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51. 发明申请

US20070145391A1 Vertical type nitride semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：垂直型氮化物半导体发光器件及其制造方法
公开(公告)号：US20070145391A1
公开(公告)日：2007-06-28
申请号：US11585212
申请日：2006-10-24
申请人： Doo Go Baik , Bang Won Oh , Tae Jun Kim
发明人： Doo Go Baik , Bang Won Oh , Tae Jun Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/0033 , H01L33/32
摘要： A vertical nitride semiconductor light emitting device and a manufacturing method thereof are provided. In the device, an ohmic contact layer, a p-type nitride semiconductor layer, an active layer, an n-type nitride semiconductor layer and an n-electrode are sequentially formed on a conductive substrate. At least one of a surface of the p-type nitride semiconductor layer contacting the ohmic contact layer and a surface of the n-type nitride layer contacting the n-electrode has a high resistance area of damaged nitride single crystal in a substantially central portion thereof. The high resistance area has a Schottky junction with at least one of the ohmic contact layer and the n-electrode.
摘要翻译：提供了一种垂直氮化物半导体发光器件及其制造方法。在该器件中，在导电性基板上依次形成欧姆接触层，p型氮化物半导体层，有源层，n型氮化物半导体层和n电极。接触欧姆接触层的p型氮化物半导体层的表面和与n电极接触的n型氮化物层的表面中的至少一个在其基本中心部分具有高的受损氮化物单晶的电阻面积。高电阻区域具有与欧姆接触层和n电极中的至少一个的肖特基结。

52. 发明申请

US20070057279A1 Light-emitting element having PNPN-structure and light-emitting element array 有权
标题翻译：具有PNPN结构和发光元件阵列的发光元件
公开(公告)号：US20070057279A1
公开(公告)日：2007-03-15
申请号：US11600438
申请日：2006-11-16
申请人： Seiji Ohno
发明人： Seiji Ohno
IPC分类号： H01L31/111
CPC分类号： B41J2/45 , H01L27/15 , H01L33/0033
摘要： A light-emitting element including a light-emitting thyristor and a Schottky barrier diode is provided. A Schottky barrier diode is formed by contacting a metal terminal to a gate layer of a three-terminal light-emitting thyristor consisting of a PNPN-structure. A self-scanning light-emitting element array may be driven at 3.0V by using such a Schottky barrier diode as a coupling diode of a diode-coupled self-scanning light-emitting element array.
摘要翻译：提供了包括发光晶闸管和肖特基势垒二极管的发光元件。通过使金属端子与由PNPN结构构成的三端子发光晶闸管的栅极层接触来形成肖特基势垒二极管。通过使用这样的肖特基势垒二极管作为二极管耦合的自扫描发光元件阵列的耦合二极管，可以在3.0V下驱动自扫描发光元件阵列。

53. 发明授权

US06406930B2 Fabrication of visible light emitting device formed from wide band gap semiconductor doped with a rare earth element 失效
标题翻译：由掺杂有稀土元素的宽带隙半导体形成的可见光发射器件的制造
公开(公告)号：US06406930B2
公开(公告)日：2002-06-18
申请号：US09845446
申请日：2001-04-30
申请人： Ronald H. Birkhahn , Liang-Chiun Chao , Michael J. Garter , James D. Scofield , Andrew J. Steckl
发明人： Ronald H. Birkhahn , Liang-Chiun Chao , Michael J. Garter , James D. Scofield , Andrew J. Steckl
IPC分类号： H01L2100
CPC分类号： H01L33/343 , H01L33/0033 , H01L33/325 , H01S3/16 , H01S3/1628
摘要： A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.
摘要翻译：可见光发光器件包括掺杂有基于原子跃迁以各种波长发光的一种或多种元素的宽带隙半导体层。半导体优选为掺杂镧系元素如Er，Pr或Tm的GaN，InN，AlN，BN或其合金。可以通过退火WBGS来增强发光。

