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51. 发明授权

US4054708A Film of pyrolytic graphite having bi-directional reinforcing properties 失效
标题翻译：具有双向增强性能的热解石墨膜
公开(公告)号：US4054708A
公开(公告)日：1977-10-18
申请号：US579667
申请日：1975-05-21
申请人： William A. Robba , Robert W. Froberg
发明人： William A. Robba , Robert W. Froberg
IPC分类号： C01B21/064 , C01B31/30 , C01B31/36 , C01B33/02 , C01B35/02 , C04B35/52 , C04B35/583 , C04B35/584 , C23C16/01 , C01B31/04 , B29J1/00 , C03B18/02
CPC分类号： C23C16/01 , C01B21/064 , C01B31/30 , C01B31/36 , C01B33/02 , C01B35/023 , C04B35/522 , C04B35/583 , C04B35/584 , C01P2004/51 , C01P2004/61 , C01P2004/80 , C01P2006/80
摘要： A thin film of substantially defect-free pyrolytic graphite, useful as a bi-directional reinforcing material, is formed by vapor deposition on an inert liquid substrate surface and separated therefrom. The substrate temperature is substantially below the melting point of the refractory material and the substrate surface is smooth and free of stress to enable formation of a substantially defect-free film. Thin films of other refractory materials can be made similarly by first forming a pyrolytic graphite film on the substrate, and then vapor depositing a film of refractory material on the pyrolytic graphite surface. The pyrolytic graphite and refractory material films are then separated from the substrate surface and then separated from each other. Various refractory film materials can be made including pyrolytic grahite; boron; silicon; and refractory carbides, borides and nitrides. For making pyrolytic graphite films, it is preferable to use tin as the ubstrate, at a temperature of about 1600-1800.degree. C., at atmospheric pressure, a source gas consisting of methane and argon, helium, or hydrogen, and a film residence time on the substrate surface of about 0.16-2 minutes.
摘要翻译：通过气相沉积在惰性液体基材表面上并与其分离，形成可用作双向增强材料的基本无缺陷的热解石墨薄膜。衬底温度基本上低于耐火材料的熔点，并且衬底表面光滑并且没有应力以形成基本上无缺陷的膜。可以类似地制备其它耐火材料的薄膜，首先在基材上形成热解石墨膜，然后在热解石墨表面上气相沉积耐火材料薄膜。然后将热解石墨和耐火材料膜与基材表面分离，然后彼此分离。可以制备各种耐火薄膜材料，包括热解青蒿素; 硼; 硅; 耐火碳化物，硼化物和氮化物。为了制造热解石墨膜，优选在大气压下在约1600-1800℃的温度下使用锡作为底物，由甲烷和氩气，氦或氢组成的源气体和膜住宅时间在衬底表面上约0.16-2分钟。

52. 发明授权

US4045186A Method for producing large soft hexagonal boron nitride particles 失效
标题翻译：生产大型软六角形氮化硼颗粒的方法
公开(公告)号：US4045186A
公开(公告)日：1977-08-30
申请号：US747845
申请日：1976-12-06
申请人： Francis R. Corrigan
发明人： Francis R. Corrigan
IPC分类号： C01B21/064 , C30B9/00 , B01D9/02 , B01J17/04 , C01B35/00 , C01B21/06
CPC分类号： C01B21/064 , C30B29/38 , C30B9/00
摘要： Soft hexagonal boron nitride crystals of 200-600 microns platelet size are produced from crystals of less than fifty microns particle size by mixing the small crystals with Li.sub.3 N, simultaneously heating and pressurizing said mixture to a temperature and pressure in a restricted region of the graphitic (hexagonal) boron nitride (GBN) stable region of the pressure-temperature (P-T) phase diagram of boron nitride, cooling and depressurizing said mixture, and separating off the water soluble material present in the mixture to leave a residue of large crystals of boron nitride.
摘要翻译：通过将小晶体与Li 3 N混合，同时将所述混合物加热并加压到石墨的限制区域的温度和压力下，从小于50微米粒度的晶体产生200-600微米的小片尺寸的柔性六方晶系氮化硼晶体（六方晶系）氮化硼（GBN）氮化硼的压力 - 温度（PT）相图的稳定区域，对所述混合物进行冷却和减压，并分离存在于混合物中的水溶性材料，留下大量氮化硼晶体的残留物。

