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    • 61. 发明申请
    • PHOTOELECTRIC CONVERSION DEVICE
    • 光电转换器件
    • US20110108111A1
    • 2011-05-12
    • US12784340
    • 2010-05-20
    • Nam-Choul YangHyun-Chul KimMoon-Sung Kang
    • Nam-Choul YangHyun-Chul KimMoon-Sung Kang
    • H01L31/02
    • H01G9/2077H01G9/2031H01G9/2059Y02E10/542
    • A photoelectric conversion device that may effectively prevent an electrolyte from leaking and have a high durability. The photoelectric conversion device includes a first substrate and a second substrate spaced from the first substrate with a space therebetween. The first substrate has an inlet from a side of the first substrate opposite a side facing the second substrate, and the inlet extends through the first substrate to the space between the first and second substrates. A filling material substantially fills at least a portion of the inlet. A cap is on the first substrate and covers the inlet. The filling material isolates the cap from the space such that the space is double sealed from the side of the first substrate opposite the side facing the second substrate.
    • 可以有效地防止电解液泄漏并具有高耐久性的光电转换装置。 光电转换装置包括第一基板和与第一基板间隔开的间隔开的第二基板。 第一衬底具有从第一衬底的与面向第二衬底的一侧相对的一侧的入口,并且入口延伸穿过第一衬底到第一和第二衬底之间的空间。 填充材料基本上填充入口的至少一部分。 盖子位于第一基板上并覆盖入口。 填充材料将盖与空间隔离,使得空间与第一基板的与面向第二基板的一侧相反的一侧双重密封。
    • 62. 发明授权
    • DMB data receiving apparatus and method for improving DMB data receiving speed
    • DMB数据接收装置及改善DMB数据接收速度的方法
    • US07933590B2
    • 2011-04-26
    • US11434340
    • 2006-05-15
    • Ji-Wuck JungYoung-Jip KimHyun-Chul Kim
    • Ji-Wuck JungYoung-Jip KimHyun-Chul Kim
    • H04L29/08H04B3/38H04B7/14
    • H04H20/24H04H20/16H04H20/57H04H60/12H04H60/82H04H60/91H04H2201/30H04H2201/37
    • Disclosed is a DMB data receiving apparatus and method for improving a DMB data receiving speed. According to the DMB data receiving apparatus and method, if there are predetermined MSC data, which have not been received or received with an error when receiving MSC data by a DMB reception terminal, the DMB reception terminal can receive the predetermined MSC data through a return channel established between the DMB reception terminal and a broadcasting station. In detail, if there are predetermined MSC data, which have not been received or received with an error, the DMB reception terminal request the broadcasting station to transmit the predetermined MSC data and to allow establishment of a return channel, and then receives the predetermined MSC data through a return channel established based on the request. Therefore, when some MOT content data have not been received or received with an error, the DMB reception terminal can immediately receive the corresponding MOT content data without waiting until the next MOT data transmission period begins, thereby greatly improving the DMB data receiving speed.
    • 公开了一种用于提高DMB数据接收速度的DMB数据接收装置和方法。 根据DMB数据接收装置和方法,如果存在由DMB接收终端接收到MSC数据时没有接收到或接收错误的预定MSC数据,则DMB接收终端可以通过返回来接收预定的MSC数据 在DMB接收终端和广播电台之间建立通道。 详细地说,如果没有接收到错误的预定MSC数据,DMB接收终端请求广播电台发送预定的MSC数据并允许建立返回信道,然后接收预定的MSC 通过根据请求建立的返回信道的数据。 因此,当一些MOT内容数据没有被接收或接收到错误时,DMB接收终端可以立即接收对应的MOT内容数据,而不等待直到下一个MOT数据传输周期开始,从而大大提高DMB数据接收速度。
    • 63. 发明申请
    • DYE-SENSITIZED SOLAR CELL
    • 透明的太阳能电池
    • US20110048523A1
    • 2011-03-03
    • US12691161
    • 2010-01-21
    • Sang-Yeol HURJi-Won LeeJong-Ki LeeMoon-Sung KangByong-Cheol ShinNam-Choul YangHyun-Chul KimSi-Young ChaDo-Young Park
    • Sang-Yeol HURJi-Won LeeJong-Ki LeeMoon-Sung KangByong-Cheol ShinNam-Choul YangHyun-Chul KimSi-Young ChaDo-Young Park
    • H01L31/00
    • H01G9/2068H01G9/2031H01G9/2059H01L51/445Y02E10/542Y02P70/521
    • Provided is a dye-sensitized solar cell including a first substrate and a second substrate facing each other; a first electrode unit and a second electrode unit disposed between the first substrate and the second substrate and respectively including at least one or more grid electrodes; an electrolyte filled in the first electrode unit and the second electrode unit; a sealing material for sealing the electrolyte between the first substrate and the second substrate; a collector electrode unit including a first collector electrode and a second collector electrode electrically connected to the first electrode unit and the second electrode unit, respectively; and a protruding terminal unit including a first protruding terminal and a second protruding terminal electrically connected to the first collector electrode and the second collector electrode, respectively. At least a portion of at least one of the collector electrodes is disposed in an internal area sealed by the sealing material, and the first electrode unit includes an oxide layer including dye molecules.
