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51. 发明申请

US20110058062A1 SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SAME, AND CAMERA 有权
标题翻译：固态成像装置，其制造方法和相机
公开(公告)号：US20110058062A1
公开(公告)日：2011-03-10
申请号：US12945217
申请日：2010-11-12
申请人： Yasushi Maruyama , Tetsuji Yamaguchi , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
发明人： Yasushi Maruyama , Tetsuji Yamaguchi , Takashi Ando , Susumu Hiyama , Yuko Ohgishi
IPC分类号： H04N5/228 , H01L31/14
CPC分类号： H01L27/14609 , H01L27/1464 , H01L27/14643 , H01L27/14685 , H01L31/022466 , H01L31/022475
摘要： A solid-state imaging device includes a substrate having a first surface and a second surface, light being incident on the second surface side; a wiring layer disposed on the first surface side; a photodetector formed in the substrate and including a first region of a first conductivity type; a transfer gate disposed on the first surface of the substrate and adjacent to the photodetector, the transfer gate transferring a signal charge accumulated in the photodetector; and at least one control gate disposed on the first surface of the substrate and superposed on the photodetector, the control gate controlling the potential of the photodetector in the vicinity of the first surface.
摘要翻译：固态成像装置包括具有第一表面和第二表面的基板，入射到第二表面侧的光; 布置在所述第一表面侧上的布线层; 形成在所述基板中并且包括第一导电类型的第一区域的光电检测器; 设置在所述基板的所述第一表面上且与所述光电检测器相邻的传输栅极，所述传输栅极传送累积在所述光电检测器中的信号电荷; 以及至少一个控制栅极，其设置在所述基板的所述第一表面上并且重叠在所述光电检测器上，所述控制栅极控制所述光电检测器在所述第一表面附近的电位。

52. 发明申请

US20110039366A1 METHOD AND APPARATUS FOR DEPOSITION OF GRADED OR MULTI-LAYER TRANSPARENT FILMS 失效
标题翻译：沉积层或多层透明膜的方法和装置
公开(公告)号：US20110039366A1
公开(公告)日：2011-02-17
申请号：US12843778
申请日：2010-07-26
申请人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
发明人： Bulent M. Basol , Mustafa Pinarbasi , James Freitag
IPC分类号： H01L31/18 , H01L31/0264
CPC分类号： H01L31/206 , C23C18/12 , C23C18/1204 , C23C18/125 , H01L31/022475 , H01L31/022483 , H01L31/0322 , H01L31/0749 , H01L31/1884 , Y02E10/541 , Y02P70/521
摘要： In one embodiment, a continuous electroless deposition method and a system to form a solar cell buffer layer with a varying composition through its thickness are provided. The composition of the buffer layer is varied by varying the composition of a chemical bath deposition solution applied onto an absorber surface on which the buffer layer with varying composition is formed. In one example, the buffer layer with varying composition includes a first section containing CdS, a second section containing CdZnS formed on top of the already deposited CdS, and a third section containing ZnS is formed on the second section All the process steps are applied in a roll-to-roll fashion. In another embodiment, a transparent conductive layer including a first transparent conductive film such as aluminum doped zinc oxide and a second transparent conductive film such as indium tin oxide is deposited over the buffer layer with the varying composition.
摘要翻译：在一个实施例中，提供连续的无电沉积方法和通过其厚度形成具有变化的组成的太阳能电池缓冲层的系统。通过改变施加到其上形成有不同组成的缓冲层的吸收体表面上的化学浴沉积溶液的组成来改变缓冲层的组成。在一个实例中，具有不同成分的缓冲层包括含有CdS的第一部分，在已经沉积的CdS的顶部上形成的包含CdZnS的第二部分，在第二部分上形成包含ZnS的第三部分。所有的工艺步骤都应用于一对一的滚动时尚。在另一个实施例中，包含第一透明导电膜（例如掺杂铝的氧化锌）和第二透明导电膜（例如氧化铟锡）的透明导电层以不同的组成沉积在缓冲层上。

