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61. 发明授权

US4206491A Entry system 失效
标题翻译：入门系统
公开(公告)号：US4206491A
公开(公告)日：1980-06-03
申请号：US25646
申请日：1979-03-30
申请人： James R. Ligman , Peter Kaufman , Harry W. Kompanek , David K. Carlson
发明人： James R. Ligman , Peter Kaufman , Harry W. Kompanek , David K. Carlson
IPC分类号： G07C9/00 , E05B49/00
CPC分类号： G07C9/0069
摘要： A keyless system especially useful in controlling the doors and trunk of an automobile is disclosed. The overall system usually comprises an input station containing a keyboard, a signal processor, signal amplification means and an electromechanical grouping which converts the electrical output from the amplifier to mechanical movement in control of a lock. The system is activated by a touch control at the input keyboard and with the power section of the system energized, the lock is controlled in response to a proper sequence of digital input signals created by the operator. The input at the control station is described in terms of a keyboard having five selectors and resulting in approximately three thousand possible combinations for the base code. The signal processor responds to correct combinations of digital inputs with a drive signal. The signal processor is also programmable with temporary convenience codes which are loaded into the logic portion of the system with access preconditioned on entry of the base code.
摘要翻译：公开了一种特别适用于控制汽车的门和主干的无钥匙系统。整个系统通常包括一个输入站，它包含一个键盘，一个信号处理器，信号放大装置和一个机电组合，它将控制锁的放大器的电输出转换为机械运动。该系统通过输入键盘上的触摸控制被激活，并且系统的功率部分被激励，响应于由操作者创建的适当的数字输入信号序列来控制锁定。根据具有五个选择器的键盘来描述控制站的输入，并且导致用于基本码的大约三千种可能的组合。信号处理器响应数字输入与驱动信号的正确组合。信号处理器也可以用临时方便代码进行编程，这些代码被加载到系统的逻辑部分中，在基本代码输入时进行预处理。

62. 发明授权

US09476144B2 Method and apparatus for the selective deposition of epitaxial germanium stressor alloys 有权
标题翻译：用于选择性沉积外延锗应力合金的方法和装置
公开(公告)号：US09476144B2
公开(公告)日：2016-10-25
申请号：US13193506
申请日：2011-07-28
申请人： Errol Antonio C. Sanchez , David K. Carlson
发明人： Errol Antonio C. Sanchez , David K. Carlson
IPC分类号： C30B25/02 , C30B29/52 , C30B25/14 , C30B25/16 , C30B23/02 , C30B23/06 , C30B29/08
CPC分类号： C30B25/14 , C23C16/08 , C23C16/4412 , C23C16/4584 , C23C16/4586 , C30B23/02 , C30B23/06 , C30B23/063 , C30B23/066 , C30B25/10 , C30B25/16 , C30B29/08 , C30B29/52 , H01L21/02381 , H01L21/02532 , H01L21/02581 , H01L21/02636 , H01L29/1054
摘要： A method and apparatus for forming heterojunction stressor layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy formed on the substrate. The metal precursor is typically a metal halide, which may be provided by subliming a solid metal halide or by contacting a pure metal with a halogen gas. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components.
摘要翻译：描述了形成异质结应力层的方法和装置。将锗前体和金属前体提供到室，并在基板上形成锗 - 金属合金外延层。金属前体通常是金属卤化物，其可以通过升华固体金属卤化物或通过使纯金属与卤素气体接触来提供。前体可以通过喷头或通过侧入口提供，并且耦合到室的排气系统可以被单独加热以管理排气部件的冷凝。

