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61. 发明授权

US06242359B1 Plasma cleaning and etching methods using non-global-warming compounds 有权
标题翻译：使用非全球变暖化合物的等离子体清洗和蚀刻方法
公开(公告)号：US06242359B1
公开(公告)日：2001-06-05
申请号：US09137418
申请日：1998-08-20
申请人： Ashutosh Misra
发明人： Ashutosh Misra
IPC分类号： H01L213065
CPC分类号： C23C16/4405 , H01L21/31116 , H01L21/32136
摘要： Provided is a novel method of cleaning a chemical vapor deposition processing chamber having deposits on an inner surface thereof is provided. The process involves forming a plasma from one or more gases comprising a fluorine-containing but otherwise halogen-free non-global-warming compound, and contacting active species generated in the plasma with the inner surface of the chamber, with the proviso that the non-global-warming compound is not trifluoroacetic anhydride. Also provided is a method of etching a layer on a silicon wafer. The method involves the steps of: (a) introducing a silicon wafer into a processing chamber, the silicon wafer comprising a layer to be etched; and (b) forming a plasma from one or more gases comprising a fluorine-containing but otherwise halogen-free non-global-warming compound. Active species generated in the plasma are contacted with the silicon wafer, thereby etching the layer, with the proviso that the non-global-warming compound is not trifluoroacetic anhydride. The chemistries in accordance with the invention provide environmentally benign alternatives to the conventionally used global-warming chemistries for chamber cleaning and semiconductor etching processes.
摘要翻译：提供了一种清洗在其内表面上具有沉积物的化学气相沉积处理室的新方法。该方法包括从包含含氟但不含卤素的非全球变暖化合物的一种或多种气体形成等离子体，并使等离子体中产生的活性物质与室的内表面接触，条件是非 - 全球变暖的化合物不是三氟乙酸酐。还提供了蚀刻硅晶片上的层的方法。该方法包括以下步骤：（a）将硅晶片引入处理室，所述硅晶片包括待蚀刻的层; 和（b）从包含含氟但不含卤素的非全球变暖化合物的一种或多种气体形成等离子体。在等离子体中产生的活性物质与硅晶片接触，从而蚀刻该层，条件是非全球变暖化合物不是三氟乙酸酐。根据本发明的化学品为用于室清洁和半导体蚀刻工艺的常规使用的全球变暖化学品提供环境友好的替代物。

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