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51. 发明授权

US09685433B2 Capacitor device 有权
公开(公告)号：US09685433B2
公开(公告)日：2017-06-20
申请号：US14495368
申请日：2014-09-24
申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
发明人： Chao-Chieh Li
IPC分类号： H01L27/06 , H01L49/02 , H01L23/522 , H01L27/08 , H01L29/93 , H01L29/94
CPC分类号： H01L27/0629 , H01L23/5223 , H01L27/0805 , H01L28/86 , H01L29/93 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： In some embodiments, a capacitor device includes a metal-oxide-metal (MOM) capacitor array and a varactor array configured overlapping with the MOM capacitor array. The MOM capacitor array includes a first MOM capacitor unit. The first MOM capacitor unit includes a first electrode pattern and a second electrode pattern in a first metallization layer. The first electrode pattern includes a plurality of first fingers and a first bus interconnecting the plurality of first fingers. The second electrode pattern includes a plurality of second fingers and a second bus interconnecting the plurality of second fingers. The varactor array includes a first varactor unit. The first varactor unit includes a first electrode contacting region and a second electrode contacting region. The first electrode pattern contacts the first electrode contacting region. The second electrode pattern contacts the second electrode contacting region.

52. 发明授权

US09666729B2 Nano structured paraelectric or superparaelectric varactors for agile electronic systems 有权
公开(公告)号：US09666729B2
公开(公告)日：2017-05-30
申请号：US14490777
申请日：2014-09-19
申请人： U.S. Army Research Laboratory ATTN: RDRL-LOC-I
发明人： Ryan C. Toonen , Mathew P. Ivill , Melanie W. Cole
IPC分类号： H01L29/06 , H01L29/93 , H01L29/66
CPC分类号： H01L29/93 , B82Y10/00 , H01L29/0653 , H01L29/0676 , H01L29/66174
摘要： An electronic device in the form a two-dimensional array of nanopillars extending generally normal to a substrate is provided. The nanopillars are made from a paraelectric or superparaelectric material. In addition, a linear dielectric medium is located between individual nanopillars. A two-dimensional array of paraelectric or superparaelectric nanopillars and a linear dielectric medium form the effective dielectric medium of a paraelectric or superparaelectric varactor. In some instances, the nanopillars are cylindrical nanopillars that have an average diameter and/or average height/length between 1-300 nanometers. In other instances, the nanopillars are quasi-nanoparticles that form self-aligned nano-junctions. In addition, each of the nanopillars has a single paraelectric or superparaelectric dipole domain therewithin. As such, each of the nanopillars can be void of crystallographic defects, polycrystallinity, interactions between ferroic domains, and defects due to ferroic domain walls.

53. 发明授权

US09660110B2 Varactor device with backside contact 有权
公开(公告)号：US09660110B2
公开(公告)日：2017-05-23
申请号：US14498359
申请日：2014-09-26
申请人： QUALCOMM Incorporated
发明人： Daeik Daniel Kim , Jonghae Kim , Chengjie Zuo , Sang-June Park , Changhan Hobie Yun , Mario Francisco Velez , David Francis Berdy , Matthew Michael Nowak , Robert Paul Mikulka
IPC分类号： H01L29/93 , H01L29/94 , H01L27/06
CPC分类号： H01L29/93 , H01L27/0629 , H01L29/94
摘要： An apparatus includes a varactor having a first contact that is located on a first side of a substrate. The varactor includes a second contact that is located on a second side of the substrate, and the second side is opposite the first side. The apparatus further includes a signal path between the first contact and the second contact.

54. 发明授权

US09611141B2 Self-removal anti-stiction coating for bonding process 有权
公开(公告)号：US09611141B2
公开(公告)日：2017-04-04
申请号：US14564346
申请日：2014-12-09
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Ping-Yin Liu , Li-Cheng Chu , Hung-Hua Lin , Shang-Ying Tsai , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
IPC分类号： H01L29/93 , B81C1/00 , B32B7/12 , B32B15/04 , B32B15/20 , B81B3/00
CPC分类号： B81C1/00269 , B32B7/12 , B32B15/043 , B32B15/20 , B32B2255/24 , B32B2307/746 , B32B2457/00 , B81B3/0005 , B81C2201/112 , Y10T428/12674 , Y10T428/12708 , Y10T428/12736 , Y10T428/12986
摘要： The present disclosure provides a device having a doped active region disposed in a substrate. The doped active region having an elongate shape and extends in a first direction. The device also includes a plurality of first metal gates disposed over the active region such that the first metal gates each extend in a second direction different from the first direction. The plurality of first metal gates includes an outer-most first metal gate having a greater dimension measured in the second direction than the rest of the first metal gates. The device further includes a plurality of second metal gates disposed over the substrate but not over the doped active region. The second metal gates contain different materials than the first metal gates. The second metal gates each extend in the second direction and form a plurality of respective N/P boundaries with the first metal gates.

