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61. 发明申请

US20070102288A1 Tantalum sputtering target and method of manufacturing same 有权
标题翻译：钽溅射靶及其制造方法
公开(公告)号：US20070102288A1
公开(公告)日：2007-05-10
申请号：US10551732
申请日：2004-02-19
申请人： Kunihiro Oda , Atsushi Hukushima
发明人： Kunihiro Oda , Atsushi Hukushima
IPC分类号： C23C14/00
CPC分类号： C23C14/3414
摘要： Provided is a tantalum sputtering target manufactured by working a molten and cast tantalum ingot or billet through forging, annealing and rolling, wherein the structure of the tantalum target comprises a non-recrystallized structure. The tantalum sputtering target having a high deposition speed and excellent uniformity of film, producing less arcings and particles and having excellent film forming properties, and the method capable of stably manufacturing the target can be provided by improving and devising plastic working steps such as forging and rolling, and the heat treatment step.
摘要翻译：提供了通过锻造，退火和轧制加工熔融铸造的钽锭或坯料制造的钽溅射靶，其中钽靶的结构包括未再结晶的结构。具有高沉积速度和优异均匀性的薄膜，产生较少的弧形和颗粒并且具有优异的成膜性能的钽溅射靶，以及能够稳定地制造目标的方法可以通过改进和设计塑料加工步骤来提供，例如锻造和轧制和热处理步骤。

62. 发明申请

US20070053828A1 High purity copper sulfate and method for production thereof 有权
标题翻译：高纯度硫酸铜及其制造方法
公开(公告)号：US20070053828A1
公开(公告)日：2007-03-08
申请号：US10566750
申请日：2004-07-28
申请人： Yuichiro Shindo
发明人： Yuichiro Shindo
IPC分类号： C01G3/10
CPC分类号： C01G3/10 , C01G3/003 , C01P2006/80
摘要： Provided are high purity copper sulfate wherein the content of Ag impurities is 1 wtppm or less, and having a purity of 99.99 wt % or higher, and a manufacturing method of high purity copper sulfate including the steps of dissolving crude copper sulfate crystals or copper metal, and subjecting this to active carbon treatment or solvent extraction and active carbon treatment in order to realize recrystallization. The present invention aims to provide a manufacturing method of high purity copper sulfate capable of efficiently removing impurities at a low cost by dissolving commercially available copper sulfate crystals in purified water or acid and thereafter subjecting this to the refining process, and high purity copper sulfate obtained thereby.
摘要翻译：提供了高纯度硫酸铜，其中Ag杂质的含量为1重量ppm以下，纯度为99.99重量％以上，高纯度硫酸铜的制造方法包括以下步骤：将粗硫酸铜晶体或铜金属并进行活性炭处理或溶剂萃取和活性炭处理，以实现再结晶。本发明的目的在于提供一种高纯度硫酸铜的制造方法，其能够通过将市售的硫酸铜晶体溶解在纯水或酸中而以低成本高效除去杂质，然后进行精制，得到高纯度硫酸铜从而。

63. 发明申请

US20060266158A1 High purity hafnium, target and thin film comprising said high purity hafnium, and method for producing high purity hafnium 审中-公开
标题翻译：含有高纯度铪的高纯度铪，靶和薄膜，以及高纯度铪的制造方法
公开(公告)号：US20060266158A1
公开(公告)日：2006-11-30
申请号：US10595660
申请日：2004-10-25
申请人： Yuichiro Shindo
发明人： Yuichiro Shindo
IPC分类号： C22C27/00
CPC分类号： C22C27/00 , C22B34/14 , C23C14/3414
摘要： The present invention relates to high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and an oxygen content of 40 wtppm or less, and a target and thin film formed from such high purity hafnium, and high purity hafnium having a purity of 4N or higher excluding zirconium and gas components and in which the content of sulfur and phosphorus is respectively 10 wtppm or less. The present invention also relates to a high purity hafnium material which uses a hafnium sponge with reduced zirconium as the raw material, and in which the content of oxygen, sulfur and phosphorus containing in the hafnium is reduced, as well as to a target and thin film formed from such material, and to the manufacturing method of high purity hafnium. Thereby provided is efficient and stable manufacturing technology which enables the manufacture of a high purity hafnium material, and a target and thin film formed from such material.
摘要翻译：本发明涉及不含锆和气体组分，氧含量为40重量ppm以下的纯度为4N以上的高纯度铪以及由这种高纯度铪形成的靶和薄膜，以及纯度高的铪，其纯度高不包括锆和气体成分的4N以上，其中硫和磷的含量分别为10重量ppm以下。本发明还涉及使用具有还原锆的铪海绵作为原料的高纯度铪材料，其中在铪中含有的氧，硫和磷的含量降低，并且其中靶材和薄由这种材料形成的膜以及高纯度铪的制造方法。由此提供了能够制造高纯度铪材料的高效且稳定的制造技术，以及由这种材料形成的靶和薄膜。

