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61. 发明申请

US20080157214A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080157214A1
公开(公告)日：2008-07-03
申请号：US12071887
申请日：2008-02-27
申请人： Kazuaki Nakajima , Kyoichi Suguro
发明人： Kazuaki Nakajima , Kyoichi Suguro
IPC分类号： H01L27/092
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/76855 , H01L21/823814 , H01L21/823871 , H01L27/092
摘要： A semiconductor device is disclosed, which comprises a silicon substrate, a complementary MISFET circuit, an insulation film formed on the silicon substrate, a first contact hole formed in the insulation film, a first metal silicide layer formed on the bottom of the first contact hole, the first metal silicide layer being provided by a reaction of the n-channel impurity diffused region of the n-channel MISFET with a first metal, a second contact hole formed in the insulation film, a second metal silicide layer formed on the bottom of the second contact hole, the second metal silicide layer being provided by a reaction of the p-channel impurity diffused region of the p-channel MISFET with a second metal, and a work function of the second metal silicide layer being higher than that of the first metal silicide layer.
摘要翻译：公开了一种半导体器件，其包括硅衬底，互补MISFET电路，形成在硅衬底上的绝缘膜，形成在绝缘膜中的第一接触孔，形成在第一接触孔的底部上的第一金属硅化物层通过n沟道MISFET的n沟道杂质扩散区域与第一金属的反应提供第一金属硅化物层，形成在绝缘膜中的第二接触孔，形成在第二金属硅化物层的底部的第二金属硅化物层所述第二接触孔，所述第二金属硅化物层由所述p沟道MISFET的p沟道杂质扩散区域与第二金属的反应提供，并且所述第二金属硅化物层的功函数高于所述第二金属硅化物层的功函数第一金属硅化物层。

62. 发明申请

US20060237816A1 Semiconductor device and manufacturing method for the same 有权
公开(公告)号：US20060237816A1
公开(公告)日：2006-10-26
申请号：US11395278
申请日：2006-04-03
申请人： Kazuaki Nakajima , Kyoichi Suguro
发明人： Kazuaki Nakajima , Kyoichi Suguro
IPC分类号： H01L29/00
CPC分类号： H01L21/823842 , H01L21/28079 , H01L29/4958 , H01L29/66545 , H01L29/6656 , H01L29/6659 , H01L29/7833 , Y10S438/976
摘要： In a semiconductor substrate on which are formed an N-type MOS transistor and a P-type MOS transistor, the gate electrode of the N-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the gate electrode of the P-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the concentration of carbon contained in the former tungsten film is less than the concentration of carbon contained in the latter tungsten film.

63. 发明授权

US07041584B2 Method of manufacturing semiconductor device and the semiconductor device 失效
公开(公告)号：US07041584B2
公开(公告)日：2006-05-09
申请号：US10867765
申请日：2004-06-16
申请人： Masayuki Tanaka , Kazuaki Nakajima , Yoshitaka Tsunashima , Takayuki Ito , Kyoichi Suguro
发明人： Masayuki Tanaka , Kazuaki Nakajima , Yoshitaka Tsunashima , Takayuki Ito , Kyoichi Suguro
IPC分类号： H01L21/324 , H01L21/335
CPC分类号： H01L21/324 , H01L21/28518 , H01L21/32053 , H01L21/76843 , H01L21/76855 , H01L21/76864 , H01L21/76886 , H01L29/665
摘要： An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide layer is exposed, forming a metal nitride film on the bottom and side wall of the contact hole, carrying out a first heating process at 600° C. or lower on the substrate, carrying out, during the first heating process, a second heating process for 10 msec or shorter with light whose main wavelength is shorter than a light absorbing end of silicon, forming a contact conductor in the contact hole after the second heating process, and forming, on the insulating film, wiring that is electrically connected to the substrate through the contact conductor.

64. 发明申请

US20060081893A1 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060081893A1
公开(公告)日：2006-04-20
申请号：US11287405
申请日：2005-11-28
申请人： Kouji Matsuo , Kazuaki Nakajima
发明人： Kouji Matsuo , Kazuaki Nakajima
IPC分类号： H01L21/82 , H01L31/112
CPC分类号： H01L29/66545 , H01L21/28097 , H01L21/82345 , H01L29/4975 , H01L29/6656 , H01L29/6659
摘要： A semiconductor device comprises an n-type MIS transistor comprising a first gate insulating film and a first gate electrode including an MSix film formed on the first gate insulating film, where M represents a metal element selected from tungsten and molybdenum and x is greater than 1, i.e., x>1; and a p-type MIS transistor comprising a second gate insulating film and a second gate electrode including an MSiy film formed on the second gate insulating film, where y is not less than 0 and less than 1, i.e., 0≦y
摘要翻译：半导体器件包括n型MIS晶体管，其包括第一栅极绝缘膜和第一栅电极，所述第一栅极包括形成在第一栅极绝缘膜上的MSi膜，其中M表示选自钨的金属元素钼和x大于1，即x> 1; 以及p型MIS晶体管，其包括第二栅极绝缘膜和第二栅电极，所述第二栅电极包括形成在所述第二栅极绝缘膜上的MSi膜，其中y不小于0且小于1，即0 <= y <1。