63. 发明授权

US08603898B2 Method for forming group III/V conformal layers on silicon substrates 有权
标题翻译：在硅衬底上形成III / V族共形层的方法
公开(公告)号：US08603898B2
公开(公告)日：2013-12-10
申请号：US13436644
申请日：2012-03-30
申请人： Xinyu Bao , Errol Antonio C. Sanchez , David K. Carlson , Zhiyuan Ye
发明人： Xinyu Bao , Errol Antonio C. Sanchez , David K. Carlson , Zhiyuan Ye
IPC分类号： H01L21/20 , H01L21/36 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14 , C30B11/00 , C30B35/00
CPC分类号： H01L29/205 , H01L21/02381 , H01L21/02455 , H01L21/02538 , H01L21/0262 , H01L21/02694 , H01L29/267 , Y10T117/1008
摘要： A method for forming a conformal group III/V layer on a silicon substrate and the resulting substrate with the group III/V layers formed thereon. The method includes removing the native oxide from the substrate, positioning a substrate within a processing chamber, heating the substrate to a first temperature, cooling the substrate to a second temperature, flowing a group III precursor into the processing chamber, maintaining the second temperature while flowing a group III precursor and a group V precursor into the processing chamber until a conformal layer is formed, heating the processing chamber to an annealing temperature, while stopping the flow of the group III precursor, and cooling the processing chamber to the second temperature. Deposition of the III/V layer may be made selective through the use of halide gas etching which preferentially etches dielectric regions.
摘要翻译：一种在硅衬底上形成保形III / V层的方法，其上形成有III / V层的所得衬底。该方法包括从衬底去除原生氧化物，将衬底定位在处理室内，将衬底加热至第一温度，将衬底冷却至第二温度，将III族前体流入处理室，保持第二温度，同时将III族前体和V族前体流入处理室，直到形成共形层，同时停止III族前体的流动，将处理室加热至退火温度，并将处理室冷却至第二温度。可以通过使用优先蚀刻电介质区域的卤化物气蚀刻来选择性地制备III / V层的沉积。

64. 发明申请

US20120247386A1 METHOD AND APPARATUS FOR THE SELECTIVE DEPOSITION OF EPITAXIAL GERMANIUM STRESSOR ALLOYS 有权
标题翻译：外源锗锗合金选择性沉积的方法和装置
公开(公告)号：US20120247386A1
公开(公告)日：2012-10-04
申请号：US13193506
申请日：2011-07-28
申请人： Errol Antonio C. Sanchez , David K. Carlson
发明人： Errol Antonio C. Sanchez , David K. Carlson
IPC分类号： C30B25/02 , C30B25/10 , C30B25/16 , C30B25/12 , C30B25/08 , C30B25/14
CPC分类号： C30B25/14 , C23C16/08 , C23C16/4412 , C23C16/4584 , C23C16/4586 , C30B23/02 , C30B23/06 , C30B23/063 , C30B23/066 , C30B25/10 , C30B25/16 , C30B29/08 , C30B29/52 , H01L21/02381 , H01L21/02532 , H01L21/02581 , H01L21/02636 , H01L29/1054
摘要： A method and apparatus for forming heterojunction stressor layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy formed on the substrate. The metal precursor is typically a metal halide, which may be provided by subliming a solid metal halide or by contacting a pure metal with a halogen gas. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components.
摘要翻译：描述了形成异质结应力层的方法和装置。将锗前体和金属前体提供到室，并在基板上形成锗 - 金属合金外延层。金属前体通常是金属卤化物，其可以通过升华固体金属卤化物或通过使纯金属与卤素气体接触来提供。前体可以通过喷头或通过侧入口提供，并且耦合到室的排气系统可以被单独加热以管理排气部件的冷凝。

65. 发明申请

US20090314205A1 SEMICONDUCTOR PROCESS CHAMBER VISION AND MONITORING SYSTEM 有权
标题翻译：半导体过程室视觉和监测系统
公开(公告)号：US20090314205A1
公开(公告)日：2009-12-24
申请号：US12144485
申请日：2008-06-23
申请人： Kailash K. Patalay , Craig Metzner , David K. Carlson
发明人： Kailash K. Patalay , Craig Metzner , David K. Carlson
IPC分类号： B05C11/00
CPC分类号： G02B23/2492
摘要： A system for monitoring a process inside a high temperature semiconductor process chamber by capturing images is disclosed. Images are captured through a borescope by a camera. The borescope is protected from high temperatures by a reflective sheath and an Infrared (IR) cur-off filter. Images can be viewed on a monitor and can be recorded by a video recording device. Images can also be processed by a machine vision system. The system can monitor the susceptor and a substrate on the susceptor and surrounding structures. Deviations from preferred geometries of the substrate and deviations from preferred positions of susceptor and the substrate can be detected. Actions based on the detections of deviations can be taken to improve the performance of the process. Illumination of a substrate by a laser for detecting deviations in substrate geometry and position is also disclosed.
摘要翻译：公开了一种用于通过捕获图像监视高温半导体处理室内的处理的系统。照相机通过管道镜捕获图像。通过反射护套和红外线（IR）截止滤波器，保护套管免受高温的影响。可以在监视器上观看图像，并且可以由视频记录装置记录。图像也可以由机器视觉系统处理。该系统可以监测基座和基座和周围的结构。可以检测到偏离衬底的优选几何形状和偏离基座和衬底的优选位置。可以采取基于偏差检测的操作来改善过程的性能。还公开了用于检测基板几何形状和位置的偏差的用于激光的衬底的照明。

