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61. 发明授权

US07968507B2 Composition for stripping and stripping method 有权
标题翻译：汽提和汽提方法的组成
公开(公告)号：US07968507B2
公开(公告)日：2011-06-28
申请号：US12214658
申请日：2008-06-20
申请人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk Il Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
发明人： Ji Sun Lee , Hong Sick Park , Jong Hyun Choung , Sun Young Hong , Bong Kyun Kim , Byeong Jin Lee , Byung Uk Kim , Jong Hyun Jeong , Suk Il Yoon , Seong Bae Kim , Sung Gun Shin , Soon Beom Huh , Se Hwan Jung , Doo Young Jang
IPC分类号： C11D7/06
CPC分类号： G03F7/425
摘要： The present invention provides a stripping composition and a stripping method capable of easily stripping a color resist or an organic insulating film formed on a substrate to reuse the substrate when defects are found during a process of forming the color filter or organic insulating film on the substrate. In one embodiment, the stripping composition includes about 0.5 to about 45 wt % of hydroxide compound, about 10 to about 89 wt % of alkyleneglycolalkylether compound, about 5 to about 45 wt % of alkanolamine compound, and about 0.01 to about 5 wt % of inorganic salt compound. Advantageously, the stripping process can be performed without damaging a thin film transistor of a bottom substrate while removing the color resist or organic insulating film.
摘要翻译：本发明提供了一种剥离组合物和剥离方法，其能够在形成基板上的滤色器或有机绝缘膜的过程中发现缺陷时容易地剥离形成在基板上的着色抗蚀剂或有机绝缘膜，以重新使用基板。在一个实施方案中，汽提组合物包含约0.5至约45重量％的氢氧化物化合物，约10至约89重量％的亚烷基二醇烷基醚化合物，约5至约45重量％的烷醇胺化合物和约0.01至约5重量％的无机盐化合物。有利地，可以在不损坏底部基板的薄膜晶体管的同时进行剥离处理，同时移除彩色抗蚀剂或有机绝缘膜。

62. 发明授权

US07824972B2 Producing a thin film transistor substrate by using a photoresist pattern having regions of different thicknesses 有权
标题翻译：通过使用具有不同厚度的区域的光致抗蚀剂图案来生产薄膜晶体管基板
公开(公告)号：US07824972B2
公开(公告)日：2010-11-02
申请号：US11985199
申请日：2007-11-13
申请人： Jong-hyun Choung , Byeong-jin Lee , Hong-sick Park , Sun-young Hong , Bong-kyun Kim , Won-suk Shin
发明人： Jong-hyun Choung , Byeong-jin Lee , Hong-sick Park , Sun-young Hong , Bong-kyun Kim , Won-suk Shin
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1288 , G02F1/136227 , H01L27/1214
摘要： A thin film transistor substrate that has reduced production cost and defect rate is presented. The thin film transistor substrate includes a gate wiring line formed on an insulating substrate and including a gate electrode, a data wiring line formed on the gate wiring line and including a source electrode and a drain electrode, a passivation layer pattern formed on parts of the data wiring line other than the drain electrode and a pixel region, and a pixel electrode electrically connected to the drain electrode. The pixel electrode includes zinc oxide.
摘要翻译：介绍了降低生产成本和缺陷率的薄膜晶体管基板。薄膜晶体管基板包括形成在绝缘基板上并包括栅电极的栅极布线，形成在栅极布线上并包括源电极和漏电极的数据布线，形成在栅极布线的一部分上的钝化层图案除了漏电极和像素区域之外的数据布线，以及与漏电极电连接的像素电极。像素电极包括氧化锌。

