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61. 发明申请

US20050170352A1 Use of biomarkers to detect breast cancer 审中-公开
标题翻译：使用生物标志物检测乳腺癌
公开(公告)号：US20050170352A1
公开(公告)日：2005-08-04
申请号：US10506725
申请日：2003-03-06
申请人： Daniel Chan , Zhen Zhang , Jinong Li
发明人： Daniel Chan , Zhen Zhang , Jinong Li
IPC分类号： G01N33/574 , C12Q1/68
CPC分类号： G01N33/57415
摘要： The present invention relates to a method for identification of tmor biomarkers markers for breast cancer, with high specificity and sensitivity. Preferred methods of the invention include qualifying breast cancer status in a subject comprising: (a) measuring at least one of the disclosed biomarkers in a sample from the subject; and (b) correlating the measurement with breast cancer status. The invention further relates to kits for qualifying breast cancer status in a subject.
摘要翻译：本发明涉及一种具有高特异性和灵敏度的用于鉴定乳腺癌组织标记物的标记物的方法。本发明的优选方法包括在受试者中确定乳腺癌状态，包括：（a）测量来自受试者的样品中所公开的生物标志物中的至少一种; 和（b）将测量与乳腺癌状态相关联。本发明还涉及用于在受试者中鉴定乳腺癌状态的试剂盒。

62. 发明授权

US06309816B1 Methods for diagnosing cancer by measuring creatine kinase 失效
标题翻译：通过测量肌酸激酶诊断癌症的方法
公开(公告)号：US06309816B1
公开(公告)日：2001-10-30
申请号：US09060703
申请日：1998-04-15
申请人： Zhen Zhang , Stephen D. Barnhill , Ramananda Madyastha , Hong Zhang
发明人： Zhen Zhang , Stephen D. Barnhill , Ramananda Madyastha , Hong Zhang
IPC分类号： C12Q100
CPC分类号： G01N33/57434 , G01N33/574 , G01N2333/912
摘要： The diagnostic method of the present invention provides a method of diagnosing prostate cancer by measuring the concentration of prostate specific antigen and creatine kinase enzyme activity. A mathematical relationship between the two concentrations is then determined. If the prostate specific antigen concentration in the blood is normal or near normal and the creatine kinase enzyme value is lower than normal, than there is a high likelihood that the patient has prostate cancer. The present invention also includes the measurement of creatine kinase enzyme inhibitor in the serum of a patient to determine if the patient has a high likelihood of cancer.
摘要翻译：本发明的诊断方法通过测定前列腺特异性抗原和肌酸激酶活性的浓度来提供诊断前列腺癌的方法。然后确定两个浓度之间的数学关系。如果血液中的前列腺特异性抗原浓度正常或接近正常，且肌酸激酶的值低于正常值，则比患者具有前列腺癌的可能性高。本发明还包括测量患者血清中的肌酸激酶酶抑制剂以确定患者是否具有很高的癌症可能性。

63. 发明授权

US09838673B2 Method and apparatus for adjusting viewing area, and device capable of three-dimension displaying video signal 有权
公开(公告)号：US09838673B2
公开(公告)日：2017-12-05
申请号：US14354949
申请日：2011-12-21
申请人： Yongping Miao , Zhen Zhang , Junyu Luo , Weisong Gao
发明人： Yongping Miao , Zhen Zhang , Junyu Luo , Weisong Gao
IPC分类号： H04N13/04
CPC分类号： H04N13/302 , H04N13/31 , H04N13/327 , H04N13/366 , H04N13/373 , H04N13/376 , H04N13/38 , H04N13/383
摘要： Disclosed in the present application are a method and device for determining the position of a viewer and adjusting a viewing area, and a device for displaying three-dimensional video signals, such that the position of a viewer in front of an electronic device can be accurately determined and the viewing area can be adjusted according to the specific position, enabling the viewer to be unaware of any sudden viewing change when watching 3D signals. The method for determining the position of the viewer is applied in an electronic device comprising a display screen capable of displaying three-dimensional video signals. The viewing areas of the electronic device include a three-dimensional display area and a non-three-dimensional display area. The method comprises: acquiring the image in front of the electronic device; judging whether the image contains the face image of the viewer; if the image contains the face image, identifying at least one feature in the face image to determine the position of the viewer; according to the at least one feature, determining whether the viewing area of the viewer is a three-dimensional display area or a non-three-dimensional display area.

