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61. 发明授权

US08247246B2 Semiconductor device and manufacturing method thereof, delamination method, and transferring method 有权
标题翻译：半导体装置及其制造方法，分层方法和转印方法
公开(公告)号：US08247246B2
公开(公告)日：2012-08-21
申请号：US12766318
申请日：2010-04-23
申请人： Junya Maruyama , Toru Takayama , Yumiko Ohno , Shunpei Yamazaki
发明人： Junya Maruyama , Toru Takayama , Yumiko Ohno , Shunpei Yamazaki
IPC分类号： H01L21/30 , H01L31/18
CPC分类号： H01L27/1218 , H01L21/76251 , H01L27/1214 , H01L27/1248 , H01L27/1266 , H01L29/78603 , H01L33/24 , H01L33/44 , H01L33/56 , H01L33/62 , H01L2221/68368
摘要： A technique for forming a TFT element over a substrate having flexibility typified by a flexible plastic film is tested. When a structure in which a light-resistant layer or a reflective layer is employed to prevent the damage to the delamination layer, it is difficult to fabricate a transmissive liquid crystal display device or a light emitting device which emits light downward.A substrate and a delamination film are separated by a physical means, or a mechanical means in a state where a metal film formed over a substrate, and a delamination layer comprising an oxide film including the metal and a film comprising silicon, which is formed over the metal film, are provided. Specifically, a TFT obtained by forming an oxide layer including the metal over a metal film; crystallizing the oxide layer by heat treatment; and performing delamination in a layer of the oxide layer or at both of the interface of the oxide layer is formed.
摘要翻译：测试了以柔性塑料膜为代表的柔性基板上形成TFT元件的技术。当采用耐光层或反射层以防止对分层的损害的结构时，难以制造向下发光的透射型液晶显示装置或发光装置。在基板上形成金属膜的状态下，通过物理手段或机械装置分离基板和分层膜，以及包含包含金属的氧化物膜和包含硅的膜的分层，其形成在提供金属膜。具体地说，通过在金属膜上形成包含金属的氧化物层而获得的TFT; 通过热处理使氧化层结晶; 并且在氧化物层的一层或氧化物层的界面上形成分层。

62. 发明申请

US20120126234A1 Semiconductor Apparatus and Fabrication Method of the Same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20120126234A1
公开(公告)日：2012-05-24
申请号：US13364361
申请日：2012-02-02
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L27/15
CPC分类号： H01L23/12 , H01L27/12 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L27/3244 , H01L27/3281 , H01L29/78603 , H01L51/003 , H01L51/0097 , H01L51/524 , H01L51/529 , H01L51/56 , H01L2221/68368 , H01L2227/326 , H01L2251/5338 , H01L2924/0002 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.
摘要翻译：本发明的目的是提供一种能够防止由于水分或氧气的渗透引起的劣化的半导体器件，例如具有形成在塑料基板上的有机发光器件的发光装置，以及使用塑料基板的液晶显示装置。根据本发明，形成在玻璃基板或石英基板（TFT，具有有机化合物的发光器件，液晶器件，存储器件，薄膜二极管，pin-junction硅光电转换器，硅电阻元件等）与衬底分离，并转移到具有高导热性的塑料衬底。

63. 发明授权

US08173520B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08173520B2
公开(公告)日：2012-05-08
申请号：US13217311
申请日：2011-08-25
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L21/30
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.
摘要翻译：本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层要完全去皮。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。

64. 发明授权

US07547612B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07547612B2
公开(公告)日：2009-06-16
申请号：US11713606
申请日：2007-03-05
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L21/30
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.
摘要翻译：本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层要完全去皮。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。当在衬底上设置金属层11时，提供与金属层11接触的氧化物层12，形成被剥离层13，并且用激光束照射金属层11以进行氧化并形成金属氧化物层16，金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面处可以进行清晰的分离。