64. 发明申请

US20060217494A1 Basic silane coupling agent organic carboxylate composition, method for producing the same, and epoxy resin composition containing the same 有权
标题翻译：碱性硅烷偶联剂有机羧酸酯组合物，其制备方法和含有它们的环氧树脂组合物
公开(公告)号：US20060217494A1
公开(公告)日：2006-09-28
申请号：US11444728
申请日：2006-06-01
申请人： Masashi Kumagai , Takashi Ouchi , Katsuyuki Tsuchida
发明人： Masashi Kumagai , Takashi Ouchi , Katsuyuki Tsuchida
IPC分类号： C08G65/48 , C07F7/10
CPC分类号： C08G59/4238 , C07F7/1804
摘要： There are provided a composition for functioning as an effective additive for epoxy resin that is solid at room temperature and has high storage stability, and a method thereof. The composition of the present invention is a basic silane coupling agent organic carboxylate composition obtained by first synthesizing an organic carboxylate of a basic silane coupling agent by reacting a basic silane coupling agent and an organic carboxylic acid, and subsequently heating and mixing the organic carboxylate of the basic silane coupling agent with a compound exhibiting good affinity for the basic silane coupling agent or organic carboxylic acid and having a softening point or melting point of 40° C. or greater.
摘要翻译：提供了用作在室温下为固体并具有高储存稳定性的环氧树脂的有效添加剂的组合物及其方法。本发明的组合物是通过使碱性硅烷偶联剂与有机羧酸反应，首先合成碱性硅烷偶联剂的有机羧酸酯，然后将所述碱性硅烷偶联剂与对所述碱性硅烷偶联剂或有机羧酸具有良好亲和性且软化点或熔点为40℃以上的化合物。

65. 发明申请

US20060189164A1 Hafnium alloy target and process for producing the same 有权
标题翻译：铪合金靶材及其制造方法
公开(公告)号：US20060189164A1
公开(公告)日：2006-08-24
申请号：US10548347
申请日：2004-02-21
申请人： Takeo Okabe , Shuichi Irumata , Yasuhiro Yamakoshi , Hirohito Miyashita , Ryo Suzuki
发明人： Takeo Okabe , Shuichi Irumata , Yasuhiro Yamakoshi , Hirohito Miyashita , Ryo Suzuki
IPC分类号： H01L23/58 , H01L21/31 , H01L21/469
CPC分类号： H01L21/02181 , C22C27/00 , C23C14/3414 , H01L21/02266 , H01L21/31645 , Y10S148/158
摘要： Provided is a hafnium alloy target containing either or both of Zr and Ti in a gross amount of 100 wtppm-10 wt % in Hf, wherein the average crystal grain size is 1-100 μm, the impurities of Fe, Cr and Ni are respectively 1 wtppm or less, and the habit plane ratio of the plane {002} and three planes {103}, {014} and {015} lying within 350 from {002} is 55% or greater, and the variation in the total sum of the intensity ratios of these four planes depending on locations is 20% or less. As a result, obtained is a hafnium alloy target having favorable deposition property and deposition speed, which generates few particles, and which is suitable for forming a high dielectric gate insulation film such as HfO or HfON film, and the manufacturing method thereof.
摘要翻译：本发明提供一种铪合金靶，其含有Zr和Ti中的任一种或两者，其总量为100重量ppm-10重量％，其中平均晶粒尺寸为1-100微米，Fe，Cr和Ni的杂质分别为 1％以下，{002}的平面{002}和三面{103}，{014}和{015}的习惯平面比在55％以内，为55％以上，总和的变化这四个平面的强度比取决于位置的20％以下。结果，得到了具有良好的沉积性能和沉积速度的铪合金靶及其制造方法，该铪合金靶产生很少的颗粒，并且适合于形成诸如HfO或HfON膜的高介电栅极绝缘膜。

