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    • 62. 发明授权
    • Broadband uniplanar coplanar transition
    • 宽带单面共面过渡
    • US06734755B2
    • 2004-05-11
    • US10147695
    • 2002-05-16
    • Jeffrey S. CitesSean M. GarnerL. Christopher HenningFang Wen
    • Jeffrey S. CitesSean M. GarnerL. Christopher HenningFang Wen
    • H03H738
    • H01P5/08
    • A broadband interconnection device (10) used for interconnection between a first transmission line (100) and a second transmission line (200), has a substrate (300) with the first transmission line (100) defined at a first side (310) on a first surface (320), the first transmission line (100) including a signal conductor (120) and at least one ground conductor (121 or 122), a signal conductor (220) of the second transmission line (200) defined on an opposite side (340) of the first surface (310), and a ground plane (260) of the second transmission line (200) on an opposed surface (360), the signal conductor (120) of the first transmission line (100) being electrically connected to the signal conductor (220) of the second transmission line (200) on the first surface (320). On the opposed surface (360), the ground plane (260) of the second transmission line (200), has at least one protrusion (261) aligned with the signal conductor (120) of the first transmission line (100).
    • 用于第一传输线(100)和第二传输线(200)之间的互连的宽带互连设备(10)具有基板(300),其中第一传输线(100)被限定在第一侧(310)上 第一表面(320),包括信号导体(120)和至少一个接地导体(121或122)的第一传输线(100),第二传输线(200)的信号导体(220) 第一传输线(100)的信号导体(120)和相对表面(360)上的第二传输线(200)的接地平面(260) 在第一表面(320)上电连接到第二传输线(200)的信号导体(220)。 在对置面(360)上,第二传输线(200)的接地面(260)具有与第一传输线(100)的信号导体(120)对准的至少一个突起(261)。
    • 69. 发明授权
    • Dual-phase red eye correction
    • 双相红眼矫正
    • US08571271B2
    • 2013-10-29
    • US13116254
    • 2011-05-26
    • Lu YuanFang WenJian Sun
    • Lu YuanFang WenJian Sun
    • G06K9/00
    • H04N1/624G06T7/11G06T7/136G06T2207/10024G06T2207/30216
    • A dual-phase approach to red eye correction may prevent overly aggressive or overly conservative red eye reduction. The dual-phase approach may include detecting an eye portion in a digital image. Once the eye portion is detected, the dual-phase approach may include the performance of a strong red eye correction for the eye portion when the eye portion includes a strong red eye. Otherwise, the dual-phase approach may include the performance of a weak red eye correction for the eye portion when the eye portion includes a weak red eye. The weak red eye may be distinguished from the strong red eye based a redness threshold that shows the weak red eye as having less redness hue than the strong red eye.
    • 红眼矫正的双相方法可以防止过度侵略或过度保守的红眼减轻。 双相方法可以包括检测数字图像中的眼部分。 一旦检测到眼睛部分,当眼部包括强红眼时,双相方法可以包括对眼部进行强红眼矫正。 否则,双眼方法可以包括当眼睛部分包括弱红眼时对眼部进行弱红眼修正。 弱红眼可以与强红眼区分开,发红度阈值显示弱红眼具有比强红眼少的发红色调。
    • 70. 发明授权
    • Replacement gate FinFET devices and methods for forming the same
    • 替代栅极FinFET器件及其形成方法
    • US08513107B2
    • 2013-08-20
    • US12693504
    • 2010-01-26
    • Bor-Wen ChanFang Wen Tsai
    • Bor-Wen ChanFang Wen Tsai
    • H01L21/3205H01L21/4763
    • H01L29/66795H01L29/66545
    • A structure and method for replacement metal gate technology is provided for use in conjunction with semiconductor fins or other devices. An opening is formed in a dielectric by removing a sacrificial gate material such as polysilicon. The surfaces of the semiconductor fin within which a transistor channel is formed, are exposed in the opening. A replacement metal gate is formed by forming a diffusion barrier layer within the opening and over a gate dielectric material, the diffusion barrier layer formation advantageously followed by an in-situ plasma treatment operation. The treatment operation utilizes at least one of argon and hydrogen and cures surface defects in the diffusion barrier layer enabling the diffusion barrier layer to be formed to a lesser thickness. The treatment operation decreases resistivity, densifies and alters the atomic ratio of the diffusion barrier layer, and is followed by metal deposition.
    • 提供了用于替代金属栅极技术的结构和方法,用于与半导体鳍片或其它器件结合使用。 通过去除诸如多晶硅的牺牲栅极材料在电介质中形成开口。 在其中形成晶体管沟道的半导体鳍片的表面在开口中露出。 通过在开口内部和栅极电介质材料上形成扩散阻挡层形成替代金属栅极,扩散阻挡层形成有利地进行原位等离子体处理操作。 处理操作利用氩和氢中的至少一种,并固化扩散阻挡层中的表面缺陷,使得扩散阻挡层能够形成较小的厚度。 处理操作降低电阻率,致密化并改变扩散阻挡层的原子比,随后进行金属沉积。