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    • 51. 发明申请
    • Low-noise amplifying circuit
    • 低噪声放大电路
    • US20050068106A1
    • 2005-03-31
    • US10482651
    • 2002-06-19
    • Robert-Grant Irvine
    • Robert-Grant Irvine
    • H03F1/26H03F3/19H03F3/45
    • H03F3/45188H03F2200/294H03F2200/372H03F2203/45386H03F2203/45394H03F2203/45396H03F2203/45616H03F2203/7236
    • A low-noise amplifier circuit is specified which has a switchable gain ratio. For this purpose, a parallel circuit comprising a first and a second current path (3, 4) is provided between a radio-frequency signal input and output (1, 2), with the first current path (3) having a transistor which is connected in a common-base circuit for signal amplification, and the second current path (4) having a transistor which is connected in a common-emitter circuit (7) for signal amplification, and has input impedance matching (25, 27). Owing to the good noise characteristics and the good linearity characteristics, the described low-noise amplifier circuit is suitable for use in radio-frequency receivers in which adaptive pre-amplification is required even before a frequency converter, that is to say at the radio-frequency level, because the input signal has a wide dynamic range, such as that in the case of UMTS.
    • 指定了具有可切换增益比的低噪声放大器电路。 为此,在射频信号输入和输出(1,2)之间提供包括第一和第二电流路径(3,4)的并联电路,其中第一电流路径(3)具有晶体管,其是 连接在用于信号放大的公共基极电路中,并且第二电流路径(4)具有连接在用于信号放大的共射极电路(7)中并具有输入阻抗匹配(25,27)的晶体管。 由于具有良好的噪声特性和良好的线性特性,所以所述的低噪声放大器电路适用于即使在频率转换器之前也需要自适应预放大的射频接收机,也就是说, 频率电平,因为输入信号具有宽的动态范围,例如在UMTS的情况下。
    • 53. 发明授权
    • Transconductor tuning circuit
    • 跨导调谐电路
    • US06806776B2
    • 2004-10-19
    • US10373837
    • 2003-02-27
    • Jeong-won LeeGea-ok ChoJung-eun Lee
    • Jeong-won LeeGea-ok ChoJung-eun Lee
    • H03F304
    • H03F3/343H03F3/191H03F3/45179H03F2203/45394H03F2203/45622H03F2203/45682
    • A transconductor tuning circuit for controlling transconductance of a transconductor. The tuning circuit includes a first MOS (Metal-Oxide Semiconductor) transistor. A source terminal of the first MOS transistor is connected to a power source. A gate terminal and a drain terminal of the first MOS transistor being connected to each other. A gate terminal and a drain terminal of a second MOS transistor being connected. A first input terminal of a first error amplifier is connected to the gate terminal of the first MOS transistor. A second input terminal of the first error amplifier is connected to the gate terminal of the second MOS transistor. The first error amplifier outputs an output signal in form of a bias signal for controlling tuning of the transconductor.
    • 用于控制跨导体的跨导的跨导体调谐电路。 调谐电路包括第一MOS(金属氧化物半导体)晶体管。 第一MOS晶体管的源极端子连接到电源。 第一MOS晶体管的栅极端子和漏极端子彼此连接。 连接第二MOS晶体管的栅极端子和漏极端子。 第一误差放大器的第一输入端子连接到第一MOS晶体管的栅极端子。 第一误差放大器的第二输入端子连接到第二MOS晶体管的栅极端子。 第一误差放大器以偏置信号的形式输出输出信号,以控制跨导体的调谐。
    • 54. 发明申请
    • Device for converting a differential signal to a single signal
    • 用于将差分信号转换为单个信号的装置
    • US20030231063A1
    • 2003-12-18
    • US10463010
    • 2003-06-17
    • STMICROELECTRONICS S.r.l.
