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51. 发明授权

US08325448B2 Pinning field in MR devices despite higher annealing temperature 有权
公开(公告)号：US08325448B2
公开(公告)日：2012-12-04
申请号：US12931849
申请日：2011-02-11
申请人： Kunliang Zhang , Shengyuan Wang , Tong Zhao , Min Li , Hui-Chuan Wang
发明人： Kunliang Zhang , Shengyuan Wang , Tong Zhao , Min Li , Hui-Chuan Wang
IPC分类号： G11B5/127
CPC分类号： H01L43/12 , B82Y40/00 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L29/82 , H01L43/08
摘要： The pinning field in an MR device was significantly improved by using the Ru 4A peak together with steps to minimize interfacial roughness of the ruthenium layer as well as boron and manganese diffusion into the ruthenium layer during manufacturing. This made it possible to anneal at temperatures as high as 340° C. whereby a high MR ratio could be simultaneously achieved.

52. 发明授权

US08289663B2 Ultra low RA (resistance x area) sensors having a multilayer non-magnetic spacer between pinned and free layers 有权
标题翻译：超低RA（电阻x面积）传感器在被钉扎层和自由层之间具有多层非磁性间隔物
公开(公告)号：US08289663B2
公开(公告)日：2012-10-16
申请号：US12150191
申请日：2008-04-25
申请人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
发明人： Kunliang Zhang , Tong Zhao , Hui-Chuan Wang , Min Li
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B2005/3996 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L43/08 , Y10T428/1114
摘要： A high performance TMR sensor with a spacer including at least one metal layer such as Cu and one or more MgO layers is disclosed. In addition, there may be a metal dopant in the MgO layer. In an alternative embodiment, the MgO layer may be replaced by other low band gap insulating or semiconductor materials. An ultra-low RA of
摘要翻译：公开了具有包括至少一个金属层如Cu和一个或多个MgO层的间隔物的高性能TMR传感器。此外，MgO层中可能存在金属掺杂剂。在替代实施例中，MgO层可以由其他低带隙绝缘或半导体材料代替。通过本发明的复合间隔物实现了<0.4μohm-cm 2的超低RA与14％的MR，低磁致伸缩和低Hin值约20Oe的组合。 Cu层的厚度为0.1〜10埃，MgO / Cu / MgO / Cu，MgO / Cu / MgO等间隔构造的MgO的厚度为5〜20埃。

53. 发明申请

US20120235258A1 TMR Device with Improved MgO Barrier 审中-公开
标题翻译：具有改善MgO阻挡层的TMR器件
公开(公告)号：US20120235258A1
公开(公告)日：2012-09-20
申请号：US13482017
申请日：2012-05-29
申请人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
发明人： Tong Zhao , Hui-Chuan Wang , Min Li , Kunliang Zhang
IPC分类号： H01L29/82
CPC分类号： H01F41/307 , B82Y40/00 , G11C11/161 , H01L43/12
摘要： A method of forming a high performance magnetic tunnel junction (MTJ) is disclosed wherein the tunnel barrier includes at least three metal oxide layers. The tunnel barrier stack is partially built by depositing a first metal layer, performing a natural oxidation (NOX) process, depositing a second metal layer, and performing a second NOX process to give a MOX1/MOX2 configuration. An uppermost metal layer on the MOX2 layer is not oxidized until after the MTJ stack is completely formed and an annealing process is performed to drive unreacted oxygen in the MOX1 and MOX2 layers into the uppermost metal layer. In an alternative embodiment, a plurality of metal oxide layers is formed on the MOX1 layer before the uppermost metal layer is deposited. The resulting MTJ stack has an ultralow RA around 1 ohm-μm2 and maintains a high magnetoresistive ratio characteristic of a single metal oxide tunnel barrier layer.
摘要翻译：公开了一种形成高性能磁隧道结（MTJ）的方法，其中隧道势垒包括至少三个金属氧化物层。通过沉积第一金属层，执行自然氧化（NOX）工艺，沉积第二金属层以及执行第二NOX工艺以产生MOX1 / MOX2配置来部分构建隧道势垒堆叠。在MOX2层上的最上层的金属层直到MTJ堆叠完全形成之后才被氧化，并且进行退火处理以将MOX1和MOX2层中的未反应的氧气驱入最上层的金属层。在替代实施例中，在最上层金属层被沉积之前，在MOX1层上形成多个金属氧化物层。所得到的MTJ堆叠具有约1欧姆 - μm2的超低RA，并且保持单个金属氧化物隧道势垒层的高磁阻比特性。

