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61. 发明授权

US06388270B1 Semiconductor device and process for producing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06388270B1
公开(公告)日：2002-05-14
申请号：US09275930
申请日：1999-03-24
申请人： Shunpei Yamazaki , Toru Mitsuki
发明人： Shunpei Yamazaki , Toru Mitsuki
IPC分类号： H01L2904
CPC分类号： H01L29/045 , G02F1/13454 , H01L27/1251 , H01L27/1277 , H01L29/66765 , H01L29/78609 , H01L29/78684
摘要： To provide a semiconductor device utilizing a semiconductor film having a high crystallinity by a production process having a high mass productivity. Upon crystallizing an amorphous silicon film 106, germanium is used as a catalyst element for accelerating the crystallization. A heat treatment is conducted in a condition in that a germanium film 107 is formed on the amorphous silicon film 106, and thus a polysilicon film 108 is obtained by the catalytic function of germanium. The polysilicon film 108 thus obtained has crystallinity that can be substantially regarded as a single crystal.
摘要翻译：通过具有高质量生产率的制造方法提供利用具有高结晶度的半导体膜的半导体器件。在结晶非晶硅膜106时，使用锗作为促进结晶的催化剂元素。在非晶硅膜106上形成锗膜107的条件下进行热处理，由此通过锗的催化功能获得多晶硅膜108。由此获得的多晶硅膜108具有基本上被认为是单晶的结晶度。

62. 发明授权

US06294815B1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06294815B1
公开(公告)日：2001-09-25
申请号：US09553488
申请日：2000-04-20
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Toru Mitsuki , Hisashi Ohtani
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Toru Mitsuki , Hisashi Ohtani
IPC分类号： H01L2701
CPC分类号： H01L29/78675 , G02F1/13454 , H01L27/12 , H01L27/1248 , H01L27/1277 , H01L29/66757 , H01L29/78603
摘要： A semiconductor device comprising a substrate having an insulating surface layer and an active layer comprising a semiconductor thin film formed thereon, wherein the substrate and the insulating surface layer in contact with the substrate each has at least one concave part, and the influence of the concave part is removed by conducting a flattening treatment and heat treatment of the undercoat film of the semiconductor thin film.
摘要翻译：一种半导体器件，包括具有绝缘表面层的衬底和在其上形成的半导体薄膜的有源层，其中所述衬底和与所述衬底接触的绝缘表面层各自具有至少一个凹部，并且所述凹部通过对半导体薄膜的底涂层进行扁平化处理和热处理来除去部分。

63. 发明授权

US5966596A Method of fabricating semiconductor devices by crystallizing amorphous silicon with nickel 失效
标题翻译：通过用镍结晶非晶硅制造半导体器件的方法
公开(公告)号：US5966596A
公开(公告)日：1999-10-12
申请号：US757112
申请日：1996-12-02
申请人： Hisashi Ohtani , Toru Mitsuki
发明人： Hisashi Ohtani , Toru Mitsuki
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/20 , H01L21/336 , H01L29/786 , H01L29/04
CPC分类号： H01L29/66757 , H01L21/2022
摘要： Method of fabricating TFTs (thin-film transistors) having a crystallized silicon film and a gate-insulating film. First, an amorphous silicon film is formed on an insulating substrate. A first dielectric film is formed from silicon oxide on the amorphous silicon film. Holes are formed in the first dielectric film to selectively expose the surface of the amorphous silicon film. Nickel is introduced as the metal element into the amorphous silicon film. The film is heat-treated, thus forming crystallized silicon film. This crystalline silicon film is etched together with the silicon oxide film to form an active layer. The etched silicon oxide film acts as the aforementioned gate-insulating film. Even after the crystallization step, the silicon oxide film is left behind. As a result, the interface with the crystalline silicon film is kept in a good state.
摘要翻译：制造具有结晶硅膜和栅极绝缘膜的TFT（薄膜晶体管）的方法。首先，在绝缘基板上形成非晶硅膜。第一电介质膜由非晶硅膜上的氧化硅形成。在第一电介质膜中形成孔以选择性地暴露非晶硅膜的表面。将镍作为金属元素引入到非晶硅膜中。对该膜进行热处理，从而形成结晶硅膜。将该晶体硅膜与氧化硅膜一起蚀刻以形成活性层。蚀刻的氧化硅膜用作上述栅极绝缘膜。即使在结晶步骤之后，留下氧化硅膜。结果，与晶体硅膜的界面保持在良好的状态。

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