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61. 发明申请

US20090035516A1 Organometallic precursor, thin film having the same, metal wiring including the thin film, method of forming a thin film and method of manufacturing a metal wiring using the same 有权
标题翻译：有机金属前体，具有该薄膜的薄膜，包含该薄膜的金属布线，形成薄膜的方法及使用其制造金属布线的方法
公开(公告)号：US20090035516A1
公开(公告)日：2009-02-05
申请号：US12219983
申请日：2008-07-31
申请人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
发明人： Youn-Joung Cho , Jung-Ho Lee , Jun-Hyun Cho , Seung-Min Ryu , Kyoo-Chul Cho , Jung-Sik Choi
IPC分类号： B32B3/24 , C01B35/14 , B05D3/00 , C23C16/455 , C23C16/00 , B05D3/02 , B05D5/12
CPC分类号： C23C16/18 , C07F5/00 , C07F5/069 , C23C16/20 , Y10T428/24331
摘要： Disclosed are an organometallic precursor that may be used in manufacturing a semiconductor device, a thin film having the same, a metal wiring including the thin film, a method of forming a thin film and a method of manufacturing a metal wiring. An organometallic precursor including a central metal, a borohydride ligand and an amine ligand for reducing a polarity of the organometallic precursor may be provided onto a substrate, and may be thermally decomposed to form a thin film on the substrate. The organometallic precursor having a reduced polarity may be provided to a chamber with a constant flow rate, and thus stability and/or efficiency of a semiconductor manufacturing process may be improved.
摘要翻译：公开了可用于制造半导体器件的有机金属前体，具有该有机金属前体的薄膜，包括该薄膜的金属布线，薄膜形成方法以及金属布线的制造方法。包括用于降低有机金属前体极性的中心金属，硼氢化物配体和胺配体的有机金属前驱体可以提供到基底上，并且可以被热分解以在基底上形成薄膜。具有降低的极性的有机金属前体可以以恒定的流速提供给室，因此可以提高半导体制造工艺的稳定性和/或效率。

62. 发明申请

US20090001459A1 High power semiconductor device capable of preventing parasitical bipolar transistor from turning on 审中-公开
标题翻译：能够防止寄生双极晶体管导通的大功率半导体器件
公开(公告)号：US20090001459A1
公开(公告)日：2009-01-01
申请号：US11878896
申请日：2007-07-27
申请人： Kwang-Yeon Jun , Tea-Sun Lee , Jung-Ho Lee , Jong-Min Kim , Joon-Hyun Kim
发明人： Kwang-Yeon Jun , Tea-Sun Lee , Jung-Ho Lee , Jong-Min Kim , Joon-Hyun Kim
IPC分类号： H01L29/78
CPC分类号： H01L29/0696 , H01L29/1095 , H01L29/7811
摘要： A high power semiconductor device capable of preventing parasitical bipolar transistor from turning on comprises a first conduction type drain region, a first conduction type epitaxial region formed on the first conduction type drain region, a plurality of second conduction type body regions formed on the surface of the epitaxial region, at least a first conduction type source region formed on the surface of the body regions, a source electrode contact region formed on the surface of the body regions and overlapping the source region and having at least one end longer than one end of the source region, and a plurality of gate electrodes staggered with the source electrode contact region and formed on the body regions and the epitaxial region.
摘要翻译：能够防止寄生双极晶体管导通的高功率半导体器件包括第一导电类型漏极区域，形成在第一导电类型漏极区域上的第一导电类型外延区域，形成在第一导电类型漏极区域的表面上的多个第二导电型体区域所述外延区域，形成在所述主体区域的表面上的至少第一导电型源极区域，形成在所述主体区域的表面上并且与所述源极区域重叠并且具有比所述主体区域的一端长的至少一个端部的源电极接触区域源极区域和与源极电极接触区域交错并形成在体区域和外延区域上的多个栅极电极。