53. 发明授权

US4016244A Process for production of cubic boron nitride 失效
标题翻译：立方氮化硼生产工艺
公开(公告)号：US4016244A
公开(公告)日：1977-04-05
申请号：US543430
申请日：1975-01-23
申请人： Kenzo Susa , Toshio Kobayashi , Satoshi Taniguchi , Mitsuru Ishii
发明人： Kenzo Susa , Toshio Kobayashi , Satoshi Taniguchi , Mitsuru Ishii
IPC分类号： C01B21/064 , C04B35/5831 , C01B35/14
CPC分类号： C01B21/064 , C04B35/5831 , C01P2004/61
摘要： In synthesizing cubic boron nitride from hexagonal boron nitride under high temperature and high pressure conditions, if water is incorporated into the raw material in an amount of at least 3% by weight, cubic boron nitride of a higher purity in the form of smaller crystallites than in conventional products can be obtained under lower temperature and lower pressure conditions than in conventional methods. When graphitic hexagonal boron nitride is used as the raw material, the temperature and pressure necessary for synthesis can be reduced to about 600.degree. C. and 50 Kbar, respectively.
摘要翻译：在高温和高压条件下从六方氮化硼合成立方氮化硼时，如果将水以至少3％（重量）的量掺入原料中，则较小晶粒形式的纯度更高的立方氮化硼比在常规方法中可以在较低温度和较低压力条件下获得常规产品。当使用石墨六方氮化硼作为原料时，合成所需的温度和压力可分别降低至约600℃和50千巴。

54. 发明授权

US3979500A Preparation of finely-divided refractory powders of groups III-V metal borides, carbides, nitrides, silicides and sulfides 失效
$Preparation of finely-divided refractory powders of groups III-V metal borides, carbides, nitrides, silicides and sulfides$
标题翻译：制备III-V族金属硼化物，碳化物，氮化物，硅化物和硫化物的细碎耐火粉末
公开(公告)号：US3979500A
公开(公告)日：1976-09-07
申请号：US576835
申请日：1975-05-12
申请人： Robert S. Sheppard , Franklin E. Groening
发明人： Robert S. Sheppard , Franklin E. Groening
IPC分类号： C01B21/06 , C01B21/064 , C01B21/068 , C01B21/076 , C01B31/30 , C01B33/00 , C01B33/06 , C01B35/04
CPC分类号： C01B35/04 , C01B21/06 , C01B21/064 , C01B21/068 , C01B21/0763 , C01B31/30 , C01B33/00 , C01B33/06 , C01B21/0617 , C01B21/062
摘要： The preparation of metal and metalloid carbides, borides, nitrides silicides and sulfides by reaction in the vapor phase of the corresponding vaporous metal halide, e.g., metal chloride, with a source of carbon, boron, nitrogen, silicon or sulfur respectively in a reactor is described. Reactants can be introduced into the reactor through a reactant inlet nozzle assembly. Inhibition and often substantial elimination of product growth on exposed surfaces of such assembly is accomplished by introducing the corresponding substantially anhydrous hydrogen halide, e.g., hydrogen chloride, into the principal reactant mixing zone.
摘要翻译：通过在反应器中分别在相应的气态金属卤化物（例如金属氯化物）与碳源，碳源，氮源，硅或硫源的气相反应制备金属和准金属碳化物，硼化物，氮化物硅化物和硫化物，描述。可以通过反应物入口喷嘴组件将反应物引入反应器。通过将相应的基本上无水的氢卤化物（例如氯化氢）引入主反应物混合区来实现对这种组装的暴露表面的产物生长的抑制和经常显着消除。

55. 发明授权

US3944398A Method of forming an abrasive compact of cubic boron nitride 失效
标题翻译：形成立方氮化硼磨料的方法
公开(公告)号：US3944398A
公开(公告)日：1976-03-16
申请号：US496957
申请日：1974-08-13
申请人： Frank Rutherford Bell
发明人： Frank Rutherford Bell
IPC分类号： B24D3/04 , C01B21/064 , C04B14/32
CPC分类号： C01B21/064 , B24D3/04 , C04B14/32
摘要： An abrasive compact comprising diamond or cubic boron nitride or mixtures thereof held in a matrix of a refractory substance and a substance which dissolves the abrasive particle to at least a limited extent. The compact may be made by subjecting a powdered mixture of the ingredients to conditions of temperature and pressure at which the abrasive particle is crystallographically stable and the solvent substance acts to dissolve the abrasive particle. The refractory substance and solvent substance are preferably so chosen that during compact manufacture there is interaction resulting in the formation of a hard material.
摘要翻译：一种包含金刚石或立方氮化硼或其混合物的研磨成型体或其混合物，其保持在耐火物质的基质中，并将物质溶解至少有限的程度。压块可以通过使成分的粉末混合物经受磨料颗粒在晶体学上稳定的温度和压力的条件，并且溶剂物质用于溶解磨料颗粒。难熔物质和溶剂物质优选如此选择，使得在紧凑的制造过程中存在形成硬质材料的相互作用。

