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61. 发明申请

US20050139944A1 Optical navigation chip 有权
标题翻译：光导航芯片
公开(公告)号：US20050139944A1
公开(公告)日：2005-06-30
申请号：US10858970
申请日：2004-06-02
申请人： Chun-Huang Lin , Jeng-Feng Lan , Chien-Chang Huang
发明人： Chun-Huang Lin , Jeng-Feng Lan , Chien-Chang Huang
IPC分类号： H01L31/0232
CPC分类号： G06F3/0317 , G06F3/03543
摘要： An optical navigation chip. The optical navigation chip is appropriate for an optical pointing device and used for calculating a displacement of the optical navigation chip relative to an operating surface. The optical navigation chip comprises a photo sensor array driven by a photo sensor control circuit for detecting an image of the operating surface, a signal readout circuit coupled with the photo sensor array for reading out the image in analog format, an analog-to-digital conversion (ADC) circuit coupled with the signal readout circuit for converting the image from analog format to digital format, an image qualification circuit coupled with the ADC circuit for determining quality of the image and outputting a quality index accordingly, and a motion detection circuit for outputting the displacement according to the quality index.
摘要翻译：光导航芯片。光学导航芯片适用于光学指向装置并用于计算光学导航芯片相对于操作表面的位移。光学导航芯片包括由用于检测操作表面的图像的光传感器控制电路驱动的光传感器阵列，与用于以模拟格式读出图像的光传感器阵列耦合的信号读出电路，模数转换器与用于将图像从模拟格式转换为数字格式的信号读出电路耦合的转换（ADC）电路，与ADC电路耦合的图像鉴定电路，用于确定图像的质量并相应地输出质量指标;以及运动检测电路，根据质量指标输出位移。

62. 发明授权

US06838296B2 Device and method for detecting alignment of deep trench capacitors and active areas in DRAM devices 有权
标题翻译：用于检测DRAM器件中深沟槽电容器和有源区域的对准的装置和方法
公开(公告)号：US06838296B2
公开(公告)日：2005-01-04
申请号：US10448920
申请日：2003-05-29
申请人： Tie-Jiang Wu , Chien-Chang Huang , Bo-Ching Jiang , Yu-Wei Ting
发明人： Tie-Jiang Wu , Chien-Chang Huang , Bo-Ching Jiang , Yu-Wei Ting
IPC分类号： H01L21/8242 , H01L23/544 , H01L27/02 , H01L21/66
CPC分类号： H01L27/10861 , G11C11/401 , G11C2029/5002 , H01L22/34 , H01L27/0207 , H01L27/10867 , H01L27/1087
摘要： A test device and method for detecting alignment of deep trench capacitors and active areas in DRAM devices. A quadrilateral active area is disposed in the scribe line region, with four equilaterals and four vertex angles. Parallel first and second deep trench capacitors are disposed in the quadrilateral active area. The first deep trench capacitor has a first surface aligned with a second surface of the second deep trench capacitor. The first and second vertex angles of the four vertex angles have a diagonal line essentially perpendicular to the first and second surfaces. The first and second vertex angles are a predetermined distance from the first surface and the second surface respectively.
摘要翻译：用于检测DRAM器件中深沟槽电容器和有源区域的对准的测试装置和方法。四边形有源区域设置在划线区域，具有四个平衡和四个顶角。平行的第一和第二深沟槽电容器设置在四边形有源区域中。第一深沟槽电容器具有与第二深沟槽电容器的第二表面对准的第一表面。四个顶角的第一和第二顶角具有基本上垂直于第一和第二表面的对角线。第一和第二顶角分别与第一表面和第二表面预定的距离。

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