65. 发明申请

US20050130418A1 Semiconductor device and manufacturing method therefor 有权
公开(公告)号：US20050130418A1
公开(公告)日：2005-06-16
申请号：US11047975
申请日：2005-02-02
申请人： Yasushi Akasaka , Kazuaki Nakajima , Kiyotaka Miyano , Kyoichi Suguro
发明人： Yasushi Akasaka , Kazuaki Nakajima , Kiyotaka Miyano , Kyoichi Suguro
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/336 , H01L21/60 , H01L21/768 , H01L29/49 , H01L21/20 , H01L21/44 , H01L21/4763 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76897 , H01L21/28061 , H01L21/32051 , H01L21/76885 , H01L29/4941 , H01L29/6659 , H01L2924/0002 , H01L2924/00
摘要： According to the manufacturing method of the semiconductor device of the present invention, an oxide film is formed on a metal film formed on a main surface of a semiconductor substrate by exposing the metal film to the oxidizing gas. The oxide film is then reduced in a reducing atmosphere, and a protection film is formed on the surface of the metal film reduced in the reducing step. In this manner, the damage to the surface of the metal film can be prevented.

66. 发明申请

US20050108299A1 Real-time Web sharing system 审中-公开
标题翻译：实时Web共享系统
公开(公告)号：US20050108299A1
公开(公告)日：2005-05-19
申请号：US10990387
申请日：2004-11-18
申请人： Kazuaki Nakajima
发明人： Kazuaki Nakajima
IPC分类号： G06F13/00 , G06F7/00 , G06F17/30
CPC分类号： G06F16/9574 , G06F16/958
摘要： A real-time Web sharing system includes a Web server, a relay server and a sharing control server. The Web server is connected with a network and stores Web contents. The relay server is connected with the network and has a storage section. When receiving an access request with an URL from one client, the relay server determines whether the access request with the URL is a first time access request to the URL. The relay server downloads the Web page of the Web contents corresponding to the URL from the Web server when it is determined that the access request is the first time access request to the URL, stores the downloaded Web page in the storage section, and delivers the Web page to the one client. Also, the relay server reads out the Web page from the storage section when it is determined that the access request is not the first time access request to the URL, rewrite the read out Web page and delivers the rewritten Web page to the one client. The sharing control server is connected with the network, and which controls synchronization of the rewritten Web page between a plurality of clients including the one client, when the rewritten Web page is browsed by the plurality of clients.
摘要翻译：实时Web共享系统包括Web服务器，中继服务器和共享控制服务器。 Web服务器与网络连接并存储Web内容。中继服务器与网络连接，并具有存储部分。当从一个客户端接收到具有URL的访问请求时，中继服务器确定具有URL的访问请求是否是对该URL的第一次访问请求。当确定访问请求是对URL的第一次访问请求时，中继服务器从Web服务器下载对应于URL的Web内容的网页，将下载的网页存储在存储部分中，并且传送网页到一个客户端。此外，当确定访问请求不是对URL的第一次访问请求时，中继服务器从存储部分读出网页，重写读出的网页并将重写的网页传递给一个客户端。所述共享控制服务器与所述网络连接，并且当所述重写的网页被所述多个客户端浏览时，所述共享控制服务器与所述网络连接，并且控制所述重写的网页在包括所述一个客户端的多个客户端之间的同步。

67. 发明授权

US06892240B1 Bidirectional communication system and method 有权
标题翻译：双向通信系统及方法
公开(公告)号：US06892240B1
公开(公告)日：2005-05-10
申请号：US09663396
申请日：2000-09-15
申请人： Kazuaki Nakajima
发明人： Kazuaki Nakajima
IPC分类号： G06F13/00 , H04L12/66 , H04L12/70 , H04L29/08 , G06F10/173
CPC分类号： H04L67/141 , H04L63/0272 , H04L63/0281 , H04L67/02 , H04L67/14 , H04L67/2876
摘要： A bidirectional communication method allowing real-time information sharing among clients on an Intranet through a server on the Internet in disclosed. After establishing two connections between the server and the client through an HTTP proxy, one of the two connections is set to a downstream connection using GET method of HTTP to allow real-time data transfer from the server to the client. Thereafter, the other of the two connections is set to an upstream connection using POST method of HTTP to allow real-time data transfer from the client to the server. After having set the upstream connection and the downstream connection, data cells are transferred between the server and the client through the upstream connection and the downstream connection.
摘要翻译：一种双向通信方法，允许通过因特网上的服务器在内联网上的客户端之间进行实时信息共享。通过HTTP代理建立服务器和客户端之间的两个连接后，两个连接中的一个将使用HTTP的GET方法设置为下游连接，以允许从服务器到客户端的实时数据传输。此后，使用HTTP的POST方法将两个连接中的另一个设置为上游连接，以允许从客户端到服务器的实时数据传输。设置上游连接和下游连接后，通过上游连接和下游连接在服务器和客户端之间传输数据信元。