66. 发明申请

US20060099126A1 Sputtering target and process for producing the same 失效
标题翻译：溅射目标和生产方法
公开(公告)号：US20060099126A1
公开(公告)日：2006-05-11
申请号：US10547816
申请日：2004-02-03
申请人： Hideo Hosono , Kazushige Ueda , Masataka Yahagi , Hideo Takami
发明人： Hideo Hosono , Kazushige Ueda , Masataka Yahagi , Hideo Takami
IPC分类号： C01F17/00 , B22D7/00
CPC分类号： C04B35/645 , C04B35/547 , C04B2235/3227 , C04B2235/446 , C04B2235/5409 , C04B2235/5436 , C04B2235/72 , C04B2235/77 , C04B2235/786 , C23C14/3414 , Y10T428/12
摘要： A manufacturing method of a sputtering target having mainly oxychalcogenide containing La and Cu by sintering at least one or more powders selected from an elementary substance of a constituent element, oxide or chalcogenide as the raw material, characterized in including a reaction step of retaining the [material] at a temperature of 850° C. or less for 1 hour or more during the sintering step, wherein this [material], after the reaction step, is subject to pressure sintering at a temperature that is higher than the reaction step temperature. In addition to increasing the density of a P-type transparent conductive material target having mainly oxychalcogenide containing La and Cu and enabling the enlargement of the target at a low manufacturing cost, the existence of unreacted matter in the target can be eliminated, the production yield can be improved by suppressing the generation of cracks in the target, and the quality of deposition formed by sputtering this kind of target can also be improved.
摘要翻译：一种溅射靶的制造方法，其特征在于，具有通过烧结选自构成元素的基本物质，氧化物或硫族化物的至少一种以上的粉末作为原料的含有含有La和Cu的氧化硫元素的溅射靶，其特征在于，包括：材料]在烧结工序中在850℃以下的温度下保持1小时以上，其中在反应工序后，将该材料在比反应步骤温度高的温度进行加压烧结。除了增加含有含有La和Cu的含氧硫属元素的P型透明导电材料靶的密度以外，能够以低的制造成本扩大靶，除此之外，可以消除靶中未反应物的存在，生产率可以通过抑制靶中的裂纹的产生而得到改善，也可以提高通过溅射形成的沉积物的质量。

67. 发明申请

US20060071197A1 Electroconductive oxide sintered compact, sputtering target comprising the sintered compact and methods for producing them 有权
标题翻译：导电氧化物烧结体，包含该烧结体的溅射靶及其制造方法
公开(公告)号：US20060071197A1
公开(公告)日：2006-04-06
申请号：US10522263
申请日：2003-06-12
申请人： Ryo Suzuki
发明人： Ryo Suzuki
IPC分类号： H01B1/12
CPC分类号： C04B35/486 , C04B35/01 , C04B35/488 , C04B35/50 , C04B2235/3206 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3229 , C04B2235/3244 , C04B2235/3286 , C04B2235/77 , C04B2235/9607 , C23C14/3414
摘要： A SrRuO3 conductive oxide sintered body characterized in that the relative density is 93% or more. By improving the additive amount and sintering conditions of Bi2O3, the present invention seeks to improve the relative density of a SrRuO3 conductive oxide sintered body, and to provide a conductive oxide sintered body capable of suppressing the generation of particles during sputtering upon forming a thin film and improving the quality and production yield; a sputtering target formed from such sintered body; and the manufacturing method thereof.
摘要翻译： SrRuO 3导电氧化物烧结体，其特征在于相对密度为93％以上。通过改善Bi 2 O 3 N 3的添加量和烧结条件，本发明寻求提高SrRuO 3 N 3导电氧化物的相对密度并且提供一种导电氧化物烧结体，其能够在形成薄膜时在溅射期间抑制颗粒的产生，并且提高质量和产率; 由这种烧结体形成的溅射靶; 及其制造方法。

68. 发明申请

US20060057014A1 Iron silicide sputtering target and method for production thereof 有权
标题翻译：铁硅化物溅射靶及其制造方法
公开(公告)号：US20060057014A1
公开(公告)日：2006-03-16
申请号：US10527320
申请日：2003-09-01
申请人： Kunihiro Oda , Ryo Suzuki
发明人： Kunihiro Oda , Ryo Suzuki
IPC分类号： C01B33/06 , B22F1/02
CPC分类号： C04B35/64 , B22F2998/00 , B22F2998/10 , C04B35/58085 , C04B35/6261 , C04B35/62665 , C04B35/645 , C04B35/6455 , C04B2235/3891 , C04B2235/405 , C04B2235/428 , C04B2235/5436 , C04B2235/6581 , C04B2235/6582 , C04B2235/661 , C04B2235/666 , C04B2235/72 , C04B2235/721 , C04B2235/722 , C04B2235/723 , C04B2235/724 , C04B2235/726 , C04B2235/727 , C04B2235/77 , C04B2235/78 , C04B2235/786 , C23C14/3414 , B22F3/105 , B22F3/14 , B22F3/15 , B22F9/082 , B22F3/10
摘要： Provided is an iron silicide sputtering target in which the oxygen as the gas component in the target is 1000 ppm or less, and a manufacturing method of such iron silicide sputtering target including the steps of melting/casting high purity iron and silicon under high vacuum to prepare an alloy ingot, subjecting the ingot to gas atomization with inert gas to prepare fine powder, and thereafter sintering the fine powder. With this iron suicide sputtering target, the amount of impurities will be reduced, the thickness of the βFeSi2 film during deposition can be made thick, the generation of particles will be reduced, a uniform and homogenous film composition can be yielded, and the sputtering characteristics will be favorable. The foregoing manufacturing method is able to stably produce this target.
摘要翻译：提供了一种铁化硅溅射靶，其中作为靶中的气体成分的氧为1000ppm以下，以及这种铁硅化物溅射靶的制造方法，其包括在高真空下熔融/铸造高纯度铁和硅的步骤制备合金锭，使该锭用惰性气体进行气体雾化以制备细粉末，然后烧结该细粉末。通过这种铁硅化物溅射靶，杂质的量将减少，沉积期间的βFeSi2膜的厚度可以变厚，颗粒的产生将减少，均匀且均匀的膜组成可以得到良好的溅射特性。上述制造方法能够稳定地产生该目标。

