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61. 发明授权

US07855386B2 N-type group III nitride semiconductor layered structure 有权
标题翻译： N型III族氮化物半导体层状结构
公开(公告)号：US07855386B2
公开(公告)日：2010-12-21
申请号：US10585744
申请日：2005-04-27
申请人： Akira Bandoh , Hiromitsu Sakai , Masato Kobayakawa , Mineo Okuyama , Hideki Tomozawa , Hisayuki Miki , Joseph Gaze , Syunji Horikawa , Tetsuo Sakurai
发明人： Akira Bandoh , Hiromitsu Sakai , Masato Kobayakawa , Mineo Okuyama , Hideki Tomozawa , Hisayuki Miki , Joseph Gaze , Syunji Horikawa , Tetsuo Sakurai
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/025 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02538 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/32
摘要： An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits.The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.
摘要翻译：本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层所述低浓度层堆叠在所述较高浓度层上。

62. 发明授权

US07847314B2 Gallium nitride-based compound semiconductor light-emitting device 有权
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US07847314B2
公开(公告)日：2010-12-07
申请号：US12065970
申请日：2006-09-05
申请人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
发明人： Hironao Shinohara , Hisayuki Miki , Noritaka Muraki
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L33/025 , H01L33/0095 , H01L33/32 , H01L33/42
摘要： It is an object of the present invention to provide a gallium nitride-based compound semiconductor light-emitting device that is excellent in light output efficiency and needs only a low driving voltage (Vf). The inventive gallium nitride-based compound semiconductor light-emitting device includes an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer formed of a gallium nitride-based compound semiconductor and stacked in this order on a substrate, and positive and negative electrodes so arranged as to be in contact with the p-type semiconductor layer and the n-type semiconductor layer, respectively, wherein a region in which a p-type impurity and hydrogen atoms are co-present exists in the p-type semiconductor layer in contact with the positive electrode, and at least a portion, which is in contact with the p-type semiconductor layer, of the positive electrode, is formed of an n-type electro-conductive light transmitting material.
摘要翻译：本发明的目的是提供一种氮化镓系化合物半导体发光元件，该氮化镓系化合物半导体发光元件的光输出效率优异，仅需要低驱动电压（Vf）。本发明的氮化镓系化合物半导体发光元件包括n型半导体层，发光层和由氮化镓系化合物半导体形成的p型半导体层，并依次层叠在基板上，以及分别与p型半导体层和n型半导体层接触的正极和负极，其中在p中存在p型杂质和氢原子共存的区域与正极接触的至少一部分与正极的p型半导体层接触的至少一部分由n型导电透光材料形成。

63. 发明申请

US20090294791A1 ELECTRODE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：用于半导体发光器件的电极
公开(公告)号：US20090294791A1
公开(公告)日：2009-12-03
申请号：US12066194
申请日：2006-09-06
申请人： Hisayuki Miki
发明人： Hisayuki Miki
IPC分类号： H01L33/00
CPC分类号： H01L33/38 , H01L33/20 , H01L33/32 , H01L33/42
摘要： An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity.The electrode for a semiconductor light emitting device has a structure with an n-type or p-type electrode and an opposing p-type or n-type electrode on the same side of the light emitting device. Both electrodes comprise a bonding pad and a transparent conductive layer. Preferably, the light emitting device is a GaN-based semiconductor light emitting device. The material of the transparent conductive layer is a metal oxide such as ITO, or a metal such as Al, Ni.
摘要翻译：本发明的目的是提供一种能够以低驱动电压产生强大的发光而不降低结晶度的电极。用于半导体发光器件的电极具有在发光器件的同一侧上具有n型或p型电极和相对的p型或n型电极的结构。两个电极都包括接合焊盘和透明导电层。优选地，发光器件是GaN基半导体发光器件。透明导电层的材料是诸如ITO的金属氧化物或诸如Al，Ni的金属。

64. 发明授权

US07612363B2 N-type group III nitride semiconductor stacked layer structure 有权
标题翻译： N型III族氮化物半导体堆叠层结构
公开(公告)号：US07612363B2
公开(公告)日：2009-11-03
申请号：US11661757
申请日：2005-09-13
申请人： Hitoshi Takeda , Hisayuki Miki
发明人： Hitoshi Takeda , Hisayuki Miki
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/24 , H01L33/00
CPC分类号： H01L29/155 , B82Y20/00 , H01L24/73 , H01L29/2003 , H01L33/02 , H01L33/025 , H01L33/32 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/73265 , H01S5/34333 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： An n-type Group III nitride semiconductor stacked layer structure including a first n-type layer which includes a layer containing n-type impurity atoms at a high concentration and a layer containing n-type impurity atoms at a low concentration, a second n-type layer containing n-type impurity atoms at an average concentration smaller than that of the first n-type layer, the second n-type layer neighboring the layer containing n-type impurity atoms at a low concentration in the first n-type layer.
摘要翻译：一种n型III族氮化物半导体层叠结构，包括：第一n型层，其包括含有高浓度的n型杂质原子的层和含有低浓度的n型杂质原子的层;第二n- 在第一n型层中平均浓度小于第一n型层的n型杂质原子的第二n型层与低浓度的n型杂质原子相邻。

