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61. 发明授权

US07538017B2 Method of manufacturing a thin film transistor, a thin film transistor manufactured by the method, a method of manufacturing flat panel display device, and a flat panel display device manufactured by the method 有权
标题翻译：制造薄膜晶体管的方法，通过该方法制造的薄膜晶体管，平板显示装置的制造方法以及通过该方法制造的平板显示装置
公开(公告)号：US07538017B2
公开(公告)日：2009-05-26
申请号：US11263058
申请日：2005-10-31
申请人： Min-Kyu Kim , Jae-Bon Koo , Yeon-Gon Mo , Hyun-Soo Shin
发明人： Min-Kyu Kim , Jae-Bon Koo , Yeon-Gon Mo , Hyun-Soo Shin
IPC分类号： H01L21/3205
CPC分类号： H01L27/1262 , H01L27/1214 , H01L27/1266 , H01L27/3244 , H01L27/3248 , H01L27/3274 , H01L51/5253
摘要： Provided are a method of manufacturing a plastic substrate having a TFT, a substrate manufactured thereby, a method of manufacturing a flat panel display device, and a flat display device manufactured thereby, which can be used for a flexible flat display device. The method includes: preparing a film in which a plurality of conductive patterns are included; bonding the film to a substrate; forming the TFT in a manner such that it is electrically connected to the conductive pattern on the film; and forming an insulating layer covering the TFT on the film.
摘要翻译：提供一种制造具有TFT的塑料基板的方法，由其制造的基板，制造平板显示装置的方法以及由此制造的平面显示装置，其可以用于柔性平板显示装置。该方法包括：制备其中包括多个导电图案的膜; 将膜粘合到基底上; 以这样的方式形成TFT，使得其电连接到膜上的导电图案; 以及在膜上形成覆盖TFT的绝缘层。

62. 发明申请

US20090020753A1 Method of manufacturing semiconductor active layer, method of manufacturing thin film transistor using the same and thin film transistor having semiconductor active layer 有权
标题翻译：半导体有源层的制造方法，使用其的薄膜晶体管的制造方法以及具有半导体活性层的薄膜晶体管
公开(公告)号：US20090020753A1
公开(公告)日：2009-01-22
申请号：US12219037
申请日：2008-07-15
申请人： Jong-han Jeong , Jae-kyeong Jeong , Jin-seong Park , Yeon-gon Mo , Hui-won Yang , Min-kyu Kim , Tae-kyung Ahn , Hyun-soo Shin , Hun jung Lee
发明人： Jong-han Jeong , Jae-kyeong Jeong , Jin-seong Park , Yeon-gon Mo , Hui-won Yang , Min-kyu Kim , Tae-kyung Ahn , Hyun-soo Shin , Hun jung Lee
IPC分类号： H01L29/12 , C23C14/00 , H01L21/00
CPC分类号： C23C14/086 , C23C14/3464 , H01L21/02422 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： A method of manufacturing an IGZO active layer includes depositing ions including In, Ga, and Zn from a first target, and depositing ions including In from a second target having a different atomic composition from the first target. The deposition of ions from the second target may be controlled to adjust an atomic % of In in the IGZO layer to be about 45 atomic % to about 80 atomic %.
摘要翻译：制造IGZO有源层的方法包括从第一靶标沉积包括In，Ga和Zn的离子，以及从具有不同原子组成的第二靶子和第一靶材沉积包含In的离子。可以控制来自第二靶的离子的沉积，以将IGZO层中的In的原子％调节为约45原子％至约80原子％。

63. 发明申请

US20080274575A1 Vertical semiconductor light-emitting device and method of manufacturing the same 失效
标题翻译：垂直半导体发光器件及其制造方法
公开(公告)号：US20080274575A1
公开(公告)日：2008-11-06
申请号：US12216015
申请日：2008-06-27
申请人： Hyun Soo Shin , Kyu-Ho Shin , Jae-Hee Cho
发明人： Hyun Soo Shin , Kyu-Ho Shin , Jae-Hee Cho
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , B82Y20/00 , H01S5/0217 , H01S5/183 , H01S5/34333
摘要： Provided is a vertical semiconductor light-emitting device and a method of manufacturing the same. The method may include sequentially forming a lower clad layer, an active layer, and an upper clad layer on a substrate to form a semiconductor layer and forming first electrode layers on the upper clad layer. A metal support layer may be formed on each of the first electrode layers and a trench may be formed between the first electrode layers. The substrate may be removed and a second electrode layer may be formed on the lower clad layer.
摘要翻译：提供了一种垂直半导体发光器件及其制造方法。该方法可以包括在衬底上顺序地形成下覆盖层，有源层和上覆盖层，以形成半导体层，并在上覆盖层上形成第一电极层。可以在每个第一电极层上形成金属支撑层，并且可以在第一电极层之间形成沟槽。可以去除衬底，并且可以在下包层上形成第二电极层。