    • Giovanni CaliRoberto PelleritiFelice Torrisi
    • H03F003/45
    • H03F3/45085H03F3/45089H03F2203/45296H03F2203/45392H03F2203/45394H03F2203/45702
    • A device converts a differential signal (Vin1, Vin2) to a single signal (Vout). The device includes at least one pair of transistors (Q1, Q2) having equal transconductance gain (gm) and arranged according a differential stage configuration. The transistors (Q1, Q2) have the differential signal (Vin1, Vin2) in input at the drivable terminals, have first non drivable terminals coupled respectively to first terminals of a first (R1) and a second (Rout) passive elements having second terminals connected with a first supply voltage (VDD), second non drivable terminals coupled to a second supply voltage (VEE) lower than the first supply voltage (VDD). The first terminal of the second passive element (Rout) is the output terminal (OUT) of the device. The last includes a transistor (Q3) having a first non drivable terminal connected with the output terminal (OUT) of the device, a second non drivable terminal coupled with the second supply voltage (VEE) and the drivable terminal connected with the first terminal of the first passive element (R1). The further transistor (Q3) has such a transconductance gain (gm3) that the product of the transconductance gain (gm3) by the first passive element (R1) is unitary.
    • 器件将差分信号(Vin1,Vin2)转换为单个信号(Vout)。 该器件包括至少一对晶体管(Q1,Q2),其具有相等的跨导增益(gm),并根据差分级配置进行布置。 晶体管(Q1,Q2)在可驱动端子处输入的差分信号(Vin1,Vin2)具有分别耦合到第一(R1)和第二(Rout)无源元件的第一非驱动端子,第一端子具有第二端子 与第一电源电压(VDD)连接,第二不可驱动端子耦合到低于第一电源电压(VDD)的第二电源电压(VEE)。 第二无源元件(Rout)的第一个端子是器件的输出端(OUT)。 最后一个包括具有与该装置的输出端(OUT)连接的第一不可驱动端子的晶体管(Q3),与第二电源电压(VEE)耦合的第二不可驱动端子和与第一端子连接的可驱动端子 第一无源元件(R1)。 另外的晶体管(Q3)具有跨导增益(gm3),第一无源元件(R1)的跨导增益(gm3)乘积是一体的。
    • 55. 发明申请
    • Transconductor having structure of crossing pairs
    • 具有交叉对结构的跨导体
    • US20030169080A1
    • 2003-09-11
    • US10359252
    • 2003-02-06
    • SAMSUNG ELECTRONICS CO., LTD.
    • Jeong-Won LeeGea-Ok ChoJung-Eun Lee
    • H03D001/00H02M011/00
    • H03F3/45807H02M7/217H03F1/223H03F3/45286H03F2203/45394
    • A transconductor for generating a current corresponding to an input voltage. The transconductor has a crossing pairs structure. The transconductor comprises a first and a second MOS(Metal-Oxide Semiconductor) transistors mutually connected in series to a voltage source. A first bipolar transistor is connected to a current source. A collector terminal of the first bipolar terminal is connected to an output current terminal. An emitter terminal of the first bipolar terminal is connected to a gate terminal of the second MOS transistor. A second bipolar transistor is connected in series to the first bipolar transistor. A base terminal of the second bipolar transistor is connected to a node between the first MOS transistor and the second MOS transistor. A third MOS transistor is provided. A gate terminal of the third MOS transistor is connected to an input terminal for a signal from outside. A drain terminal of the third MOS transistor is connected to an emitter terminal of the second bipolar transistor.