63. 发明授权

US07463445B2 Method of controlling track seek in HDD and a recording medium therefor 失效
标题翻译：控制HDD中的追踪的方法及其记录介质
公开(公告)号：US07463445B2
公开(公告)日：2008-12-09
申请号：US11324488
申请日：2006-01-04
申请人： Jung-ho Lee
发明人： Jung-ho Lee
IPC分类号： G11B5/55
CPC分类号： G11B5/5547
摘要： Provided is a hard disc drive controlling method, and more particularly, a method of controlling track seek in a hard disc drive (HDD) provided against a shift between discs, and a computer readable recording medium having embodied thereon a computer program for the method. The method of controlling track seek in a HDD, including disc switching, includes: head switching to a head corresponding to a disc having a target track; calculating track seek length by comparing the previous target track address and the current target track address; determining whether or not the track seek length is shorter than the limit seek length set by considering a shift of a disc; if the track seek length is shorter than the limit seek length, reading the track address of a track on which the head is put on the switched disc, and by referring to the read track address and the target track address, determining track seek length and a seek profile thereof; and performing track seek according to the determined seek profile. According to the track seek control method of the invention, even when there is a shift between discs, the shift is automatically reflected and compensated for when track seek is performed, such that stable track seek can be performed.
摘要翻译：提供了一种硬盘驱动器控制方法，更具体地，涉及一种控制在盘之间的移位中提供的硬盘驱动器（HDD）中的追踪查找的方法，以及在其上实施了用于该方法的计算机程序的计算机可读记录介质。控制包括盘切换在内的HDD中的追踪查找的方法包括：头切换到与具有目标轨道的盘对应的头; 通过比较先前的目标轨道地址和当前目标轨道地址来计算轨道寻道长度; 确定轨道寻道长度是否短于通过考虑盘的移位而设定的限制寻道长度; 如果磁道寻道长度小于极限寻道长度，则读取磁头放置在切换磁盘上的磁道的磁道地址，并通过参考读磁道地址和目标磁道地址，确定磁道寻道长度和寻求资料; 以及根据所确定的寻道简档来执行追踪。根据本发明的轨迹搜索控制方法，即使在盘之间存在偏移的情况下，当执行轨道搜索时，偏移被自动反映和补偿，使得可以执行稳定的追踪。

64. 发明申请

US20080292783A1 METHOD OF MANUFACTURING A THIN LAYER AND METHODS OF MANUFACTURING GATE STRUCTURES AND CAPACITORS USING THE SAME 审中-公开
标题翻译：使用该薄膜制造薄膜结构和电容器的方法及其制造方法
公开(公告)号：US20080292783A1
公开(公告)日：2008-11-27
申请号：US12102724
申请日：2008-04-14
申请人： Jun-Hyun CHO , Jung-Ho LEE , Youn-Joung CHO , Jung-Sik CHOI , Seung-Min RYU
发明人： Jun-Hyun CHO , Jung-Ho LEE , Youn-Joung CHO , Jung-Sik CHOI , Seung-Min RYU
IPC分类号： B05D5/12 , B05D3/04
CPC分类号： C23C16/405 , C23C16/45553 , H01L21/02181 , H01L21/02189 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/31641 , H01L21/31645 , H01L27/10817 , H01L27/10852 , H01L28/40 , H01L29/517
摘要： In a method of manufacturing a thin layer, an organic metal precursor is provided onto a substrate. The organic metal precursor has a vapor pressure of about 0.5 Torr to about 6 Torr at a temperature of about 65° C. to about 95° C. and is represented by following Chemical Formula 1. An oxidant including an oxygen atom is provided onto the substrate to oxidize the organic metal precursor. The organic metal precursor reacts with the oxidant to form a thin layer including a metal oxide on the substrate. The thin layer may be used for a gate insulation layer of a gate structure, a dielectric layer of a capacitor, etc. A-MO—R]3
摘要翻译：在制造薄层的方法中，将有机金属前体提供到基底上。有机金属前体在约65℃至约95℃的温度下具有约0.5托至约6托的蒸汽压，并由以下化学式1表示。将包含氧原子的氧化剂提供到底物以氧化有机金属前体。有机金属前体与氧化剂反应以在衬底上形成包含金属氧化物的薄层。薄层可用于栅极结构的栅极绝缘层，电容器的电介质层等。<？in-line-formula description =“在线公式”end =“lead”？> AMURNOR ] 3 <化学式1> <？in-line-formula description =“In-line Formulas”end =“tail”？>