54. 发明申请

US20120205757A1 Pinning field in MR devices despite higher annealing temperature 有权
标题翻译：尽管退火温度较高，MR装置中的固定场也是如此
公开(公告)号：US20120205757A1
公开(公告)日：2012-08-16
申请号：US12931849
申请日：2011-02-11
申请人： Kunliang Zhang , Shengyuan Wang , Tong Zhao , Min Li , Hui-Chuan Wang
发明人： Kunliang Zhang , Shengyuan Wang , Tong Zhao , Min Li , Hui-Chuan Wang
IPC分类号： H01L29/82 , H01L43/12
CPC分类号： H01L43/12 , B82Y40/00 , H01F10/3259 , H01F10/3272 , H01F41/307 , H01L29/82 , H01L43/08
摘要： The pinning field in an MR device was significantly improved by using the Ru 4A peak together with steps to minimize interfacial roughness of the ruthenium layer as well as boron and manganese diffusion into the ruthenium layer during manufacturing. This made it possible to anneal at temperatures as high as 340° C. whereby a high MR ratio could be simultaneously achieved.
摘要翻译：通过使用Ru 4A峰和步骤，在制造期间使钌层的界面粗糙度以及硼和锰扩散到钌层中，使MR器件中的钉扎场显着改善。这使得可以在高达340℃的温度下退火，由此可以同时实现高MR比。

55. 发明授权

US07780820B2 Low resistance tunneling magnetoresistive sensor with natural oxidized double MgO barrier 有权
公开(公告)号：US07780820B2
公开(公告)日：2010-08-24
申请号：US11280523
申请日：2005-11-16
申请人： Tong Zhao , Kunliang Zhang , Hui-Chuan Wang , Yu-Hsia Chen , Min Li
发明人： Tong Zhao , Kunliang Zhang , Hui-Chuan Wang , Yu-Hsia Chen , Min Li
IPC分类号： C23C14/34
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3272 , H01F41/307 , Y10T428/1114 , Y10T428/1143
摘要： A high performance TMR sensor is fabricated by incorporating a tunnel barrier having a Mg/MgO/Mg configuration. The 4 to 14 Angstroms thick lower Mg layer and 2 to 8 Angstroms thick upper Mg layer are deposited by a DC sputtering method while the MgO layer is formed by a NOX process involving oxygen pressure from 0.1 mTorr to 1 Torr for 15 to 300 seconds. NOX time and pressure may be varied to achieve a MR ratio of at least 34% and a RA value of 2.1 ohm-um2. The NOX process provides a more uniform MgO layer than sputtering methods. The second Mg layer is employed to prevent oxidation of an adjacent ferromagnetic layer. In a bottom spin valve configuration, a Ta/Ru seed layer, IrMn AFM layer, CoFe/Ru/CoFeB pinned layer, Mg/MgO/Mg barrier, CoFe/NiFe free layer, and a cap layer are sequentially formed on a bottom shield in a read head.

56. 发明申请

US20090194833A1 TMR device with Hf based seed layer 有权
标题翻译：具有Hf基种子层的TMR器件
公开(公告)号：US20090194833A1
公开(公告)日：2009-08-06
申请号：US12319734
申请日：2009-01-12
申请人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
发明人： Hui-Chuan Wang , Kunliang Zhang , Tong Zhao , Min Li
IPC分类号： H01L29/82
CPC分类号： H01F10/30 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/3254 , H01F10/3259 , H01F10/3295 , H01F41/302 , H01L43/10 , Y10T428/1291
摘要： A MTJ structure is disclosed in which the seed layer is made of a lower Ta layer, a middle Hf layer, and an upper NiFe or NiFeX layer where X is Co, Cr, or Cu. Optionally, Zr, Cr, HfZr, or HfCr may be employed as the middle layer and materials having FCC structures such as CoFe and Cu may be used as the upper layer. As a result, the overlying layers in a TMR sensor will be smoother and less pin dispersion is observed. The Hex/Hc ratio is increased relative to that for a MTJ having a conventional Ta/Ru seed layer configuration. The trilayer seed configuration is especially effective when an IrMn AFM layer is grown thereon and thereby reduces Hin between the overlying pinned layer and free layer. Ni content in the NiFe or NiFeX middle layer is above 30 atomic % and preferably >80 atomic %.
摘要翻译：公开了一种MTJ结构，其中种子层由下Ta层，中Hf层和上NiFe或NiFeX层制成，其中X是Co，Cr或Cu。可选地，可以使用Zr，Cr，HfZr或HfCr作为中间层，并且可以使用具有FCC结构的诸如CoFe和Cu的材料作为上层。结果，TMR传感器中的上覆层将变得更平滑，并且观察到较少的引脚分散。相对于具有常规Ta / Ru种子层构型的MTJ，Hex / Hc比增加。当IrMn AFM层在其上生长时，三层种子构型特别有效，从而在覆盖的被钉扎层和自由层之间降低了Hin。 NiFe或NiFeX中间层的Ni含量在30原子％以上，优选为80原子％以上。

