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61. 发明授权

US06657835B2 ESD protection circuit for mixed-voltage I/O by using stacked NMOS transistors with substrate triggering technique 有权
公开(公告)号：US06657835B2
公开(公告)日：2003-12-02
申请号：US09874996
申请日：2001-06-07
申请人： Ming-Dou Ker , Chien-Hui Chuang , Wen-Yu Lo
发明人： Ming-Dou Ker , Chien-Hui Chuang , Wen-Yu Lo
IPC分类号： H02H900
CPC分类号： H01L27/0266 , H01L2924/0002 , H01L2924/00
摘要： An ESD protection circuit for Mixed-Voltage I/O by using stacked NMOS transistors with substrate triggering technique is disclosed. The ESD protection circuit contains a set of stacked NMOS transistors with a first NMOS transistor and a second NMOS transistor, a parasitic lateral bipolar transistor, a substrate current generating circuit, and a parasitic substrate resistor. The drain of the first NMOS transistor connects to an I/O pad. The gate of the first NMOS transistor connects to a first working voltage. The source of the first NMOS transistor connects to the drain of the second NMOS transistor. The gate of the second NMOS transistor connects to an internal circuit. The source of the second NMOS transistor connects to a second working voltage. The collector of the parasitic lateral bipolar transistor connects to the drain of the first NMOS transistor and its emitter connects to the source of the second NMOS transistor. A first terminal of the substrate current generating circuit connects to the I/O pad, a second terminal connects to the second working voltage, and a third terminal connects to the substrate of the lateral bipolar transistor, so that a triggering current is sent out of the third terminal when the voltage at the I/O pad is over a predetermined value. One end of the parasitic substrate resistor connects to the base of the bipolar transistor and the other end connects to the second working voltage, using the triggering current to generate a bias for the bipolar transistor. During ESD-stress condition, such ESD protection circuit can be quickly triggered on to discharge ESD current. During IC normal circuit operating condition, such ESD protection circuit is kept off.

62. 发明授权

US06444551B1 N-type buried layer drive-in recipe to reduce pits over buried antimony layer 有权
标题翻译： N型掩埋层驱动配方，减少埋在锑层上的坑
公开(公告)号：US06444551B1
公开(公告)日：2002-09-03
申请号：US09910202
申请日：2001-07-23
申请人： Wen-Yu Ku , Fang-Cheng Lu , Ting-Pang Li , Cheng-Chung Wang
发明人： Wen-Yu Ku , Fang-Cheng Lu , Ting-Pang Li , Cheng-Chung Wang
IPC分类号： H01L21425
CPC分类号： H01L21/2253 , H01L21/74
摘要： A method of driving-in antimony into a wafer, including the following steps. A wafer is loaded into an annealing furnace/tool. The wafer having an area of implanted antimony ions. The wafer is annealed a first time at a first temperature in the presence of only a first nitrogen gas flow rate. The wafer is ramped-down from the first temperature to a second temperature in the presence of only an oxygen gas flow rate. The wafer is maintained in the presence of the of oxygen gas flow rate at the second temperature. The wafer is ramped-up from the second temperature to a third temperature in the presence of only the oxygen gas flow rate. The wafer is annealed a second time at the third temperature in the presence of only a second nitrogen gas flow rate to drive-in the antimony ions within the area of implanted antimony.
摘要翻译：一种将锑引入晶片的方法，包括以下步骤。将晶片装载到退火炉/工具中。该晶片具有注入的锑离子的面积。在仅有第一氮气流量存在的情况下，在第一温度下第一次对晶片进行退火。在只有氧气流量存在的情况下，晶片从第一温度下降到第二温度。在第二温度下，在存在氧气流速的情况下保持晶片。在仅存在氧气流速的情况下，晶片从第二温度升高到第三温度。在仅第二氮气流速存在的情况下，在第三温度下第二次退火晶片，以驱动在注入锑的区域内的锑离子。

