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51. 发明申请

US20170115571A1 PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME 审中-公开
公开(公告)号：US20170115571A1
公开(公告)日：2017-04-27
申请号：US15401385
申请日：2017-01-09
申请人： FUJIFILM Corporation
发明人： Keita KATO , Keiyu OU , Michihiro SHIRAKAWA , Akiyoshi GOTO
IPC分类号： G03F7/09 , G03F7/039 , G03F7/40 , G03F7/32 , G03F7/095 , G03F7/16 , G03F7/30 , G03F7/038 , G03F7/20
CPC分类号： G03F7/094 , G03F7/038 , G03F7/039 , G03F7/0392 , G03F7/0397 , G03F7/095 , G03F7/11 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/2041 , G03F7/3085 , G03F7/322 , G03F7/325 , G03F7/40
摘要： A pattern forming method includes (A) a step of forming a first resist film on a substrate by using a first resist composition, (B) a step of exposing the first resist film, (C) a step of forming a first pattern by developing the exposed first resist film, (D) a step of forming a planarization layer on the substrate provided with the first pattern by using composition for forming a planarization layer (a), (E) a step of forming a second resist film on the planarization layer by using a second resist composition, (F) a step of exposing the second resist film, and (G) a step of forming a second pattern by developing the exposed second resist film in this order, in which the first pattern is insoluble in the composition for forming the planarization layer (a), and a method for manufacturing an electronic device using the pattern forming method.

52. 发明申请

US20170115569A1 ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE 有权
公开(公告)号：US20170115569A1
公开(公告)日：2017-04-27
申请号：US15400491
申请日：2017-01-06
申请人： FUJIFILM Corporation
发明人： Akiyoshi GOTO , Masafumi KOJIMA , Michihiro SHIRAKAWA , Keita KATO
IPC分类号： G03F7/039 , C08F220/18 , G03F7/16 , G03F7/40 , G03F7/20 , G03F7/38 , G03F7/32 , G03F7/004 , G03F7/09
CPC分类号： G03F7/0397 , C08F212/14 , C08F220/10 , C08F220/18 , C08F220/22 , C08F220/26 , C08F220/28 , C08F220/36 , C08F2220/1858 , C08F2220/282 , C08F2220/283 , G03F7/004 , G03F7/0045 , G03F7/0392 , G03F7/091 , G03F7/16 , G03F7/168 , G03F7/2041 , G03F7/26 , G03F7/325 , G03F7/327 , G03F7/38 , G03F7/40 , H01L21/0274
摘要： Provided are an active-light-sensitive or radiation-sensitive resin composition having high DOF and excellent LWR, a pattern forming method using the composition, and a method for manufacturing an electronic device. The composition is an active-light-sensitive or radiation-sensitive resin composition containing a resin (P), in which the resin (P) includes a repeating unit (a) having a group that decomposes by the action of an acid to generate a polar group, including at least a specific repeating unit (a1) represented by General Formula (1); a repeating unit (b1) having at least one of a lactone structure, a sultone structure, or a carbonate structure; and a repeating unit (b2) having at least one of a lactone structure, a sultone structure, or a carbonate structure, which is different from the repeating unit (b1), the Ohnishi parameter of the repeating unit (b1) is larger than the Ohnishi parameter of the repeating unit (b2), and the difference between both the Ohnishi parameters is 0.85 or more.

53. 发明申请

US20170108774A1 RESIST COMPOSITION AND PATTERNING PROCESS 审中-公开
公开(公告)号：US20170108774A1
公开(公告)日：2017-04-20
申请号：US15294023
申请日：2016-10-14
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Jun Hatakeyama , Masaki Ohashi
IPC分类号： G03F7/004 , G03F7/32 , G03F7/20 , G03F7/40 , G03F7/039 , G03F7/16
CPC分类号： G03F7/0045 , C07C303/32 , C07C309/04 , C07C309/06 , C07C309/12 , C07C309/19 , C07C309/23 , C07C309/24 , C08F220/22 , C08F220/24 , C08F220/38 , C08F224/00 , C08F228/02 , C08F2220/283 , C08F2220/303 , C08F2220/382 , G03F7/0397 , G03F7/162 , G03F7/168 , G03F7/2006 , G03F7/2037 , G03F7/2041 , G03F7/322 , G03F7/325 , G03F7/38 , G03F7/40
摘要： A resist composition comprising a base polymer and a sulfonium or iodonium salt of sulfonic acid containing a cyclic hydrocarbon-substituted amino group offers dimensional stability on PPD and a satisfactory resolution.