    • 提供一种染料敏化太阳能电池,其包括彼此面对的第一基板和第二基板; 第一电极单元和第二电极单元,设置在第一基板和第二基板之间,并且分别包括至少一个或多个栅极; 填充在第一电极单元和第二电极单元中的电解质; 用于在第一基板和第二基板之间密封电解质的密封材料; 集电极电极单元,包括分别与第一电极单元和第二电极单元电连接的第一集电极电极和第二集电极电极; 以及突出端子单元,包括分别与第一集电极电极和第二集电极电连接的第一突出端子和第二突出端子。 至少一个集电极的至少一部分设置在由密封材料密封的内部区域中,第一电极单元包括含有染料分子的氧化物层。
    • 69. 发明授权
    • Fuse box semiconductor device
    • 保险丝盒半导体器件
    • US07009274B2
    • 2006-03-07
    • US10731270
    • 2003-12-08
    • Hyun-Chul Kim
    • Hyun-Chul Kim
    • H01L29/00
    • H01L23/5258H01L2924/0002H01L2924/00
    • A fuse box includes a semiconductor substrate having a fuse region, and a lower line in the fuse region that has a first region and a second region. An upper line is placed on the upper part of the lower line to overlap the first region. A fuse is placed on the upper part of the upper line, and connects electrically to the second region of the lower line and the upper surface of the upper line. A lower interlayer insulating layer is interposed between the lower line and the upper line, and an upper interlayer insulating layer is interposed between the upper line and the fuse. The fuse is formed on the upper interlayer insulating layer. Both ends of the fuse connect electrically to the second region of the lower line and the upper line, respectively, through fuse holes penetrating the lower and upper interlayer insulating layers.
    • 保险丝盒包括具有熔丝区域的半导体衬底和具有第一区域和第二区域的熔丝区域中的下部线。 下行线的上部放置一条上线以与第一区域重叠。 保险丝放置在上线的上部,并且电连接到下线的第二区域和上线的上表面。 在下行线路和上线路之间插入下层层间绝缘层,并且在上部线路和保险丝之间插入上层间绝缘层。 熔丝形成在上层间绝缘层上。 熔丝的两端分别通过穿透下层和上层间绝缘层的熔丝孔电连接到下线的第二区域和上层。
    • 70. 发明授权
    • Methods of forming trench-gate semiconductor devices using sidewall
implantation techniques to control threshold voltage
    • 使用侧壁注入技术形成沟槽栅极半导体器件以控制阈值电压的方法
    • US6040212A
    • 2000-03-21
    • US833403
    • 1997-04-04
    • Hyun-Chul Kim
    • Hyun-Chul Kim
    • H01L21/265H01L21/336H01L29/08H01L29/739H01L29/78H01L21/8242
    • H01L29/7397H01L21/26586H01L29/7813H01L29/0847
    • Methods of forming trench-gate semiconductor devices using sidewall implantation techniques include the steps of forming a semiconductor substrate containing a trench-gate semiconductor device therein (e.g., MOSFET, IGBT) and then implanting dopants of predetermined conductivity type into a sidewall of the trench to adjust the threshold voltage of the semiconductor device. In particular, a method is provided which comprises the steps of forming a semiconductor substrate containing a trench therein at a first face thereof, a body region of second conductivity type (e.g., P-type) extending adjacent a sidewall of the trench and a source region of first conductivity type in the body region and extending adjacent a sidewall of the trench and adjacent the first face. An electrically insulating region (e.g., SiO.sub.2) is also formed on a sidewall of the trench and an electrically conductive region is formed in the trench. To adjust the threshold voltage of the semiconductor device, dopants of first conductivity type are implanted through the electrically insulating region and through the sidewall of the trench and into the source region of first conductivity type. Preferably, these implanted dopants are diffused into the channel region of the semiconductor device during subsequent thermal treatment steps to adjust the threshold voltage of the semiconductor device to preferred levels.
    • 使用侧壁注入技术形成沟槽栅极半导体器件的方法包括以下步骤:在其中形成包含沟槽栅极半导体器件的半导体衬底(例如,MOSFET,IGBT),然后将预定导电类型的掺杂剂注入到沟槽的侧壁中 调整半导体器件的阈值电压。 特别地,提供了一种方法,其包括以下步骤:在其第一面形成包含沟槽的半导体衬底,邻近沟槽的侧壁延伸的第二导电类型(例如,P型)的主体区域和源极 第一导电类型的区域,并且在沟槽的侧壁附近并且与第一面相邻。 在沟槽的侧壁上还形成电绝缘区域(例如SiO 2),并且在沟槽中形成导电区域。 为了调整半导体器件的阈值电压,第一导电类型的掺杂剂通过电绝缘区域并通过沟槽的侧壁注入第一导电类型的源极区域。 优选地,这些注入的掺杂剂在随后的热处理步骤期间扩散到半导体器件的沟道区域中,以将半导体器件的阈值电压调整到优选的水平。