63. 发明授权

US06228753B1 Method of fabricating a bonding pad structure for improving the bonding pad surface quality 有权
标题翻译：制造用于改善焊盘表面质量的焊盘结构的方法
公开(公告)号：US06228753B1
公开(公告)日：2001-05-08
申请号：US09336044
申请日：1999-06-18
申请人： Yung-Tsun Lo , Wen-Yu Ho , Sung-Chun Hsieh
发明人： Yung-Tsun Lo , Wen-Yu Ho , Sung-Chun Hsieh
IPC分类号： H01L2144
CPC分类号： H01L24/11 , H01L2224/1147 , H01L2224/13099 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01082 , H01L2924/14 , H01L2924/351 , H01L2924/00
摘要： A method of fabricating bonding pad structure for improving bonding pad surface quality. A substrate has a bonding pad thereon. A passivation is formed on the bonding pad to expose the bonding pad. A sacrificial layer is formed on the passivation and an opening is formed within the sacrificial layer to expose the bonding pad. A Cu/Al alloy is formed on the passivation to at least cover the bonding pad. The sacrificial layer and the Cu/Al alloy thereon are removed, such that the Cu/Al alloy remains on the bonding pad.
摘要翻译：一种制造焊盘结构以提高焊盘表面质量的方法。衬底上具有焊盘。在焊盘上形成钝化以露出焊盘。在钝化层上形成牺牲层，在牺牲层内形成一个开口以露出焊盘。在钝化层上形成Cu / Al合金，至少覆盖焊盘。去除牺牲层和其上的Cu / Al合金，使得Cu / Al合金保留在接合焊盘上。

64. 发明授权

US6022800A Method of forming barrier layer for tungsten plugs in interlayer dielectrics 失效
标题翻译：在层间电介质中形成钨塞的阻挡层的方法
公开(公告)号：US6022800A
公开(公告)日：2000-02-08
申请号：US69711
申请日：1998-04-29
申请人： Wen-Yu Ho , Sen-Nan Lee , Sung Chun Hsieh , Hui-Lun Chen
发明人： Wen-Yu Ho , Sen-Nan Lee , Sung Chun Hsieh , Hui-Lun Chen
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/76844 , H01L21/76843
摘要： A method of reducing tungsten plug loss in processes for fabrication for silicon-based semiconductor devices that include a tungsten plug in a high aspect ratio contact hole. The invention provides a barrier layer prepared by first forming a conformal layer of titanium nitride by chemical vapor deposition. Afterward, another film of titanium nitride is supplied by plasma vapor deposition. The barrier layer comprises at least these two films, and tungsten is then deposited to at least fill the high aspect ratio film-coated contact hole. Upon removal of excess tungsten as by wet etch back, the tungsten plug remains essentially intact, and any plug loss is insignificant in comparison with the prior art.
摘要翻译：一种在包括高长宽比接触孔中的钨插件的硅基半导体器件的制造工艺中降低钨插塞损耗的方法。本发明提供了通过化学气相沉积首先形成氮化钛保形层而制备的阻挡层。之后，通过等离子体气相沉积提供另一氮化钛膜。阻挡层至少包括这两个膜，然后沉积钨至少填充高纵横比的薄膜接触孔。在通过湿式回蚀去除多余的钨之后，钨塞基本上保持完整，并且与现有技术相比，任何塞子损失是不显着的。

65. 发明授权

US5860589A Packing box 失效
标题翻译：包装盒
公开(公告)号：US5860589A
公开(公告)日：1999-01-19
申请号：US736667
申请日：1996-10-25
申请人： Wen Yu Hsu
发明人： Wen Yu Hsu
IPC分类号： B65D5/42
CPC分类号： B65D5/4237 , B65D5/4204 , Y10S229/921
摘要： A packing box made from a patterned cardboard having a bottom panel, a top panel, two side panels, a front panel, and a rear panel, wherein a rectangular bottom frame is extended from one long side of the bottom panel remote from the front panel, having two adhesion flaps respectively extended from one long side and one short side thereof and adhered to the bottom panel at an outer side, defining with the bottom panel a bottom window and an insertion hole at one side for the insertion of a card into the bottom window; a rectangular top frame is extended from one long side of one side panel remote from the bottom panel, having two adhesion flaps respectively extended from one long side and one short side thereof and adhered to the top panel at an outer side, defining with the top panel a top window and an insertion hole at one side for the insertion of a card into the top window.
摘要翻译：由具有底板，顶板，两个侧板，前面板和后面板的图案化纸板制成的包装盒，其中矩形底框架从底板的远离前面板的一个长边延伸具有分别从一个长边和一个短边延伸的两个粘合翼片，并且在外侧粘附到底板，其中底板限定了底部窗口和一侧的插入孔以将卡插入到底窗; 矩形顶框架从一个侧面板的远离底板的一个长边延伸，具有分别从一个长边和一个短边延伸的两个粘合片，并在外侧粘附到顶板，一个顶部窗口和一侧的插入孔，用于将卡插入顶部窗口。