64. 发明申请

US20080157203A1 SEMICONDUCTOR DEVICE HAVING EDMOS TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有EDMOS晶体管的半导体器件及其制造方法
公开(公告)号：US20080157203A1
公开(公告)日：2008-07-03
申请号：US11955235
申请日：2007-12-12
申请人： Hyun-Soo Shin
发明人： Hyun-Soo Shin
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7835 , H01L29/0619 , H01L29/0634 , H01L29/0653 , H01L29/42368 , H01L29/66659
摘要： A semiconductor device having an EDMOS transistor and a method for forming the same are provided. The semiconductor device includes source and drain regions formed separately in a semiconductor substrate, a first gate insulating layer filling a trench formed in the substrate between the source and drain regions, the first gate insulating layer being adjacent to the drain region and separated from the source region, a second gate insulating layer formed over the substrate between the first gate insulating layer and the source region, the second gate insulating layer being thinner than the first gate insulating layer, a gate electrode formed over the first and second gate insulating layers, and a doped drift region formed in the substrate under the first gate insulating layer, the doped drift region being in contact with the drain region. This reduces the planar area of the EDMOS transistor, thereby achieving highly integrated semiconductor devices.
摘要翻译：提供具有EDMOS晶体管的半导体器件及其形成方法。半导体器件包括在半导体衬底中分开形成的源极和漏极区域，填充在源极和漏极区域之间形成在衬底中的沟槽的第一栅极绝缘层，第一栅极绝缘层邻近漏极区域并与源极分离形成在所述第一栅极绝缘层和所述源极区域之间的所述基板上的第二栅极绝缘层，所述第二栅极绝缘层比所述第一栅极绝缘层薄，形成在所述第一和第二栅极绝缘层上的栅电极，以及掺杂漂移区，形成在所述第一栅极绝缘层下的所述衬底中，所述掺杂漂移区与所述漏极区接触。这降低了EDMOS晶体管的平面面积，从而实现了高度集成的半导体器件。

65. 发明申请

US20080124904A1 Method for Fabricating Semiconductor Device 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20080124904A1
公开(公告)日：2008-05-29
申请号：US11773180
申请日：2007-07-03
申请人： HYUN SOO SHIN
发明人： HYUN SOO SHIN
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/266 , H01L21/823807
摘要： Provided is a method for fabricating a semiconductor device. The method includes implanting ions into an n-channel metal oxide semiconductor (NMOS) region of a semiconductor substrate so as to form a channel. The implanting can be performed by implanting boron ions at an ion implanting energy of 20 keV to 100 keV using a photoresist layer formed on the semiconductor substrate as an ion implanting mask for inhibiting ions from entering the semiconductor substrate below the photoresist layer. The photoresist layer can be a mid-ultra-violet photoresist having a reduced thickness.
摘要翻译：提供一种制造半导体器件的方法。该方法包括将离子注入到半导体衬底的n沟道金属氧化物半导体（NMOS）区域中以便形成沟道。可以通过使用形成在半导体衬底上的光致抗蚀剂层作为离子注入掩模，以20keV至100keV的离子注入能量注入硼离子来进行注入，用于抑制离子进入光致抗蚀剂层下方的半导体衬底。光致抗蚀剂层可以是具有减小的厚度的中等紫外光致抗蚀剂。