54. 发明申请

US20170059995A1 PATTERN FORMING METHOD, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE RESIN COMPOSITION, ACTIVE LIGHT SENSITIVE OR RADIATION SENSITIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 审中-公开
标题翻译：图案形成方法，主动感光或辐射敏感性树脂组合物，主动感光或辐射敏感膜，制造电子设备的方法和电子设备
公开(公告)号：US20170059995A1
公开(公告)日：2017-03-02
申请号：US15350913
申请日：2016-11-14
申请人： FUJIFILM Corporation
发明人： Hajime FURUTANI , Akiyoshi GOTO , Michihiro SHIRAKAWA , Masahiro YOSHIDOME , Masafumi KOJIMA
IPC分类号： G03F7/32 , G03F7/16 , G03F7/039 , G03F7/004 , G03F7/20 , G03F7/038
CPC分类号： G03F7/322 , G03F7/0045 , G03F7/038 , G03F7/0397 , G03F7/16 , G03F7/2006 , G03F7/325
摘要： A pattern forming method includes a pattern forming method using an actinic ray-sensitive or radiation-sensitive resin composition in which ΔDth represented by the following Formula (1) satisfies 0.8 or more (in the formula, Dth(PTI) represents the threshold deprotection rate of the acid-decomposable group with respect to the film thickness of the actinic ray-sensitive or radiation-sensitive film after development using the alkali developer, and Dth(NTI) represents the threshold deprotection rate of the acid-decomposable group with respect to the film thickness of the actinic ray-sensitive or radiation-sensitive film after development using the developer including an organic solvent). ΔDth=Dth(PTI)/Dth(NTI) (1)
摘要翻译：使用被配置为使得由式（1）表示的ΔDth为0.8以上的活性光敏性或辐射敏感性树脂组合物的图案形成方法。 ΔDth= Dth（PTI）/ Dth（NTI）（1）（在公式中，Dth（PTI）表示酸分解基团与显影后的有源光敏感或辐射敏感膜的膜厚度的阈值去保护率碱性显影剂液体; Dth（NTI）表示使用含有有机溶剂的显影剂液体显影后的酸分解基团与活性的光敏感或感光性膜的膜厚度的阈值去保护比。）

55. 发明授权

US09581909B2 Method of trimming resist pattern 有权
标题翻译：修剪抗蚀剂图案的方法
公开(公告)号：US09581909B2
公开(公告)日：2017-02-28
申请号：US14875458
申请日：2015-10-05
申请人： TOKYO OHKA KOGYO CO., LTD.
发明人： Rikita Tsunoda , Ryoji Watanabe , Yoichi Hori
IPC分类号： G03F7/30 , G03F7/40 , G03F7/20 , G03F7/32 , H01L21/027
CPC分类号： G03F7/40 , G03F7/0397 , G03F7/20 , G03F7/30 , G03F7/325 , G03F7/405 , H01L21/0273 , H01L21/0274
摘要： A method of trimming a resist pattern, including forming a positive resist film on a substrate, the positive resist film is exposed and the positive resist film is subjected to an alkali development to form a first resist pattern having an alkali-insoluble region on the surface thereof; applying a resist trimming composition including an acid to the substrate on which the first resist pattern is formed; a heating the first resist pattern coated with the resist trimming composition, and the solubility of the first resist pattern in a developing solution is changed under action of the acid included in the resist trimming composition; and developing the first resist pattern after heating with an organic solvent to remove the alkali-insoluble region of the first resist pattern, the resist trimming composition including the acid and a solvent which does not dissolve the first resist pattern.
摘要翻译：一种修整抗蚀剂图案的方法，包括在基板上形成正性抗蚀剂膜，暴露正性抗蚀剂膜，并将正性抗蚀剂膜进行碱显影以在表面上形成具有碱不溶性区域的第一抗蚀剂图案的; 在其上形成有第一抗蚀剂图案的基板上涂布含有酸的抗蚀剂修饰组合物; 加热涂布有抗蚀剂修整组合物的第一抗蚀剂图案，并且第一抗蚀剂图案在显影液中的溶解度在抗蚀剂修剪组合物中包含的酸的作用下改变; 并且在用有机溶剂加热后显影第一抗蚀剂图案以除去第一抗蚀剂图案的碱不溶性区域，该抗蚀剂修整组合物包括不溶解第一抗蚀剂图案的酸和溶剂。