63. 发明授权

US07820368B2 Photoresist stripper composition and methods for forming wire structures and for fabricating thin film transistor substrate using composition 有权
标题翻译：光刻胶剥离剂组合物和用于形成引线结构的方法和用于使用组合物制造薄膜晶体管基板的方法
公开(公告)号：US07820368B2
公开(公告)日：2010-10-26
申请号：US11493225
申请日：2006-07-25
申请人： Hong-sick Park , Shi-yul Kim , Jong-hyun Choung , Won-suk Shin
发明人： Hong-sick Park , Shi-yul Kim , Jong-hyun Choung , Won-suk Shin
IPC分类号： H01L21/44
CPC分类号： G03F7/425 , H01L21/2855 , H01L21/31133 , H01L21/76838 , H01L21/7685 , H01L27/124 , H01L27/1288 , H01L29/41733 , H01L29/458 , H01L29/4908
摘要： A photoresist stripper composition, a method for forming wire structures thereby, and a method of fabricating a thin film transistor substrate using the composition. The photoresist stripper composition includes about 50 WT % to about 70 WT % of butyldiglycol, about 20 to about 40 WT % of an alkylpyrrolidone, about 1 WT % to about 10 WT % of an organic amine compound, about 1 to about 5 WT % of aminopropylmorpholine, and about 0.01 to about 0.5 WT % of a mercapto compound.
摘要翻译：光致抗蚀剂剥离剂组合物，由此形成引线结构的方法，以及使用该组合物制造薄膜晶体管基板的方法。光致抗蚀剂剥离剂组合物包含约50WW％至约70WT％的丁基二甘醇，约20至约40WT％的烷基吡咯烷酮，约1％WT至约10％WT的有机胺化合物，约1至约5％WT％的氨基丙基吗啉和约0.01至约0.5WT％的巯基化合物。

64. 发明授权

US07776633B2 Thin film transistor array panel and method of manufacture 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07776633B2
公开(公告)日：2010-08-17
申请号：US11696097
申请日：2007-04-03
申请人： Jong-Hyun Choung , Hong-Sick Park , Joo-Ae Yoon , Jeong-Min Park , Doo-Hee Jung , Sun-Young Hong , Bong-Kyun Kim , Won-Suk Shin , Byeong-Jin Lee
发明人： Jong-Hyun Choung , Hong-Sick Park , Joo-Ae Yoon , Jeong-Min Park , Doo-Hee Jung , Sun-Young Hong , Bong-Kyun Kim , Won-Suk Shin , Byeong-Jin Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , H01L27/1214
摘要： A method of manufacturing a thin film transistor array panel, including: forming gate lines on a substrate; forming a gate insulating layer on the gate lines; forming semiconductor layers on the gate insulating layer; forming data lines and drain electrodes on the semiconductor layers; depositing a passivation layer on the data lines and the drain electrodes; forming a first photoresist layer including a first portion and a second portion that is thinner than the first portion on the passivation layer; forming a first preliminary contact hole exposing the data lines by etching the passivation layer by using the first photoresist layer as a mask; removing the second portion of the first photoresist; forming a first contact hole by expanding the first preliminary contact hole and opening portions by etching the passivation layer by using the first portion of the first photoresist layer as a mask; depositing a conductor layer; and forming pixel electrodes in the opening portions and a first contact assistant member in the first contact hole by removing the first photoresist layer and the conductor layer located thereon.
摘要翻译：一种制造薄膜晶体管阵列面板的方法，包括：在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层; 在半导体层上形成数据线和漏电极; 在数据线和漏电极上沉积钝化层; 形成第一光致抗蚀剂层，其包括比钝化层上的第一部分更薄的第一部分和第二部分; 通过使用第一光致抗蚀剂层作为掩模，形成通过蚀刻钝化层而暴露数据线的第一预接触孔; 去除第一光致抗蚀剂的第二部分; 通过使用第一光致抗蚀剂层的第一部分作为掩模，通过蚀刻钝化层来扩展第一预接触孔和开口部来形成第一接触孔; 沉积导体层; 以及通过去除位于其上的第一光致抗蚀剂层和导体层，在开口部分中形成像素电极和第一接触孔中的第一接触辅助部件。