57. 发明授权

US07528457B2 Method to form a nonmagnetic cap for the NiFe(free) MTJ stack to enhance dR/R 有权
标题翻译：形成用于NiFe（自由）MTJ堆叠以增强dR / R的非磁性帽的方法
公开(公告)号：US07528457B2
公开(公告)日：2009-05-05
申请号：US11404446
申请日：2006-04-14
申请人： Cheng T. Horng , Hui-Chuan Wang , Min Li , Ru-Ying Tong , Tong Zhao , Yimin Guo
发明人： Cheng T. Horng , Hui-Chuan Wang , Min Li , Ru-Ying Tong , Tong Zhao , Yimin Guo
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/10 , H01L43/08 , H01L43/12
摘要： An MTJ in an MRAM array or TMR read head is disclosed in which a capping layer has a bilayer configuration with a non-magnetic NiFeX inner layer on a NiFe free layer and a Ta layer on the NiFeX layer to improve dR/R and minimize magnetostriction. Optionally, a trilayer configuration may be employed where the Ta layer is sandwiched between an inner NiFeX layer and an outer Ru layer. The X component in NiFeX is preferably an element having an oxidation potential greater than Ni or Fe such as Mg, Hf, Zr, Nb, or Ta. NiFeX is preferably formed by co-sputtering a NiFe target with an X target at a forward power of about 200 W and 50 W, respectively. In an MRAM structure, the Mg content in NiFeMg may be increased to >50 atomic % to improve the gettering power of removing oxygen from the free layer.
摘要翻译：公开了一种MRAM阵列或TMR读取头中的MTJ，其中封盖层具有在NiFe自由层上的非磁性NiFeX内层和NiFeX层上的Ta层的双层结构，以改善dR / R并最小化磁致伸缩。任选地，可以采用三层结构，其中Ta层夹在内部NiFeX层和外部Ru层之间。 NiFeX中的X成分优选为具有大于Ni，Fe的氧化电位的元素，例如Mg，Hf，Zr，Nb或Ta。优选通过以约200W和50W的正向功率共同溅射具有X靶的NiFe靶来形成NiFeX。在MRAM结构中，NiFeMg中的Mg含量可以增加到> 50原子％以提高从自由层除去氧的吸气能力。

58. 发明申请

US20080246103A1 MR device with surfactant layer within the free layer 审中-公开
标题翻译： MR装置在自由层内具有表面活性剂层
公开(公告)号：US20080246103A1
公开(公告)日：2008-10-09
申请号：US11784076
申请日：2007-04-05
申请人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
发明人： Hui-Chuan Wang , Tong Zhao , Min Li , Kunliang Zhang
IPC分类号： H01L43/00
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , H01F10/325 , H01F10/3254 , H01F41/303 , H01L43/12
摘要： The dR/R ratios of TMR and GMR devices, having a FeCo/NiFe type of free layer, have been significantly increased by inserting a suitable surfactant layer within (as opposed to above or below) the free layer. Our preferred surfactant material has been oxygen but similar-acting materials could be substituted. The concept can be applied to GMR CPP, CIP, and CCP sensor designs.
摘要翻译：具有FeCo / NiFe类型的自由层的TMR和GMR器件的dR / R比已经通过在自由层（相对于上方或下方）插入合适的表面活性剂层而显着增加。我们优选的表面活性剂材料是氧气，但可以代替类似作用的材料。该概念可以应用于GMR CPP，CIP和CCP传感器设计。

59. 发明申请

US20080219042A1 Magnetic memory cell 有权
标题翻译：磁记忆体
公开(公告)号：US20080219042A1
公开(公告)日：2008-09-11
申请号：US11715097
申请日：2007-03-07
申请人： Hui-Chuan Wang , Tong Zhao , Kunliang Zhang , Min Li
发明人： Hui-Chuan Wang , Tong Zhao , Kunliang Zhang , Min Li
IPC分类号： G11C11/16
CPC分类号： G11C11/15
摘要： By inserting a spin polarizing layer (typically pure iron) within the free layer of a MTJ or GMR memory cell, dR/R can be improved without significantly affecting other free layer properties such as Hc. Additional performance improvements can be achieved by also inserting a surfactant layer (typically oxygen) within the free layer.
摘要翻译：通过在MTJ或GMR存储器单元的自由层内插入自旋偏振层（通常为纯铁），可以改善dR / R，而不显着影响其它自由层性质如Hc。还可以通过在自由层内插入表面活性剂层（通常为氧）来实现另外的性能改进。

60. 发明授权

US09021685B2 Two step annealing process for TMR device with amorphous free layer 有权
公开(公告)号：US09021685B2
公开(公告)日：2015-05-05
申请号：US12075605
申请日：2008-03-12
申请人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
发明人： Tong Zhao , Hui-Chuan Wang , Kunliang Zhang , Min Li
IPC分类号： G11B5/127 , G11B5/39 , B82Y10/00 , B82Y25/00 , G01R33/09 , G11B5/31 , G11C11/16 , H01L43/12
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11C11/16 , G11C11/161 , H01L43/12 , Y10T29/49034
摘要： An annealing process for a TMR or GMR sensor having an amorphous free layer is disclosed and employs at least two annealing steps. A first anneal at a temperature T1 of 200° C. to 270° C. and for a t1 of 0.5 to 15 hours is employed to develop the pinning in the AFM and pinned layers. A second anneal at a temperature T2 of 260° C. to 400° C. where T2>T1 and t1>t2 is used to crystallize the amorphous free layer and complete the pinning. An applied magnetic field of about 8000 Oe is used during both anneal steps. The mechanism for forming a sensor with high MR and robust pinning may involve structural change in the tunnel barrier or at an interface between two of the layers in the spin valve stack. A MgO tunnel barrier and a CoFe/CoB free layer are preferred.

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