55. 发明授权

US09472689B1 Varactor with integrated micro-discharge source 有权
标题翻译：具有集成微放电源的变容二极管
公开(公告)号：US09472689B1
公开(公告)日：2016-10-18
申请号：US14843060
申请日：2015-09-02
申请人： Sandia Corporation
发明人： Juan M. Elizondo-Decanini , Ronald P. Manginell , Matthew W. Moorman
IPC分类号： H01L29/93 , H01L29/66 , H01L29/20 , H01L29/16 , H01L29/06 , H01L27/08
CPC分类号： H01L29/93 , H01L27/0808 , H01L29/0657 , H01L29/1608 , H01L29/2003 , H01L29/66174
摘要： An apparatus that includes a varactor element and an integrated micro-discharge source is disclosed herein. In a general embodiment, the apparatus includes at least one np junction and at least one voltage source that is configured to apply voltage across the np junction. The apparatus further includes an aperture that extends through the np junction. When the voltage is applied across the np junction, gas in the aperture is ionized, forming a plasma, in turn causing a micro-discharge (of light, charge particles, and space charge) to occur. The light (charge particles, and space charge) impinges upon the surface of the np junction exposed in the aperture, thereby altering capacitance of the np junction. When used within an oscillator circuit, the effect of the plasma on the np-junction extends the capacitance changes of the np-junction and extends the oscillator frequency range in ways not possible by a conventional voltage controlled oscillator (VCO).
摘要翻译：本文公开了一种包括变容二极管元件和集成微放电源的装置。在一般实施例中，该装置包括至少一个np结和至少一个电压源，其被配置为跨越np结施加电压。该装置还包括延伸通过np结的孔。当电压施加在np结上时，孔中的气体被电离，形成等离子体，从而导致发生微量放电（光，电荷粒子和空间电荷）。光（电荷粒子和空间电荷）撞击暴露在孔中的np结的表面，从而改变np结的电容。当在振荡器电路内使用时，等离子体对np结的影响延长了np结的电容变化，并以常规压控振荡器（VCO）无法延伸的振荡器频率范围。

56. 发明授权

US09455357B2 Compound varactor 有权
公开(公告)号：US09455357B2
公开(公告)日：2016-09-27
申请号：US14485532
申请日：2014-09-12
申请人： TriQuint Semiconductor, Inc.
发明人： Peter V. Wright
IPC分类号： H01L29/93 , H01L29/66 , H01L29/861 , H01L27/08
摘要： Embodiments include apparatuses and methods related to a compound varactor. A first varactor in the compound varactor may include a collector layer and a first base layer that is arranged in a first plurality of parallel fingers. A second varactor in the compound varactor may include a second base layer arranged in a second plurality of parallel fingers, and the base layer may be coupled with the collector layer. In embodiments, the fingers of the base layers of the first varactor and the second varactor may be interleaved with one another. Other embodiments may be disclosed or claimed herein.

57. 发明授权

US09443842B2 Integrated circuit device 有权
标题翻译：集成电路器件
公开(公告)号：US09443842B2
公开(公告)日：2016-09-13
申请号：US14926851
申请日：2015-10-29
申请人： VIA TECHNOLOGIES, INC.
发明人： Sheng-Yuan Lee , Yin-Ku Chang
IPC分类号： H01L27/02 , H01L27/07 , H01L49/02 , H01L23/528 , H01L27/06 , H01L29/93 , H01L29/94 , H01L23/522 , H01L27/08
CPC分类号： H01L27/0288 , H01L23/5223 , H01L23/5225 , H01L23/5227 , H01L23/528 , H01L23/5283 , H01L27/0641 , H01L27/0788 , H01L27/0805 , H01L28/10 , H01L28/40 , H01L28/60 , H01L29/93 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： The invention provides an integrated circuit device. The integrated circuit device includes a substrate. A first capacitor is disposed on the substrate. A first metal pattern is coupled to a first electrode of the first capacitor. A second metal pattern is coupled to a first electrode of the second capacitor. A third metal pattern is disposed over the first and second metal patterns. The third metal pattern covers the first capacitor, the first metal pattern, and the second metal pattern. The third metal pattern is electrically grounded. An inductor is disposed over the third metal pattern.
摘要翻译：本发明提供一种集成电路装置。集成电路装置包括基板。第一电容器设置在基板上。第一金属图案耦合到第一电容器的第一电极。第二金属图案耦合到第二电容器的第一电极。第三金属图案设置在第一和第二金属图案之上。第三金属图案覆盖第一电容器，第一金属图案和第二金属图案。第三金属图案电接地。电感器设置在第三金属图案之上。