66. 发明授权

US06489220B2 Method and a system for sealing an epitaxial silicon layer on a substrate 失效
公开(公告)号：US06489220B2
公开(公告)日：2002-12-03
申请号：US10140584
申请日：2002-05-06
申请人： David K. Carlson , Dale R. Du Bois
发明人： David K. Carlson , Dale R. Du Bois
IPC分类号： H01L2120
CPC分类号： C30B33/005 , C30B29/06 , H01L21/31662
摘要： A system for processing a wafer is provided. Ultraviolet light radiates through a first amount of oxygen gas in an ozone generation chamber so that the first amount of oxygen gas is converted to a first amount of ozone gas. The first amount of ozone gas flows from the ozone generation chamber into a loadlock chamber and a wafer is exposed to the first amount of ozone gas. The ultraviolet light also radiates through a window and then through a second amount of oxygen gas in the loadlock chamber so that the second amount of unconverted gas is converted to a second amount of ozone gas. The wafer held by the wafer holder is also exposed to the second amount of ozone gas.

67. 发明授权

US06436194B1 Method and a system for sealing an epitaxial silicon layer on a substrate 失效
公开(公告)号：US06436194B1
公开(公告)日：2002-08-20
申请号：US09788121
申请日：2001-02-16
申请人： David K. Carlson , Dale R. Du Bois
发明人： David K. Carlson , Dale R. Du Bois
IPC分类号： C23C1600
CPC分类号： C30B33/005 , C30B29/06 , H01L21/31662
摘要： A system for processing a wafer is provided. Ultraviolet light radiates through a first amount of oxygen gas in an ozone generation chamber so that the first amount of oxygen gas is converted to a first amount of ozone gas. The first amount of ozone gas flows from the ozone generation chamber into a loadlock chamber and a wafer is exposed to the first amount of ozone gas. The ultraviolet light also radiates through a window and then through a second amount of oxygen gas in the loadlock chamber so that the second amount of unconverted gas is converted to a second amount of ozone gas. The wafer held by the wafer holder is also exposed to the second amount of ozone gas.

68. 发明授权

US06368567B2 Point-of-use exhaust by-product reactor 失效
标题翻译：使用废气副产物反应器
公开(公告)号：US06368567B2
公开(公告)日：2002-04-09
申请号：US09167269
申请日：1998-10-07
申请人： Paul B. Comita , Rekha Ranganathan , David K. Carlson , Dale R. DuBois , Hali J. L. Forstner
发明人： Paul B. Comita , Rekha Ranganathan , David K. Carlson , Dale R. DuBois , Hali J. L. Forstner
IPC分类号： C01B700
CPC分类号： C23C16/4412
摘要： A method and an apparatus is provided for removing wafer processing by-products from gas fluid exhaust systems utilizing an energy source placed within an exhaust channel either alone or in combination with a cleaning gas. The placement of the energy source in an exhaust channel enables emitted energy to react with wafer processing by-products to convert the by-product residues to more removable forms. Additionally provided is a cleaning gas source internal to the exhaust channel to further react with and convert exiting by-product residues to gaseous fluids.
摘要翻译：提供了一种方法和装置，用于单独或与清洁气体组合地利用放置在排气通道内的能量源从气体流体排放系统中除去晶片加工副产物。能量源在排气通道中的放置使得能够发射的能量与晶片加工副产物反应，以将副产物残余物转化为更可移除的形式。另外提供了排气通道内部的清洁气体源，以进一步与离子副产物残留物反应并转化成气体流体。