68. 发明申请

US20050037580A1 Manufacturing method for semiconductor device 审中-公开
标题翻译：半导体器件的制造方法
公开(公告)号：US20050037580A1
公开(公告)日：2005-02-17
申请号：US10887921
申请日：2004-07-12
申请人： Kazuaki Nakajima , Kyoichi Suguro
发明人： Kazuaki Nakajima , Kyoichi Suguro
IPC分类号： C23C18/16 , C25D7/12 , H01L21/28 , H01L21/288 , H01L21/3205 , H01L21/8238 , H01L23/52 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78
CPC分类号： H01L21/823842 , H01L21/823857
摘要： Disclosed is a manufacturing method for a semiconductor device comprising forming a structure comprising a first gate insulating film provided in a first region, a first conducting portion provided on the first gate insulating film, a second gate insulating film provided in a second region, and a second conducting portion provided on the second gate insulating film, the first conducting portion and second conducting portion being formed of the same conducting film, a work function of a bottom of the first conducting portion being equal to a work function of a bottom of the second conducting portion, forming a third conducting portion on the second conducting portion by a plating method, and varying the work function of the bottom of the second conducting portion by diffusing a metal element contained in the third conducting portion to the second conducting portion.
摘要翻译：公开了一种半导体器件的制造方法，包括形成包括设置在第一区域中的第一栅极绝缘膜，设置在第一栅极绝缘膜上的第一导电部分，设置在第二区域中的第二栅极绝缘膜，以及第二导电部分，设置在第二栅极绝缘膜上，第一导电部分和第二导电部分由相同的导电膜形成，第一导电部分的底部的功函数等于第二导电部分的底部的功函数通过电镀方法在第二导电部分上形成第三导电部分，并且通过将包含在第三导电部分中的金属元件扩散到第二导电部分来改变第二导电部分的底部的功函数。

69. 发明授权

US06767796B2 Method of manufacturing semiconductor device and the semiconductor device 失效
公开(公告)号：US06767796B2
公开(公告)日：2004-07-27
申请号：US09973744
申请日：2001-10-11
申请人： Masayuki Tanaka , Kazuaki Nakajima , Yoshitaka Tsunashima , Takayuki Ito , Kyoichi Suguro
发明人： Masayuki Tanaka , Kazuaki Nakajima , Yoshitaka Tsunashima , Takayuki Ito , Kyoichi Suguro
IPC分类号： H01L2128
CPC分类号： H01L21/324 , H01L21/28518 , H01L21/32053 , H01L21/76843 , H01L21/76855 , H01L21/76864 , H01L21/76886 , H01L29/665
摘要： An aspect of the present invention provides a method of manufacturing a semiconductor device, including, forming an insulating film on a silicide layer formed at the surface of a silicon semiconductor substrate, etching the insulating film to form a contact hole in which the silicide layer is exposed, forming a metal nitride film on the bottom and side wall of the contact hole, carrying out a first heating process at 600° C. or lower on the substrate, carrying out, during the first heating process, a second heating process for 10 msec or shorter with light whose main wavelength is shorter than a light absorbing end of silicon, forming a contact conductor in the contact hole after the second heating process, and forming, on the insulating film, wiring that is electrically connected to the substrate through the contact conductor.

70. 发明授权

US06235627B1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06235627B1
公开(公告)日：2001-05-22
申请号：US09103374
申请日：1998-06-24
申请人： Kazuaki Nakajima
发明人： Kazuaki Nakajima
IPC分类号： H01L2144
CPC分类号： H01L21/76897 , H01L21/28052 , H01L21/28518 , H01L29/4933 , H01L29/66545 , H01L29/6656 , H01L29/6659
摘要： A semiconductor device is formed by forming a groove portion whose side surface is formed of a first insulating film and whose bottom surface is formed of a silicon film on the main surface of a semiconductor substrate, forming a metal film on the silicon film of a bottom portion of the groove portion, reacting the silicon film with the metal film by a heat treatment to selectively form a silicide film on the bottom portion of the groove portion, removing the metal film other than a portion thereof which has been converted to metal silicide after the metal silicide layer is formed, and forming a second insulating film on the metal silicide film to form one of a wiring and an electrode which is covered with the first and second insulating films.
摘要翻译：半导体器件通过在半导体衬底的主表面上形成侧面由第一绝缘膜形成并且其底表面由硅膜形成的沟槽部分形成，在底部的硅膜上形成金属膜部分，通过热处理使硅膜与金属膜反应，以在沟槽部分的底部上选择性地形成硅化物膜，除去其后被转化为金属硅化物的部分以外的金属膜。形成金属硅化物层，并在金属硅化物膜上形成第二绝缘膜，以形成被第一和第二绝缘膜覆盖的布线和电极之一。

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