58. 发明申请

US20160218169A1 INTEGRATED INDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：集成电感器结构及其制造方法
公开(公告)号：US20160218169A1
公开(公告)日：2016-07-28
申请号：US14716898
申请日：2015-05-20
申请人： Realtek Semiconductor Corporation
发明人： Hsiao-Tsung YEN , Chia-Jui LIANG
IPC分类号： H01L49/02 , H01L23/58 , H01L27/06 , H01L29/66 , H01L29/94 , H01L29/93 , H01L23/528
CPC分类号： H01L28/10 , H01L23/5223 , H01L23/5225 , H01L23/5227 , H01L23/585 , H01L27/016 , H01L27/0682 , H01L28/20 , H01L28/40 , H01L28/60 , H01L29/93 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： An integrated inductor structure includes a capacitor, a guard ring, a patterned shield, and an inductor. The guard ring is coupled to the capacitor. The patterned shield is coupled to the guard ring through the capacitor, such that the patterned shield is floating. The inductor is disposed above the guard ring and the patterned shield.
摘要翻译：集成电感器结构包括电容器，保护环，图案化屏蔽和电感器。保护环耦合到电容器。图案化屏蔽通过电容器耦合到保护环，使得图案化屏蔽件浮动。电感器设置在保护环和图案化屏蔽上方。

59. 发明申请

US20160204282A1 Multi-Gate and Complementary Varactors in FinFET Process 审中-公开
标题翻译： FinFET工艺中的多栅极和互补变容二极管
公开(公告)号：US20160204282A1
公开(公告)日：2016-07-14
申请号：US15074025
申请日：2016-03-18
申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
发明人： Chi-Hsien Lin , Ying-Ta Lu , Hsien-Yuan Liao , Ho-Hsiang Chen , Chewn-Pu Jou , Fu-Lung Hsueh
IPC分类号： H01L29/93 , H01L27/092
CPC分类号： H01L29/93 , H01L27/0808 , H01L27/0886 , H01L27/0924
摘要： A varactor includes at least one semiconductor fin, a first gate, and a second gate physically disconnected from the first gate. The first gate and the second gate form a first FinFET and a second FinFET, respectively, with the at least one semiconductor fin. The source and drain regions of the first FinFET and the second FinFET are interconnected to form the varactor.
摘要翻译：变容二极管包括至少一个半导体鳍，第一栅极和物理上与第一栅极断开的第二栅极。第一栅极和第二栅极分别与至少一个半导体鳍形成第一FinFET和第二FinFET。第一FinFET和第二FinFET的源极和漏极区域互连以形成变容二极管。

60. 发明授权

US09391214B2 Varactor structure 有权
标题翻译：变形结构
公开(公告)号：US09391214B2
公开(公告)日：2016-07-12
申请号：US14635018
申请日：2015-03-02
申请人： NXP B.V.
发明人： Olivier Tesson , Mathieu Perin , Laure Rolland du Roscoat
IPC分类号： H01L29/93 , H03B5/12 , H01L29/66 , H01L27/08 , H01L29/94 , H01L29/423 , H01L23/482
CPC分类号： H01L29/93 , H01L23/4824 , H01L27/0808 , H01L27/0811 , H01L29/423 , H01L29/66174 , H01L29/94 , H01L2924/0002 , H03B5/124 , H03B5/1243 , H01L2924/00
摘要： A MOS varactor structure comprising a semiconductor body having a well region and a plurality of gate electrodes and a plurality of cathode electrodes arranged over the well region, wherein the gate electrodes comprise elongate pads, and the plurality of cathode contacts are connected by a cathode connection pattern, the cathode connection pattern comprising a plurality of arms, each of the plurality of arms arranged to extend over a part of a respective gate electrode pad.
摘要翻译：一种MOS变容二极管结构，包括具有阱区和多个栅电极的半导体本体和布置在阱区上的多个阴极，其中栅电极包括细长焊盘，并且多个阴极触点通过阴极连接阴极连接图案包括多个臂，所述多个臂中的每一个布置成在相应的栅电极焊盘的一部分上延伸。

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