66. 发明申请

US20070085961A1 Flexible flat panel display 有权
标题翻译：柔性平板显示屏
公开(公告)号：US20070085961A1
公开(公告)日：2007-04-19
申请号：US11523607
申请日：2006-09-20
申请人： Jae-Kyeong Jeong , Jae-Bon Koo , Hyun-Soo Shin , Se-Yeoul Kwon , Yeon-Gon Mo
发明人： Jae-Kyeong Jeong , Jae-Bon Koo , Hyun-Soo Shin , Se-Yeoul Kwon , Yeon-Gon Mo
IPC分类号： G02F1/1345
CPC分类号： H01L27/3276 , H01L2251/5338
摘要： A flexible flat panel display prevents electronic units, such as a flexible printed circuit board and a driving IC, from being separated from the flexible flat panel display even when the display unit is bent. The flexible flat panel display includes: a flexible display unit including a display area adapted to display an image, a first side and a second side parallel to edges of the display area, and a third side and a fourth side perpendicular to the first and second sides, the third side and the fourth being adapted to being bent; and electronic units arranged solely on at least one of the first and second sides and absent the third and fourth sides.
摘要翻译：即使显示单元弯曲，柔性平板显示器也可防止电子单元，例如柔性印刷电路板和驱动IC与柔性平板显示器分离。柔性平板显示器包括：柔性显示单元，包括适于显示图像的显示区域，平行于显示区域边缘的第一侧面和第二侧面，以及垂直于第一和第二侧面的第三侧面和第四侧面侧面，第三面和第四面适于弯曲; 以及仅在第一和第二侧中的至少一个上排列并且不存在第三和第四侧的电子单元。

67. 发明授权

US6108044A Receiver for receiving both HDTV and NTSC and method for selecting received signals 失效
标题翻译：用于接收HDTV和NTSC的接收机以及用于选择接收信号的方法
公开(公告)号：US6108044A
公开(公告)日：2000-08-22
申请号：US58253
申请日：1998-04-10
申请人： Hyun-soo Shin
发明人： Hyun-soo Shin
IPC分类号： H04N5/44 , H04N5/46
CPC分类号： H04N5/46 , H04N21/42638 , H04N21/4382 , H04N21/44209 , H04N21/485 , H04N5/4401
摘要： A receiver which receives both HDTV and NTSC signals, and a method for selecting received signals, are provided. According to this receiver and method, a broadcasting mode and a channel mode are set by the user. When the broadcasting mode is set to be an NTSC mode, only an NTSC signal is selected to be displayed. When the broadcasting mode is set to be an HDTV mode, only a high-definition (ATV) signal is selected to be displayed. When the judged broadcasting mode is an automatic mode, a judgement is made by the receiver whether an NTSC signal exists in a received signal. If no NTSC signal is present in the received signal, the ATV signal is selected for display. If the NTSC signal exists in the currently-received signal, selection between NTSC and ATV signals is made based on the channel mode set by the user. If the channel mode is set to NTSC, then the NTSC signal is selected for display. If the channel mode is set to HDTV, then the ATV signal is selected for display. Therefore, the HDTV and NTSC signals can both be received, and when both NTSC and HDTV signals exist in a channel, one of them can be selectively received.
摘要翻译：同时提供接收HDTV和NTSC信号的接收机以及接收信号的选择方法。根据该接收方法，用户设定广播模式和频道模式。当广播模式被设置为NTSC模式时，仅选择显示NTSC信号。当广播模式被设置为HDTV模式时，仅选择显示高分辨率（ATV）信号。当所判断的广播模式是自动模式时，由接收机判断接收到的信号中是否存在NTSC信号。如果接收信号中没有NTSC信号，则选择ATV信号进行显示。如果NTSC信号存在于当前接收到的信号中，则基于由用户设置的信道模式进行NTSC和ATV信号之间的选择。如果通道模式设置为NTSC，则选择NTSC信号进行显示。如果频道模式设置为HDTV，则选择ATV信号进行显示。因此，可以接收HDTV和NTSC信号，并且当NTSC和HDTV信号都存在于信道中时，可以选择性地接收其中的一个。