53. 发明申请

US20100040859A1 Nanostructured thin-film formed by utilizing oblique-angle deposition and method of the same 有权
标题翻译：利用斜角沉积形成的纳米结构薄膜及其方法
公开(公告)号：US20100040859A1
公开(公告)日：2010-02-18
申请号：US12289816
申请日：2008-11-05
申请人： Chia-Hua Chang , Chin-Sheng Yang , Ching-Hua Chiu , Pei-Chen Yu , Hao-Chung Kuo
发明人： Chia-Hua Chang , Chin-Sheng Yang , Ching-Hua Chiu , Pei-Chen Yu , Hao-Chung Kuo
IPC分类号： B32B3/26 , C23C14/30 , C23C14/34
CPC分类号： C23C14/226 , C23C14/086 , H01L31/022475 , H01L31/022483 , H01L31/1884 , Y02E10/50 , Y10T428/249953 , Y10T428/249978
摘要： The present invention discloses a transparent conductive nanostructured thin-film by oblique-angle deposition and method of the same. An electron beam system is utilized to evaporate the target source. Evaporation substrate is disposed on a plurality of adjustable sample stage. Multiple gas control valve and heat source is provided to control the gas flow and temperature within the process chamber. An annealing process is performed after the evaporation to improve the thin-film structure and optoelectronic properties.
摘要翻译：本发明公开了一种通过斜角沉积的透明导电纳米结构薄膜及其制造方法。利用电子束系统来蒸发目标源。蒸发衬底设置在多个可调节的样品台上。提供多个气体控制阀和热源来控制处理室内的气体流量和温度。在蒸发后进行退火处理以改善薄膜结构和光电子性能。

54. 发明申请

US20090127124A1 STRESS-INDUCED BANDGAP-SHIFTED SEMICONDUCTOR PHOTOELECTROLYTIC/PHOTOCATALYTIC/PHOTOVOLTAIC SURFACE AND METHOD FOR MAKING SAME 审中-公开
标题翻译：应力诱导带状发光半导体光电/光电/光伏表面及其制造方法
公开(公告)号：US20090127124A1
公开(公告)日：2009-05-21
申请号：US11773379
申请日：2007-07-03
申请人： John Michael Guerra
发明人： John Michael Guerra
IPC分类号： C25B1/04 , C25B9/00
CPC分类号： H01L31/0445 , C25B1/003 , C25B1/02 , C25B1/04 , C25B11/0405 , H01G9/20 , H01L31/022475 , H01L31/028 , H01L31/032 , H01L31/035281 , H01L31/03529 , H01L31/0376 , H01L31/0392 , Y02E10/50 , Y02E60/368 , Y02E70/10 , Y10S123/12
摘要： Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.0, to activate the photocatalytic property of titania requires light of about 390 nm wavelength, which is in the ultra-violet, where sunlight is very low in intensity. A method and devices are disclosed wherein stress is induced and managed in a thin film of titania in order to shift and lower the bandgap energy into the longer wavelengths that are more abundant in sunlight. Applications of this stress-induced bandgap-shifted titania photocatalytic surface include photoelectrolysis for production of hydrogen gas from water, photovoltaics for production of electricity, and photocatalysis for detoxification and disinfection.
摘要翻译：二氧化钛是化学惰性的半导体和光催化剂。由于其带隙为3.0，为了激活二氧化钛的光催化性能，需要大约390nm波长的光，其是太阳光强度非常低的紫外线。公开了一种方法和装置，其中以二氧化钛的薄膜诱导和管理应力，以便将带隙能量移动和降低到在阳光下更丰富的较长波长。这种应力诱导的带隙二氧化钛光催化表面的应用包括从水中生产氢气的光电解，用于生产电的光伏，以及用于解毒和消毒的光催化。

55. 发明申请

US20090101420A1 STRESS-INDUCED BANDGAP-SHIFTED SEMICONDUCTOR PHOTOELECTROLYTIC/PHOTOCATALYTIC/PHOTOVOLTAIC SURFACE AND METHOD FOR MAKING SAME 有权
公开(公告)号：US20090101420A1
公开(公告)日：2009-04-23
申请号：US12348250
申请日：2009-01-02
申请人： John Michael Guerra
发明人： John Michael Guerra
IPC分类号： B60K6/00 , F02B47/02
CPC分类号： H01L31/0445 , C25B1/003 , C25B1/02 , C25B1/04 , C25B11/0405 , H01G9/20 , H01L31/022475 , H01L31/028 , H01L31/032 , H01L31/035281 , H01L31/03529 , H01L31/0376 , H01L31/0392 , Y02E10/50 , Y02E60/368 , Y02E70/10 , Y10S123/12
摘要： Titania is a semiconductor and photocatalyst that is also chemically inert. With its bandgap of 3.0, to activate the photocatalytic property of titania requires light of about 390 nm wavelength, which is in the ultra-violet, where sunlight is very low in intensity. A method and devices are disclosed wherein stress is induced and managed in a thin film of titania in order to shift and lower the bandgap energy into the longer wavelengths that are more abundant in sunlight. Applications of this stress-induced bandgap-shifted titania photocatalytic surface include photoelectrolysis for production of hydrogen gas from water, photovoltaics for production of electricity, and photocatalysis for detoxification and disinfection.

