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61. 发明授权

US07439182B2 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07439182B2
公开(公告)日：2008-10-21
申请号：US11483567
申请日：2006-07-11
申请人： Ji Ho Hong
发明人： Ji Ho Hong
IPC分类号： H01L21/302 , H01L23/48
CPC分类号： H01L21/76873 , H01L21/76877
摘要： A semiconductor and a method of fabricating the same are provided. The method includes: forming an insulation layer on a substrate; forming a trench by selectively etching the insulation layer; electroplating a copper layer in the trench and on the insulation layer under such conditions that a seam is formed at a top middle portion of the trench; and polishing the copper layer to form a copper metal line with the seam.
摘要翻译：提供半导体及其制造方法。该方法包括：在基板上形成绝缘层; 通过选择性地蚀刻绝缘层来形成沟槽; 在沟槽的顶部中间部分形成接缝的条件下，在沟槽和绝缘层上电镀铜层; 并抛光铜层以形成具有接缝的铜金属线。

62. 发明授权

US07439175B2 Method for fabricating a thin film and metal line of semiconductor device 有权
标题翻译：制造半导体器件的薄膜和金属线的方法
公开(公告)号：US07439175B2
公开(公告)日：2008-10-21
申请号：US11645533
申请日：2006-12-27
申请人： Han-Choon Lee
发明人： Han-Choon Lee
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/321 , H01L21/76843 , H01L21/76861
摘要： A method for forming a thin film of a semiconductor device is provided. The method includes forming a TaN film on a semiconductor substrate, and converting a portion of the TaN film into a Ta film by reacting the TaN film with NO2. The Ta film is formed to have a thickness which is about half of the thickness of the TaN film.
摘要翻译：提供一种形成半导体器件的薄膜的方法。该方法包括在半导体衬底上形成TaN膜，并通过TaN膜与NO 2反应将TaN膜的一部分转变成Ta膜。形成Ta膜的厚度大约为TaN膜厚度的一半。

63. 发明授权

US07435669B2 Method of fabricating transistor in semiconductor device 失效
标题翻译：在半导体器件中制造晶体管的方法
公开(公告)号：US07435669B2
公开(公告)日：2008-10-14
申请号：US11024678
申请日：2004-12-30
申请人： Dae Kyeun Kim
发明人： Dae Kyeun Kim
IPC分类号： H01L21/22
CPC分类号： H01L29/66598 , H01L29/665 , H01L29/6653 , H01L29/6656 , H01L29/7833 , Y10S438/923
摘要： A method of fabricating a transistor in a semiconductor device. A gate oxide layer and a gate are formed on a semiconductor substrate. An oxide layer and a silicon nitride layer are stacked on the substrate. The stacked oxide and silicon nitride layers are etched back to expose a surface of the substrate. The silicon nitride layer is removed to form a gate sidewall spacer. Impurity ions are implanted into the substrate through the exposed surface of the substrate.
摘要翻译：一种在半导体器件中制造晶体管的方法。在半导体衬底上形成栅氧化层和栅极。在基板上层叠氧化物层和氮化硅层。将层叠的氧化物和氮化硅层回蚀刻以暴露衬底的表面。去除氮化硅层以形成栅极侧壁间隔物。杂质离子通过衬底的暴露表面注入到衬底中。

64. 发明授权

US07435616B2 CMOS image sensor and method of fabricating the same 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07435616B2
公开(公告)日：2008-10-14
申请号：US11609990
申请日：2006-12-13
申请人： Yeong Sil Kim
发明人： Yeong Sil Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627
摘要： Provided is a method of fabricating a CMOS image sensor. According to an embodiment method, an insulating layer can be formed on a semiconductor substrate, and a metal pad can be formed on the insulating layer. A first overcoat layer can be formed on the insulating layer including the metal pad. The first overcoat layer can be selectively removed to expose a portion of the metal pad. A protective layer can be formed on the exposed metal pad and the first overcoat layer. A color filter array can be formed on the protective layer, and a second overcoat layer can be formed on the color filter array and the protective layer. The second overcoat layer can be selectively removed to remain on a photodiode region. A plasma treatment can then be performed on the remaining second overcoat layer before forming a microlens.
摘要翻译：提供了制造CMOS图像传感器的方法。根据实施方式，可以在半导体衬底上形成绝缘层，并且可以在绝缘层上形成金属焊盘。可以在包括金属垫的绝缘层上形成第一外涂层。可以选择性地去除第一外涂层以暴露金属垫的一部分。可以在暴露的金属垫和第一外涂层上形成保护层。可以在保护层上形成滤色器阵列，并且可以在滤色器阵列和保护层上形成第二覆盖层。可以选择性地除去第二外涂层以保留在光电二极管区域上。然后可以在形成微透镜之前对剩余的第二外涂层进行等离子体处理。