56. 发明授权

US09568821B2 Patterning process 有权
标题翻译：图案化过程
公开(公告)号：US09568821B2
公开(公告)日：2017-02-14
申请号：US14622306
申请日：2015-02-13
申请人： Shin-Etsu Chemical Co., Ltd. , Samsung Electronics Co., Ltd.
发明人： Jun Hatakeyama , Hyun-Woo Kim
IPC分类号： G03F7/20 , G03F7/004 , G03F7/095 , G03F7/32
CPC分类号： G03F7/0046 , G03F7/095 , G03F7/2002 , G03F7/325
摘要： There is provided a patterning process that forms a negative pattern by developing using an organic solvent, using a resist top coat composition that not only reduces the effect from the environment on a resist film and effectively blocks OOB light, but also reduces the film loss of a resist pattern and the bridging between patterns, enhances the sensitivity of the resist film, and suppresses the emission of an outgas from the resist film. The patterning process includes the steps of forming a resist top coat on a photoresist film formed on a substrate, with the resist top coat using as a top base material a polymer having a repeating unit p of styrene having a 1,1,1,3,3,3-hexafluoro-2-propanol group, in which m is 1 or 2, and p is 0
摘要翻译：提供通过使用有机溶剂显影形成负图案的图案化工艺，使用抗蚀剂面漆组合物，其不仅降低了抗蚀剂膜上的环境的影响并且有效地阻挡OOB光，而且还降低了膜损失抗蚀剂图案和图案之间的桥接，增强了抗蚀剂膜的灵敏度，并且抑制了从抗蚀剂膜发出的气体。图案化工艺包括以下步骤：在形成在基底上的光致抗蚀剂膜上形成抗蚀剂外涂层，其中抗蚀剂外涂层使用作为顶部基材的具有苯乙烯重复单元p的聚合物，其具有1,1,1,3 3,3-六氟-2-丙醇基，其中m为1或2，p为0

57. 发明申请

US20170031244A1 NANOPARTICLE - POLYMER RESISTS 有权
标题翻译：纳米聚合物 - 聚合物电阻
公开(公告)号：US20170031244A1
公开(公告)日：2017-02-02
申请号：US14812238
申请日：2015-07-29
申请人： The University of Queensland , Rohm and Haas Electronic Materials LLC
发明人： James W. Thackeray , Meiliana Siauw , Peter Trefonas, III , Idriss Blakey , Andrew Keith Whittaker
IPC分类号： G03F7/09 , G03F7/20 , G03F7/32 , G03F7/038
CPC分类号： G03F7/09 , G03F7/0045 , G03F7/0046 , G03F7/0047 , G03F7/038 , G03F7/0382 , G03F7/0392 , G03F7/0397 , G03F7/094 , G03F7/162 , G03F7/20 , G03F7/2037 , G03F7/325
摘要： A composite, which is a blend comprising: a nanoparticle comprising a core and a coating surrounding the core; and a polymer, wherein the coating of the nanoparticle comprises a ligand, wherein the ligand is a substituted or unsubstituted C1-C16 carboxylic acid or a salt thereof, a substituted or unsubstituted C1-C16 amino acid or a salt thereof, a substituted or unsubstituted C1-C16 dialkyl phosphonate, or a combination thereof; and wherein the polymer is a polymerization product of a photoacid generator comprising a polymerizable group; at least one unsaturated monomer, which is different from the photoacid generator comprising a polymerizable group; and a chain transfer agent of formula (I); wherein: Z is a y valent C1-20 organic group, x is 0 or 1, and Rd is a substituted or unsubstituted C1-20 alkyl, C3-20 cycloalkyl, C6-20 aryl, or C7-20 aralkyl.

58. 发明授权

US09551933B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, using the same, pattern forming method, manufacturing method of electronic device, and electronic device 有权
标题翻译：光敏感或辐射敏感性树脂组合物，抗蚀剂膜，使用它们，图案形成方法，电子器件的制造方法和电子器件
公开(公告)号：US09551933B2
公开(公告)日：2017-01-24
申请号：US14605631
申请日：2015-01-26
申请人： FUJIFILM Corporation
发明人： Hiroo Takizawa , Shuji Hirano , Natsumi Yokokawa , Wataru Nihashi
IPC分类号： G03F7/039 , G03F7/32 , C08F12/22 , C08F12/24 , G03F7/038 , C08F212/14 , C08F220/28 , G03F7/20 , G03F7/30 , C08F12/20 , C08F12/30 , C08F12/32 , C09D125/18 , G03F7/11
CPC分类号： G03F7/0388 , C08F12/20 , C08F12/22 , C08F12/24 , C08F12/30 , C08F12/32 , C08F212/14 , C08F220/28 , C08F2220/281 , C09D125/18 , G03F7/0392 , G03F7/0397 , G03F7/11 , G03F7/2002 , G03F7/2037 , G03F7/2041 , G03F7/30 , G03F7/325
摘要： There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin containing a repeating unit represented by the first specific formula and a repeating unit represented by the second specific formula, wherein the content of the repeating unit represented by the first specific formula is 35 mol % or more based on all repeating units in the resin (A), a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition.
摘要翻译：提供一种光化射线敏感或辐射敏感性树脂组合物，其包含：（A）含有由第一特定式表示的重复单元的树脂和由第二具体式表示的重复单元，其中所述重复单元的含量通过第一具体式为基于树脂（A）中的所有重复单元的35摩尔％以上，使用光化射线敏感性或辐射敏感性树脂组合物形成的抗蚀剂膜。