65. 发明授权

US07189631B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07189631B2
公开(公告)日：2007-03-13
申请号：US10694803
申请日：2003-10-29
申请人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
发明人： Shunpei Yamazaki , Toru Takayama , Junya Maruyama , Yumiko Ohno
IPC分类号： H01L21/30 , H01L21/84
CPC分类号： H01L27/1218 , H01L23/291 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L29/66757 , H01L29/78603 , H01L51/0002 , H01L51/0021 , H01L51/0024 , H01L51/003 , H01L2221/68368 , H01L2924/0002 , Y10S438/928 , Y10S438/982 , H01L2924/00
摘要： It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.When a metal layer 11 is provided over a substrate, an oxide layer 12 is provided in contact with the metal layer 11, a layer to be peeled 13 is formed, and the metal layer 11 is irradiated with a laser beam to perform oxidization and form a metal oxide layer 16, a clear separation is possible with a physical means within the metal oxide layer 12 or at an interface between the metal oxide layer 16 and the oxide layer 12.
摘要翻译：本发明的目的是提供一种不会对被剥离层造成损伤的剥离方法，并且不仅使表面积小的层被剥离，而且还允许具有大表面积的被剥离层要完全去皮。此外，本发明的另一个目的是将要剥离的层粘合到各种基材上以提供更轻的半导体器件及其制造方法。特别地，目的是将由TFT表示的各种元素（薄膜二极管，包含硅的PIN结的光电转换元件或硅电阻元件）粘合到柔性膜上以提供更轻的半导体器件和其制造方法。当在衬底上设置金属层11时，提供与金属层11接触的氧化物层12，形成被剥离层13，并且用激光束照射金属层11以进行氧化并形成金属氧化物层16，金属氧化物层12内的物理手段或金属氧化物层16与氧化物层12之间的界面处可以进行清晰的分离。

66. 发明授权

US07268487B2 Light-emitting apparatus 有权
标题翻译：发光装置
公开(公告)号：US07268487B2
公开(公告)日：2007-09-11
申请号：US10662357
申请日：2003-09-16
申请人： Shunpei Yamazaki , Toru Takayama , Takuya Tsurume , Yuugo Goto
发明人： Shunpei Yamazaki , Toru Takayama , Takuya Tsurume , Yuugo Goto
IPC分类号： H05B33/12
CPC分类号： H01L51/529 , H01L27/3244 , H01L51/5246 , H01L51/5253
摘要： The present invention is to solve the problems of heat release and a metal material corrosion due to fluorine that are arisen in the case of using a film containing fluoroplastics (Teflon®) as a protective film for a light-emitting device. In the present invention, an inorganic film is formed after forming a light-emitting device, and a film containing fluoroplastics is formed thereon for avoiding contact with a metal material for forming the light-emitting device, as a result, a metal material corrosion due to fluorine in the film containing fluoroplastics can be prevented. In addition, the inorganic insulating film has a function of preventing fluorine in the film containing fluoroplastics from reacting to the metal material (barrier property), in addition, the inorganic insulating film is formed of a material having high heat conductivity for releasing heat generated in a light-emitting device.
摘要翻译：本发明是为了解决在使用含有氟塑料（Teflon）的膜作为发光元件的保护膜的情况下产生的放热和金属材料腐蚀的问题。在本发明中，在形成发光装置之后形成无机膜，并且在其上形成含有氟塑料的膜，以避免与用于形成发光装置的金属材料接触，结果导致金属材料腐蚀可以防止含氟塑料的膜中的氟。此外，无机绝缘膜具有防止含氟塑料的膜与金属材料反应的氟（阻隔性）的功能，另外，无机绝缘膜由具有高导热性的材料形成，用于释放在发光装置。