65. 发明申请

US20100120209A1 ETCHANT COMPOSITION, AND METHOD OF FABRICATING METAL PATTERN AND THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME 有权
标题翻译：蚀刻组合物，以及使用其制造金属图案和薄膜晶体管阵列板的方法
公开(公告)号：US20100120209A1
公开(公告)日：2010-05-13
申请号：US12432437
申请日：2009-04-29
申请人： Young-Joo CHOI , Bong-Kyun KIM , Byeong-Jin LEE , Jong-Hyun CHOUNG , Sun-Young HONG , Nam-Seok SUH , Hong-Sick PARK , Ky-Sub KIM , Seung-Yong LEE , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Seung-Jae YANG , Hyun-Kyu LEE , Sang-Hoon JANG , Min-Ki LIM
发明人： Young-Joo CHOI , Bong-Kyun KIM , Byeong-Jin LEE , Jong-Hyun CHOUNG , Sun-Young HONG , Nam-Seok SUH , Hong-Sick PARK , Ky-Sub KIM , Seung-Yong LEE , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Seung-Jae YANG , Hyun-Kyu LEE , Sang-Hoon JANG , Min-Ki LIM
IPC分类号： H01L21/336 , C09K13/06 , G03F7/20
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/18 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
摘要翻译：提供蚀刻剂组合物。蚀刻剂组合物包括约40至约65重量％的磷酸，约2至约5重量％的硝酸，约2至约20重量％的乙酸，约0.1至约2重量％的含磷酸盐的化合物，约0.1至约2重量％的同时含有氨基和羧基的化合物，以及组合物总重量的剩余重量百分数。

66. 发明授权

US07566596B2 Method of manufacturing a thin film transistor substrate and stripping composition 有权
标题翻译：制造薄膜晶体管基板和剥离组合物的方法
公开(公告)号：US07566596B2
公开(公告)日：2009-07-28
申请号：US11875028
申请日：2007-10-19
申请人： Hong-Sik Park , Shi-Yul Kim , Jong-Hyun Choung , Won-Suk Shin
发明人： Hong-Sik Park , Shi-Yul Kim , Jong-Hyun Choung , Won-Suk Shin
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1288 , G02F1/134336 , G02F1/1362 , G02F1/1368 , G03F7/425 , H01L27/1214 , H01L27/124
摘要： A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a photoresist pattern to remove the conductive layer using a stripping composition and dissolving the conductive layer. The method of manufacturing a thin film transistor substrate is capable of improving an efficiency of manufacturing process of the thin film transistor substrate. In addition, the stripping composition is recycled.
摘要翻译：制造薄膜晶体管基板的方法包括形成晶体管薄层图案，形成保护层，形成光致抗蚀剂膜，形成彼此分离的像素电极和导电层，剥离光致抗蚀剂图案以除去导电使用剥离组合物并溶解导电层。制造薄膜晶体管基板的方法能够提高薄膜晶体管基板的制造工艺的效率。此外，汽提组合物被再循环。

67. 发明授权

US07563656B2 Method of manufacturing display substrate having improved contact with pixel electrode 失效
标题翻译：具有改善与像素电极接触的显示基板的制造方法
公开(公告)号：US07563656B2
公开(公告)日：2009-07-21
申请号：US11616542
申请日：2006-12-27
申请人： Jong-Hyun Choung , Hong-Sick Park , Joo-Ae Youn , Sun-Young Hong , Bong-Kyun Kim , Won-Suk Shin , Doo-Hee Jung , Byeong-Jin Lee
发明人： Jong-Hyun Choung , Hong-Sick Park , Joo-Ae Youn , Sun-Young Hong , Bong-Kyun Kim , Won-Suk Shin , Doo-Hee Jung , Byeong-Jin Lee
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/124 , G02F1/136286 , G02F2001/136231 , H01L27/1288
摘要： A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode.
摘要翻译：显示基板包括绝缘基板，薄膜晶体管，接触电极和像素电极。薄膜晶体管包括控制电极，半导体图案，第一电极和第二电极。控制电极在绝缘基板上。半导体图案在控制电极上。第一电极位于半导体图案上。第二电极与半导体图案上的第一电极间隔开。接触电极包括接触部分和底切部分。接触部分电连接到第二电极以部分地暴露半导体图案。底切部分电连接到接触部分以覆盖半导体图案。像素电极通过接触电极的接触部分电连接到第二电极。