64. 发明授权

US09551703B2 High precision quantitative assay composition and methods of use therefor 有权
标题翻译：高精度定量测定组合物及其使用方法
公开(公告)号：US09551703B2
公开(公告)日：2017-01-24
申请号：US13388978
申请日：2010-08-04
申请人： Zhen Zhang , Daniel W. Chan
发明人： Zhen Zhang , Daniel W. Chan
IPC分类号： G01N33/543 , G01N33/58 , B01J19/00
CPC分类号： G01N33/543 , B01J19/0046 , G01N33/582
摘要： The invention features compositions and methods that are useful for precisely determining the amount of one or more analytes present in a sample. In one aspect, the invention provides a composition for measuring the abundance of one or more target analytes in a sample, where the composition contains a set of detection units for each analyte fixed to a substrate (e.g., a membrane, bead, filter, chip, polymer-based film or glass slide, or other printable surface), where each detection unit contains a discrete amount of a capture agent that specifically binds the target analyte, and the amount of capturing agent varies over the set to form a concentration gradient.
摘要翻译：本发明的特征在于可用于精确测定样品中存在的一种或多种分析物的量的组合物和方法。一方面，本发明提供了一种用于测量样品中一种或多种目标分析物的丰度的组合物，其中组合物包含用于固定到基底上的每种分析物的一组检测单元（例如，膜，珠粒，过滤器，芯片，基于聚合物的膜或载玻片或其它可印刷的表面），其中每个检测单元包含离散量的特异性结合靶分析物的捕获剂，并且捕获剂的量在组上变化以形成浓度梯度。

65. 发明授权

US08900935B2 Deposition on a nanowire using atomic layer deposition 有权
标题翻译：使用原子层沉积在纳米线上沉积
公开(公告)号：US08900935B2
公开(公告)日：2014-12-02
申请号：US13013067
申请日：2011-01-25
申请人： Dechao Guo , Zhengwen Li , Kejia Wang , Zhen Zhang , Yu Zhu
发明人： Dechao Guo , Zhengwen Li , Kejia Wang , Zhen Zhang , Yu Zhu
IPC分类号： H01L29/775 , H01L21/336 , H01L51/05 , H01L29/78 , B82Y40/00 , H01L29/66 , H01L29/06 , H01L27/12 , H01L29/47 , H01L21/84 , B82Y30/00 , H01L51/00
CPC分类号： H01L29/0673 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/84 , H01L21/845 , H01L27/1203 , H01L27/1211 , H01L29/42392 , H01L29/47 , H01L29/6675 , H01L29/7839 , H01L51/0048 , H01L51/0516 , H01L51/0558 , H01L51/057 , Y10S977/762 , Y10S977/938
摘要： In one exemplary embodiment, a method includes: providing a semiconductor device having a substrate, a nanowire, a first structure and a second structure, where the nanowire is suspended between the first structure and the second structure, where the first structure and the second structure overly the substrate; and performing atomic layer deposition to deposit a film on at least a portion of the semiconductor device, where performing atomic layer deposition to deposit the film includes performing atomic layer deposition to deposit the film on at least a surface of the nanowire.
摘要翻译：在一个示例性实施例中，一种方法包括：提供具有衬底，纳米线，第一结构和第二结构的半导体器件，其中纳米线悬挂在第一结构和第二结构之间，其中第一结构和第二结构过度的底物; 以及进行原子层沉积以在所述半导体器件的至少一部分上沉积膜，其中进行原子层沉积以沉积所述膜包括进行原子层沉积以将所述膜沉积在所述纳米线的至少一个表面上。

