotally supports a primary transfer roller at both ends thereof; and a transfer roller holding unit that determines a relative position between the photosensitive drum holding member and the transfer roller holding member by guiding the transfer roller holding member in a direction substantially perpendicular to a running surface of the belt and abutting an opposing part of the photosensitive drum holding member and an opposing part of the transfer roller holding member with each other, the opposing parts opposing each other.
    • 通过图像形成装置的结构抑制了将调色剂图像从感光鼓转印到中间转印带上的转印效率的降低,包括:感光鼓保持部件,其在其两端枢转地支撑感光鼓; 转印辊保持构件,其在其两端枢转地支撑一次转印辊; 以及转印辊保持单元,其通过沿着与所述带的行进表面基本垂直的方向引导所述转印辊保持构件来确定所述感光鼓保持构件和所述转印辊保持构件之间的相对位置,并抵靠所述感光鼓的相对部分 鼓保持构件和转印辊保持构件的相对部分彼此相对,相对的部分彼此相对。
    • 68. 发明授权
    • Liquid sealed vibration isolating device
    • 液体密封隔振装置
    • US08011644B2
    • 2011-09-06
    • US11950462
    • 2007-12-05
    • Jun SaitoMasatomo NishizakaNobuo KuboHiroshi Yanagase
    • Jun SaitoMasatomo NishizakaNobuo KuboHiroshi Yanagase
    • F16F5/00
    • F16F13/105
    • To block the transmission to a vehicle body side of the vibration due to the cavitation phenomenon occurred in a primary liquid chamber so as to prevent the generation of noises, at the same time, to make the device compact, and to improve the fitting accuracy to obtain the reliable positioning, a first metallic fitting and a second metallic fitting are connected by an insulator. A primary liquid chamber and a secondary liquid chamber formed inwardly are partitioned by a partition member and communicated therebetween by an orifice passage. The partition member is floatingly supported between an extended portion of the insulator and an outer peripheral thick wall portion of a diaphragm, and the tuning is performed to generate the rigid resonance at the predetermined frequency. An outer ring is provided in the outer peripheral thick wall portion so as to be securely fixed by a fixing portion formed by bending an end of an outer cylindrical fitting. The floatingly supporting structure does not become large-sized and complicated since the partition member is simply floatingly supported.
    • 为了阻止由于在主液室中发生的气蚀现象而导致的车体侧的传递,以防止产生噪声,同时使得该装置紧凑,并且将装配精度提高到 获得可靠的定位,第一金属配件和第二金属配件通过绝缘体连接。 向内形成的主液室和二液室由分隔构件分隔开,并通过孔通道连通。 分隔构件浮动地支撑在绝缘体的延伸部分和隔膜的外周厚壁部分之间,并且进行调谐以产生预定频率的刚性谐振。 在外周厚壁部分设置有外环,以便通过弯曲外圆筒形配件的端部而形成的固定部分可靠地固定。 由于分隔构件被简单地浮动地支撑,所以浮动支撑结构不会变得大而复杂。
    • 69. 发明申请
    • IGBT AND METHOD FOR MANUFACTURING IGBT
    • IGBT及其制造方法
    • US20110201187A1
    • 2011-08-18
    • US13124774
    • 2009-10-15
    • Tsuyoshi NishiwakiJun Saito
    • Tsuyoshi NishiwakiJun Saito
    • H01L21/265H01L21/28
    • H01L29/7397H01L29/0834H01L29/1095H01L29/66348
    • A vertical IGBT includes a floating region of the first conductive type being formed within the body region of the second conductive type. A density of first conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to increase from an upper side to a lower side. A density of the first conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to decrease from an upper side to a lower side. A density of second conductive type impurities at a boundary of the floating region and the body region that is above the floating region is distributed to decrease from an upper side to a lower side. A density of the second conductive type impurities at a boundary of the floating region and the body region that is under the floating region is distributed to increase from an upper side to a lower side.
    • 垂直IGBT包括形成在第二导电类型的体区内的第一导电类型的浮动区域。 在浮动区域和浮动区域上方的体区域的边界处的第一导电类型杂质的密度分布成从上侧向下侧增加。 在浮动区域的边界处的第一导电型杂质和位于浮动区域下方的体区域的密度分布从上侧向下侧减小。 在浮动区域和浮动区域上方的体区域的边界处的第二导电类型杂质的密度从上侧向下侧分布。 在浮动区域和浮动区域下方的体区域的边界处的第二导电类型杂质的密度分布成从上侧向下侧增加。
    • 70. 发明申请
    • BATTERY CONTROLLING APPARATUS FOR A VEHICLE
    • 电动车控制装置
    • US20100164438A1
    • 2010-07-01
    • US12523004
    • 2008-03-04
    • Jun Saito
    • Jun Saito
    • H02J7/04
    • H02J7/14B60L3/0046B60L3/12B60L11/1816B60L11/1861B60L11/1868B60L2240/545B60L2240/547B60L2240/549B60L2240/80H02J7/041H02J7/042Y02T10/7005Y02T10/7044Y02T10/7066Y02T10/7072Y02T90/14
    • The present invention relates to a battery controlling apparatus for a vehicle and effectively prevents overcharge upon battery charging with a simple configuration.The battery controlling apparatus for a vehicle includes a charging ratio detection section 1b for detecting a charging ratio of a battery 4 upon starting of constant current control, an elapsed time measurement section 2a for measuring elapsed time from a point of time at which the constant current control starts, a timeout setting section 2c for setting timeout time of the constant current control based on the charging ratio detected by the charging ratio detection section 1b, and a current cutoff section 2d for cutting off current to be supplied to the battery 4 when the elapsed time measured by the elapsed time measurement section 2a, upon the constant current control, exceeds the timeout time set by the timeout setting section 2c.
    • 本发明涉及一种用于车辆的电池控制装置,并且以简单的配置有效地防止了对电池充电的过充电。 用于车辆的电池控制装置包括充电比率检测部分1b,用于在恒定电流控制开始时检测电池4的充电比率;经过时间测量部分2a,用于测量从恒定电流 控制开始,用于根据由充电比率检测部分1b检测到的充电率设定恒定电流控制的超时时间的超时设定部分2c以及当电池4被提供给电池4时截止电流的电流截止部分2d 经过时间测量部分2a测量的经过时间,在恒定电流控制下,超过由超时设定部分2c设置的超时时间。