68. 发明授权

US07465613B2 Method of manufacturing display substrate having improved contact with pixel electrode 有权
公开(公告)号：US07465613B2
公开(公告)日：2008-12-16
申请号：US11616542
申请日：2006-12-27
申请人： Jong-Hyun Choung , Hong-Sick Park , Joo-Ae Youn , Sun-Young Hong , Bong-Kyun Kim , Won-Suk Shin , Doo-Hee Jung , Byeong-Jin Lee
发明人： Jong-Hyun Choung , Hong-Sick Park , Joo-Ae Youn , Sun-Young Hong , Bong-Kyun Kim , Won-Suk Shin , Doo-Hee Jung , Byeong-Jin Lee
IPC分类号： H01L21/00 , H01L21/84
摘要： A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode.

69. 发明授权

US07300827B2 Method of manufacturing a thin film transistor substrate and stripping composition 有权
标题翻译：制造薄膜晶体管基板和剥离组合物的方法
公开(公告)号：US07300827B2
公开(公告)日：2007-11-27
申请号：US11215140
申请日：2005-08-30
申请人： Hong-Sick Park , Shi-Yul Kim , Jong-Hyun Choung , Won-Suk Shin
发明人： Hong-Sick Park , Shi-Yul Kim , Jong-Hyun Choung , Won-Suk Shin
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L27/1288 , G02F1/134336 , G02F1/1362 , G02F1/1368 , G03F7/425 , H01L27/1214 , H01L27/124
摘要： A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a photoresist pattern to remove the conductive layer using a stripping composition and dissolving the conductive layer. The method of manufacturing a thin film transistor substrate is capable of improving an efficiency of manufacturing process of the thin film transistor substrate. In addition, the stripping composition is recycled.
摘要翻译：制造薄膜晶体管基板的方法包括形成晶体管薄层图案，形成保护层，形成光致抗蚀剂膜，形成彼此分离的像素电极和导电层，剥离光致抗蚀剂图案以除去导电使用剥离组合物并溶解导电层。制造薄膜晶体管基板的方法能够提高薄膜晶体管基板的制造工艺的效率。此外，汽提组合物被再循环。

70. 发明申请

US20070167025A1 Etchant and method for fabricating liquid crystal display using the same 有权
标题翻译：用于制造使用其的液晶显示器的蚀刻剂和方法
公开(公告)号：US20070167025A1
公开(公告)日：2007-07-19
申请号：US11486477
申请日：2006-07-13
申请人： Hong-sick Park , Shi-yul Kim , Jong-hyun Choung , Won-suk Shin
发明人： Hong-sick Park , Shi-yul Kim , Jong-hyun Choung , Won-suk Shin
IPC分类号： H01L21/302 , C23F1/00 , H01L21/00
CPC分类号： G02F1/13439 , H01L31/022466 , H01L31/1884
摘要： Provided are an etchant used for a transparent conductive oxide layer and a method for fabricating a liquid crystal display (LCD) using the etchant. The etchant includes 2-5 wt % sulfuric acid, 0.02-10 wt % hydrogen sulfate of alkali metal, and deionized water as the remainder.
摘要翻译：提供了用于透明导电氧化物层的蚀刻剂和使用蚀刻剂制造液晶显示器（LCD）的方法。蚀刻剂包括2-5重量％的硫酸，0.02-10重量％的碱金属硫酸氢盐和剩余的去离子水。

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