69. 发明授权

US06064799A Method and apparatus for controlling the radial temperature gradient of a wafer while ramping the wafer temperature 失效
标题翻译：用于在使晶片温度升高的同时控制晶片的径向温度梯度的方法和装置
公开(公告)号：US06064799A
公开(公告)日：2000-05-16
申请号：US71469
申请日：1998-04-30
申请人： Roger N. Anderson , David K. Carlson
发明人： Roger N. Anderson , David K. Carlson
IPC分类号： H01L21/205 , H01L21/00 , H01L21/26 , A21B2/00
CPC分类号： H01L21/67248 , H01L21/67115
摘要： A method and apparatus for controlling the radial temperature gradients of a wafer and a susceptor while ramping the temperature of the wafer and susceptor using a first heat source that is primarily directed at a central portion of the wafer, a second heat source that is primarily directed at an outer portion of the wafer, a third heat source that is primarily directed at a central portion of the susceptor, and a fourth heat source that is primarily directed at an outer portion of the susceptor. Ramping of the wafer and susceptor temperature is accomplished by applying power to the first, second, third and fourth heat sources. During ramping, the ratio of the first and second heat source powers is varied as a function of the wafer temperature and the ratio of the third and fourth heat source powers is varied as a function of the susceptor temperature.
摘要翻译：一种用于控制晶片和基座的径向温度梯度的方法和装置，同时使用主要针对晶片的中心部分的第一热源来升高晶片和基座的温度，主要定向的第二热源在晶片的外部，主要指向基座的中心部分的第三热源和主要指向基座的外部的第四热源。通过向第一，第二，第三和第四热源施加电力来实现晶片和基座温度的斜坡化。在斜坡期间，第一和第二热源功率的比率作为晶片温度的函数而变化，并且第三和第四热源功率的比值作为基座温度的函数而变化。

70. 发明授权

US6060788A Vehicle driver module 失效
标题翻译：车载驱动模块
公开(公告)号：US6060788A
公开(公告)日：2000-05-09
申请号：US190522
申请日：1998-11-12
申请人： David K. Carlson , Thomas S. Schaffer , Timothy J. Green
发明人： David K. Carlson , Thomas S. Schaffer , Timothy J. Green
IPC分类号： B60R16/00 , B60Q1/04
CPC分类号： B60R16/005
摘要： A vehicle driver module 10 with circuit 12 for receiving a first signal from a vehicle's controller and providing a second signal responsive thereto. The circuit 12 being placed on a substrate 14 constructed as a heat sink and preferably formed into a U-shaped configuration. A plurality of terminals 16 are attached to the substrate 14 with collars 18 made of an insulative material and having posts 20 constructed to fit within openings 50 of the substrate 14 be fastened thereto and retain the terminals 16 therein. Each of the terminals 16 include a prong 24 projecting out one side of the collar 18 and a clasp 26 out the opposite side of the collar 18. Each clasp 26 is constructed to provide a snap electrical contact at a predetermined location on the circuit on the substrate. The prongs 24 are selectively spaced so as to be received in and mesh with the standard vehicle relay junction block. The vehicle driver module 10 is a solid state, high-speed, high-power switch particularly suited for vehicle headlamps for daytime running lamp operation.
摘要翻译：具有电路12的车辆驾驶员模块10，用于从车辆控制器接收第一信号并响应于此提供第二信号。电路12被放置在构造为散热器并优选地形成为U形构造的衬底14上。多个端子16用由绝缘材料制成的套环18附接到基板14，并且具有构造成装配在基板14的开口50内并固定在其中的端子16的柱20。每个端子16包括从轴环18的一侧伸出的叉形件24和在套环18的相对侧上的扣环26.每个扣件26构造成在电路上的预定位置处提供卡扣电接触基质。叉24被选择性地间隔开以被接收在标准车辆继电器接线块中并与标准车辆继电器接线块相啮合。车辆驾驶员模块10是特别适用于日间行车灯操作的车辆用前照灯的固态高速大功率开关。

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