65. 发明授权

US07452569B2 Organic aluminum precursor and method of manufacturing a metal wiring using the same 失效
标题翻译：有机铝前体及其制造方法
公开(公告)号：US07452569B2
公开(公告)日：2008-11-18
申请号：US11524295
申请日：2006-09-21
申请人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
发明人： Jung-Ho Lee , Jung-Sik Choi , Jun-Hyun Cho , Youn-Joung Cho , Tae-Sung Kim , Mi-Ae Kim , Kyoo-Chul Cho
IPC分类号： C23C16/00 , C23C16/06 , B05D7/22 , H05H1/24
CPC分类号： C07F5/066 , C07F5/062 , C23C16/20
摘要： In a method of manufacturing a metal wiring, an organic aluminum precursor that includes aluminum as a central metal is applied to a substrate. The organic aluminum precursor applied to the substrate is thermally decomposed to form aluminum. The aluminum is deposited on the substrate to form an aluminum wiring having a low resistance. The organic aluminum precursor includes a chemical structure in accordance with one of the chemical formulae: wherein R1, R2, R3, R4 and R5 are independently H or a C1-C5 alkyl functional group, n is an integer of 1 to 5, x is 1 or 2, and y is 0 or 1, or wherein R1, R2, R3, R4 R5, R6, R7 and R8 are independently H or a C1-C5 alkyl functional group, and Y is boron.
摘要翻译：在制造金属布线的方法中，将包含铝作为中心金属的有机铝前体施加到基板上。施加到基材上的有机铝前体热分解形成铝。铝沉积在基板上以形成具有低电阻的铝布线。有机铝前体包括根据以下化学式之一的化学结构：其中R 1，R 2，R 3，R 3， R 4和R 5独立地是H或C 1 -C 5烷基官能团，n是整数 1至5，x为1或2，y为0或1，或其中R 1，R 2，R 3，R R 5，R 6，R 7和R 8独立地是H 或C 1 -C 5烷基官能团，Y是硼。

66. 发明授权

US07325332B2 Clothing dryer 失效
标题翻译：衣物烘干机
公开(公告)号：US07325332B2
公开(公告)日：2008-02-05
申请号：US11209671
申请日：2005-08-24
申请人： Young Suk Chung , Jung Ho Lee
发明人： Young Suk Chung , Jung Ho Lee
IPC分类号： F26B11/02
CPC分类号： D06F58/22
摘要： A clothing dryer capable of removing impurities, such as dust, accumulated in a hot air outlet duct thereof. The clothing dryer includes a drying tub to dry laundry contained therein using hot air supplied thereto, a hot air outlet duct to discharge the hot air, coming from the drying tub, to the outside, and a connecting unit to connect an external suction device to the hot air outlet duct. Accordingly, impurities, such as dust, accumulated in the hot air outlet duct can be removed by a suction force of the suction device, thereby enabling the cleaning of the hot air outlet duct.
摘要翻译：能够除去积存在其热风出口管内的灰尘等杂质的衣物烘干机。衣物烘干机包括：干燥桶，用于供应热风的干燥衣物，将来自干燥桶的热空气排出到外部的热空气出口管道;以及连接单元，将外部抽吸装置连接到热风出口管道。因此，积存在热风出口管道中的灰尘等杂质可以通过抽吸装置的吸力除去，从而能够清洁热风出口管道。

67. 发明授权

US07271066B2 Semiconductor device and a method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07271066B2
公开(公告)日：2007-09-18
申请号：US11086286
申请日：2005-03-23
申请人： Kwan Yong Lim , Heung Jae Cho , Jung Ho Lee
发明人： Kwan Yong Lim , Heung Jae Cho , Jung Ho Lee
IPC分类号： H01L21/336
CPC分类号： H01L29/66651 , H01L21/28123
摘要： Disclosed are a semiconductor devices and method of fabricating the same. Anti-etch films are formed in the top corners of the device isolation film using a material that has a different etch selectivity ratio from nitride or oxide and is not etched in an oxide gate pre-cleaning process. It is thus possible to prevent formation of a moat at the top corners of the device isolation film and the gate oxide film from being thinly formed, thereby improving reliability and electrical characteristics of the device.
摘要翻译：公开了半导体器件及其制造方法。使用具有与氮化物或氧化物不同的蚀刻选择比的材料并且在氧化物栅极预清洁工艺中不被蚀刻的材料在器件隔离膜的顶角形成防蚀刻膜。因此，可以防止在器件隔离膜和栅极氧化膜的顶角形成护城河，从而提高器件的可靠性和电气特性。

68. 发明申请

US20060209245A1 Liquid crystal display and a method for fabricating the same 审中-公开
公开(公告)号：US20060209245A1
公开(公告)日：2006-09-21
申请号：US11313965
申请日：2005-12-22
申请人： Joong-Hyun Mun , Jang-Kun Song , Yong-Woo Choi , Bo-Sung Kim , Kwan-Wook Jung , Jung-Ho Lee , Hyo-Rak Nam
发明人： Joong-Hyun Mun , Jang-Kun Song , Yong-Woo Choi , Bo-Sung Kim , Kwan-Wook Jung , Jung-Ho Lee , Hyo-Rak Nam
IPC分类号： G02F1/1339
CPC分类号： G02F1/136286 , G02F1/133345 , G02F1/133707 , G02F1/13394 , G02F1/134336 , G02F1/136213 , G02F1/136227 , G02F1/1368 , G02F2001/13398 , G02F2001/134372 , G02F2001/136231 , G02F2201/123 , H01L27/124 , H01L29/78669
摘要： A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.