54. 发明授权

US06288415B1 Optoelectronic semiconductor devices 失效
标题翻译：光电半导体器件
公开(公告)号：US06288415B1
公开(公告)日：2001-09-11
申请号：US09297115
申请日：1999-09-24
申请人： Daniel Leong , Milton Anthony Harry , Kevin Homewood , Karen Joy Reeson Kirkby
发明人： Daniel Leong , Milton Anthony Harry , Kevin Homewood , Karen Joy Reeson Kirkby
IPC分类号： H01L3300
CPC分类号： H01L33/34 , H01L31/032 , H01L31/068 , H01L31/103 , H01L31/107 , H01L33/0008 , H01L33/0033 , Y02E10/547
摘要： An optoelectronic semiconductor device in the form of an LED comprises a silicon p-n junction having a photoactive region containing beta-iron disilicide (&bgr;-FeSi2). The LED produces electroluminescence at a wavelength of about 1.5 &mgr;m. Photodetector devices are also described
摘要翻译： LED形式的光电半导体器件包括具有含有β-铁二硅化物（β-FeSi 2）的光活性区的硅p-n结。 LED产生波长约1.5μm的电致发光。还将描述光检测器件

55. 发明授权

US06255669B1 Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element 有权
标题翻译：由掺杂有稀土元素的宽带隙半导体形成的可见发光器件
公开(公告)号：US06255669B1
公开(公告)日：2001-07-03
申请号：US09299186
申请日：1999-04-23
申请人： Ronald H. Birkhahn , Liang-Chiun Chao , Michael J. Garter , James D. Scofield , Andrew J. Steckl
发明人： Ronald H. Birkhahn , Liang-Chiun Chao , Michael J. Garter , James D. Scofield , Andrew J. Steckl
IPC分类号： H01L3300
CPC分类号： H01L33/343 , H01L33/0033 , H01L33/325 , H01S3/16 , H01S3/1628
摘要： A visible light emitting device includes a wide band gap semiconductor layer doped with one or more elements which emit light at various wavelengths based upon atomic transitions. The semiconductor preferably is GaN, InN, AIN, BN or alloys thereof doped with a lanthanide element such as Er, Pr or Tm. The light emission can be enhanced by annealing the WBGS.
摘要翻译：可见光发光器件包括掺杂有基于原子跃迁以各种波长发光的一种或多种元素的宽带隙半导体层。半导体优选为掺杂镧系元素如Er，Pr或Tm的GaN，InN，AlN，BN或其合金。可以通过退火WBGS来增强发光。

56. 发明授权

US5851904A Method of manufacturing microcrystalline layers and their utilization 失效
标题翻译：制造微晶层的方法及其应用
公开(公告)号：US5851904A
公开(公告)日：1998-12-22
申请号：US624403
申请日：1996-05-17
申请人： Reinhard Schwarz , Svetoslav Koynov , Thomas Fischer
发明人： Reinhard Schwarz , Svetoslav Koynov , Thomas Fischer
IPC分类号： H05B33/10 , C23C16/22 , C23C16/24 , C23C16/44 , C23C16/455 , C23C16/511 , C23C16/56 , C30B29/06 , H01L21/20 , H01L21/205 , H01L31/04 , H01L31/18 , H01L33/00 , H01L33/18 , H01L33/34 , H01L21/36 , C30B00/00
CPC分类号： H01L33/34 , C23C16/22 , C23C16/24 , C23C16/44 , C23C16/45557 , C23C16/56 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L31/1816 , H01L31/1824 , H01L31/186 , H01L33/0033 , H01L33/0037 , H01L33/0058 , H01L33/0095 , H01L33/18 , H01L2924/0002 , Y02E10/545 , Y02P70/521
摘要： The invention relates to a method of manufacturing microcrystalline layers from elements of the principal group IV, particularly Si, Ge, Sn or their alloys such as SiC or SiGe by means of cyclic CVD or related methods, a cycle comprising two steps. a first step for producing an amorphous layer of the element in such a way that compounds and hydrogen are passed under conventional CVD conditions through separate access means into the reactor over the substrate, and in that in a second step, a hydrogen treatment takes place, the supply of the process gas flow, the hydrogen flow and the connection of the CVD reactor to the pump being closed at least intermittently during the second step, so that the hydrogen treatment takes place in a closed CVD process (CC-CVD process) with the quantity of hydrogen or element hydrogen compounds located in the reactor.
摘要翻译： PCT No.PCT / DE94 / 01158 Sec。 371日期1996年5月17日 102（e）日期1996年5月17日PCT 1994年9月29日PCT公布。出版物WO95 / 09435 日期1995年4月6日本发明涉及通过循环CVD或相关方法从主要组IV的元素，特别是Si，Ge，Sn或它们的合金如SiC或SiGe的元素制造微晶层的方法，包括两个脚步。制造元件的非晶层的第一步骤是使化合物和氢气在常规CVD条件下通过单独的进入装置通过衬底上的反应器，并且在第二步骤中进行氢处理，在第二步骤期间至少间歇地关闭工艺气体流，氢气流和CVD反应器与泵的连接的供应，使得氢气处理在封闭的CVD工艺（CC-CVD工艺）中进行，其中具有位于反应器中的氢或元素氢化合物的量。