56. 发明申请

US20090084438A1 Front electrode for use in photovoltaic device and method of making same 有权
标题翻译：用于光伏器件的前电极及其制造方法
公开(公告)号：US20090084438A1
公开(公告)日：2009-04-02
申请号：US12232619
申请日：2008-09-19
申请人： Willem den Boer , Yiwei Lu , David Broadway , Bryce Corsner
发明人： Willem den Boer , Yiwei Lu , David Broadway , Bryce Corsner
IPC分类号： H01L31/00
CPC分类号： H01L31/02168 , H01L31/022466 , H01L31/022475 , Y02E10/50
摘要： This invention relates to a front electrode/contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front electrode of a photovoltaic device or the like includes a multilayer coating including at least one transparent conductive oxide (TCO) layer (e.g., of or including a material such as tin oxide, ITO, zinc oxide, or the like) and/or at least one conductive substantially metallic IR reflecting layer (e.g., based on silver, gold, or the like). In certain example instances, the multilayer front electrode coating may include one or more conductive metal(s) oxide layer(s) and/or one or more conductive substantially metallic IR reflecting layer(s) in order to provide for reduced visible light reflection, increased conductivity, cheaper manufacturability, and/or increased infrared (IR) reflection capability.
摘要翻译：本发明涉及用于诸如光伏器件的电子设备中的前电极/触点。在某些示例性实施例中，光伏器件等的前电极包括多层涂层，其包括至少一个透明导电氧化物（TCO）层（例如，由氧化锡，ITO，氧化锌或类似）和/或至少一个导电的基本上金属的IR反射层（例如，基于银，金等）。在某些示例中，多层前电极涂层可以包括一个或多个导电金属氧化物层和/或一个或多个导电的基本上金属的IR反射层，以便提供减少的可见光反射，增加的电导率，更便宜的可制造性和/或增加的红外（IR）反射能力。

57. 发明申请

US20090022982A1 Electronic Device, Method of Manufacture of Same and Sputtering Target 审中-公开
标题翻译：电子设备及其制造方法及溅射靶
公开(公告)号：US20090022982A1
公开(公告)日：2009-01-22
申请号：US12223500
申请日：2007-02-21
申请人： Eugene Y. Ivanov , Timothy J. Wiemels
发明人： Eugene Y. Ivanov , Timothy J. Wiemels
IPC分类号： B32B15/00 , C23C14/34 , B32B5/00 , B23P17/00
CPC分类号： H01L31/1884 , C22C21/00 , C23C14/3414 , G02F2001/136295 , H01L31/022475 , H01L31/022483 , Y02E10/50 , Y10T29/49002 , Y10T428/265
摘要： An electronic device having a first electrode including a metal oxide and a second electrode including an aluminum alloy film and manufacturing technology therefor. The second electrode is directly contacted and electrically connected to the first electrode, wherein, in the contact interface between the aluminum alloy film and said first electrode, at least a part of alloy components constituting the aluminum alloy film exist as a precipitate extending across the contact interface to contact the metal oxide to the aluminum alloy film by the precipitate. This construction enables direct contact between the aluminum alloy film and the electrode consisting of a metallic oxide and allows for elimination of a barrier metal in such an electronic device.
摘要翻译：一种具有包括金属氧化物的第一电极和包括铝合金膜的第二电极的电子器件及其制造技术。第二电极直接接触并电连接到第一电极，其中在铝合金膜和所述第一电极之间的接触界面中，至少一部分构成铝合金薄膜的合金组分以沉淀物的形式存在，所述沉淀延伸穿过所述接触界面，通过沉淀物将金属氧化物与铝合金膜接触。这种结构使得铝合金膜和由金属氧化物组成的电极之间能够直接接触并且允许在这种电子器件中消除阻挡金属。

