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61. 发明授权

US06242278B1 Method for forming polycrystal silicon film for semiconductor elements 失效
标题翻译：半导体元件用多晶硅膜形成方法
公开(公告)号：US06242278B1
公开(公告)日：2001-06-05
申请号：US09337920
申请日：1999-06-22
申请人： Akira Shimizu , Satoshi Takahashi , Atsuki Fukazawa
发明人： Akira Shimizu , Satoshi Takahashi , Atsuki Fukazawa
IPC分类号： H01L2100
CPC分类号： H01L28/84 , H01L27/1085
摘要： A rough surface made of polysilicon grains is formed on an amorphous silicon film disposed on a semiconductor substrate by the steps of: (i) forming an amorphous silicon-polysilicon mixed-phase layer having a first density on an activated surface of the amorphous silicon film by contacting the surface with a gas containing monosilane at a first flow rate of monosilane and at a first temperature; and (ii) annealing the amorphous silicon-polysilicon mixed-phase layer to form polysilicon grains therefrom, thereby forming a rough surface made of polysilicon grains. In the above, the improvement includes using disilane in place of monosilane at a second flow rate lower than the first flow rate and at a second temperature lower than the first temperature to form an amorphous silicon-polysilicon mixed-phase layer having a second density higher than the first density. Another improvement includes saturating the reactor with hydrogen gas during the heating step.
摘要翻译：通过以下步骤在设置在半导体衬底上的非晶硅膜上形成由多晶硅颗粒制成的粗糙表面：（i）在非晶硅膜的活化表面上形成具有第一密度的非晶硅 - 多晶硅混合相层通过使表面与含有甲硅烷的气体以第一流速的甲硅烷和第一温度接触; 和（ii）使非晶硅 - 多晶硅混合相层退火以形成多晶硅晶粒，由此形成由多晶硅颗粒制成的粗糙表面。在上述中，改进包括以低于第一流量的第二流量和低于第一温度的第二温度使用乙硅烷代替甲硅烷，并形成第二密度较高的非晶硅 - 多晶硅混合相层比第一密度。另一个改进包括在加热步骤期间用氢气使反应器饱和。

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