专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

61. 发明授权

US06448352B1 Photoresist monomer, polymer thereof and photoresist composition containing it 失效
标题翻译：光致抗蚀剂单体，其聚合物和含有它的光致抗蚀剂组合物
公开(公告)号：US06448352B1
公开(公告)日：2002-09-10
申请号：US09621068
申请日：2000-07-21
申请人： Min Ho Jung , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
发明人： Min Ho Jung , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： C08F2608
CPC分类号： C08F32/08 , G03F7/0395
摘要： The present invention provides novel bicyclic photoresist monomers, and photoresist copolymer derived from the same. The bicyclic photoresist monomers of the present invention comprise both amine functional group and acid labile protecting group, and are represented by the formula: where m, n, R, V and B are those defined herein. The photoresist composition comprising the photoresist copolymer of the present invention has excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).
摘要翻译：本发明提供了新的双环光致抗蚀剂单体和衍生自其的光致抗蚀剂共聚物。本发明的双环光致抗蚀剂单体包括胺官能团和酸不稳定保护基团，并且由下式表示：其中m，n，R，V和B是本文定义的那些。包含本发明的光致抗蚀剂共聚物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。

62. 发明授权

US06369181B1 Copolymer resin, preparation thereof, and photoresist using the same 有权
标题翻译：共聚物树脂及其制备方法和使用其的光致抗蚀剂
公开(公告)号：US06369181B1
公开(公告)日：2002-04-09
申请号：US09222053
申请日：1998-12-29
申请人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Min Ho Jung , Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C08F3208
CPC分类号： C08F232/08 , C08F222/06 , G03F7/0045 , G03F7/039 , Y10S430/115
摘要： The present invention relates to a copolymer resin for a photoresist used with far ultraviolet rays such as KrF or ArF. The copolymer is represented by the following formula III:
摘要翻译：本发明涉及用于与诸如KrF或ArF的远紫外线一起使用的光刻胶的共聚物树脂。共聚物由下式III表示：

63. 发明授权

US06322948B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06322948B1
公开(公告)日：2001-11-27
申请号：US09499231
申请日：2000-02-07
申请人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0382 , Y10S430/128
摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF (248 nm), ArF (193 nm), E-beam, ion-beam or EUV light sources.
摘要翻译：本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。<化学式1>

64. 发明授权

US06319654B1 Process for forming a photoresist pattern by top surface imaging process 失效
标题翻译：通过顶表面成像工艺形成光致抗蚀剂图案的工艺
公开(公告)号：US06319654B1
公开(公告)日：2001-11-20
申请号：US09566290
申请日：2000-05-05
申请人： Myoung Soo Kim , Jae Chang Jung , Hyung Gi Kim , Ki Ho Baik
发明人： Myoung Soo Kim , Jae Chang Jung , Hyung Gi Kim , Ki Ho Baik
IPC分类号： G03F740
CPC分类号： G03F7/38 , G03F7/0045 , G03F7/038 , G03F7/265 , Y10S430/168
摘要： The present invention relates to a process for forming a photoresist pattern by employing a silylation process, and particularly to a method for forming a photoresist pattern according to a top surface imaging (TSI) process using a photoresist composition comprising a cross-linker having a cross-linker monomer of the following Chemical Formula 1 or 2. The photoresist composition containing a polymer of the above cross-linker monomer is preferably used in a TSI process which has been optimized by controlling the conditions of each step, such as temperature and time, thereby obtaining an ultrafine pattern that can be more efficiently applied to a 4 G or 16 G DRAM semiconductor fabrication process: wherein, R1, R2, R3, R5, R6, R7, R, m and n are as defined in the specification attached hereto.
摘要翻译：本发明涉及一种通过使用甲硅烷化方法形成光致抗蚀剂图案的方法，特别涉及一种使用光致抗蚀剂组合物的顶表面成像（TSI）方法形成光致抗蚀剂图案的方法，所述光致抗蚀剂组合物包含交联剂含有上述交联剂单体的聚合物的光致抗蚀剂组合物优选用于通过控制各步骤的条件如温度和时间而优化的TSI方法，从而获得可以更有效地应用于4G或16G DRAM半导体制造工艺的超精细图案：其中，R1，R2，R3，R5，R6，R7，R，m和n如本文所附的说明书中所定义。。