    • 用于产生对应于输入电压的电流的跨导体。 跨导体具有交叉对结构。 跨导体包括与电压源串联连接的第一和第二MOS(金属氧化物半导体)晶体管。 第一双极晶体管连接到电流源。 第一双极型端子的集电极端子连接到输出电流端子。 第一双极型端子的发射极端子连接到第二MOS晶体管的栅极端子。 第二双极晶体管与第一双极晶体管串联连接。 第二双极晶体管的基极连接到第一MOS晶体管和第二MOS晶体管之间的节点。 提供第三MOS晶体管。 第三MOS晶体管的栅极端子连接到用于来自外部的信号的输入端子。 第三MOS晶体管的漏极端子连接到第二双极晶体管的发射极端子。
    • 57. 发明申请
    • Stable AGC transimpedance amplifier with expanded dynamic range
    • 稳定的AGC跨阻放大器具有扩展的动态范围
    • US20020101285A1
    • 2002-08-01
    • US09910660
    • 2001-07-20
    • Jeremy Gareth Chatwin
    • H03F003/45
    • H03F3/4508H03F2203/45394
    • Wide dynamic range and stability are achieved by adjusting a gain control resistance of an amplifier such that the pole ratio between the input and output is stable and by using a gain compensation technique to adjust output current. Adjustment of the gain is performed by determining a peak voltage between a gain stage and a dummy gain stage amplifier that does not amplify the input voltage. The peak voltage is compared to a gain control reference voltage and the comparison output is used to regulate both the variable gain and the gain compensation. The variable gain is performed using an FET variable resistor in a feed back loop of the amplifier. The gain compensation technique uses an FET variable resistor to adjust a voltage level of a driving transistor that adjusts an amount of current provided to an input of a current mirror. The mirrored current is then used to drain bias current from the amplifier.
    • 通过调节放大器的增益控制电阻,使得输入和输出之间的极比稳定,并通过使用增益补偿技术来调节输出电流,实现了宽动态范围和稳定性。 通过确定增益级和不放大输入电压的虚拟增益级放大器之间的峰值电压来执行增益的调整。 峰值电压与增益控制参考电压进行比较,比较输出用于调节可变增益和增益补偿。 可变增益使用放大器反馈回路中的FET可变电阻进行。 增益补偿技术使用FET可变电阻器来调节调节提供给电流镜的输入端的电流量的驱动晶体管的电压电平。 然后使用镜像电流来从放大器漏去偏置电流。
    • 60. 发明授权
    • Ultra linear high frequency transconductor structure
    • 超线性高频跨导体结构
    • US06346856B1
    • 2002-02-12
    • US09571822
    • 2000-05-16
    • Brent A. MyersRamkishore Ganti
    • Brent A. MyersRamkishore Ganti
    • H03F345
    • H03F3/45937H03F3/45511H03F2203/45356H03F2203/45394H03F2203/45404H03F2203/45418
    • A transconductor block including a Czarnul tuning network, transconductance resistors, an input voltage follower amplifier, a common mode circuit, PMOS transistors coupled in cascode configuration, an input current source, and high gain amplifiers that drive NMOS transistors at the output. The input voltage follower amplifier receives a differential input signal including a common mode voltage and applies the differential input signal to the Czarnul tuning network. The Czarnul tuning network includes series resistors and is coupled in parallel with the transconductance resistors. The common mode circuit receives the differential input signal and a reference common mode voltage and provides a bias voltage and a common mode feedback voltage. The common mode circuit asserts the common mode feedback voltage to the output PMOS transistors to establish a DC output current and to minimize drift of the common mode voltage of the transconductance block. Also, the bias voltage is level shifted from the common mode signal. The high gain amplifiers maintain the output of the Czarnul tuning network and transconductance resistors at the bias voltage. The high gain amplifiers are coupled to the input current sources and to the NMOS transistors in a negative feedback configuration. The high gain amplifiers drive the NMOS transistors to reflect an output current that corresponds to the input voltage signal.
    • 包括Czarnul调谐网络,跨导电阻器,输入电压跟随器放大器,共模电路,以共源共模配置耦合的PMOS晶体管,输入电流源和在输出端驱动NMOS晶体管的高增益放大器的跨导体块。 输入电压跟随器放大器接收包括共模电压的差分输入信号,并将差分输入信号施加到Czarnul调谐网络。 Czarnul调谐网络包括串联电阻,并与跨导电阻并联耦合。 共模电路接收差分输入信号和参考共模电压,并提供偏置电压和共模反馈电压。 共模电路将输出PMOS晶体管的共模反馈电压置为直流输出电流,并使跨导块的共模电压的漂移最小化。 此外,偏置电压从共模信号电平移位。 高增益放大器保持Czarnul调谐网络和跨导电阻在偏置电压下的输出。 高增益放大器以负反馈配置耦合到输入电流源和NMOS晶体管。 高增益放大器驱动NMOS晶体管以反映与输入电压信号对应的输出电流。