57. 发明授权

US5541423A Monocrystalline diamond semiconductor device and several electronic components employing same 失效
标题翻译：单晶金刚石半导体器件和几个使用其的电子元器件
公开(公告)号：US5541423A
公开(公告)日：1996-07-30
申请号：US278104
申请日：1994-07-20
申请人： Keiji Hirabayashi
发明人： Keiji Hirabayashi
IPC分类号： H01L21/205 , H01L29/16 , H01L29/167 , H01L33/00 , H01L33/34 , H01L31/0312 , H01L29/22 , H01L27/155
CPC分类号： H01L33/343 , H01L21/02381 , H01L21/0242 , H01L21/02422 , H01L21/02527 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02595 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L29/1602 , H01L29/167 , H01L33/0033 , H01L33/0054
摘要： A diamond semiconductor device has a pn junction formed by a p-type diamond semiconductor portion containing boron as an impurity and an n-type diamond semiconductor portion containing lithium as an impurity. The diamond semiconductor is formed by a diamond crystal growth on a single nucleation site on an insulating substrate. Electroluminescene takes place in the diamond crystal.
摘要翻译：金刚石半导体器件具有由含有硼作为杂质的p型金刚石半导体部分和含有锂作为杂质的n型金刚石半导体部分形成的pn结。金刚石半导体通过在绝缘基板上的单个成核位置上的金刚石晶体生长形成。电致发光元件在金刚石晶体中发生。

58. 发明授权

US5151383A Method for producing high energy electroluminescent devices 失效
标题翻译：高能电致发光器件的制造方法
公开(公告)号：US5151383A
公开(公告)日：1992-09-29
申请号：US307154
申请日：1989-02-06
申请人： Bernard S. Meyerson , Bruce A. Scott , Donald J. Wolford, Jr.
发明人： Bernard S. Meyerson , Bruce A. Scott , Donald J. Wolford, Jr.
IPC分类号： C23C16/24 , C23C16/46 , H01L33/00 , H01L33/18
CPC分类号： H01L33/18 , C23C16/24 , C23C16/46 , C23C16/463 , H01L33/0012 , H01L33/0033 , H01L33/0058
摘要： A method is described for fabricating electroluminescent devices exhibiting visible electroluminescence at room temperature, where the devices include at least one doped layer of amorphous hydrogenated silicon (a-Si:H). The a-Si:H layer is deposited on a substrate by homogeneous chemical vapor deposition (H-CVD) in which the substrate is held at a temperature lower than about 200.degree. C. and the a-Si:H layer is doped in-situ during deposition, the amount of hydrogen incorporated in the deposited layer being 12-50 atomic percent. The bandgap of the a-Si:H layer is between 1.6 and 2.6 eV, and in preferrable embodiments is between 2.0 and 2.6 eV. The conductivity of the a-Si:H layer is chosen in accordance with device requirements, and can be 10.sup.16 -10.sup.19 carriers/cm.sup.2. The bandgap of the a-Si:H layer depends at least in part on the temperature of the substrate on which the layer is deposited, and can be "tuned" by changing the substrate temperature.
摘要翻译：描述了一种用于制造在室温下显示可见电致发光的电致发光器件的方法，其中器件包括至少一个非晶氢化硅掺杂层（a-Si：H）。通过均匀化学气相沉积（H-CVD）将a-Si：H层沉积在衬底上，其中衬底保持在低于约200℃的温度，并且a-Si：H层被掺杂在在沉积期间原位，沉积层中掺入的氢的量为12-50原子％。 a-Si：H层的带隙在1.6和2.6eV之间，优选的实施方案是在2.0和2.6eV之间。 a-Si：H层的电导率根据器件要求选择，可以为1016-1019载体/ cm2。 a-Si：H层的带隙至少部分取决于沉积该层的衬底的温度，并且可以通过改变衬底温度“调谐”。