65. 发明申请

US20070152232A1 Gallium nitride-based semiconductor device 有权
标题翻译：氮化镓基半导体器件
公开(公告)号：US20070152232A1
公开(公告)日：2007-07-05
申请号：US10591584
申请日：2005-03-03
申请人： Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
发明人： Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
IPC分类号： H01L33/00
CPC分类号： H01L29/2003 , H01L31/0304 , H01L31/105 , H01L33/14 , H01L33/32 , Y02E10/544
摘要： A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride (GaN) compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity and, in combination therewith, hydrogen. The top portion includes a region containing a Group III element and a Group V element at a non-stoichiometric atomic ratio.
摘要翻译：氮化镓基半导体器件具有作为包含p型杂质且呈p型导电的氮化镓（GaN）化合物半导体层的p型层。 p型层包括顶部和位于顶部下方的内部。内部部分含有p型杂质，并与其结合，含有氢。顶部包括含有非化学计量原子比的III族元素和V族元素的区域。

66. 发明授权

US07057210B2 Electrode for light-emitting semiconductor devices and method of producing the electrode 失效
公开(公告)号：US07057210B2
公开(公告)日：2006-06-06
申请号：US10800773
申请日：2004-03-16
申请人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
发明人： Hisayuki Miki , Takashi Udagawa , Noritaka Muraki , Mineo Okuyama
IPC分类号： H01L29/205 , H01L23/48
CPC分类号： H01L33/42 , H01L33/32 , H01L33/38 , H01L33/40 , H01L2924/0002 , H01L2924/01005 , H01L2924/01012 , H01L2924/01015 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01046 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2933/0016 , H01L2924/00
摘要： An electrode for a light-emitting semiconductor device includes a light-permeable electrode formed to come into contact with the surface of the semiconductor, and a wire-bonding electrode that is in electrical contact with the light-permeable electrode and is formed to come into partial contact with the surface of the semiconductor with at least a region in contact with the semiconductor having a higher contact resistance per unit area with respect to the semiconductor than a region of the light-permeable electrode in contact with the semiconductor. This device electrode is formed by forming a wire-bonding electrode on a portion of the surface of a p-type GaN-base compound semiconductor, forming on the surface of the semiconductor a first layer that is of at least one member selected from the group consisting of Au, Pt and Pd and is formed to overlay the upper surface of the wire-bonding electrode at a portion at which the wire-bonding electrode is located, forming on the first layer a second layer that is of at least one metal selected from the group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg and In, and forming a light-permeable electrode by heat-treating the first and second layers in an atmosphere that contains oxygen.

67. 发明授权

US06852161B2 METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD OF FABRICATING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LIGHT SOURCE USING THE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：制备III族氮化物半导体晶体的方法，制备基于氮化镓的化合物半导体的方法，基于氮化镓的化合物半导体，基于氮化镓的化合物半导体发光器件和使用半导体发光器件的光源
公开(公告)号：US06852161B2
公开(公告)日：2005-02-08
申请号：US10110692
申请日：2001-08-17
申请人： Yasuhito Urashima , Mineo Okuyama , Tetsuo Sakurai , Hisayuki Miki
发明人： Yasuhito Urashima , Mineo Okuyama , Tetsuo Sakurai , Hisayuki Miki
IPC分类号： C30B25/02 , H01L21/20 , H01L21/205 , H01L33/00
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02491 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/0075
摘要： A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing no nitrogen source, a step of nitriding the particles in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.
摘要翻译：制备III族氮化物半导体晶体的膜的方法包括使用金属材料在不含氮源的气氛中在基板表面上沉积第III族金属的颗粒的步骤，在含有氮源且不含金属材料，以及在其上沉积有颗粒的基板表面上生长III族氮化物半导体晶体的步骤。

