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    • 61. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US5978402A
    • 1999-11-02
    • US879615
    • 1997-06-20
    • Keisuke MatsumotoTakashi Nishimura
    • Keisuke MatsumotoTakashi Nishimura
    • G02F1/025H01S5/00H01S5/026H01S5/042H01S5/20H01S5/227H01S3/19
    • H01S5/0265H01S5/0425H01S5/2063H01S5/2275
    • An integrated modulator and semiconductor laser device includes a semiconductor substrate; an optical waveguide including an active layer having a width and a cladding layer, and disposed on the semiconductor substrate, the optical waveguide including a laser part and a modulator part modulating the intensity of laser light; a semi-insulating semiconductor layer disposed on opposite sides of the optical waveguide; a low-resistance contact layer for making an ohmic contact with an electrode material, disposed on the optical waveguide, being absent between the laser part and the modulator part, and having a width equivalent to the width of the active layer. Since the contact layer with a stripe structure having a width equivalent to that of the active layer is used in making ohmic contact to the electrode material, the cladding layer of the second conductivity type below the contact layer is narrowed as well, and the isolation between the laser and the modulator is also improved with good controllability without narrowing by etching. The flow of current between the contact layer of the laser part and the contact layer of the modulator part is reduced. As a result, the isolation between the laser part and the modulator part is improved by one order of magnitude over the prior art semiconductor laser device.
    • 集成调制器和半导体激光器件包括半导体衬底; 包括具有宽度的有源层和包覆层的光波导,并且设置在所述半导体衬底上,所述光波导包括激光部分和调制激光强度的调制器部分; 设置在所述光波导的相对侧的半绝缘半导体层; 设置在光波导上的与电极材料欧姆接触的低电阻接触层不存在于激光部分和调制器部分之间,并且具有与有源层宽度相等的宽度。 由于使用具有与有源层的宽度相等的宽度的条纹结构的接触层与电极材料发生欧姆接触,所以接触层下方的第二导电类型的包覆层也变窄, 激光器和调制器也被改进,具有良好的可控性,而不会通过蚀刻而变窄。 激光器部分的接触层与调制器部分的接触层之间的电流流动减小。 结果,与现有技术的半导体激光器件相比,激光器部分和调制器部件之间的隔离度提高了一个数量级。
    • 64. 发明授权
    • Semiconductor laser
    • 半导体激光器
    • US5805628A
    • 1998-09-08
    • US735637
    • 1996-10-23
    • Shoichi KarakidaNorio HayafujiTatsuya KimuraMotoharu MiyashitaHirotaka KizukiTakashi Nishimura
    • Shoichi KarakidaNorio HayafujiTatsuya KimuraMotoharu MiyashitaHirotaka KizukiTakashi Nishimura
    • H01S5/00H01S5/10H01S5/16H01S5/20H01S5/223H01S5/343H01S3/19
    • B82Y20/00H01S5/10H01S5/16H01S5/2231H01S5/1064H01S5/2077H01S5/3432
    • A semiconductor laser device includes a semiconductor substrate of a first conductivity type; opposed light emitting facets; a double heterojunction structure disposed on the semiconductor substrate and including an optical waveguide that extends between the facets and comprises a light emitting region and a lens region, the lens region being between the light emitting region and one of the facets, the double heterojunction structure including a plurality of AlGaAs series compound semiconductor layers which are thicker in the light emitting region than in the lens region; and a current blocking structure disposed on both sides of the double heterojunction structure and including a lower AlGaAs series compound semiconductor layer of the first conductivity type, an intermediate AlGaAs series compound semiconductor layer of a second conductivity type, opposite the first conductivity type, and an upper AlGaAs series compound semiconductor layer of the first conductivity type. Therefore, a reactive current that does not contribute to laser oscillation is prevented from flowing through the current blocking structure.
    • 半导体激光器件包括第一导电类型的半导体衬底; 相对的发光面; 双异质结结构,其设置在所述半导体衬底上,并且包括在所述面之间延伸并且包括发光区域和透镜区域的光波导,所述透镜区域在所述发光区域和所述面之一之间,所述双异质结结构包括 多个AlGaAs系化合物半导体层,其在发光区域比透镜区域厚; 以及设置在双异质结结构的两侧上的电流阻挡结构,并且包括第一导电类型的下AlGaAs系化合物半导体层,与第一导电类型相反的第二导电类型的中间AlGaAs系化合物半导体层和 第一导电类型的上AlGaAs系化合物半导体层。 因此,防止无助于激光振荡的无功电流流过电流阻挡结构。
    • 68. 发明授权
    • Cathode-ray tube wherein plural regions of phosphor screen are scanned
independently of one another
    • 其中荧光屏的多个区域彼此独立地扫描的阴极射线管
    • US5365142A
    • 1994-11-15
    • US945415
    • 1992-09-16
    • Takashi NishimuraKazuyuki SeinoEiji Kamohara
    • Takashi NishimuraKazuyuki SeinoEiji Kamohara
    • H01J31/20H01J29/07
    • H01J31/203H01J2231/1255
    • A cathode-ray tube includes an envelope having a rectangular face plate and a rectangular, flat rear plate opposed to the face plate. A phosphor screen is formed on the inner surface of the face plate and has a number striped phosphor layers extending in parallel to one another, and a plurality of regions which are independently scanned by electron beams. A mask support mechanism for supporting a shadow mask in the envelope comprises first mask support members fixed to the inner surface of the rear plate and situated to face first longitudinal ends of the phosphor layers, second mask support members fixed to the inner surface of the rear plate and situated to face second longitudinal ends of the phosphor layers, and central mask support members fixed to the inner surface of the rear plate and situated between the first and second support portions. The shadow mask is supported on the mask support members while being applied with a tensile force in the longitudinal direction of the phosphor layers.
    • 阴极射线管包括具有矩形面板和与面板相对的矩形平坦后板的外壳。 荧光屏形成在面板的内表面上,并且具有彼此平行延伸的数个条状荧光体层和由电子束独立扫描的多个区域。 用于在外壳中支撑荫罩的荫罩支撑机构包括固定到后板的内表面并且位于与荧光体层的第一纵向端部相对的第一掩模支撑构件,固定到后面的内表面的第二掩模支撑构件 并且定位成面对荧光体层的第二纵向端部,以及固定到后板的内表面并位于第一和第二支撑部分之间的中心掩模支撑构件。 荫罩被支撑在掩模支撑构件上,同时沿着荧光体层的纵向施加张力。