65. 发明授权

US06312868B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06312868B1
公开(公告)日：2001-11-06
申请号：US09501096
申请日：2000-02-09
申请人： Keun Kyu Kong , Jae Chang Jung , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
发明人： Keun Kyu Kong , Jae Chang Jung , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： G03F7/0045 , G03F7/038
摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. Such cross-linkers are suitable for use in photolithography processes employing KrF(248nm), ArF(193nm), E-beam, ion-beam or EUV light sources. wherein X1 and X2 individually represent CH2, CH2CH2, O or S; p and s individually represent an integer from 0 to 5; q is 0 or 1; R′ and R″ independently represent hydrogen or methyl; R represents straight or branched C1-10 alkyl, straight or branched C1-10 ether, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ether including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R1 and R2 independently represent hydrogen, straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group.
摘要翻译：本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂。这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺.X1和X2分别表示CH2，CH2CH2，O或S; p和s各自表示0至5的整数; q为0或1; R'和R“独立地表示氢或甲基; R代表直链或支链C 1-10烷基，直链或支链C1-10醚，直链或支链C1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10醚，包括至少一个羟基的直链或支链C 1-10酯，直链或支链C 1-10酮包括至少一个羟基，包括至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R 1和R 2独立地表示氢，直链或支链C 1-10烷基，直链或支链C 1-10酯，直链或支链C 1-10酮，直链或支链C 1-10羧酸，直链或支链C 1-10缩醛，直链或包括至少一个羟基的支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酯，包括至少一个羟基，直链或支链C 1-10羧酸的直链或支链C 1-10酮包括至少一个羟基，以及包含至少一个羟基的直链或支链C 1-10缩醛。

66. 发明授权

US06265130B1 Photoresist polymers of carboxyl-containing alicyclic compounds 有权
标题翻译：含羧基脂环化合物的光致抗蚀剂聚合物
公开(公告)号：US06265130B1
公开(公告)日：2001-07-24
申请号：US09302064
申请日：1999-04-29
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： C07C59/46 , C07C57/26 , C07C59/80 , C07C69/608 , C07C69/732 , C07C69/738 , C08G61/08 , G03F7/0045 , G03F7/039 , Y10S430/106
摘要： The present invention relates to a carboxyl-containing alicyclic compound represented by Chemical Formula 1: wherein, R1 and R2, which may be identical to or different from each other, represent hydrogen or a tert-butyl group; X represents hydrogen, hydroxy or oxygen; and n represents a number from 1 to 3. Compounds of the present invention are useful as monomers in a photoresist resin, and in a process for preparing the same.
摘要翻译：本发明涉及由化学式1表示的含羧基脂环族化合物：其中可以相同或不同的R1和R2表示氢或叔丁基; X表示氢，羟基或氧; n表示1〜3的数。本发明的化合物可用作光致抗蚀剂树脂中的单体，也可用作其制备方法。

67. 发明授权

US6132926A ArF photoresist copolymers 失效
标题翻译： ArF光刻胶共聚物
公开(公告)号：US6132926A
公开(公告)日：2000-10-17
申请号：US984
申请日：1997-12-30
申请人： Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
发明人： Jae Chang Jung , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： G03F7/004 , C07C67/347 , C07C69/753 , C08F2/00 , C08F2/02 , C08F2/06 , C08F4/04 , C08F4/34 , C08F216/06 , C08F222/06 , C08F232/04 , C08F232/08 , C08F234/02 , C08K5/00 , C08L45/00 , G03F7/039 , H01L21/027 , C08F232/00
CPC分类号： G03F7/0395 , C08F232/04 , G03F7/039
摘要： A photoresist including a copolymer prepared from bicycloalkene derivative, maleic anhydride and/or vinylene carbonate, which has molecular weight ranging from about 3,000 to 100,000. The photoresist can be used for submicrolithography employing deep ultra violety as a light source. In addition to being of high etch resistance and thermal resistance, the photoresist has good adhesiveness and can be developed in a TMAH solution.
摘要翻译：一种光致抗蚀剂，包括由双链烯烃衍生物，马来酸酐和/或碳酸亚乙烯酯制备的共聚物，其分子量范围为约3,000至100,000。光致抗蚀剂可用于使用深度超光泽作为光源的亚微光刻。除了具有高耐蚀刻性和耐热性之外，光致抗蚀剂具有良好的粘合性并且可以在TMAH溶液中显影。