68. 发明授权

US08642992B2 Group III nitride compound semiconductor light emitting device 有权
标题翻译： III族氮化物化合物半导体发光器件
公开(公告)号：US08642992B2
公开(公告)日：2014-02-04
申请号：US12614111
申请日：2009-11-06
申请人： Hisayuki Miki
发明人： Hisayuki Miki
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0237 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/06 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： A Group III nitride compound semiconductor light emitting device is provided which has: an n-type semiconductor layer (12); an active layer (13) of a multiple quantum well structure laminated on the n-type semiconductor layer (12); a first p-type semiconductor layer (14) that is a layer of a superlattice structure in which an undoped film (14a) that has a composition AlxGa1-xN (x indicating composition ratio, being within a range 0
摘要翻译：提供了具有：n型半导体层（12）的III族氮化物化合物半导体发光器件; 层叠在所述n型半导体层（12）上的多量子阱结构的有源层（13）。第一p型半导体层（14），其是具有组成Al x Ga 1-x N（x表示组成比，在0

69. 发明授权

US08366294B2 Light-emitting device, light-emitting module, and method for manufacturing light-emitting device 失效
标题翻译：发光装置，发光模块以及发光装置的制造方法
公开(公告)号：US08366294B2
公开(公告)日：2013-02-05
申请号：US13142171
申请日：2009-12-16
申请人： Tomoyuki Takei , Hisayuki Miki
发明人： Tomoyuki Takei , Hisayuki Miki
IPC分类号： F21V7/00 , H01L33/60
CPC分类号： H01L33/60 , H01L33/641
摘要： A light-emitting chip (22) includes: a container (30) having a concave portion (31); first to fourth lead portions (61) to (64), provided to be exposed to the concave portion (31); and a first blue LED to a fourth blue LED (74) mounted on the first to fourth lead portions (61) to (64) exposed to the concave portion (31). The container (30) includes a first container portion (40) covering the region of the concave portion (31) where the first to fourth lead portions (61) to (64) are not exposed, and a second container portion (50) contacting the first to fourth lead portions (61) to (64) without being exposed to the concave portion (31) and accommodating the first container portion (40). The first container portion (40) is formed of a material having higher light reflectivity than that of the second container portion (50), and the second container portion (50) is formed of a material having higher thermal conductivity than that of the first container portion (40). Thus, a decrease in extraction efficiency for light emitted from a light-emitting element can be suppressed, and a rise in the temperature of the light-emitting element in response to the light emission can be suppressed.
摘要翻译：发光芯片（22）包括：具有凹部（31）的容器（30）第一至第四引线部分（61）至（64），设置为暴露于所述凹部（31）; 以及安装在暴露于凹部（31）的第一至第四引线部分（61）至（64）上的第四蓝色LED（74）的第一蓝色LED。容器（30）包括覆盖第一至第四引线部分（61）至（64）不暴露的凹部（31）的区域的第一容器部分（40）和与第一容器部分（50）接触的第二容器部分第一至第四引线部分（61）至（64），而不暴露于凹部（31）并容纳第一容器部分（40）。第一容器部分（40）由具有比第二容器部分（50）的光反射率更高的光反射率的材料形成，并且第二容器部分（50）由比第一容器（50）的热导率更高的材料形成部分（40）。因此，可以抑制从发光元件发射的光的提取效率的降低，并且可以抑制响应于发光的发光元件的温度的升高。

70. 发明授权

US07759690B2 Gallium nitride-based compound semiconductor light-emitting device 有权
标题翻译：氮化镓系化合物半导体发光元件
公开(公告)号：US07759690B2
公开(公告)日：2010-07-20
申请号：US11994549
申请日：2006-06-30
申请人： Hisayuki Miki , Hironao Shinohara , Koji Kamei
发明人： Hisayuki Miki , Hironao Shinohara , Koji Kamei
IPC分类号： H01L29/225 , H01L29/22 , H01L25/16 , H01L33/00
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/405 , H01L33/42 , H01L2933/0083
摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light-emitting device having a reflective positive electrode configured to achieve excellent light extraction efficiency.The inventive gallium nitride-based compound semiconductor light-emitting device has a gallium nitride-based compound semiconductor layer structure comprising an n-type semiconductor layer, a light-emitting layer and a p-type semiconductor layer, on a substrate, wherein a positive electrode provided on the p-type semiconductor layer is a reflective positive electrode comprising a transparent material layer and a reflective metal layer formed on the transparent material layer.
摘要翻译：本发明的目的是提供一种具有反射性正极的氮化镓系化合物半导体发光元件，其具有优异的光提取效率。本发明的氮化镓系化合物半导体发光元件在基板上具有含有n型半导体层，发光层和p型半导体层的氮化镓系化合物半导体层结构，设置在p型半导体层上的电极是包括透明材料层和形成在透明材料层上的反射金属层的反射性正极。

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