67. 发明授权

US08900970B2 Method for manufacturing a semiconductor device using a flexible substrate 有权
标题翻译：使用柔性基板制造半导体器件的方法
公开(公告)号：US08900970B2
公开(公告)日：2014-12-02
申请号：US11735009
申请日：2007-04-13
申请人： Junya Maruyama , Yasuhiro Jinbo , Hironobu Shoji , Hideaki Kuwabara , Shunpei Yamazaki
发明人： Junya Maruyama , Yasuhiro Jinbo , Hironobu Shoji , Hideaki Kuwabara , Shunpei Yamazaki
IPC分类号： H01L21/30 , H01L21/78 , H01L51/00 , H01L27/12 , H01L23/64 , G06K19/077 , H01L23/66 , G02F1/167 , H01L23/498 , G02F1/136
CPC分类号： H01L21/7806 , G02F1/167 , G02F2001/13613 , G06K19/07749 , H01L23/49855 , H01L23/645 , H01L23/66 , H01L27/1214 , H01L27/1218 , H01L27/1266 , H01L51/003 , H01L51/0097 , H01L2223/6677 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/3011 , Y02E10/549 , Y02P70/521 , H01L2924/00
摘要： A technique for peeling an element manufactured through a process at relatively low temperature (lower than 500° C.) from a substrate and transferring the element to a flexible substrate (typically, a plastic film). With the use of an existing manufacturing device for a large glass substrate, a molybdenum film (Mo film) is formed over a glass substrate, an oxide film is formed over the molybdenum film, and an element is formed over the oxide film through a process at relatively low temperature (lower than 500° C.). Then, the element is peeled from the glass substrate and transferred to a flexible substrate.
摘要翻译：一种从基板剥离通过相对较低温度（低于500℃）的工艺制造的元件并将元件转移到柔性基板（通常为塑料膜）的技术。通过使用现有的大型玻璃基板的制造装置，在玻璃基板上形成钼膜（Mo膜），在钼膜上形成氧化膜，通过工序在氧化膜上形成元件在相对较低的温度（低于500℃）。然后，将元件从玻璃基板剥离并转移到柔性基板。

68. 发明授权

US07858411B2 Method for fabricating light emitting device and method for fabricating liquid crystal display device 有权
标题翻译：制造发光器件的方法和用于制造液晶显示器件的方法
公开(公告)号：US07858411B2
公开(公告)日：2010-12-28
申请号：US12259748
申请日：2008-10-28
申请人： Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
发明人： Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
IPC分类号： H01L33/00
CPC分类号： H01L27/1218 , G02F1/133305 , G02F1/1339 , G02F1/13394 , G02F1/1341 , G02F1/1368 , H01L21/2007 , H01L21/67092 , H01L21/6835 , H01L21/76251 , H01L27/1214 , H01L27/124 , H01L27/1259 , H01L27/1262 , H01L27/1266 , H01L27/156 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L29/66757 , H01L29/78603 , H01L51/0024 , H01L51/003 , H01L51/0097 , H01L51/56 , H01L2221/6835 , H01L2221/68363 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , H01L2924/30105 , H01L2924/3025 , Y02E10/549
摘要： The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object originally having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
摘要翻译：本发明的目的是提供一种用于制造半导体器件的方法，该半导体器件具有以曲率结合到基底材料上的剥离层。特别地，本发明的目的是提供一种用于制造具有曲率的显示器的方法，更具体地说，提供一种发光器件，该发光器件具有键合到具有曲率的基底材料的OLED。对原来具有曲率和弹性的支撑件施加外力，并且将支撑件结合到形成在基板上的剥离层。然后，当基板被剥离时，支撑件通过恢复力返回到原始形状，并且剥离层也沿着支撑件的形状弯曲。最后，原来具有曲率的转印体被粘合到剥离层上，然后完成具有所需曲率的装置。