68. 发明授权

US6045967A Method and device using ArF photoresist 失效
标题翻译：使用ArF光刻胶的方法和装置
公开(公告)号：US6045967A
公开(公告)日：2000-04-04
申请号：US003780
申请日：1998-01-07
申请人： Jae Chang Jung , Chi Hyeong Roh , Joo On Park
发明人： Jae Chang Jung , Chi Hyeong Roh , Joo On Park
IPC分类号： G03F7/027 , C08F2/48 , C08F226/02 , C08F232/00 , G03F7/004 , G03F7/039 , H01L21/027 , G03C1/72 , G03C1/74
CPC分类号： G03F7/039 , G03F7/0045
摘要： A novel photoresist copolymer, consisting of at least two aliphatic cyclo-olefins and an amine, which is useful for the photolithography using ArF as a light source. The photoresist prepared from the copolymer can be patterned with high resolution.
摘要翻译：由至少两种脂族环烯烃和胺组成的新型光致抗蚀剂共聚物，其可用于使用ArF作为光源的光刻。由共聚物制备的光刻胶可以高分辨率图案化。

69. 发明授权

US6028153A Copolymer resin of maleimide and alicyclic olefin-based monomers, photoresist containing the copolymer resin and the preparation thereof 有权
标题翻译：马来酰亚胺和脂环族烯烃基单体的共聚物树脂，含有共聚物树脂的光致抗蚀剂及其制备
公开(公告)号：US6028153A
公开(公告)日：2000-02-22
申请号：US152754
申请日：1998-09-14
申请人： Jae Chang Jung
发明人： Jae Chang Jung
IPC分类号： G03F7/004 , C07D207/448 , C08F2/06 , C08F220/52 , C08F222/06 , C08F222/40 , C08F232/00 , C08F232/08 , G03F7/039 , C08F26/06
CPC分类号： C08F222/40 , C08F232/08 , Y10S522/904
摘要： The present invention relates to a novel copolymer resin of maleimide and alicyclic olefin-based monomers, a photoresist containing the copolymer and a process for the preparation thereof. More specifically, the present invention relates to a novel copolymer resin of maleimide and alicyclic olefin-based monomers useful for a photoresist usable lithography process using ultra-short wavelength light source such as KrF(.lambda.=248 .mu.m), ArF(.lambda.=193 .mu.m), X-ray, ion beam, E-beam and EUV (Extreme Ultra Violet) which is a potentially applicable technology to the fabrication of a fine circuit of a highly integrated semiconductor device.
摘要翻译：本发明涉及马来酰亚胺和脂环族烯烃基单体的新型共聚物树脂，含该共聚物的光致抗蚀剂及其制备方法。更具体地说，本发明涉及一种用于使用超短波长光源如KrF（λ=248μm），ArF（λ= 193）的光致抗蚀剂可用光刻工艺的马来酰亚胺和脂环族烯烃基单体的新型共聚物树脂 μm），X射线，离子束，电子束和EUV（Extreme Ultra Violet），这是制造高度集成的半导体器件的精细电路的潜在适用技术。

70. 发明授权

US6017676A Photoresist composition comprising a copolymer resin 失效
标题翻译：包含共聚物树脂的光致抗蚀剂组合物
公开(公告)号：US6017676A
公开(公告)日：2000-01-25
申请号：US863147
申请日：1997-05-27
申请人： Jae Chang Jung , Cha Won Koh
发明人： Jae Chang Jung , Cha Won Koh
IPC分类号： G03F7/004 , C08F222/40 , G03F7/038 , G03F7/039 , G03F7/26 , G03F7/38 , H01L21/027 , G03C1/73
CPC分类号： G03F7/039 , G03F7/0045
摘要： A photoresist composition suitable for forming fine patterns of semiconductor devices, comprising a resin, a photosensitive acid generator and additives. The resin has a cyclic structure which is superior in thermal resistance and etch resistance as well as allowing for a light source of 200 nm or a shorter wavelength.
摘要翻译：适用于形成精细图案的半导体器件的光致抗蚀剂组合物，包括树脂，感光酸产生剂和添加剂。该树脂具有耐热性和耐蚀刻性优异以及允许200nm或更短波长的光源的循环结构。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式