69. 发明申请

US20050285273A1 Copper alloy sputtering target and semiconductor element wiring 有权
标题翻译：铜合金溅射靶和半导体元件布线
公开(公告)号：US20050285273A1
公开(公告)日：2005-12-29
申请号：US10530438
申请日：2003-10-16
申请人： Takeo Okabe , Hirohito Miyashita
发明人： Takeo Okabe , Hirohito Miyashita
IPC分类号： C22C9/01 , C22C9/02 , C23C14/18 , C23C14/34 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L21/44 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/2855 , C22C9/01 , C22C9/02 , C23C14/185 , C23C14/3414 , H01L21/76873 , H01L2924/0002 , H01L2924/00
摘要： Provided is a first copper alloy sputtering target comprising 0.5 to 4.0 wt % of Al and 0.5 wt ppm or less of Si; a second copper alloy sputtering target comprising 0.5 to 4.0 wt % of Sn and 0.5 wt ppm or less of Mn; the first or the second alloy sputtering target further comprising one or more selected from among Sb, Zr, Ti, Cr, Ag, Au, Cd, In and As in a total amount of 1.0 wt ppm or less; and a semiconductor element wiring formed by the use of the above target. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics.
摘要翻译：提供了含有0.5〜4.0重量％的Al和0.5重量ppm以下的Si的第一铜合金溅射靶，包含Sn：0.5〜4.0重量％，Mn：0.5重量ppm以下的第二铜合金溅射靶; 所述第一或第二合金溅射靶还包含选自Sb，Zr，Ti，Cr，Ag，Au，Cd，In和As中的一种或多种，总量为1.0重量ppm以下; 以及通过使用上述目标形成的半导体元件布线。上述铜合金溅射靶允许形成用于半导体元件的布线材料，特别是形成电解铜电镀期间稳定，均匀且没有凝结的种子层，并且显示出优异的溅射膜形成特性。

70. 发明授权

US06960391B2 Carrier-attached copper foil and printed board using the copper foil 失效
标题翻译：载体铜箔和使用铜箔的印刷电路板
公开(公告)号：US06960391B2
公开(公告)日：2005-11-01
申请号：US10432517
申请日：2002-08-08
申请人： Takashi Natsume , Fumiaki Akase
发明人： Takashi Natsume , Fumiaki Akase
IPC分类号： H05K1/09 , B32B15/08 , H05K1/16 , H05K3/00 , H05K3/02 , H05K3/46 , B32B15/04
CPC分类号： H05K3/4626 , H05K1/16 , H05K1/162 , H05K1/167 , H05K3/025 , H05K2201/0209 , H05K2201/0355 , H05K2201/0358 , H05K2203/0152 , Y10T428/12438 , Y10T428/12569 , Y10T428/24777 , Y10T428/24802 , Y10T428/31529 , Y10T428/31678
摘要： The present invention relates to a carrier-added copper foil and a print substrate using such copper foil characterized in comprising a resin layer and a functional material layer at least on a part of the copper foil. A carrier-added copper foil and a print substrate using such copper foil are obtained by forming an insulating layer and functional material layer having an area smaller than the area of the copper foil on the surface of the carrier-added copper foil with the screen printing method, thereby improving the handling of such copper foil, preventing the adhesion of contaminants such as resin powder on the copper foil surface during the cutting procedure, preventing scratches and dimples caused by foreign matter, and effectively preventing the generation of scratches, wrinkles and creases during the cutting, packaging and transportation procedures.
摘要翻译：本发明涉及使用这种铜箔的载体添加铜箔和印刷基板，其特征在于至少在铜箔的一部分上包括树脂层和功能材料层。使用这种铜箔的载体添加铜箔和印刷基板通过在载体添加铜箔的表面上通过丝网印刷形成绝缘层和具有小于铜箔的面积的功能材料层而获得方法，从而改善这种铜箔的处理，防止在切割过程中在铜箔表面上粘附诸如树脂粉末的污染物，防止由异物引起的划痕和凹痕，并且有效地防止产生划痕，褶皱和折痕在切割，包装和运输过程中。

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