66. 发明授权

US08822816B2 Niobium thin film stress relieving layer for thin-film solar cells 有权
标题翻译：薄膜太阳能电池铌薄膜应力消除层
公开(公告)号：US08822816B2
公开(公告)日：2014-09-02
申请号：US13534519
申请日：2012-06-27
申请人： Qing Cao , Zhengwen Li , Fei Liu , Zhen Zhang
发明人： Qing Cao , Zhengwen Li , Fei Liu , Zhen Zhang
IPC分类号： H01L31/0264 , H01L31/18
CPC分类号： H01L31/02167 , H01L31/022425 , H01L31/022441 , H01L31/022475 , H01L31/0296 , H01L31/0322 , H01L31/0326 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： A method of forming a photovoltaic device includes forming a thermal stress relieving layer on top of a substrate and forming a sacrificial back electrode metal layer on the thermal stress relieving layer. A semiconductor photon absorber layer is formed on the sacrificial back electrode metal layer, and the absorber layer is reacted with substantially an entire thickness of the sacrificial back electrode metal layer, thereby forming a back ohmic contact comprising a metallic compound of the sacrificial back electrode metal layer and the absorber layer, in combination with the thermal stress relieving layer.
摘要翻译：形成光伏器件的方法包括在衬底的顶部形成热应力消除层，并在热应力消除层上形成牺牲背电极金属层。在牺牲背电极金属层上形成半导体光子吸收层，吸收层与牺牲背极金属层的大致整个厚度反应，形成包含牺牲背电极金属的金属化合物的反欧姆接触层和吸收层，与热应力消除层组合。

67. 发明授权

US08664721B2 FET with FUSI gate and reduced source/drain contact resistance 有权
标题翻译：具有FUSI栅极的FET和降低的源极/漏极接触电阻
公开(公告)号：US08664721B2
公开(公告)日：2014-03-04
申请号：US13569741
申请日：2012-08-08
申请人： Christian Lavoie , Tak H. Ning , Qiqing Ouyang , Paul Solomon , Zhen Zhang
发明人： Christian Lavoie , Tak H. Ning , Qiqing Ouyang , Paul Solomon , Zhen Zhang
IPC分类号： H01L27/12 , H01L29/45
CPC分类号： H01L29/66575 , H01L21/265 , H01L21/28097 , H01L29/458 , H01L29/4908 , H01L29/4975 , H01L29/66507 , H01L29/66545 , H01L29/66772 , H01L29/78 , H01L29/7839
摘要： A field effect transistor (FET) includes source/drain silicide regions located in a silicon layer; source/drain interfacial layers located in between the source/drain silicide regions and the silicon layer; and a fully silicided gate stack comprising a gate oxide layer located on the silicon layer, a gate interfacial layer located on the gate oxide layer, and a gate silicide located on the gate interfacial layer.
摘要翻译：场效应晶体管（FET）包括位于硅层中的源极/漏极硅化物区域; 位于源/漏硅化物区域和硅层之间的源极/漏极界面层; 以及包括位于硅层上的栅极氧化物层，位于栅极氧化物层上的栅极界面层和位于栅极界面层上的栅极硅化物的完全硅化栅极堆叠。

68. 发明授权

US08658530B2 Method of fabricating an epitaxial Ni silicide film 有权
标题翻译：制造外延Ni硅化物膜的方法
公开(公告)号：US08658530B2
公开(公告)日：2014-02-25
申请号：US13612240
申请日：2012-09-12
申请人： Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
发明人： Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
IPC分类号： H01L21/4763 , H01L21/477 , H01L21/36
CPC分类号： H01L29/7839 , H01L21/28052 , H01L21/28537 , H01L29/47 , H01L29/665 , H01L29/66643 , H01L29/66772 , H01L29/78618
摘要： An epitaxial Ni silicide film that is substantially non-agglomerated at high temperatures, and a method for forming the epitaxial Ni silicide film, is provided. The Ni silicide film of the present disclosure is especially useful in the formation of ETSOI (extremely thin silicon-on-insulator) Schottky junction source/drain FETs. The resulting epitaxial Ni silicide film exhibits improved thermal stability and does not agglomerate at high temperatures.
摘要翻译：提供了在高温下基本上未附聚的外延Ni硅化物膜，以及形成外延Ni硅化物膜的方法。本公开的Ni硅化物膜特别可用于形成ETSOI（极薄的绝缘体上硅）肖特基结源极/漏极FET。得到的外延Ni硅化物膜具有改善的热稳定性，并且在高温下不聚结。