59. 发明授权

US4893154A Electroluminescent device 失效
标题翻译：电致发光器件
公开(公告)号：US4893154A
公开(公告)日：1990-01-09
申请号：US309023
申请日：1989-02-08
申请人： Yutaka Hirai , Masafumi Sano , Hisanori Tsuda , Katsuji Takasu
发明人： Yutaka Hirai , Masafumi Sano , Hisanori Tsuda , Katsuji Takasu
IPC分类号： H01L33/06 , H01L33/16 , H01L33/34 , H01L33/42
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0033
摘要： An electroluminescent device, which emits light by recombination of the carriers injected or excited by light of energy of electrical field, comprising an active layer which includes a semiconductor layer of a super-lattice structure. The layer in the super-lattice structure is changed in effective band gap by an electrical field externally applied to vary the emitted light wavelength. The semiconductor layer of said super-lattice structure comprising an non-single crystalline semiconductor material.
摘要翻译：一种电致发光器件，其通过由电场能量的光注入或激发的载流子的复合而发光，该有源层包括超晶格结构的半导体层。超晶格结构中的层通过外部施加的电场改变有效带隙，以改变发射的光波长。所述超晶格结构的半导体层包括非单晶半导体材料。

60. 发明授权

US3786315A Electroluminescent device 失效
标题翻译：电致发光器件
公开(公告)号：US3786315A
公开(公告)日：1974-01-15
申请号：US3786315D
申请日：1972-04-03
申请人： INTEL CORP
发明人： MEAD C , MCCALDIN J
IPC分类号： H01L21/441 , H01L33/00 , H01L33/02 , H01L33/28 , H01L3/00 , H05B33/00
CPC分类号： H01L33/28 , H01L21/441 , H01L33/00 , H01L33/0033 , H01L33/025
摘要： A direct current electroluminescent device for room temperature generation of blue and green light at low voltages and power levels, comprising a body of n-type zinc sulfide of low resistivity and high luminescent efficiency containing a first surface region treated to form an ohmic electron injection contact and a second region treated to contain within a thin layer of below 1 micron at least 1017 cm 3 of a Group I metal hole injection states which have an energy level intermediate the valence band of zinc sulfide and the Fermi level of a metal contact electrode and states which generate under bias a net negative charge within the layer. An electronegative metal electrode is applied to the layer and a relatively electropositive metal electrode is applied by to the first surface region. When a forward bias is applied to the device, electrons are injected into the first region and the net negative charge generated in the layer raises the energy of the hole injection states toward the metal Fermi level to permit hole injection. The injected holes and electrons combine at recombination centers in sufficient numbers at room temperature to emit radiation visible under ordinary illumination.
摘要翻译：一种用于在低电压和功率水平下产生蓝绿色光的室温直流电致发光器件，包括具有低电阻率和高发光效率的n型硫化锌体，其包含处理以形成欧姆电子注入接触的第一表面区域以及第二区域，被处理为在具有中等于硫化锌的价带和金属的费米能级的能级处于1微米以下的至少1017厘米3的I类金属空穴注入状态的薄层中接触电极和在该偏压下产生净负电荷的状态。

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