66. 发明授权

US5425108A Mobile type of automatic identification system for a car plate 失效
标题翻译：移动式汽车板自动识别系统
公开(公告)号：US5425108A
公开(公告)日：1995-06-13
申请号：US124445
申请日：1993-09-22
申请人： Chung-Mu Hwang , Wen-Yu Chen , Shyh-Yeong Shu
发明人： Chung-Mu Hwang , Wen-Yu Chen , Shyh-Yeong Shu
IPC分类号： G06K7/14 , G06K9/34 , G06K9/00
CPC分类号： G06K7/1482 , G06K7/14 , G06K9/34 , G06K2209/01
摘要： An automatic identification system for a car-plate which comprises a photographing apparatus and an image-processing CPU. The system disclosed in the present invention can be mounted in a car for automatically identifying a car-plate that is under a still or moving condition. The photographing apparatus is used for taking the image of a car-plate, and the image is then transmitted into the image-processing CPU, which accurately extracts the characters of a car-plate using a "Fuzzy inference" technique, and identifies the characters through a character structure analysis neural network. With the automatic identification system of the present invention, an incorrect identification can be avoided in the event the image of a car-plate is blurred, and the characters is deformed or smeared.
摘要翻译：一种用于车板的自动识别系统，包括摄影装置和图像处理CPU。本发明公开的系统可以安装在汽车中，用于自动识别处于静止或移动状态的轿厢板。拍摄装置用于拍摄汽车板的图像，然后将图像发送到图像处理CPU中，图像处理CPU使用“模糊推理”技术精确地提取汽车板的字符，并且识别字符通过字符结构分析神经网络。利用本发明的自动识别系统，在汽车板的图像模糊，字符变形或模糊的情况下，可以避免错误的识别。

67. 发明申请

US20210025654A1 DIRECT CURRENT SMELTING ELECTRIC FURNACE 有权
公开(公告)号：US20210025654A1
公开(公告)日：2021-01-28
申请号：US16968622
申请日：2019-02-01
申请人： Wen YU
发明人： Wen YU
IPC分类号： F27D11/08 , G01R31/42 , F27D3/18
摘要： A direct current smelting electric furnace includes a rectifying control circuit, a rectifying power supply device, a short network device, a multi-load layout device including multiple electrodes, and an electric furnace body. The rectifying power supply device includes at least two double-circuit direct current power supply packs. Four output terminals of each double-circuit direct current power supply pack are connected to three electrodes in the multi-load layout device by the short network device to constitute two current circuits by an electric furnace weld pool load. Each electrode in the multi-load layout device is connected to homo-polar output terminals of a three-phase negative semi-cycle rectifying output circuit and a three-phase positive semi-cycle rectifying output circuit, separately. The rectifying power supply device-includes multiple output current circuits. The number of output current circuits of the rectifying power supply device is the same as the number of electrodes in the multi-load layout device.