65. 发明授权

US07435615B2 Method for fabricating CMOS image sensor 失效
标题翻译： CMOS图像传感器的制造方法
公开(公告)号：US07435615B2
公开(公告)日：2008-10-14
申请号：US11184289
申请日：2005-07-18
申请人： Su Kon Kim
发明人： Su Kon Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14627
摘要： A method for fabricating a CMOS image sensor improves the characteristics of device by preventing a pad from being contaminated without damaging a micro-lens. The method includes steps of forming a device protection layer on a semiconductor substrate including at least one photo-sensing device and at least one metal pad disposed in a logic circuit area corresponding to the at least one photo-sensing device, the device protection layer covering the at least one metal pad; forming each of a first planarization layer, a color filter layer, and a second planarization layer in sequence on the device protection layer in correspondence with the at least one photo-sensing device; forming on the second planarization layer a material layer for micro-lens formation; exposing a predetermined portion of the metal pad by selectively etching the device protection layer; and forming a micro-lens for directing incident light onto the at least one photo-sensing device by reflowing, after the exposing step, the material layer for micro-lens formation.
摘要翻译：制造CMOS图像传感器的方法通过防止垫被污染而不损害微透镜来改善器件的特性。该方法包括以下步骤：在半导体衬底上形成器件保护层，该器件保护层包括至少一个感光器件和设置在与至少一个感光器件对应的逻辑电路区域中的至少一个金属焊盘，器件保护层覆盖所述至少一个金属垫; 在与所述至少一个感光装置对应的装置保护层上依次形成第一平坦化层，滤色器层和第二平坦化层中的每一个; 在第二平坦化层上形成用于微透镜形成的材料层; 通过选择性地蚀刻器件保护层来暴露金属焊盘的预定部分; 以及形成微透镜，用于通过在曝光步骤之后回流用于形成微透镜的材料层，将入射光引导到所述至少一个感光装置上。

66. 发明授权

US07432193B2 Method for fabricating a thin film and a metal line of a semiconductor device 有权
标题翻译：用于制造半导体器件的薄膜和金属线的方法
公开(公告)号：US07432193B2
公开(公告)日：2008-10-07
申请号：US11640916
申请日：2006-12-19
申请人： In-Cheol Baek , Han-Choon Lee
发明人： In-Cheol Baek , Han-Choon Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76861
摘要： A method for forming a thin film of a semiconductor device is provided. The method includes forming a TaN film on a semiconductor substrate by employing an atomic layer deposition method; and converting a part of the TaN film into a Ta by reacting the TaN film with NO2 to form a Ta film. The NO2 is formed by reacting NH3 with O2.
摘要翻译：提供一种形成半导体器件的薄膜的方法。该方法包括使用原子层沉积法在半导体衬底上形成TaN膜; 并通过使TaN膜与NO 2 2反应而将TaN膜的一部分转化成Ta，以形成Ta膜。 NO 2是通过使NH 3与O 2 2反应而形成的。

67. 发明授权

US07432190B2 Semiconductor device and manufacturing method thereof to prevent a notch 失效
标题翻译：半导体装置及其制造方法，以防止缺口
公开(公告)号：US07432190B2
公开(公告)日：2008-10-07
申请号：US11320890
申请日：2005-12-30
申请人： Min Dae Hong
发明人： Min Dae Hong
IPC分类号： H01L21/4763
CPC分类号： H01L21/76838 , H01L21/7684 , H01L23/53214 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device includes: preparing a substrate in which a first interlayer insulation layer having a first via hole and a first trench is formed; forming a first via plug and a first metal line by filling the first via hole and the first trench with a first metal; planarizing the first metal line and the first interlayer insulation layer; forming a second interlayer insulation layer on the first metal line and the first interlayer insulation layer; planarizing the second interlayer insulation layer; forming a second via hole and a second trench in the second interlayer insulation layer; forming a second via plug and a second metal line by filling the second via hole and the second trench with a second metal; and planarizing the second metal line and the second interlayer insulation layer.
摘要翻译：一种制造半导体器件的方法包括：制备其中形成具有第一通孔和第一沟槽的第一层间绝缘层的衬底; 通过用第一金属填充第一通孔和第一沟槽来形成第一通孔塞和第一金属线; 平面化第一金属线和第一层间绝缘层; 在所述第一金属线和所述第一层间绝缘层上形成第二层间绝缘层; 平面化第二层间绝缘层; 在所述第二层间绝缘层中形成第二通孔和第二沟槽; 通过用第二金属填充第二通孔和第二沟槽来形成第二通孔塞和第二金属线; 以及平面化所述第二金属线和所述第二层间绝缘层。