59. 发明授权

US09551931B2 Method of forming pattern, actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, process for manufacturing electronic device and electronic device 有权
标题翻译：形成图案，光化射线或辐射敏感树脂组合物，光化射线或辐射敏感膜的方法，用于制造电子器件和电子器件的方法
公开(公告)号：US09551931B2
公开(公告)日：2017-01-24
申请号：US14853574
申请日：2015-09-14
申请人： FUJIFILM CORPORATION
发明人： Junichi Ito , Akinori Shibuya , Akiyoshi Goto , Michihiro Shirakawa , Kei Yamamoto , Fumihiro Yoshino
IPC分类号： G03F7/004 , G03F7/038 , C08F220/36 , H01L21/027 , C08F220/18 , C07C381/12 , C08F220/30 , G03F7/20 , C08F220/14 , C08F220/28 , C08F220/26 , C08F232/08 , G03F7/32 , G03F7/039
CPC分类号： G03F7/038 , C07C381/12 , C08F220/14 , C08F220/18 , C08F220/26 , C08F220/28 , C08F220/30 , C08F220/36 , C08F232/08 , G03F7/0045 , G03F7/0397 , G03F7/20 , G03F7/2041 , G03F7/325 , H01L21/0274
摘要： A method of forming a pattern includes (a) forming a film of an actinic-ray- or radiation-sensitive resin composition, (b) exposing the film to light, and (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern. The actinic-ray- or radiation-sensitive resin composition includes (A) a resin whose solubility in the developer comprising an organic solvent is lowered when acted on by an acid, which resin contains a repeating unit with any of lactone structures of general formula (1) below, and (B) a compound that when exposed to actinic rays or radiation, generates an acid.
摘要翻译：形成图案的方法包括（a）形成光化射线或辐射敏感性树脂组合物的膜，（b）将膜曝光，和（c）用包含有机溶剂的显影剂显影曝光的膜从而形成负模式。光化射线或辐射敏感性树脂组合物包括（A）当在含有有机溶剂的显影剂中的溶解度降低的树脂（A）作用于酸时，树脂含有具有通式（III）的内酯结构的重复单元 1）和（B）当暴露于光化射线或辐射时产生酸的化合物。

60. 发明申请

US20170012210A1 ACTIVE LAYER AND METHOD FOR PREPARING THE SAME, ORGANIC FIELD-EFFECT TRANSISTOR AND ARRAY SUBSTRATE 有权
标题翻译：活性层及其制备方法，有机场效应晶体管和阵列基板
公开(公告)号：US20170012210A1
公开(公告)日：2017-01-12
申请号：US15070892
申请日：2016-03-15
申请人： BOE TECHNOLOGY GROUP CO., LTD. , BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.
发明人： Hongpeng LI
IPC分类号： H01L51/00 , G03F7/40 , G03F7/32 , G03F7/16 , G03F7/20
CPC分类号： H01L51/0055 , G03F7/11 , G03F7/168 , G03F7/20 , G03F7/32 , G03F7/325 , G03F7/40 , H01L51/0003 , H01L51/0018 , H01L51/0026 , H01L51/004 , H01L51/0558
摘要： The present invention discloses an active layer and a method for preparing the same, an organic field-effect transistor and an array substrate. In the method for preparing an active layer according to the invention, the active layer is pentacene layer, wherein the pentacene layer is prepared by a compound of the following Formula I as a precursor of pentacene. The active layer of the invention is prepared by the preparation method of the invention; the organic field-effect transistor of the invention includes the active layer of the invention; and the array substrate of the invention includes the organic field-effect transistor according to the invention.
摘要翻译：本发明公开了一种有源层及其制造方法，有机场效应晶体管和阵列基板。活性层是并五苯层，其中并五苯层由说明书中描述的式I表示的化合物制备。活性层根据制造方法制备。有机场效应晶体管包括有源层。阵列基板包括有机场效应晶体管。根据活性层的制造方法，可以避免使用式I表示的化合物作为前体，以便于采用光刻法制造活性层，可以避免利用现有技术中的湿法技术引起的咖啡环，改善了有机场效应晶体管的光学效果，解决了并五苯层的流动性问题，提高了并五苯层的精度。

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