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    • 62. 发明授权
    • Wafer level LED package and method of fabricating the same
    • 晶圆级LED封装及其制造方法
    • US08592232B2
    • 2013-11-26
    • US13359287
    • 2012-01-26
    • Dae Woong SuhChung Hoon Lee
    • Dae Woong SuhChung Hoon Lee
    • H01L33/44
    • H01L33/44H01L33/0095H01L33/20H01L33/22H01L33/486H01L33/50H01L33/507H01L33/56H01L33/62H01L2924/0002H01L2933/0041H01L2933/0066H01L2924/00
    • Disclosed are a wafer level LED package and a method of fabricating the same. The method of fabricating a wafer level LED package includes: forming a plurality of semiconductor stacks on a first substrate, each of the semiconductor stacks comprising a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active region disposed between the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer; preparing a second substrate comprising first lead electrodes and second lead electrodes arranged corresponding to the plurality of semiconductor stacks; bonding the plurality of semiconductor stacks to the second substrate; and cutting the first substrate and the second substrate into a plurality of packages after the bonding is completed. Accordingly, the wafer level LED package is provided.
    • 公开了晶圆级LED封装及其制造方法。 制造晶片级LED封装的方法包括:在第一衬底上形成多个半导体堆叠,每个半导体堆叠包括第一导电型半导体层,第二导电型半导体层和有源区 设置在第一导电型半导体层和第二导电型半导体层之间; 制备第二衬底,其包括对应于所述多个半导体堆叠布置的第一引线电极和第二引线电极; 将所述多个半导体堆叠接合到所述第二基板; 以及在所述接合完成之后将所述第一基板和所述第二基板切割成多个封装。 因此,提供了晶片级LED封装。