58. 发明申请

US20080236657A1 Novel Electrode 有权
标题翻译：新型电极
公开(公告)号：US20080236657A1
公开(公告)日：2008-10-02
申请号：US12061267
申请日：2008-04-02
申请人： Christoph Brabec , Jens Hauch , Russell Gaudiana , Andrea Welte , Jin-An He , Eitan C. Zeira
发明人： Christoph Brabec , Jens Hauch , Russell Gaudiana , Andrea Welte , Jin-An He , Eitan C. Zeira
IPC分类号： H01L31/0224 , H01L31/0264 , H01L31/04
CPC分类号： H01L31/022425 , B82Y10/00 , C08G2261/91 , H01B1/22 , H01L31/022466 , H01L31/022475 , H01L51/0003 , H01L51/0022 , H01L51/0036 , H01L51/0037 , H01L51/0043 , H01L51/0047 , H01L51/441 , H01L51/442 , H01L51/444 , H01L51/445 , Y02E10/549
摘要： Photovoltaic cells, as well as related systems, methods, modules, and components, are disclosed.
摘要翻译：公开了光伏电池以及相关系统，方法，模块和部件。

59. 发明申请

US20080169022A1 ELECTRODE SUBSTRATE AND PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
标题翻译：电极基板和光电转换元件
公开(公告)号：US20080169022A1
公开(公告)日：2008-07-17
申请号：US12024727
申请日：2008-02-01
申请人： Hiroshi MATSUI , Kenichi OKADA , Tetsuya EZURE , Nobuo TANABE
发明人： Hiroshi MATSUI , Kenichi OKADA , Tetsuya EZURE , Nobuo TANABE
IPC分类号： H01L31/0224
CPC分类号： H01L31/022425 , H01G9/2031 , H01G9/2068 , H01L31/022466 , H01L31/022475 , Y02E10/542
摘要： To provide an electrode substrate 1 that has a transparent conductive layer 11, a current-collecting metal layer 12 that is provided on the transparent conductive layer 11, and an insulating layer 14 that covers the current-collecting metal layer 12 on a base plate, wherein, when a thermal expansion coefficient of the base plate 10 is defined as α, and a thermal expansion coefficient of the insulating layer 14 is defined as β, α>β is satisfied, and in which the thickness of the transparent conductive layer 11 is 0.05 to 5 μm. The electrode substrate 1 can lower the resistance of the electrode substrate 1. Moreover, it is possible to provide an electrode substrate that can suppress degradation of the characteristics due to leak current from the metal wiring to the electrolyte solution and corrosion of the current-collecting metal layer and a photoelectric conversion element that is suitably used in a solar battery.
摘要翻译：为了提供具有透明导电层11的电极基板1，设置在透明导电层11上的集电金属层12和覆盖基板上的集电金属层12的绝缘层14，其中，当将基板10的热膨胀系数定义为α，并且将绝缘层14的热膨胀系数定义为β时，满足α>β，并且其中透明导电层11的厚度为 0.05〜5um。电极基板1可以降低电极基板1的电阻。此外，可以提供能够抑制由于从金属布线到电解液的漏电流引起的特性劣化的电极基板和集电体的集电金属层和适用于太阳能电池的光电转换元件。

60. 发明申请

US20080047602A1 Front contact with high-function TCO for use in photovoltaic device and method of making same 审中-公开
标题翻译：前置接触高功能TCO用于光伏器件及其制造方法
公开(公告)号：US20080047602A1
公开(公告)日：2008-02-28
申请号：US11507660
申请日：2006-08-22
申请人： Alexey Krasnov
发明人： Alexey Krasnov
IPC分类号： H01L31/00
CPC分类号： H01L31/022466 , H01L31/022475 , H01L31/022483
摘要： This invention relates to a front contact for use in an electronic device such as a photovoltaic device. In certain example embodiments, the front contact of the photovoltaic device includes a low work-function transparent conductive oxide (TCO) of a material such as tin oxide, zinc oxide, or the like, and a thin high work-function TCO of a material such as oxygen-rich ITO (indium tin oxide) or the like. The high-work function TCO is located between the low work-function TCO and the uppermost semiconductor layer of the photovoltaic device so as to provide for substantial work-function matching between the low work-function TCO and the high work-function uppermost semiconductor layer of the device in order to reduce a potential barrier for holes extracted from the device by the front contact.
摘要翻译：本发明涉及一种用于诸如光伏器件的电子设备中的前触点。在某些示例性实施例中，光伏器件的前触点包括诸如氧化锡，氧化锌等的材料的低功函数透明导电氧化物（TCO）和材料的薄的高功函数TCO 例如富氧ITO（氧化铟锡）等。高功函数TCO位于低功函数TCO和光电器件的最上半导体层之间，以便提供低功函数TCO与高功函数最上半导体层之间的基本功函数匹配以减少由前触点从设备中提取的孔的潜在屏障。

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