56. 发明授权

US3620780A Boron nitride fiber manufacture 失效
公开(公告)号：US3620780A
公开(公告)日：1971-11-16
申请号：US3620780D
申请日：1968-11-18
申请人： CARBORUNDUM CO
发明人： ECONOMY JAMES , ANDERSON RAYMOND V
IPC分类号： C01B21/064 , C04B35/622 , C04B35/58 , C04B35/14
CPC分类号： C01B21/064 , C01P2004/03 , C01P2004/10 , C01P2004/61 , C01P2006/10 , C04B35/62227 , C04B35/62231
摘要： Fibers incorporating a boron and nitrogen containing composition are produced by reacting, with a nitrogen and hydrogen containing composition, fibers having a maximum diameter of about 20-30 microns and incorporating substantially throughout their thickness a boron and oxygen containing composition. Preferably, boric oxide fibers having a maximum diameter of about 10 microns are heated in an ammonia atmosphere according to a suitable temperature program to produce fibers consisting essentially of a boron nitride composition. Fibers may also be produced consisting of boron nitride and other constituents such as silica. Fibers produced according to the invention are useful for a wide variety of purposes including thermal and electrical insulation, fabrication of textiles and reinforcement of plastics, ceramics and metals.

57. 发明授权

US3192015A Growth of large cubic form of boron nitride crystals 失效
标题翻译：大型立方晶氮化硼晶体的生长
公开(公告)号：US3192015A
公开(公告)日：1965-06-29
申请号：US26941063
申请日：1963-04-01
申请人： GEN ELECTRIC
发明人： WENTORF JR ROBERT H
IPC分类号： C01B21/064 , C04B35/5831 , C30B1/12
CPC分类号： C30B1/12 , C01B21/064 , C04B35/5831

58. 发明授权

US3128153A Preparation of the nitrides of aluminum and gallium 失效
标题翻译：制备铝和镓的氮化物
公开(公告)号：US3128153A
公开(公告)日：1964-04-07
申请号：US10648261
申请日：1961-05-01
申请人： GEN ELECTRIC
发明人： ARRIGO ADDAMIANO
IPC分类号： C01B21/06 , C01B21/064 , C01B21/072
CPC分类号： C01B21/072 , C01B21/0632 , C01B21/064

59. 发明授权

US3058809A Methods for making boron nitride materials 失效
标题翻译：制造氮化硼材料的方法
公开(公告)号：US3058809A
公开(公告)日：1962-10-16
申请号：US70075057
申请日：1957-12-05
申请人： CARBORUNDUM CO
发明人： TAYLOR KENNETH M
IPC分类号： C01B21/064 , C04B35/583
CPC分类号： C01B21/064 , C01B21/0648 , C04B35/583

60. 发明授权

US2992984A Gas discharge device for producing extremely pure crystalline semiconductor substances 失效
标题翻译：用于生产极纯晶体半导体物质的气体放电装置
公开(公告)号：US2992984A
公开(公告)日：1961-07-18
申请号：US50998055
申请日：1955-05-20
申请人： SIEMENS AG
发明人： THEODOR RUMMEL
IPC分类号： B01J19/08 , C01B19/00 , C01B21/064 , C01B21/072 , C01B25/06 , C01B33/02 , C01B35/04 , C22B5/16 , C22B41/00 , C22C1/00 , C23C16/00 , C30B11/12 , C30B15/02 , H01J37/32 , H01L21/00
CPC分类号： C01B33/02 , B01J19/088 , C01B19/007 , C01B21/064 , C01B21/072 , C01B25/06 , C01B35/04 , C22B5/16 , C22B41/00 , C22C1/007 , C23C16/003 , C30B11/12 , C30B15/02 , H01J37/32018 , H01L21/00 , Y10S117/901 , Y10S117/917

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