68. 发明授权

US07432182B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07432182B2
公开(公告)日：2008-10-07
申请号：US11186397
申请日：2005-07-21
申请人： Seok-Su Kim
发明人： Seok-Su Kim
IPC分类号： H01L21/3205
CPC分类号： H01L21/76879 , H01L21/28525 , H01L21/76802 , H01L21/76805 , H01L21/76895 , H01L21/823425
摘要： An exemplary method for manufacturing a semiconductor device includes: forming an insulating layer over a semiconductor substrate having a gate insulating layer, a gate, and a spacer, respectively formed thereabove and one or more junction regions formed therein so as to fill a full height of a gap between gates; forming a contact hole partially exposing the junction region(s) by etching the insulating layer; and selectively forming a silicon layer on an exposed portion of the junction region at a bottom of the contact hole.
摘要翻译：用于制造半导体器件的示例性方法包括：在分别形成在其上的具有栅极绝缘层，栅极和间隔物的半导体衬底上形成绝缘层，以及形成在其中的一个或多个结区域，以便填满全部高度门之间的差距通过蚀刻绝缘层形成部分地暴露接合区域的接触孔; 并且在接触孔的底部的接合区域的暴露部分上选择性地形成硅层。

69. 发明授权

US07427542B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07427542B2
公开(公告)日：2008-09-23
申请号：US11639212
申请日：2006-12-15
申请人： Yeo-Jo Yun
发明人： Yeo-Jo Yun
IPC分类号： H01L21/337 , H01L21/8238
CPC分类号： H01L21/8249 , H01L27/0623 , H01L29/66272
摘要： A method of manufacturing a semiconductor device including a complementary metal oxide semiconductor (CMOS) and a bipolar junction transistor (BJT), the method comprising the steps of: forming a gate oxide layer on a substrate having a p-type and an n-type well; removing the gate oxide layer on the p-type well; forming bases on the p-type well; forming a first photosensitive layer pattern that exposes the bases on the substrate; implanting p-type impurity ions into the bases through the first photosensitive layer pattern; removing the first photosensitive layer pattern; forming a second photosensitive layer pattern that exposes the p-type and the n-type wells; and implanting n-type impurity ions into the p-type and the n-type wells through the second photosensitive layer pattern to form an emitter and a collector, respectively, to form the BJT. Therefore, CMOS manufacturing processes are used to form a high frequency BJT having improved frequency and noise characteristics.
摘要翻译：一种制造包括互补金属氧化物半导体（CMOS）和双极结型晶体管（BJT）的半导体器件的方法，所述方法包括以下步骤：在具有p型和n型衬底的衬底上形成栅氧化层好; 去除p型阱上的栅极氧化物层; 在p型井上形成基底; 形成在基板上露出基底的第一感光层图案; 通过第一感光层图案将p型杂质离子注入基底; 去除第一感光层图案; 形成露出p型和n型阱的第二感光层图案; 并且通过第二感光层图案将n型杂质离子注入到p型和n型阱中，以分别形成发射极和集电极以形成BJT。因此，使用CMOS制造工艺来形成具有改进的频率和噪声特性的高频BJT。

70. 发明授权

US07426073B2 Digital micromirror device and manufacturing method thereof 有权
标题翻译：数字微镜装置及其制造方法
公开(公告)号：US07426073B2
公开(公告)日：2008-09-16
申请号：US11518079
申请日：2006-09-08
申请人： Yun Hyun Yoon
发明人： Yun Hyun Yoon
IPC分类号： G02B26/00 , G02B26/08 , G02B7/182
CPC分类号： G02B26/0841
摘要： Provided is a digital micromirror device (DMD). The DMD includes a first metal line, a second metal line, a third metal line, and a mirror. The first metal line is formed to have a predetermined line width and a predetermined thickness, and the second metal line is formed to have the same width and thickness as the first metal line. The third metal line is formed to have its own predetermined line width and predetermined thickness, and the mirror rotates according to a voltage applied to the first, second and third metal lines to reflect light incident thereto.
摘要翻译：提供了一种数字微镜器件（DMD）。 DMD包括第一金属线，第二金属线，第三金属线和反射镜。第一金属线形成为具有预定的线宽度和预定厚度，并且第二金属线形成为具有与第一金属线相同的宽度和厚度。第三金属线形成为具有其自己的预定线宽和预定厚度，并且反射镜根据施加到第一，第二和第三金属线的电压来旋转以反射入射到其上的光。

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