68. 发明申请

US20160151235A1 MASSAGE DEVICE 审中-公开
标题翻译：按摩装置
公开(公告)号：US20160151235A1
公开(公告)日：2016-06-02
申请号：US14952843
申请日：2015-11-25
申请人： HSIEN-WEN YU , CHENG-HUAN YANG
发明人： HSIEN-WEN YU , CHENG-HUAN YANG , PIN-SI LIN
IPC分类号： A61H15/00
CPC分类号： A61H15/0092 , A61H7/001 , A61H7/007 , A61H2015/0035 , A61H2201/0119 , A61H2201/0157 , A61H2201/0161 , A61H2201/0192 , A61H2201/1253 , A61H2201/1284 , A61H2205/062 , A61H2205/081
摘要： A massage device includes a shaft and a detachable massage member. The shaft has a first end provided with a connector for releasably connecting the shaft to a swivel joint. The detachable massage member is detachably connected at a proximal end to an opposite second end of the shaft. With the above arrangements, the massage device can be conveniently operated directly by a user to achieve the effect of deep massage of a variety of muscles.
摘要翻译：按摩装置包括轴和可拆卸按摩部件。轴具有设置有用于将轴可释放地连接到旋转接头的连接器的第一端。可拆卸的按摩构件在近端可拆卸地连接到轴的相对的第二端。利用上述布置，按摩装置可以由用户直接方便地操作，以达到各种肌肉的深层按摩效果。

69. 发明授权

US08753904B2 Method and system for semiconductor device pattern loading effect characterization 有权
标题翻译：半导体器件图案加载效应表征的方法和系统
公开(公告)号：US08753904B2
公开(公告)日：2014-06-17
申请号：US13491252
申请日：2012-06-07
申请人： Chun Hsiung Tsai , Sheng-Wen Yu , De-Wei Yu
发明人： Chun Hsiung Tsai , Sheng-Wen Yu , De-Wei Yu
IPC分类号： H01L21/00
CPC分类号： G01B11/14 , G01N21/55 , H01L21/324 , H01L22/12 , H01L22/20
摘要： The present disclosure provides a method and system for characterizing a pattern loading effect. A method may include performing a reflectivity measurement on a semiconductor wafer and determining an anneal process technique based on the reflectivity measurement. The determining the anneal process technique may include determining a spatial distance for a reflectivity change using a reflectivity map generated using the reflectivity measurement. This spatial distance is compared with the thermal diffusion length associated with each of the plurality of anneal process techniques. In an embodiment, a thermal profile map and/or a device performance map may be provided.
摘要翻译：本公开提供了用于表征模式加载效应的方法和系统。一种方法可以包括在半导体晶片上执行反射率测量并且基于反射率测量确定退火处理技术。确定退火处理技术可以包括使用使用反射率测量生成的反射率图来确定反射率变化的空间距离。将该空间距离与与多个退火处理技术中的每一个相关联的热扩散长度进行比较。在一个实施例中，可以提供热分布图和/或设备性能图。

70. 发明授权

US08741679B2 Surface treatment method by using the NH3 plasma treatment to modify the sensing thin-film 有权
标题翻译：表面处理方法采用NH3等离子体处理改性传感薄膜
公开(公告)号：US08741679B2
公开(公告)日：2014-06-03
申请号：US13466291
申请日：2012-05-08
申请人： Chao-Sung Lai , Jau-Song Yu , Yu-Sun Chang , Po-Lung Yang , Tseng-Fu Lu , Yi-Ting Lin , Wen-Yu Chuang , Ting-Chun Yu , I-Shun Wang , Jyh-Ping Chen , Chou Chien
发明人： Chao-Sung Lai , Jau-Song Yu , Yu-Sun Chang , Po-Lung Yang , Tseng-Fu Lu , Yi-Ting Lin , Wen-Yu Chuang , Ting-Chun Yu , I-Shun Wang , Jyh-Ping Chen , Chou Chien
IPC分类号： H01L21/336 , H01L21/31 , G01N27/414 , C12Q1/00 , A61B5/00
CPC分类号： A61B5/1486 , A61B5/14532 , A61B5/14546 , A61B2562/12 , C23C16/405 , C23C16/45527 , C23C16/56
摘要： The NH3 plasma treatment by remote plasma is firstly proposed to replace the covalent bonding process during surface modification procedure that for amine bond generation.
摘要翻译：首先提出了通过远程等离子体处理的NH3等离子体处理，以代替用于胺键生成的表面改性过程中的共价键合过程。

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