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61. 发明申请

US20080001181A1 Complementarily doped metal-semiconductor interfaces to reduce dark current in MSM photodetectors 审中-公开
标题翻译：互补掺杂的金属 - 半导体界面，以减少MSM光电探测器中的暗电流
公开(公告)号：US20080001181A1
公开(公告)日：2008-01-03
申请号：US11477722
申请日：2006-06-28
申请人： Titash Rakshit , Miriam Reshotko
发明人： Titash Rakshit , Miriam Reshotko
IPC分类号： H01L27/148
CPC分类号： H01L31/1085 , H01L31/18
摘要： Metal-Semiconductor-Metal (“MSM”) photodetectors and methods to fabricate thereof are described. The MSM photodetector includes a thin heavily doped (“delta doped”) regions deposited at an interface between metal contacts and a semiconductor layer to reduce a dark current of the MSM photodetector. Band engineering at the metal-semiconductor interfaces using complementarily delta doped semiconductor regions to fix two different interface workfunctions. Delta doping the grounded contact interface with p+ and the reverse biased interface with n+ enhances the Schottky barrier faced by both electrons and holes at the point of injection from source contact into the channel and at the point of collection from the channel into the drain contact.
摘要翻译：描述了金属 - 半导体 - 金属（“MSM”）光电探测器及其制造方法。 MSM光电检测器包括沉积在金属触点和半导体层之间的界面处的薄重掺杂（“δ掺杂”）区域，以减少MSM光电探测器的暗电流。使用互补的δ掺杂半导体区域在金属 - 半导体界面处的带工程化以固定两个不同的界面工作功能。使用p +掺杂接地接触界面的增益和具有n +的反向偏置界面的增强了在源极接触到通道中以及从通道到漏极接触点的注入点处的电子和空穴所面临的肖特基势垒的肖特基势垒。

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