69. 发明授权

US08489550B2 Multi-tenancy data storage and access method and apparatus 有权
标题翻译：多租户数据存储和访问方法及装置
公开(公告)号：US08489550B2
公开(公告)日：2013-07-16
申请号：US13467228
申请日：2012-05-09
申请人： Wenhao An , Bo Gao , Chang Jie Guo , Zhong Su , Wei Sun , Zhi Hu Wang , Zhen Zhang
发明人： Wenhao An , Bo Gao , Chang Jie Guo , Zhong Su , Wei Sun , Zhi Hu Wang , Zhen Zhang
IPC分类号： G06F7/00
CPC分类号： G06F17/30448 , G06F17/30566
摘要： A method, apparatus, and a computer program product for storing and accessing multi-tenancy data. The method includes the steps of: creating a plurality of table sets in one or more databases, wherein each table set is used to store data of a group of tenants selected from a plurality of tenants; accessing data of a tenant in a table set in response to receiving a data access request from the tenant; and recording relationships between the tenants and the table sets in a multi-tenancy metadata repository, wherein the step of accessing the data of the tenant comprises the steps of finding the table set by querying the metadata repository and accessing the data of the tenant in the table set based on the result received from the query of the metadata repository.
摘要翻译：一种用于存储和访问多租户数据的方法，装置和计算机程序产品。该方法包括以下步骤：在一个或多个数据库中创建多个表集合，其中每个表集合用于存储从多个租户中选择的一组租户的数据; 响应于从租户接收到数据访问请求，访问表中的租户的数据; 以及在多租户元数据存储库中记录所述租户和所述表集合之间的关系，其中，访问所述承租人的数据的步骤包括以下步骤：通过查询所述元数据存储库并访问所述租户的数据来查找所述表基于从元数据存储库的查询获得的结果的表集合。

70. 发明授权

US08482084B2 SOI schottky source/drain device structure to control encroachment and delamination of silicide 失效
标题翻译： SOI肖特基源/漏极器件结构，以控制硅化物的侵蚀和分层
公开(公告)号：US08482084B2
公开(公告)日：2013-07-09
申请号：US12726789
申请日：2010-03-18
申请人： Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
发明人： Marwan H. Khater , Christian Lavoie , Bin Yang , Zhen Zhang
IPC分类号： H01L29/76 , H01L31/00
CPC分类号： H01L29/78654 , H01L29/7839
摘要： A Schottky field effect transistor is provided that includes a substrate having a layer of semiconductor material atop a dielectric layer, wherein the layer of semiconductor material has a thickness of less than 10.0 nm. A gate structure is present on the layer of semiconductor material. Raised source and drain regions comprised of a metal semiconductor alloy are present on the layer of semiconductor material on opposing sides of the gate structure. The raised source and drain regions are Schottky source and drain regions. In one embodiment, a first portion of the Schottky source and drain regions that is adjacent to a channel region of the Schottky field effect transistor contacts the dielectric layer, and a non-reacted semiconductor material is present between a second portion of the Schottky source and drain regions and the dielectric layer.
摘要翻译：提供一种肖特基场效应晶体管，其包括在电介质层顶上具有半导体材料层的衬底，其中半导体材料层的厚度小于10.0nm。栅极结构存在于半导体材料层上。在栅极结构的相对侧的半导体材料层上存在由金属半导体合金构成的凸起的源极和漏极区域。凸起的源极和漏极区域是肖特基源极和漏极区域。在一个实施例中，与肖特基场效应晶体管的沟道区相邻的肖特基源极和漏极区的第一部分接触电介质层，并且未反应的半导体材料存在于肖特基源的第二部分和漏区和电介质层。

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