69. 发明申请

US20090291516A1 Peeling Method and Method of Manufacturing Semiconductor Device 有权
标题翻译：剥离方法和制造半导体器件的方法
公开(公告)号：US20090291516A1
公开(公告)日：2009-11-26
申请号：US12477966
申请日：2009-06-04
申请人： Toru Takayama , Junya Maruyama , Shunpei Yamazaki
发明人： Toru Takayama , Junya Maruyama , Shunpei Yamazaki
IPC分类号： H01L21/50
CPC分类号： H01L27/1266 , B32B7/06 , B32B43/006 , B32B2310/0843 , B32B2457/08 , B32B2457/14 , G02F1/1368 , G02F2001/13613 , H01L21/3221 , H01L21/76251 , H01L27/1214 , H01L27/3244 , H01L27/3246 , H01L27/3248 , H01L27/3258 , H01L29/6675 , H01L29/66757 , H01L29/78663 , H01L51/003 , H01L51/0097 , H01L51/5237 , H01L51/5246 , H01L51/529 , H01L51/56 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , Y10S438/977 , Y10T156/1137 , Y10T156/1939
摘要： There is provided a peeling method capable of preventing a damage to a layer to be peeled. Thus, not only a layer to be peeled having a small area but also a layer to be peeled having a large area can be peeled over the entire surface at a high yield. Processing for partially reducing contact property between a first material layer (11) and a second material layer (12) (laser light irradiation, pressure application, or the like) is performed before peeling, and then peeling is conducted by physical means. Therefore, sufficient separation can be easily conducted in an inner portion of the second material layer (12) or an interface thereof.
摘要翻译：提供了能够防止对被剥离层的损伤的剥离方法。因此，不仅可以以高产率在整个表面上剥离具有小面积的被剥离层，而且可以在整个表面上剥离具有大面积的待剥离层。在剥离之前进行用于部分降低第一材料层（11）和第二材料层（12）之间的接触性能（激光照射，压力施加等）的处理，然后通过物理手段进行剥离。因此，能够容易地在第二材料层（12）的内部或其界面进行分离。

70. 发明授权

US07446339B2 Display device having a curved surface 有权
标题翻译：具有曲面的显示装置
公开(公告)号：US07446339B2
公开(公告)日：2008-11-04
申请号：US11422980
申请日：2006-06-08
申请人： Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
发明人： Shunpei Yamazaki , Masakazu Murakami , Toru Takayama , Junya Maruyama
IPC分类号： H01L29/06
CPC分类号： H01L27/1218 , G02F1/133305 , G02F1/1339 , G02F1/13394 , G02F1/1341 , G02F1/1368 , H01L21/2007 , H01L21/67092 , H01L21/6835 , H01L21/76251 , H01L27/1214 , H01L27/124 , H01L27/1259 , H01L27/1262 , H01L27/1266 , H01L27/156 , H01L27/3244 , H01L27/3248 , H01L27/3262 , H01L27/3276 , H01L29/66757 , H01L29/78603 , H01L51/0024 , H01L51/003 , H01L51/0097 , H01L51/56 , H01L2221/6835 , H01L2221/68363 , H01L2227/323 , H01L2227/326 , H01L2251/5338 , H01L2924/30105 , H01L2924/3025 , Y02E10/549
摘要： The object of the invention is to provide a method for fabricating a semiconductor device having a peeled layer bonded to a base material with curvature. Particularly, the object is to provide a method for fabricating a display with curvature, more specifically, a light emitting device having an OLED bonded to a base material with curvature. An external force is applied to a support originally having curvature and elasticity, and the support is bonded to a peeled layer formed over a substrate. Then, when the substrate is peeled, the support returns into the original shape by the restoring force, and the peeled layer as well is curved along the shape of the support. Finally, a transfer object original having curvature is bonded to the peeled layer, and then a device with a desired curvature is completed.
摘要翻译：本发明的目的是提供一种用于制造半导体器件的方法，该半导体器件具有以曲率结合到基底材料上的剥离层。特别地，本发明的目的是提供一种用于制造具有曲率的显示器的方法，更具体地说，提供一种发光器件，该发光器件具有键合到具有曲率的基底材料的OLED。对原来具有曲率和弹性的支撑件施加外力，并且将支撑件结合到形成在基板上的剥离层。然后，当基板被剥离时，支撑件通过恢复力返回到原始形状，并且剥离层也沿着支撑件的形状弯曲。最后，将具有曲率的转印体原件粘合到剥离层，然后完成具有所需曲率的装置。

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