69. 发明授权

US07053005B2 Method of forming a silicon oxide layer in a semiconductor manufacturing process 有权
标题翻译：在半导体制造工艺中形成氧化硅层的方法
公开(公告)号：US07053005B2
公开(公告)日：2006-05-30
申请号：US10779733
申请日：2004-02-18
申请人： Jung-Ho Lee , Dong-Jun Lee , Jung-Sik Choi
发明人： Jung-Ho Lee , Dong-Jun Lee , Jung-Sik Choi
IPC分类号： H01L21/02
CPC分类号： H01L27/10894 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/1283 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31051 , H01L21/3125 , H01L21/316 , H01L21/31612 , H01L21/76229 , H01L27/1052 , H01L27/10882 , Y10T428/31663
摘要： A method of forming a silicon oxide layer in a semiconductor manufacturing process includes forming a planar spin on glass (SOG) layer by coating an SOG composition onto a semiconductor substrate having a stepped portion formed thereon, pre-baking the substrate at a temperature of from about 100 to about 500° C. for about 1 to about 10 minutes, maintaining a loading temperature of a furnace into which the substrate will be loaded at about 500° C. or less, loading the substrate into the furnace, and main-baking the substrate at a temperature of from about 500 to about 1200° C. for about 10 to about 120 minutes to form a silicon oxide layer on the substrate. The SOG layer is transformed into the silicon oxide layer through an optimized process condition. Thus, the silicon oxide layer may have minimal defects and a good layer property.
摘要翻译：在半导体制造工艺中形成氧化硅层的方法包括通过将SOG组合物涂覆到其上形成有阶梯部分的半导体衬底上，在玻璃（SOG）层上形成平面自旋，约100至约500℃约1至约10分钟，保持基材将在约500℃或更低的温度下加载到其中的炉的装载温度，将基底装入炉中，并将主烘烤该衬底在约500至约1200℃的温度下进行约10至约120分钟，以在衬底上形成氧化硅层。 SOG层通过优化的工艺条件转化为氧化硅层。因此，氧化硅层可以具有最小的缺陷和良好的层特性。

70. 发明申请

US20060080557A1 Storage medium storing multimedia data for providing moving image reproduction function and programming function, and apparatus and method for reproducing moving image 审中-公开
标题翻译：存储用于提供运动图像再现功能和编程功能的多媒体数据的存储介质，以及用于再现运动图像的装置和方法
公开(公告)号：US20060080557A1
公开(公告)日：2006-04-13
申请号：US11245337
申请日：2005-10-07
申请人： Kwang-min Kim , Jung-ho Lee , Duhee Lee
发明人： Kwang-min Kim , Jung-ho Lee , Duhee Lee
IPC分类号： G06F12/14 , H04L9/32 , G06F11/30
CPC分类号： G11B27/329 , G11B27/105 , G11B27/11 , G11B2020/1288 , G11B2220/2541 , G11B2220/2562
摘要： A storage medium storing multimedia data for providing a moving image reproduction function and a programming function, and an apparatus and method for reproducing a moving image from the storage medium the apparatus including a storage unit which stores the program data downloaded from the storage medium or from a network and download management information indicating whether the downloaded program data can be executed independently without the storage medium; a reading unit which reads the downloaded program data and the download management information from the storage unit; and a reproduction unit which reproduces the downloaded program data with reference to the download management information. Therefore, it is possible to provide not only a typical moving image reproduction function but also a user interaction function and/or other additional functions to a user and to independently execute a program application downloaded to a local storage from a storage medium or from an external database via a network without the storage medium.
摘要翻译：一种存储用于提供运动图像再现功能和编程功能的多媒体数据的存储介质，以及用于从存储介质再现运动图像的装置和方法，该装置包括存储单元，该存储单元存储从存储介质下载的程序数据网络和下载管理信息，指示是否可以独立地执行下载的程序数据而没有存储介质; 读取单元，其从存储单元读取下载的程序数据和下载管理信息; 以及再现单元，其根据下载管理信息再现下载的程序数据。因此，不仅可以向用户提供典型的运动图像再现功能，还可以向用户提供用户交互功能和/或其他附加功能，并且独立地从存储介质或从外部提供下载到本地存储器的程序应用数据库通过网络没有存储介质。

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