68. 发明授权

US5991341A TCM decoder of high definition television receiver and decoding method 失效
标题翻译： TCM解码器的高分辨率电视接收机和解码方法
公开(公告)号：US5991341A
公开(公告)日：1999-11-23
申请号：US27195
申请日：1998-02-20
申请人： Hyun-soo Shin
发明人： Hyun-soo Shin
IPC分类号： H04N19/00 , H03M13/23 , H04L1/00 , H04N5/21 , H04N7/015 , H04N19/102 , H04N19/166 , H04N19/194 , H04N19/196 , H04N19/423 , H04N19/65 , H04N19/70 , H04N19/80 , H04N19/85 , H04N19/88 , H04N19/89 , H04L23/02
CPC分类号： H04L1/006 , H03M13/256 , H04L1/0054 , H04N5/211 , H04N5/4401
摘要： A trellis-coded modulation (TCM) decoder of a high-definition television (HDTV) receiver is disclosed for use in US-type terrestrial broadcasting, as is a corresponding decoding method. The TCM decoder optionally uses a NTSC-reject comb filter to remove the interference from a co-channel NTSC-type signal. When the input HDTV signal has been passed through the NTSC rejection filter, an 8-state decoding mode is appropriate and a segment sync suspension unit is used to directly connect the data before and after a twelve symbol segment sync. When the input HDTV signal has not been passed through the NTSC rejection filter, an 4-state decoding mode is appropriate and the input HDTV signal is passed unchanged (i.e., without use of the segment sync suspension unit). A field delay directly connects the data of the data segment just before the field sync segment to the data of the data segment just after the field sync segment. A Viterbi decoder decodes the output of the field delay in both an 8-state case and a 4-state case. Therefore, decoding is performed in consideration of the effects of uncoded segment sync and field sync signals, thereby achieving stable decoding.
摘要翻译：公开了用于美式地面广播的高分辨率电视（HDTV）接收机的网格编码调制（TCM）解码器，以及相应的解码方法。 TCM解码器可选地使用NTSC抑制梳状滤波器来消除来自同频道NTSC型信号的干扰。当输入的HDTV信号通过NTSC抑制滤波器时，8状态解码模式是合适的，并且使用分段同步停止单元直接连接十二符号段同步之前和之后的数据。当输入的HDTV信号尚未通过NTSC抑制滤波器时，4状态解码模式是合适的，输入的HDTV信号不变（即不使用片段同步悬架单元）。场延迟直接将场同步段之前的数据段的数据直接连接到场同步段之后的数据段的数据。维特比解码器在8状态情况和4状态情况下解码场延迟的输出。因此，考虑到未编码段同步和场同步信号的影响进行解码，从而实现稳定的解码。

69. 发明授权

US5387947A Motion vector detecting method of a video signal 失效
标题翻译：视频信号的运动矢量检测方法
公开(公告)号：US5387947A
公开(公告)日：1995-02-07
申请号：US85796
申请日：1993-07-06
申请人： Hyun-Soo Shin
发明人： Hyun-Soo Shin
IPC分类号： H04N7/32 , G06T7/20 , H04N5/14 , H04N7/01 , H04N7/26 , H04N7/36 , H04N11/04 , H04N7/130
CPC分类号： H04N5/145 , G06T7/206 , H04N19/51 , H04N19/527
摘要： A motion vector detecting method of a digital video signal includes an edge image detecting process for detecting an edge for the video signal within a current frame and a previous frame, an image converting process for converting the edge detected image from the edge image detecting process into a binary-coded image, and a motion vector detecting process for detecting an interframe motion vector with respect to only an edge part from the binary-coded image.
摘要翻译：数字视频信号的运动矢量检测方法包括用于检测当前帧和前一帧中的视频信号的边缘的边缘图像检测处理，用于将边缘检测图像从边缘图像检测处理转换成的图像转换处理二进制编码图像和运动矢量检测处理，用于仅检测来自二进制编码图像的边缘部分的帧间运动矢量。

70. 发明授权

US09362116B2 Methods of forming oxide thin film and electrical devices and thin film transistors using the methods 有权
标题翻译：使用该方法形成氧化物薄膜和电子器件和薄膜晶体管的方法
公开(公告)号：US09362116B2
公开(公告)日：2016-06-07
申请号：US14127690
申请日：2011-11-22
申请人： Hyun Jae Kim , Hyun Soo Shin , You Seung Rim
发明人： Hyun Jae Kim , Hyun Soo Shin , You Seung Rim
IPC分类号： H01L21/00 , H01L23/58 , H01L21/02 , H01L29/24 , H01L29/49 , H01L29/66 , H01L29/786
CPC分类号： H01L21/02565 , H01L21/02422 , H01L21/02554 , H01L21/02628 , H01L29/24 , H01L29/4908 , H01L29/66969 , H01L29/7869
摘要： Provided are a method of forming an oxide thin film and an electrical device and thin film transistor using the method. The method includes forming an oxide thin film on a substrate by applying a precursor solution; and performing a thermal treatment process on the substrate under a pressurized atmosphere using a gas at about 100° C. to about 400° C.
摘要翻译：提供了使用该方法形成氧化物薄膜的方法和电子器件和薄膜晶体管。该方法包括通过施加前体溶液在衬底上形成氧化物薄膜; 并且在加压气氛下使用约100℃至约400℃的气体在基板上进行热处理过程。

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