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    • 51. 发明授权
    • Semiconductor memory device and system with redundant element
    • 具有冗余元件的半导体存储器件和系统
    • US07933159B2
    • 2011-04-26
    • US12683029
    • 2010-01-06
    • Hiroyuki KobayashiDaisuke Kitayama
    • Hiroyuki KobayashiDaisuke Kitayama
    • G11C29/00
    • G11C29/848G11C29/24
    • A semiconductor memory device includes a memory cell array, a redundant element, an address specifying circuit configured to select one of a plurality of addresses as a redundancy address in response to a switchover signal, a decoder circuit configured to select the redundant element in response to an externally applied address that matches the redundancy address selected by the address specifying circuit, and a test mode setting circuit configured to change the switchover signal in response to an externally applied input, thereby to cause the redundancy address assigned to the redundant element to be switched between different ones of the plurality of addresses.
    • 半导体存储器件包括存储单元阵列,冗余元件,地址指定电路,被配置为响应于切换信号选择多个地址之一作为冗余地址;解码器电路,被配置为响应于所述冗余元件选择所述冗余元件 匹配由地址指定电路选择的冗余地址的外部施加的地址和被配置为响应于外部施加的输入而改变切换信号的测试模式设置电路,从而使分配给冗余元件的冗余地址被切换 在多个地址中的不同地址之间。
    • 58. 发明授权
    • Method for manufacturing diaphragm for use in electroacoustic transducer
    • 制造用于电声换能器的隔膜的方法
    • US07704428B2
    • 2010-04-27
    • US11114222
    • 2005-04-26
    • Koji TakayamaMasatoshi SatoShinichi HayasakaHiroyuki Kobayashi
    • Koji TakayamaMasatoshi SatoShinichi HayasakaHiroyuki Kobayashi
    • B29C45/14
    • H04R31/003B29C45/14065B29C45/1418B29C45/14467B29C2045/14147B29C2045/14532B29K2995/0001
    • A method for manufacturing a diaphragm for use in an electroacoustic transducer in a multi-layer structure which includes a first diaphragm layer of synthetic resin molded in a predetermined shape by injection molding and a second diaphragm layer layered in intimate contact on the first diaphragm layer and made of substance different from the first diaphragm layer, includes executing successively a pre-molding step and an injection-molding step, thereby providing the multi-layer structure. The pre-molding step includes attaching a non-molded sheet-like material which is a raw material of the second diaphragm layer to a mating surface of one of the die part of an injection molding die, and closing thereafter the injection molding die to give the sheet-like material a predetermined diaphragm shape. The injection molding step includes injecting synthetic resin material constituting the first diaphragm layer into the injection molding die thus closed thereby to form the first diaphragm layer.
    • 一种制造用于多层结构的电声换能器的隔膜的方法,该隔膜包括通过注塑成型为预定形状的合成树脂的第一隔膜层和在第一隔膜层上紧密接触而形成的第二隔膜层,以及 由与第一隔膜层不同的物质制成,包括连续执行预成型步骤和注射成型步骤,由此提供多层结构。 预成型步骤包括将作为第二隔膜层的原料的非成型片状材料附着到注射成型模具的模具部分的配合面,然后关闭注射成型模具,得到 片状材料具有预定的膜片形状。 注射成型步骤包括将构成第一隔膜层的合成树脂材料注入到如此封闭的注塑模具中,从而形成第一隔膜层。